Abstract: Various embodiments of the disclosure relate to a device and a method for modifying a UPF in an electronic device. The electronic device may include: a communication circuit and a processor. The processor may be configured to: perform data communication through a PDU session and IP address 1, identify IP address 2 of the PDU session related to modification of the UPF, identify an RTT in which the IP address 1 is used and an RTT in which the IP address 2 is used, in a state in which the IP address 1 and the IP address 2 of the PDU session are allocated, modify the data path to IP address 2, based on a result of comparing the RTT in which IP address 1 is used and the RTT in which IP address 2 is used, prior to expiration of a valid lifetime of IP address 1, and release the IP address 1 based on modification of the data path to the IP address 2.

Abstract: Techniques for training a machine-learning model are described. In an example, a computer generates a first pseudo-label indicating a first mask associated with a first object detected by a first machine-learning model in a first training image. A transformed image of the first training image can be generated using a transformation. Based on the transformation, a second pseudo-label indicating a second mask detected in the transformed image and corresponding to the first mask can be determined. A second machine-learning model can be trained using the second pseudo-label. The trained, second machine-learning model can detect a third mask associated with a second object based on a second image.

Abstract: A substrate oxidation assembly includes: a chamber body defining a processing volume; a substrate support disposed in the processing volume; a plasma source coupled to the processing volume; a steam source fluidly coupled to the processing volume; and a substrate heater. A method of processing a semiconductor substrate includes: initiating conformal radical oxidation of high aspect ratio structures of the substrate comprising: heating the substrate; and exposing the substrate to steam; and conformally oxidizing the substrate. A semiconductor device includes a silicon and nitrogen containing layer; a feature formed in the silicon and nitrogen containing layer having an aspect ratio of at least 40:1; and an oxide layer on the face of the feature having a thickness in a bottom region of the silicon and nitrogen containing layer that is at least 95% of a thickness of the oxide layer in a top region.

Abstract: Disclosed is a method and system for providing an object for content arrangement. A content arrangement method includes providing a cue card list that is a card-type dedicated object for content arrangement; and arranging a content set in a card unit using a cue card selected from the cue card list.

Abstract: A frequency multiplier includes a capacitor circuit having a plurality of capacitors therein, and is responsive to a differential input signal applied to an inverting input node and a non-inverting input node thereof. A frequency multiplication circuit (FMC) is provided, which has a plurality of transistors therein. The FMC is configured to receive components of the differential input signal passing through the plurality of capacitors, and multiply a frequency of the components of the differential input signal. A plurality of inductor loads are provided, which are connected to an inverting output node and a non-inverting output node of the FMC, and are configured to convert a current signal generated by the FMC into a voltage signal.

Abstract: A blank mask includes a light transmissive substrate, and a light-blocking layer, disposed on the light transmissive substrate, comprising a transition metal and either one or both of oxygen and nitrogen. An average value of grain sizes of a surface of the light-blocking layer ranges from 14 nm to 24 nm.

Abstract: An electronic device includes a memory and a processor configured to: store, in the memory, relationship information comprising identification information of at least one application, verification information for verification of each of the at least one application, and information for establishing a protocol data unit (PDU) session for each of the at least one application; confirm a first value on the basis of a first application having first identification information included in the relationship information; confirm, by using the relationship information, a second value on the basis of verification information corresponding to the first identification information; establish, on the basis of the first value and the second value being the same, a first PDU session by using the information for establishing the PDU session corresponding to the first application; and transmit or receive data related to the first application by using the first PDU session.

Abstract: The present disclosure generally provides methods of providing at least metastable radical molecular species and/or radical atomic species to a processing volume of a process chamber during an electronic device fabrication process, and apparatus related thereto. In one embodiment, the apparatus is a gas injection assembly disposed between a remote plasma source and a process chamber. The gas injection assembly includes a body, a dielectric liner disposed in the body that defines a gas mixing volume, a first flange to couple the gas injection assembly to a process chamber, and a second flange to couple the gas injection assembly to the remote plasma source. The gas injection assembly further includes one or more gas injection ports formed through the body and the liner.

Abstract: The present invention relates to a process of converting carbon dioxide using a combination of a carbon dioxide mineralization and the metabolism of sulfur-oxidizing microorganisms. According to the process, a carbonate produced in the carbon dioxide mineralization reaction can be converted to a useful substance without supplying an external additional energy source (light, electrical energy, etc.) and mineral resources (metal ions). In addition, the process can be continuously performed by recycling metal ions necessary for the carbon dioxide mineralization reaction.

Abstract: A method of preparing quantum dot includes: forming a first mixture comprising a core, a zinc-containing first material, and a selenium-containing second material; forming a first intermediate comprising a core and a first shell, from the first mixture, followed by forming a second mixture comprising the first intermediate; forming a third mixture by adding a zinc-containing third material and a sulfur-containing fourth material to the second mixture; forming a second intermediate comprising the core, the first shell, and a second shell, from the third mixture, followed by forming a fourth mixture comprising the second intermediate; adding a ligand precursor-containing fifth material to the fourth mixture; and forming a ligand layer covering the second shell of the second intermediate, wherein an amount of the ligand precursor is in a range of about 10 pbw to about 22 pbw based on 100 pbw of the zinc-containing third material in the fourth mixture.

