Abstract: Disclosed are a light emitting device package and a method for fabricating the same. The light emitting device package includes: a trench formed in a substrate; a light emitting structure which is directly grown on a first area of the trench in the substrate; an electrode on the substrate; a wire bonding connecting the electrode with the light emitting structure; and a filler filling the trench.

Abstract: Embodiments of adaptively performing clutter filtering are disclosed. In one embodiment, by way of non-limiting example, an ultrasound system comprises: an ultrasound data acquisition unit configured to transmit and receive ultrasound signals to and from a target object to thereby output a plurality of ultrasound data for obtaining a color Doppler mode image, wherein the target object includes at least one of a tissue and a blood flow; and a processing unit placed in communication with the ultrasound data acquisition unit and being configured to locate the plurality of ultrasound data on a complex plane, the processing unit being further configured to perform a circle fitting upon the plurality of ultrasound data located on the complex plane and perform a downmixing and a clutter filtering upon the circle-fitted ultrasound data in consideration of speed of the tissue.

Abstract: A semiconductor light emitting device includes a first nitride semiconductor layer, a dopant doped semiconductor layer on the first nitride semiconductor layer, an active layer on the dopant doped semiconductor layer, a delta doped layer on the active layer, a superlattice structure on the delta doped layer, an undoped layer on the superlattice layer, a second nitride semiconductor layer including a first n-type dopant, a third nitride semiconductor layer including a second n-type dopant, and a fourth nitride semiconductor layer including a third n-type dopant.

Abstract: Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The active layer comprises a first active layer, a second active layer, an electron barrier layer on the first conductive type semiconductor layer. The first active layer and the second active layer comprise a quantum well layer and a quantum barrier layer. The electron barrier layer is formed between the first active layer and the second active layer. The second conductive type semiconductor layer is formed on the active layer.

Abstract: Disclosed is a method for selective dealkylation of alkyl-substituted C9+ aromatic compounds using a bimodal porous dealkylation catalyst at a low temperature. The catalyst has a bimodal porous structure including both mesopores and micropores. The catalyst includes a crystalline aluminosilicate and a metal. The catalyst is highly active at a low temperature. According to the method, C9+ aromatic compounds substituted with at least one C2+ alkyl group as by-products formed by xylene production can be selectively dealkylated and converted to BTX, etc. on a large scale within a short time. In addition, the method is an environmentally friendly process entailing reduced waste treatment cost when compared to conventional mesitylene production methods. Therefore, high value-added mesitylene can be separated from low value-added C9+ aromatic compounds at lower cost compared to conventional methods.

Abstract: An apparatus and method is provided for controlling a stepping motor in a digital photographing apparatus, the apparatus including: a temperature measuring unit for measuring a temperature; and a digital signal processor (DSP) for determining a measured temperature driving value of the stepping motor in correspondence with the measured temperature, changing the determined driving value based on a target position to which the stepping motor is supposed to move, and outputting the changed driving value to the stepping motor. Accordingly, power consumption of image capturing apparatuses may be eventually reduced by reducing power consumption of a stepping motor by driving the stepping motor with different driving values depending on temperatures and positions thereof.

Abstract: A semiconductor light emitting device includes an active layer; a first nitride semiconductor layer on the active layer; a first delta-doped layer on the first nitride semiconductor layer; a second nitride semiconductor layer on the first delta-doped layer; a second delta-doped layer on the second nitride semiconductor layer; a third nitride semiconductor layer on the second delta-doped layer. The first delta-doped layer, the second nitride semiconductor layer, the second delta-doped layer, and the third nitride semiconductor layer are doped with an n-type dopant.

Abstract: Provided are a nitride semiconductor light-emitting device and a method for manufacturing the same, capable of improving light emitting efficiency by forming a reflection layer on a lateral side of an LED chip. An embodiment provides a nitride semiconductor light-emitting device includes a light-emitting device chip and a reflection layer. The reflection layer is formed on a lateral side of the light-emitting device chip.

Abstract: Disclosed are a light emitting device. A light emitting diode comprises a light emitting device comprises a plurality of N-type semiconductor layers including a first N-type semiconductor layer and a second N-type semiconductor layer on the first N-type semiconductor layer, an active layer on the second N-type semiconductor layer, and a P-type semiconductor layer on the active layer, wherein the first N-type semiconductor layer comprises a Si doped Nitride layer and the second N-type semiconductor layer comprises a Si doped Nitride layer, and wherein the first and second N-type semiconductor layers have a Si impurity concentration different from each other.

