Patents by Inventor Taewan An

Taewan An has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6375761
    Abstract: A magnetoresistive material with two metallic magnetic phases. The material exhibits the giant magnetoresistance effect (GMR). A first phase of the material includes a matrix of an electrically conductive ferromagnetic transition metal or an alloy thereof. A second precipitate phase exhibits ferromagnetic behavior when precipitated into the matrix and is antiferromagnetically exchange coupled to the first phase. The second precipitate phase can be electrically conductive rare earth pnictide or can be a Heusler alloy. A method of manufacturing magnetoresistive materials according to the present invention employs facing targets magnetron sputtering.
    Type: Grant
    Filed: April 30, 2001
    Date of Patent: April 23, 2002
    Assignee: The Research Foundation of State University of New York
    Inventors: Richard J. Gambino, Taewan Kim