Abstract: There is provided a method of extracting characters from a license plate of a vehicle performed by a license plate character extraction device. The method comprises: converting a input image obtained by capturing the license plate of the vehicle into a grayscale image; generating a converted image based on a result of comparing a value of at least one pixel included in the grayscale image with a first average of values of pixels adjacent to the at least one pixel; generating a refined image based on a result of comparing the converted image with a binarized image obtained by binarizing the converted image; and extracting characters included in the refined image.

Abstract: The method of preparing a laminate includes: preparing a process target, which is a laminate before being processed, where a light-shielding film has been disposed; and preparing a cleaned laminate through a first cleaning including applying UV rays and carbonated water to the process target, wherein the light-shielding film includes a transition metal and an element selected from the group consisting of oxygen, nitrogen, and carbon.

Abstract: A method and apparatus for forming a layer including a light transmitting substrate, and a light shielding film disposed on the light transmitting substrate, and a phase shift film disposed between the light transmitting substrate and the light shielding film. A center measuring area based on the center of the light shielding film and an edge measuring area being distant by 20 mm from the edge of the light shielding film. The center measuring area and the edge measuring area are respectively squares having a side of 20 ?m.

Abstract: A laminate for a blank mask includes a light-transmitting layer; a phase shift film disposed on the light-transmitting layer; and residual ions measured from a surface of the phase shift film through ion chromatography comprises at least one of sulfate ions in a concentration of 0 ng/cm2 to 0.05 ng/cm2, nitric oxide ions in a concentration of 0 ng/cm2 to 0.5 ng/cm2, or ammonium ions in a concentration of 0 ng/cm2 to 5 ng/cm2, or any combination thereof. A sum of concentrations of the residual ions is more than 0.

Abstract: The blank mask according to one embodiment of the present disclosure comprises a transparent substrate and a multilayer light shielding film disposed on the transparent substrate. The multilayer light shielding film comprises a transition metal and at least any one between oxygen and nitrogen. The multilayer light shielding film comprises a first light shielding film and a second light shielding film disposed on the first light shielding film. The multilayer light shielding film comprises total nine parts that are formed by trisection in a width direction and a length direction of an upper surface of the multilayer light shielding film. Each part of the multilayer light shielding film comprises a measuring range disposed in a side thereof.

Abstract: A blank mask including a transparent substrate and a light shielding film disposed on the transparent substrate, wherein the light shielding film comprises a transition metal and at least one selected from the group consisting of oxygen and nitrogen, and wherein when an optical density of the light shielding film is measured ten times by a light with a wavelength of 193 nm, a standard deviation of measured optical density is 0.009 or less, is disclosed.

Abstract: According to various embodiments, an electronic device includes at least one processor. The at least one processor may be configured to: confirm a data session establishment request from a first application executed by the at least one processor; confirm at least one first descriptor corresponding to the first application for path selection; confirm a first network interface corresponding to the at least one first confirmed descriptor based on the at least one first confirmed descriptor; establish a first data session corresponding to the at least one first confirmed descriptor; and transmit and/or receive data related to the first application through the first network interface using the first data session.

Abstract: According to various embodiments of the present invention, an antenna device can comprise: a substrate layer; a source antenna arranged on the substrate layer so as to include a radiating conductor for radiating electromagnetic waves in the direction in which one surface of the substrate layer is oriented; and a planar lens for converting quasi-spherical electromagnetic waves radiated from the source antenna into plane waves. The antenna device can be varied according to embodiments.

Abstract: Disclosed is a quantum computing system including an input processing unit that performs a quantum dot qubit-based quantum computing operation based on a user input algorithm and input data including information for controlling an operation, and converts the user input algorithm into a gate-based transformation algorithm, an algorithm decomposition unit that generates an equivalent circuit corresponding to the transformation algorithm, a quantum circuit mapping unit that generates a modified equivalent circuit by rearranging qubits constituting the equivalent circuit, a driving signal generation unit that generates a driving signal for controlling the modified equivalent circuit, a computing execution unit that performs the quantum computing operation by applying the driving signal to the modified equivalent circuit and generates computing data, and an output unit that converts the computing data into logical data and outputs the logical data as result data.

Abstract: An electronic device and an operating method of an electronic device are provided. The electronic device receives, from a first server, access information about a second server for accessing the second server, receives access information about a third server from the second server accessed based on the access information about the second server, in response to a service connection request using the third server of an application, checks the validity of the application based on data for verifying the validity of the application included in the access information about the third server, and performs the service by accessing the third server based on the result of identifying the validity of the application.

