Abstract: Provided is a super-resolution holographic microscope including a light source configured to emit input light, a diffraction grating configured to split the input light into first diffracted light and second diffracted light, a mirror configured to reflect the first diffracted light, a wafer stage arranged on an optical path of the second diffracted light and on which a wafer is configured to be arranged, and a camera configured to receive the first diffracted light that is reflected by the mirror and the second diffracted light that is reflected by the wafer to generate a plurality of hologram images of the wafer.

Abstract: Disclosed a plant cultivation system including: a replaceable cultivation box including a housing, and identification information of the cultivation box, and an electronic device configured to acquire the identification information from the cultivation box, detect state information about an inside of the cultivation box or around the cultivation box using a sensor, and spray liquid into the cultivation box based on the identification information and the state information.

Abstract: In one example, a chamber inlet assembly includes a chamber inlet, an outer coupling for a delivery line, and an inner coupling for a processing region of a processing chamber. The inner coupling and the outer coupling are on inner and outer ends, respectively, of the chamber inlet, wherein a cross-sectional area of the inner coupling is larger than a cross-sectional area of the outer coupling. The chamber inlet assembly also includes a longitudinal profile including the inner and outer ends and a first side and a second side, the first and second sides being on opposite sides of the chamber inlet, wherein a shape of the longitudinal profile comprises at least one of triangular, modified triangular, trapezoidal, modified trapezoidal, rectangular, modified rectangular, rhomboidal, and modified rhomboidal. The chamber inlet assembly also includes cassette including the chamber inlet and configured to set into a side wall of the processing chamber.

Abstract: A transmitter device which transmits a first transmit signal and a second transmit signal having different wireless communication standards. The transmitter device includes a power amplifier that amplifies the first transmit signal in a first transmission mode. A first impedance circuit provides the amplified first transmit signal to a radio frequency output port. A second impedance circuit is connected to the first impedance circuit and provides an additional impedance to the first impedance circuit in the first transmission mode. A first switch provides the second transmit signal to the first impedance circuit in a second transmission mode. A second switch connects the second impedance circuit and a ground in the first transmission mode, and floats the second impedance circuit in the second transmission mode.

Abstract: A transmitter device which transmits a first transmit signal and a second transmit signal having different wireless communication standards. The transmitter device includes a power amplifier that amplifies the first transmit signal in a first transmission mode. A first impedance circuit provides the amplified first transmit signal to a radio frequency output port. A second impedance circuit is connected to the first impedance circuit and provides an additional impedance to the first impedance circuit in the first transmission mode. A first switch provides the second transmit signal to the first impedance circuit in a second transmission mode. A second switch connects the second impedance circuit and a ground in the first transmission mode, and floats the second impedance circuit in the second transmission mode.

Abstract: In one example, a chamber inlet assembly includes a chamber inlet, an outer coupling for a delivery line, and an inner coupling for a processing region of a processing chamber. The inner coupling and the outer coupling are on inner and outer ends, respectively, of the chamber inlet, wherein a cross-sectional area of the inner coupling is larger than a cross-sectional area of the outer coupling. The chamber inlet assembly also includes a longitudinal profile including the inner and outer ends and a first side and a second side, the first and second sides being on opposite sides of the chamber inlet, wherein a shape of the longitudinal profile comprises at least one of triangular, modified triangular, trapezoidal, modified trapezoidal, rectangular, modified rectangular, rhomboidal, and modified rhomboidal. The chamber inlet assembly also includes cassette including the chamber inlet and configured to set into a side wall of the processing chamber.

Abstract: A transmitter device which transmits a first transmit signal and a second transmit signal having different wireless communication standards. The transmitter device includes a power amplifier that amplifies the first transmit signal in a first transmission mode. A first impedance circuit provides the amplified first transmit signal to a radio frequency output port. A second impedance circuit is connected to the first impedance circuit and provides an additional impedance to the first impedance circuit in the first transmission mode. A first switch provides the second transmit signal to the first impedance circuit in a second transmission mode.