Abstract: A mixer includes a load portion connected between an input terminal of a first power voltage and an output terminal of the radio frequency transmit signal and configured to adjust a magnitude of the radio frequency transmit signal, a first switching unit connected to an output terminal of the radio frequency transmit signal, and configured to perform a first switching operation in response to a plurality of local oscillation signals, and a second switching unit connected between the first switching unit and an input terminal of a second power voltage, lower than the first power voltage, and configured to perform a second switching operation in response to a plurality of baseband signals, the plurality of local oscillation signals include an I+ baseband signal, an I? baseband signal, a Q+ baseband signal, and a Q? baseband signal, and the second switching unit includes a first branch performing a switching operation under control of the I+ baseband signal and the Q+ baseband signal, a second branch performing

Abstract: An electronic device includes a memory, a communication circuit, and a processor. The memory is configured to store an application and an edge enabler client. The communication circuit is configured to communicate with at least one of a first server, a second server, or a third server. The application is configured to perform one or more functions corresponding to the third server. The processor is configured to receive access information for accessing the second server from the first server. The processor is configured to receive access information of the third server from each of a plurality of second servers. The processor is configured to check at least one or more third servers capable of providing a service The processor is configured to select the third server to request access among a plurality of third servers. The processor is configured to perform the service using the selected third server.

Abstract: An electronic device and a method performed by an electronic device are provided. The electronic device includes a memory for storing at least one of an application or an edge enabler client (EEC), a communication circuit to be used for connection between the electronic device and at least one of a first server, second servers, or third servers, and a processor, wherein the application is configured to perform a service supported by a third server, and the processor can be configured to receive access information for access to the second servers from the first server, select a second server to be accessed, based on information related to locations of the second servers and information related to location of the electronic device in in response to the information related to the locations of the second servers included in the access information, and access the selected second server to perform the service.

Abstract: An electronic device and an operation method of an electronic device are provided. The electronic device includes a memory storing an application, an edge enabler client (EEC), and/or a user equipment (UE) route selection policy (URSP) rule used for producing a session used by the electronic device, a communication circuit used for a communication connection between the electronic device and at least one of a first server, a plurality of second servers, or a third server disposed outside the electronic device, via a base station, and a processor, the application being configured to perform, in the electronic device, one or more services corresponding to an application executable in the third server, and the processor is configured to identify identification information of the EEC and identification information of an EEC included in the URSP rule, in response to activation of the EEC, to set a first packet data unit (PDU) session.

Abstract: The present disclosure generally provides methods of providing at least metastable radical molecular species and/or radical atomic species to a processing volume of a process chamber during an electronic device fabrication process, and apparatus related thereto. In one embodiment, the apparatus is a gas injection assembly disposed between a remote plasma source and a process chamber. The gas injection assembly includes a body, a dielectric liner disposed in the body that defines a gas mixing volume, a first flange to couple the gas injection assembly to a process chamber, and a second flange to couple the gas injection assembly to the remote plasma source. The gas injection assembly further includes one or more gas injection ports formed through the body and the liner.

Abstract: Provided is a ferroelectric thin-film structure including a semiconductor substrate, a first ferroelectric layer on the semiconductor substrate, and a second ferroelectric layer on the semiconductor substrate. The second ferroelectric layer is spaced apart from the first ferroelectric layer and has a different dielectric constant from the first ferroelectric layer. The first ferroelectric layer and the second ferroelectric layer may be different from each other in terms of the amount of a dopant contained therein, and may exhibit different threshold voltages when applied to transistors.

Abstract: An electrostatic purification device includes a purification tank housing configured to accommodate a fluid, a first electrode and a second electrode provided in the purification tank housing, a direct current (DC) power supply configured to apply a DC to the first electrode and the second electrode, a controller configured to monitor a current density between the first electrode and the second electrode, and determine whether purification is completed based on the current density, a first valve configured to control an introduction flow of the fluid into the purification tank housing, a second valve configured to control a discharge flow of the fluid from the purification tank housing, and a heat exchanger configured to cool the fluid accommodated in the purification tank housing.

Abstract: The present disclosure generally provides methods of providing at least metastable radical molecular species and/or radical atomic species to a processing volume of a process chamber during an electronic device fabrication process, and apparatus related thereto. In one embodiment, the apparatus is a gas injection assembly disposed between a remote plasma source and a process chamber. The gas injection assembly includes a body, a dielectric liner disposed in the body that defines a gas mixing volume, a first flange to couple the gas injection assembly to a process chamber, and a second flange to couple the gas injection assembly to the remote plasma source. The gas injection assembly further includes one or more gas injection ports formed through the body and the liner.

Abstract: A blank mask includes a transparent substrate and a light shielding film disposed on the transparent substrate. A surface of the light shielding film has a controlled power spectrum density value at a spatial frequency of 1 ?m?1 to 10 ?m?1. The surface of the light shielding film has a controlled minimum power spectrum density value at the spatial frequency of 1 ?m?1 to 10 ?m?1. An Rq value of the surface of the light shielding film is 0.25 nm to 0.55 nm.