Abstract: An energy generating device includes first material portions comprising a first material, wherein the first material is a piezoelectric material; second material portions comprising a second material, wherein the second material has a larger coefficient of thermal expansion than the first material; lower electrodes; and upper electrodes, wherein second material portions are spaced apart from one another, the first material portions are disposed in a space between the second material portions and in contact with the second material portion, and each of the lower electrodes and upper electrodes are disposed below and above, respectively, each of the first material portions.

Abstract: A method of and an electronic device for performing a power-saving mode in the electronic device, according is provided. The method includes driving at least one processor; detecting a command for switching to a power-saving mode; and if the command for switching to the power saving mode is detected, limiting operations of the at least one processor to block set functions other than a power saving call function in accordance with at least one set power saving scheme.

Abstract: Disclosed is a light emitting device. A light emitting device comprises a plurality of N-type semiconductor layers including a first N-type semiconductor layer and a second N-type semiconductor layer on the first N-type semiconductor layer, an active layer on the second N-type semiconductor layer, and a P-type semiconductor layer on the active layer, wherein the first N-type semiconductor layer comprises a Si doped Nitride layer and the second N-type semiconductor layer comprises a Si doped Nitride layer, and wherein the first and second N-type semiconductor layers have a Si impurity concentration different from each other.

Abstract: An electrostatic energy generator may include one or more first tire cord fabrics each including a conductive material which is a wire-shaped electrode and a non-conductive material, the non-conductive material configured to surround an outer peripheral surface of the conductive material, and one or more second tire cord fabrics each including a conductive material which is a wire-shaped electrode, and a material configured to surround an outer peripheral surface of the conductive material that is different from the non-conductive material of the first tire cord fabric, wherein the first tire cord fabric and the second tire cord fabric are arranged in a longitudinal direction so as to be in contact with each other and form a bundle, such that frictional electricity is generated due to a friction between the first tire cord fabric and the second tire cord fabric.

Abstract: Provided is an electrostatic energy harvester. A two-dimensionally structured material is transferred onto a ferroelectric or piezoelectric material layer, a property of the two-dimensionally structured material is controlled by poling performed on the ferroelectric or piezoelectric material to generate electric power generated by friction between the two-dimensionally structured material and a frictional charged material, and the electrostatic energy harvester has improved transparency and mechanical properties using the two-dimensionally structured material.

Abstract: An apparatus and method is provided for controlling a stepping motor in a digital photographing apparatus, the apparatus including: a temperature measuring unit for measuring a temperature; and a digital signal processor (DSP) for determining a measured temperature driving value of the stepping motor in correspondence with the measured temperature, changing the determined driving value based on a target position to which the stepping motor is supposed to move, and outputting the changed driving value to the stepping motor. Accordingly, power consumption of image capturing apparatuses may be eventually reduced by reducing power consumption of a stepping motor by driving the stepping motor with different driving values depending on temperatures and positions thereof.

Abstract: An ultrasound imaging device and method for clutter filtering is provided. The ultrasound imaging device provides logic for calculating signal characteristic values from an in-phase/quadrature-phase (I/Q) of an ultrasound signal reflected from an object and determining to remove a clutter element from the I/Q signal through comparison of the calculated signal characteristic values. Accordingly, the ultrasound imaging device provides a blood flow distribution of the object, more precisely visualized, to a user.

Abstract: Provided is a method of controlling voltage levels of overall outputs in a combinational mode, in an ultrasonic diagnosis apparatus that may operate in the combinational mode. A judging unit of the ultrasonic diagnosis apparatus may judge whether at least a part of individual modes included in the combinational mode exceeds a threshold determined by safety standards, in accordance with an inputted overall output voltage level control command. When it is judged that at least the part of the individual modes exceeds the threshold determined by the safety standards, an output control unit may maintain an individual output with respect to the at least the part, among the voltage levels that may be outputted from a transducer, to be below the threshold, so that the individual output may be below the standards in accordance with the overall output control command.

Abstract: Disclosed is a method of preparing methylol alkanal. According to the present invention, a yield of methylol alkanal may be improved without using formaldehyde in an excess amount of a theoretical minimum molar ratio or more, formaldehyde wastewater may be reduced, and the amount of formaldehyde remainder, which may act as a hydrogenation catalyst poison, comprised in the methylol alkanal is decreased when the prepared methylol alkanal is hydrogenated resulting in improvement in efficiency of the hydrogenation.

Abstract: Disclosed is a light emitting device. A light emitting device comprises a plurality of N-type semiconductor layers including a first N-type semiconductor layer and a second N-type semiconductor layer on the first N-type semiconductor layer, an active layer on the second N-type semiconductor layer, and a P-type semiconductor layer on the active layer, wherein the first N-type semiconductor layer comprises a Si doped Nitride layer and the second N-type semiconductor layer comprises a Si doped Nitride layer, and wherein the first and second N-type semiconductor layers have a Si impurity concentration different from each other.

Abstract: A semiconductor light emitting device includes a first nitride semiconductor layer, a dopant doped semiconductor layer on the first nitride semiconductor layer, an active layer on the dopant doped semiconductor layer, a delta doped layer on the active layer, a superlattice structure on the delta doped layer, an undoped layer on the superlattice layer, a second nitride semiconductor layer including a first n-type dopant, a third nitride semiconductor layer including a second n-type dopant, and a fourth nitride semiconductor layer including a third n-type dopant.

