Patents by Inventor Tahir Ghani

Tahir Ghani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11031487
    Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes first and second gate dielectric layers over a fin. First and second gate electrodes are over the first and second gate dielectric layers, respectively, the first and second gate electrodes both having an insulating cap having a top surface. First dielectric spacer are adjacent the first side of the first gate electrode. A trench contact structure is over a semiconductor source or drain region adjacent first and second dielectric spacers, the trench contact structure comprising an insulating cap on a conductive structure, the insulating cap of the trench contact structure having a top surface substantially co-planar with the insulating caps of the first and second gate electrodes.
    Type: Grant
    Filed: December 3, 2019
    Date of Patent: June 8, 2021
    Assignee: Intel Corporation
    Inventors: Andrew W. Yeoh, Tahir Ghani, Atul Madhavan, Michael L. Hattendorf, Christopher P. Auth
  • Publication number: 20210167210
    Abstract: Fin smoothing, and integrated circuit structures resulting therefrom, are described. For example, an integrated circuit structure includes a semiconductor fin having a protruding fin portion above an isolation structure, the protruding fin portion having substantially vertical sidewalls. The semiconductor fin further includes a sub-fin portion within an opening in the isolation structure, the sub-fin portion having a different semiconductor material than the protruding fin portion. The sub-fin portion has a width greater than or less than a width of the protruding portion where the sub-fin portion meets the protruding portion. A gate stack is over and conformal with the protruding fin portion of the semiconductor fin. A first source or drain region at a first side of the gate stack, and a second source or drain region at a second side of the gate stack opposite the first side of the gate stack.
    Type: Application
    Filed: December 2, 2019
    Publication date: June 3, 2021
    Inventors: Cory BOMBERGER, Anand S. MURTHY, Tahir GHANI, Anupama BOWONDER
  • Patent number: 11024713
    Abstract: An apparatus is provided which comprises: a semiconductor region on a substrate, a gate stack on the semiconductor region, a source region of doped semiconductor material on the substrate adjacent a first side of the semiconductor region, a drain region of doped semiconductor material on the substrate adjacent a second side of the semiconductor region, and a transition region in the drain region, adjacent the semiconductor region, wherein the transition region comprises varying dopant concentrations that increase in a direction away from the semiconductor region. Other embodiments are also disclosed and claimed.
    Type: Grant
    Filed: December 31, 2016
    Date of Patent: June 1, 2021
    Assignee: Intel Corporation
    Inventors: Seung Hoon Sung, Dipanjan Basu, Glenn A. Glass, Harold W. Kennel, Ashish Agrawal, Benjamin Chu-Kung, Anand S. Murthy, Jack T. Kavalieros, Tahir Ghani
  • Publication number: 20210159229
    Abstract: Described herein are IC devices that include semiconductor nanoribbons stacked over one another to realize high-density three-dimensional (3D) dynamic random-access memory (DRAM). An example device includes a first semiconductor nanoribbon, a second semiconductor nanoribbon, a first source or drain (S/D) region and a second S/D region in each of the first and second nanoribbons, a first gate stack at least partially surrounding a portion of the first nanoribbon between the first and second S/D regions in the first nanoribbon, and a second gate stack, not electrically coupled to the first gate stack, at least partially surrounding a portion of the second nanoribbon between the first and second S/D regions in the second nanoribbon. The device further includes a bitline coupled to the first S/D regions of both the first and second nanoribbons.
    Type: Application
    Filed: November 21, 2019
    Publication date: May 27, 2021
    Applicant: Intel Corporation
    Inventors: Wilfred Gomes, Kinyip Phoa, Mauro J. Kobrinsky, Tahir Ghani, Uygar E. Avci, Rajesh Kumar
  • Publication number: 20210159339
    Abstract: Embodiments of the present invention describe a epitaxial region on a semiconductor device. In one embodiment, the epitaxial region is deposited onto a substrate via cyclical deposition-etch process. Cavities created underneath the spacer during the cyclical deposition-etch process are backfilled by an epitaxial cap layer. The epitaxial region and epitaxial cap layer improves electron mobility at the channel region, reduces short channel effects and decreases parasitic resistance.