Abstract: An electroplating apparatus includes: an electroplating bath including an anode region, in which an anode electrode is arranged, a cathode region and a membrane; a head unit including a contact ring holding a wafer and configured so that a first cathode potential is applied to the contact ring during an electroplating process; a reverse potential electrode arranged adjacent to the membrane and configured so that a second cathode potential is applied to the reverse potential electrode during the electroplating process, and a reverse cathode potential is applied to the reverse potential electrode during a rinsing process, and a power supply unit configured to apply the first cathode potential and the second cathode potential during the electroplating process, and further configured to apply the reverse cathode potential and a reverse anode potential to the anode electrode during the rinsing process.

Abstract: A blank mask including a transparent substrate and a light shielding film disposed on the transparent substrate, wherein the light shielding film includes a transition metal and at least one selected from the group consisting of oxygen and nitrogen, and wherein a surface of the light shielding film has a first contact angle of 40° to 45° measured by using diiodo-methane as a first liquid contacting the surface of the light shielding film, is disclosed.

Abstract: A method of cleaning a substrate for a blank mask including: a first cleaning including irradiating a cleaning target substrate with a pre-treatment light to prepare a substrate cleaned with light, and a second cleaning including applying a first cleaning solution and a post-treatment light to the substrate cleaned with light to prepare the substrate for the blank mask, is disclosed.

Abstract: The present invention relates to a method for welding a half coil of a reactor, which performs the gas metal arc welding (GMAW) along a half coil temporarily welded to a welding machine body using an automatic welding machine to increase a formation amount of back beads, thereby increasing coupling strength of the half coil, increasing airtightness of a fluid flowing along the half coil, securing uniform welding quality by automatic welding, increasing productivity, and reducing production costs.

Abstract: Disclosed is a blank mask including a transparent substrate and a light shielding film disposed on the transparent substrate, wherein the light shielding film includes a transition metal and at least one selected from the group consisting of oxygen and nitrogen, wherein when a surface of the light shielding film includes nine sectors formed by trisecting the surface of the light shielding film vertically and horizontally, each of the nine sectors has a Rsk value, respectively, and an average value of the Rsk values of the nine sectors is equal to ?0.64 or more and less than or equal to 0, where Rsk value is a height symmetry of the surface of the light shielding film measured in accordance with ISO_4287, and wherein an average value of Rku values, which are kurtosis of the surface of the light shielding film measured in accordance with ISO_4287, of the nine sectors is 3 or less.

Abstract: An attenuator includes: a first transmission line connected between a first terminal and a first node; a second transmission line connected between the first node and a second terminal; a first resistor connected between the first terminal and a ground node; a second resistor connected between the second terminal and the ground node; and a third resistor connected between the first node and the ground node, wherein the first and second resistors each have a resistance that is higher than a resistance of the third resistor.

Abstract: A blank mask including: a transparent substrate and a light shielding film disposed on the transparent substrate, wherein the light shielding film includes a transition metal and at least one of oxygen and nitrogen, and wherein the light shielding film has an SA1 value of 60 to 90 mN/m according to Equation 1-1: SA1=?SL×tan ???[Equation 1-1] where, in the Equation 1-1, the ?SL is an interfacial energy between the light shielding film and a pure water and ? is a contact angle of the light shielding film measured with the pure water, is disclosed.

Abstract: In one example, a chamber inlet assembly includes a chamber inlet, an outer coupling for a delivery line, and an inner coupling for a processing region of a processing chamber. The inner coupling and the outer coupling are on inner and outer ends, respectively, of the chamber inlet, wherein a cross-sectional area of the inner coupling is larger than a cross-sectional area of the outer coupling. The chamber inlet assembly also includes a longitudinal profile including the inner and outer ends and a first side and a second side, the first and second sides being on opposite sides of the chamber inlet, wherein a shape of the longitudinal profile comprises at least one of triangular, modified triangular, trapezoidal, modified trapezoidal, rectangular, modified rectangular, rhomboidal, and modified rhomboidal. The chamber inlet assembly also includes cassette including the chamber inlet and configured to set into a side wall of the processing chamber.

Abstract: The present disclosure relates to a blank mask including: a transparent substrate; and a light shielding film disposed on the transparent substrate, wherein the light shielding film comprises a transition metal and at least one selected from the group consisting of oxygen and nitrogen, and wherein a Mtr value of Equation 1 below of a surface of the light shielding film is 6 or less: Mtr=|Rsk|*Rku ??[Equation 1] where, in the Equation 1, |Rsk| is an absolute value of an Rsk value, which is a height skewness of the surface of the light shielding film, and Rku is kurtosis of the surface of the light shielding film.

Abstract: According to an aspect, a method of preparing quantum dots includes a first operation of preparing a quantum dot seed solution; a second operation of growing a quantum dot by continuously injecting a quantum dot cluster solution into the quantum dot seed solution; a third operation of separating the grown quantum dot and dispersing the quantum dot in a solvent; and a fourth operation of further growing the quantum dot by continuously injecting the quantum dot cluster solution into the dispersed quantum dot.