Abstract: An antenna structure is provided. The antenna structure includes at least one feeder, a plurality of dielectric substrates, a plurality of conductive plates disposed between the plurality of dielectric substrates, the plurality of conductive plates including at least one opening, and a radiator electrically connected to the at least one feeder through conductive vias in the plurality of dielectric substrates and the plurality of conductive plates. The radiator includes a plurality of first parasitic conductive plates spaced apart from each other, and a second parasitic conductive plate disposed between the plurality of first parasitic conductive plates, the second parasitic conductive plate being spaced apart from the plurality of first parasitic conductive plates.

Abstract: Methods for conformal radical oxidation of structures are provided. The method comprises positioning a substrate in a processing region of a processing chamber. The method further comprises flowing hydrogen gas into a precursor activator at a first flow rate, wherein the precursor activator is fluidly coupled with the processing region. The method further comprises flowing oxygen gas into the precursor activator at a second flow rate. The method further comprises flowing argon gas into the precursor activator at a third flow rate. The method further comprises generating a plasma in the precursor activator from the hydrogen gas, oxygen gas, and argon gas. The method further comprises flowing the plasma into the processing region. The method further comprises exposing the substrate to the plasma to form an oxide film on the substrate, wherein a growth rate of the oxide film is controlled by adjusting the third flow rate.

Abstract: A method for controlling a laundry processing apparatus, according to an embodiment of the present invention, is a method for controlling a clothes processing apparatus, comprising the steps of: inputting a “drying” start command; forwardly rotating a drying drum and a drying fan; supplying hot air into the drying drum; operating a timer so as to calculate drying time; and operating a dryness sensor so as to detect the dryness of laundry, wherein a controller determines that the laundry is tangled, if a dryness sensing value (K) detected by the dryness sensor is greater than or equal to a first set value (k1) before a first set time (T1) elapses after “drying” starts, and the controller performs a primary laundry untangling process for reversely rotating the drying drum for a second set time (T2).

Abstract: A substrate oxidation assembly includes: a chamber body defining a processing volume; a substrate support disposed in the processing volume; a plasma source coupled to the processing volume; a steam source fluidly coupled to the processing volume; and a substrate heater. A method of processing a semiconductor substrate includes: initiating conformal radical oxidation of high aspect ratio structures of the substrate comprising: heating the substrate; and exposing the substrate to steam; and conformally oxidizing the substrate. A semiconductor device includes a silicon and nitrogen containing layer; a feature formed in the silicon and nitrogen containing layer having an aspect ratio of at least 40:1; and an oxide layer on the face of the feature having a thickness in a bottom region of the silicon and nitrogen containing layer that is at least 95% of a thickness of the oxide layer in a top region.

Abstract: The present disclosure generally provides methods of providing at least metastable radical molecular species and/or radical atomic species to a processing volume of a process chamber during an electronic device fabrication process, and apparatus related thereto. In one embodiment, the apparatus is a gas injection assembly disposed between a remote plasma source and a process chamber. The gas injection assembly includes a body, a dielectric liner disposed in the body that defines a gas mixing volume, a first flange to couple the gas injection assembly to a process chamber, and a second flange to couple the gas injection assembly to the remote plasma source. The gas injection assembly further includes one or more gas injection ports formed through the body and the liner.

Abstract: Embodiments described herein generally relate to conformal oxidation processes for flash memory devices. In conventional oxidation processes for gate structures, growth rates have become too fast, ultimately creating non-conformal films. To create a preferred growth rate for SiO2 on SiNx films, embodiments in this disclosure use a thermal combustion of a ternary mixture of H2+O2+N2O to gain SiO2 out of Si containing compounds. Using this mixture provides a lower growth in comparison with using only H2 and O2, resulting in a lower sticking coefficient. The lower sticking coefficient allows an optimal amount of atoms to reach the bottom of the gate, improving the conformality in 3D NAND SiO2 oxidation layers, specifically for ONO replacement tunneling gate formation.