Abstract: Disclosed is a light emitting device. A light emitting device comprises a plurality of N-type semiconductor layers including a first N-type semiconductor layer and a second N-type semiconductor layer on the first N-type semiconductor layer, an active layer on the second N-type semiconductor layer, and a P-type semiconductor layer on the active layer, wherein the first N-type semiconductor layer comprises a Si doped Nitride layer and the second N-type semiconductor layer comprises a Si doped Nitride layer, and wherein the first and second N-type semiconductor layers have a Si impurity concentration different from each other.

Abstract: Provided are an apparatus and a method for monitoring a dangerous situation of a human body. The dangerous situation such as the apnea or suffocation of the human body is determined based on variations in one of a cardiac impulse amplitude signal and a respiration amplitude signal of the human body and is transmitted to a wired or wireless terminal, thereby monitoring the dangerous situation of the human body in a sleep state.

Abstract: Disclosed is a light emitting device. A light emitting device comprises a plurality of N-type semiconductor layers including a first N-type semiconductor layer and a second N-type semiconductor layer on the first N-type semiconductor layer, an active layer on the second N-type semiconductor layer, and a P-type semiconductor layer on the active layer, wherein the first N-type semiconductor layer comprises a Si doped Nitride layer and the second N-type semiconductor layer comprises a Si doped Nitride layer, and wherein the first and second N-type semiconductor layers have a Si impurity concentration different from each other.

Abstract: A semiconductor light emitting device includes a first nitride semiconductor layer, a dopant doped semiconductor layer on the first nitride semiconductor layer, an active layer on the dopant doped semiconductor layer, a delta doped layer on the active layer, a superlattice structure on the delta doped layer, an undoped layer on the superlattice layer, a second nitride semiconductor layer including a first n-type dopant, a third nitride semiconductor layer including a second n-type dopant, and a fourth nitride semiconductor layer including a third n-type dopant.

Abstract: Disclosed is an ultrasound color Doppler image system. The ultrasound color Doppler image system includes a calculation unit that calculates a mean value associated with an I/Q signal corresponding to a pixel of a color image in an ultrasound image and generates a multiplication value using the calculated mean value; a comparison unit that compares the generated multiplication value with the mean value; and a masking unit that performs masking of the pixel based on a comparison result, and, the calculation unit calculates the mean value of the I/Q signal for each frame, selects a reference mean value based on scales of the calculated mean values, and generates the multiplication value by multiplying the selected reference mean value and a scale factor.

Abstract: A semiconductor light emitting device includes a first nitride semiconductor layer, a dopant doped semiconductor layer on the first nitride semiconductor layer, an active layer on the dopant doped semiconductor layer, a delta doped layer on the active layer, a superlattice structure on the delta doped layer, an undoped layer on the superlattice layer, a second nitride semiconductor layer including a first n-type dopant, a third nitride semiconductor layer including a second n-type dopant, and a fourth nitride semiconductor layer including a third n-type dopant.

Abstract: Disclosed is a method for selective dealkylation of alkyl-substituted C9+ aromatic compounds using a bimodal porous dealkylation catalyst at a low temperature. The catalyst has a bimodal porous structure including both mesopores and micropores. The catalyst includes a crystalline aluminosilicate and a metal. The catalyst is highly active at a low temperature. According to the method, C9+ aromatic compounds substituted with at least one C2+ alkyl group as by-products formed by xylene production can be selectively dealkylated and converted to BTX, etc. on a large scale within a short time. In addition, the method is an environmentally friendly process entailing reduced waste treatment cost when compared to conventional mesitylene production methods. Therefore, high value-added mesitylene can be separated from low value-added C9+ aromatic compounds at lower cost compared to conventional methods.

Abstract: Disclosed are a light emitting device. A light emitting diode comprises a light emitting device comprises a plurality of N-type semiconductor layers including a first N-type semiconductor layer and a second N-type semiconductor layer on the first N-type semiconductor layer, an active layer on the second N-type semiconductor layer, and a P-type semiconductor layer on the active layer, wherein the first N-type semiconductor layer comprises a Si doped Nitride layer and the second N-type semiconductor layer comprises a Si doped Nitride layer, and wherein the first and second N-type semiconductor layers have a Si impurity concentration different from each other.

Abstract: Embodiments of adaptively performing clutter filtering are disclosed. In one embodiment, by way of non-limiting example, an ultrasound system comprises: an ultrasound data acquisition unit configured to transmit and receive ultrasound signals to and from a target object to output a plurality of ultrasound data corresponding to each pixel of a color Doppler mode image; and a processing unit in communication with the ultrasound data acquisition unit and being configured to calculate a power difference value corresponding to each of the pixels based on the plurality of ultrasound data, determine whether the power difference value is equal to or larger than a first threshold value, and if the power difference value is equal to or larger than the first threshold value, then perform first clutter filtering upon the plurality of ultrasound data, or if the power difference value is less than the first threshold value, then perform second clutter filtering upon the plurality of ultrasound data.