Abstract: Examples for filtering clutter signals from receive signals obtained in a Doppler mode in an ultrasound system are disclosed. The signal processing unit processes received echoes to provide 2-dimensional image data of the target object, the 2-dimensional image data being representative of a 2-dimensional image. A region of interest (ROI) is set on the 2-dimensional image of the target object, The signal processing unit obtains a Doppler mode image pixel data corresponding to the ROI. The signal processing unit sets filter cutoff frequencies based on characteristics of the Doppler mode image pixel data and filter the Doppler mode image pixel data with the set filter cutoff frequencies to output filtered pixel data with clutter signals filtered.

Abstract: Embodiments for setting eigenvectors for clutter signal filtering from Doppler signals in an ultrasound system are disclosed. In one embodiment, the ultrasound system includes: a Doppler signal acquisition unit configured to transmit and receive ultrasound signals to and from a target object to acquire first Doppler signals; and a processing unit configured to compute a plurality of eigenvectors by using the first Doppler signals and form second Doppler signals corresponding to directions of the computed eigenvectors, the processing unit being further configured to compute component values of the second Doppler signals and set eigenvectors for clutter signal filtering among the plurality of eigenvectors by using the computed component values.

Abstract: An apparatus for displaying a thermal risk indicator, which measures at least one analyzing indicator about a risk of a thermal bio-effect by analyzing an ultrasound beam generated from an ultrasound output unit of a transmitting transducer, calculates a thermal risk indicator based on the at least one analyzing indicator, and displays the thermal risk indicator through a display unit.

Abstract: A light emitting diode of one embodiment includes a light emitting device having a plurality of N-type semiconductor layers including a first N-type semiconductor layer and a second N-type semiconductor layer on the first N-type semiconductor layer, an active layer on an upper layer of the plurality of N-type semiconductor layers, and a P-type semiconductor layer on the active layer. The first N-type semiconductor layer includes a first Si doped Nitride layer and the second N-type semiconductor layer includes a second Si doped Nitride layer. The first and second N-type semiconductor layers have a Si impurity concentration different from each other.

Abstract: Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: an active layer; a first nitride semiconductor layer on the active layer; a first delta-doped layer on the first nitride semiconductor layer; a second nitride semiconductor layer on the first delta-doped layer; a second delta-doped layer on the second nitride semiconductor layer; a third nitride semiconductor layer on the second delta-doped layer.

Abstract: Provided is a method of controlling voltage levels of overall outputs in a combinational mode, in an ultrasonic diagnosis apparatus that may operate in the combinational mode. A judging unit of the ultrasonic diagnosis apparatus may judge whether at least a part of individual modes included in the combinational mode exceeds a threshold determined by safety standards, in accordance with an inputted overall output voltage level control command. When it is judged that at least the part of the individual modes exceeds the threshold determined by the safety standards, an output control unit may maintain an individual output with respect to the at least the part, among the voltage levels that may be outputted from a transducer, to be below the threshold, so that the individual output may be below the standards in accordance with the overall output control command.

Abstract: An ultrasound diagnosis apparatus providing a map of an interest index. The ultrasound diagnosis apparatus includes: a calculating unit for calculating a mechanical index (MI) corresponding to a depth value in a direction in which ultrasound travels from an ultrasound output part of a transmission transducer; a visualization unit for generating an MI map in which a relationship between the calculated MI and the depth value is visualized in the form of a graph; and a display unit for displaying the MI map.

Abstract: A diagnostic ultrasound system may visualize and display a mechanical index (MI) as a map. The diagnostic ultrasound system may include a calculating unit to calculate an MI at a depth value on an ultrasonic direction axis from an ultrasonic output unit of an ultrasonic transducer, a visualizing unit to visualize a relationship between the calculated MI and the corresponding depth value in the form of a graph to generate an MI map, and a display unit to display the MI map.

Abstract: Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The active layer comprises a first active layer, a second active layer, an electron barrier layer on the first conductive type semiconductor layer. The first active layer and the second active layer comprise a quantum well layer and a quantum barrier layer. The electron barrier layer is formed between the first active layer and the second active layer. The second conductive type semiconductor layer is formed on the active layer.

Abstract: A data bus line control circuit prevents a problem of a data access operation on a global data bus (GDB) line although two blocks are simultaneously selected. The data bus line control circuit includes: a global data bus line which is arranged between memory units adjacent to each other as two pairs, and transmits a data from a local data bus line positioned between adjacent sub blocks; and transmission means which is connected between the local data bus line and the global data bus line, and transmits bit line signals of two sub blocks to one pair of global data bus lines different from each other through the local data bus line, when the two sub blocks are simultaneously selected by a block isolation selection signal. As a result, a circuit arrangement and a layout design become simplified, and two operations of 8K refresh and 4K refresh are possible in one chip, therefore, two kinds of effects can be achieved by one chip.