Abstract: According to various example embodiments, an electronic device is disclosed. The electronic device includes a housing having a first surface facing a first direction and a second surface facing a second, opposing direction. A first area of the first surface includes a plurality of selectable input keys. A second area of the first surface excludes the plurality of keys. A sensor module, such as a fingerprint sensor, is installed to the first area.

Abstract: Methods for conformal radical oxidation of structures are provided. In one implementation, the method comprises flowing hydrogen into a processing chamber at a first flow rate, wherein the processing chamber has a substrate positioned therein. The method further comprises flowing oxygen into a precursor activator at a second flow rate. The method further comprises flowing argon into the precursor activator at a third flow rate. The method further comprises generating a plasma in the precursor activator from the oxygen and argon. The method further comprises flowing the plasma into the processing chamber, wherein the plasma mixes with the hydrogen gas to create an activated processing gas. The method further comprises exposing the substrate to the activated gas to form an oxide film on the substrate. A growth rate of the oxide film is controlled by adjusting the third flow rate.

Abstract: An apparatus for a vehicle includes a cooling fan installed in an engine compartment of the vehicle. A fan motor is connected with the cooling fan to drive the cooling fan. A state detector is configured to detect state data, and a controller is configured to control the cooling fan based on the state data when an intake temperature is within a predetermined range, to determine whether the state data satisfies a decision reference condition, and to lock the fan motor according to a change rate of air conditioner refrigerant pressure during a measurement time when the state data satisfies the decision reference condition.

Abstract: Provided is laundry treating apparatus which may include a cabinet, a tub provided in the cabinet, and a drum provided in the tub. A circulation path may be formed outside the tub along which air inside the tub circulates by passing through the tub and the circulation path. A plurality of cleaning nozzles may be provided at the circulation path and configured to inject water. A plurality of water supply passages and a plurality of water supply valves configured to open and close the water supply passages may be provided. A controller may sequentially control the water supply valves such that at least one of the water supply valves is open and another water supply valve is closed, such that at least one of the plurality of cleaning nozzles is open to allow water to be continuously supplied from the water supply source.

Abstract: The present invention relates to a process of converting carbon dioxide using a combination of a carbon dioxide mineralization and the metabolism of sulfur-oxidizing microorganisms. According to the process, a carbonate produced in the carbon dioxide mineralization reaction can be converted to a useful substance without supplying an external additional energy source (light, electrical energy, etc.) and mineral resources (metal ions). In addition, the process can be continuously performed by recycling metal ions necessary for the carbon dioxide mineralization reaction.

Abstract: An antenna structure is provided. The antenna structure includes at least one feeder, a plurality of dielectric substrates, a plurality of conductive plates disposed between the plurality of dielectric substrates, the plurality of conductive plates including at least one opening, and a radiator electrically connected to the at least one feeder through conductive vias in the plurality of dielectric substrates and the plurality of conductive plates. The radiator includes a plurality of first parasitic conductive plates spaced apart from each other, and a second parasitic conductive plate disposed between the plurality of first parasitic conductive plates, the second parasitic conductive plate being spaced apart from the plurality of first parasitic conductive plates.

Abstract: In one example, a chamber inlet assembly includes a chamber inlet, an outer coupling for a delivery line, and an inner coupling for a processing region of a processing chamber. The inner coupling and the outer coupling are on inner and outer ends, respectively, of the chamber inlet, wherein a cross-sectional area of the inner coupling is larger than a cross-sectional area of the outer coupling. The chamber inlet assembly also includes a longitudinal profile including the inner and outer ends and a first side and a second side, the first and second sides being on opposite sides of the chamber inlet, wherein a shape of the longitudinal profile comprises at least one of triangular, modified triangular, trapezoidal, modified trapezoidal, rectangular, modified rectangular, rhomboidal, and modified rhomboidal. The chamber inlet assembly also includes cassette including the chamber inlet and configured to set into a side wall of the processing chamber.