    Type: Application
    Filed: January 28, 2021
    Publication date: May 27, 2021
    Inventors: Anand S. MURTHY, Daniel Bourne AUBERTINE, Tahir GHANI, Abhijit Jayant PETHE
  • Patent number: 11018264
    Abstract: Described herein are three-dimensional nanoribbon-based logic ICs that include one of more of 1) individual gate control in a vertical stack of nanoribbons, 2) inter-ribbon interconnects in a vertical stack of nanoribbons, and 3) both P- and N-type nanoribbons in a vertical stack of nanoribbons. Using one or more of these features may help realize unique monolithic 3D logic architectures that were not possible with conventional logic circuits and may allow realizing logic devices with favorable metrics in terms of power and performance while preserving the substrate area and cost.
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: May 25, 2021
    Assignee: Intel Corporation
    Inventors: Wilfred Gomes, Kinyip Phoa, Tahir Ghani, Rajesh Kumar
  • Publication number: 20210151438
    Abstract: A three-dimensional memory array may include a first memory array and a second memory array, stacked above the first. Some memory cells of the first array may be coupled to a first layer selector transistor, while some memory cells of the second array may be coupled to a second layer selector transistor. The first and second layer selector transistor may be coupled to one another and to a peripheral circuit that controls operation of the first and/or second memory arrays. A different layer selector transistor may be used for each row of memory cells of a given memory array and/or for each column of memory cells of a given memory array. Such designs may allow increasing density of memory cells in a memory array having a given footprint area, or, conversely, reducing the footprint area of the memory array with a given memory cell density.
    Type: Application
    Filed: November 20, 2019
    Publication date: May 20, 2021
    Applicant: Intel Corporation
    Inventors: Wilfred Gomes, Mauro J. Kobrinsky, Abhishek A. Sharma, Rajesh Kumar, Kinyip Phoa, Elliot Tan, Tahir Ghani, Swaminathan Sivakumar
  • Patent number: 11011550
    Abstract: Non-planar thin film transistors (TFTs) incorporating an oxide semiconductor for the channel material. Memory devices may include an array of one thin film transistor and one capacitor (1TFT-1C) memory cells. Methods for fabricating non-planar thin film transistors may include a sacrificial gate/top-gate replacement technique with self-alignment of source/drain contacts.
    Type: Grant
    Filed: December 28, 2016
    Date of Patent: May 18, 2021
    Assignee: Intel Corporation
    Inventors: Van Le, Abhishek Sharma, Gilbert Dewey, Ravi Pillarisetty, Shriram Shivaraman, Tahir Ghani, Jack Kavalieros
  • Publication number: 20210143051
    Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a fin comprising silicon, the fin having a lower fin portion and an upper fin portion. A first insulating layer is directly on sidewalls of the lower fin portion of the fin, wherein the first insulating layer is a non-doped insulating layer comprising silicon and oxygen. A second insulating layer is directly on the first insulating layer directly on the sidewalls of the lower fin portion of the fin, the second insulating layer comprising silicon and nitrogen. A dielectric fill material is directly laterally adjacent to the second insulating layer directly on the first insulating layer directly on the sidewalls of the lower fin portion of the fin.
    Type: Application
    Filed: January 15, 2021
    Publication date: May 13, 2021
    Inventors: Michael L. HATTENDORF, Curtis WARD, Heidi M. MEYER, Tahir GHANI, Christopher P. AUTH
  • Patent number: 11004982
    Abstract: Substrates, assemblies, and techniques for an apparatus, where the apparatus includes a gate, where the gate includes a first gate side and a second gate side opposite to the first gate side, a gate dielectric on the gate, where the gate dielectric includes a first gate dielectric side and a second gate dielectric side opposite to the first gate dielectric side, a first dielectric, where the first dielectric abuts the first gate side, the first gate dielectric side, the second gate side, and the second gate dielectric side, a channel, where the gate dielectric is between the channel and the gate, a source coupled with the channel, and a drain coupled with the channel, where the first dielectric abuts the source and the drain. In an example, the first dielectric and the gate dielectric help insulate the gate from the channel, the source, and the drain.
    Type: Grant
    Filed: March 31, 2017
    Date of Patent: May 11, 2021
    Assignee: Intel Corporation
    Inventors: Van H. Le, Abhishek A. Sharma, Ravi Pillarisetty, Gilbert W. Dewey, Shriram Shivaraman, Tristan A. Tronic, Sanaz Gardner, Tahir Ghani
  • Patent number: 11004954
    Abstract: Integrated circuit transistor structures are disclosed that include a single crystal buffer structure that is lattice matched to the underlying single crystal silicon substrate. The buffer structure may be used to reduce sub-fin leakage in non-planar transistors, but can also be used in planar configurations. In some embodiments, the buffer structure is a single continuous layer of high bandgap dielectric material that is lattice matched to silicon. The techniques below can be utilized on NMOS and PMOS transistors, including any number of group IV and III-V semiconductor channel materials.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: May 11, 2021
    Assignee: Intel Corporation
    Inventors: Karthik Jambunathan, Glenn A. Glass, Anand S. Murthy, Jack T. Kavalieros, Seung Hoon Sung, Benjamin Chu-Kung, Tahir Ghani
  • Patent number: 11004739
    Abstract: Gate contact structures disposed over active portions of gates and methods of forming such gate contact structures are described. For example, a semiconductor structure includes a substrate having an active region and an isolation region. A gate structure has a portion disposed above the active region and a portion disposed above the isolation region of the substrate. Source and drain regions are disposed in the active region of the substrate, on either side of the portion of the gate structure disposed above the active region. A gate contact structure is disposed on the portion of the gate structure disposed above the active region of the substrate.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: May 11, 2021
    Assignee: Intel Corporation
    Inventors: Abhijit Jayant Pethe, Tahir Ghani, Mark Bohr, Clair Webb, Harry Gomez, Annalisa Cappellani
  • Publication number: 20210134802
    Abstract: Described herein are IC devices that include transistors with contacts to one of the source/drain (S/D) regions being on the front side of the transistors and contacts to the other one of the S/D regions being on the back side of the transistors (i.e., “back-side contacts”). Using transistors with one front-side and one back-side S/D contacts provides advantages and enables unique architectures that were not possible with conventional front-end-of-line transistors with both S/D contacts being on one side.
    Type: Application
    Filed: October 31, 2019
    Publication date: May 6, 2021
    Applicant: Intel Corporation
    Inventors: Wilfred Gomes, Mauro J. Kobrinsky, Abhishek A. Sharma, Tahir Ghani, Doug Ingerly, Rajesh Kumar
  • Publication number: 20210134673
    Abstract: A transistor comprises a substrate, a pair of spacers on the substrate, a gate dielectric layer on the substrate and between the pair of spacers, a gate electrode layer on the gate dielectric layer and between the pair of spacers, an insulating cap layer on the gate electrode layer and between the pair of spacers, and a pair of diffusion regions adjacent to the pair of spacers. The insulating cap layer forms an etch stop structure that is self aligned to the gate and prevents the contact etch from exposing the gate electrode, thereby preventing a short between the gate and contact. The insulator-cap layer enables self-aligned contacts, allowing initial patterning of wider contacts that are more robust to patterning limitations.
    Type: Application
    Filed: January 12, 2021
    Publication date: May 6, 2021
    Inventors: Mark T. BOHR, Tahir GHANI, Nadia M. RAHHAL-ORABI, Subhash M. JOSHI, Joseph M. STEIGERWALD, Jason W. KLAUS, Jack HWANG, Ryan MACKIEWICZ
  • Publication number: 20210125990
    Abstract: Described herein are IC devices that include TFT based memory arrays on both sides of a layer of logic devices. An example IC device includes a support structure (e.g., a substrate) on which one or more logic devices may be implemented. The IC device further includes a first memory cell on one side of the support structure, and a second memory cell on the other side of the support structure, where each of the first memory cell and the second memory cell includes a TFT as an access transistor. Providing TFT based memory cells on both sides of a layer of logic devices allows significantly increasing density of memory cells in a memory array having a given footprint area, or, conversely, significantly reducing the footprint area of the memory array with a given memory cell density.
    Type: Application
    Filed: October 29, 2019
    Publication date: April 29, 2021
    Applicant: Intel Corporation
    Inventors: Wilfred Gomes, Mauro J. Kobrinsky, Conor P. Puls, Kevin Fischer, Bernhard Sell, Abhishek A. Sharma, Tahir Ghani
  • Publication number: 20210125992
    Abstract: Embodiments herein describe techniques for a semiconductor device having an interconnect structure above a substrate. The interconnect structure may include an inter-level dielectric (ILD) layer and a separation layer above the ILD layer. A first conductor and a second conductor may be within the ILD layer. The first conductor may have a first physical configuration, and the second conductor may have a second physical configuration different from the first physical configuration. Other embodiments may be described and/or claimed.
    Type: Application
    Filed: December 22, 2017
    Publication date: April 29, 2021
    Inventors: Travis LAJOIE, Tahir GHANI, Jack T. KAVALIEROS, Shem O. OGADHOH, Yih WANG, Bernhard SELL, Allen GARDINER, Blake LIN, Juan G. ALZATE VINASCO, Pei-Hua WANG, Chieh-Jen KU, Abhishek A. SHARMA
  • Publication number: 20210125866
    Abstract: Gate aligned contacts and methods of forming gate aligned contacts are described. For example, a method of fabricating a semiconductor structure includes forming a plurality of gate structures above an active region formed above a substrate. The gate structures each include a gate dielectric layer, a gate electrode, and sidewall spacers. A plurality of contact plugs is formed, each contact plug formed directly between the sidewall spacers of two adjacent gate structures of the plurality of gate structures. A plurality of contacts is formed, each contact formed directly between the sidewall spacers of two adjacent gate structures of the plurality of gate structures. The plurality of contacts and the plurality of gate structures are formed subsequent to forming the plurality of contact plugs.
    Type: Application
    Filed: January 4, 2021
    Publication date: April 29, 2021
    Inventors: Oleg GOLONZKA, Swaminathan SIVAKUMAR, Charles H. WALLACE, Tahir GHANI
  • Patent number: 10985267
    Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, a method includes forming a plurality of fins, individual ones of the plurality of fins along a first direction. A plurality of gate structures is formed over the plurality of fins, individual ones of the gate structures along a second direction orthogonal to the first direction. A dielectric material structure is formed between adjacent ones of the plurality of gate structures. A portion of one of the plurality of gate structures is removed to expose a portion of each of the plurality of fins. The exposed portion of each of the plurality of fins is removed. An insulating layer is formed in locations of the removed portion of each of the plurality of fins.
    Type: Grant
    Filed: June 19, 2020
    Date of Patent: April 20, 2021
    Assignee: Intel Corporation
    Inventors: Tahir Ghani, Byron Ho, Michael L. Hattendorf, Christopher P. Auth
  • Patent number: 10985184
    Abstract: Embodiments of the present disclosure relate to non-planar semiconductor device structures having fins. In one embodiment, a semiconductor device includes a substrate, silicon fins positioned on the substrate, and a germanium layer that is epitaxially grown on an upper region of the silicon fins with the silicon fins and the germanium layer forming a body of the semiconductor device.
    Type: Grant
    Filed: March 27, 2017
    Date of Patent: April 20, 2021
    Assignee: Intel Corporation
    Inventors: Martin D. Giles, Tahir Ghani
  • Patent number: 10985263
    Abstract: An apparatus is provided which comprises: a semiconductor region on a substrate, a gate stack on the semiconductor region, a source region of doped semiconductor material on the substrate adjacent a first side of the semiconductor region, a cap region on the substrate adjacent a second side of the semiconductor region, wherein the cap region comprises semiconductor material of a higher band gap than the semiconductor region, and a drain region comprising doped semiconductor material on the cap region. Other embodiments are also disclosed and claimed.
    Type: Grant
    Filed: December 31, 2016
    Date of Patent: April 20, 2021
    Assignee: Intel Corporation
    Inventors: Seung Hoon Sung, Dipanjan Basu, Ashish Agrawal, Van H. Le, Benjamin Chu-Kung, Harold W. Kennel, Glenn A. Glass, Anand S. Murthy, Jack T. Kavalieros, Tahir Ghani