Abstract: Stacked static random-access memory (SRAM) circuits have doubled word length for a given SRAM cell area. An integrated circuit (IC) die includes stacked SRAM cells in vertically adjacent device layers with access transistors connected to a common wordline. The IC die with stacked SRAM cells having a common word line may be attached to a substrate and coupled to a power supply and, advantageously, to an active-cooling structure. SRAM cells may be formed in vertically adjacent layers of a substrate and electrically connected at their access transistor gate electrodes.

Abstract: Techniques and mechanisms for providing an integrated circuit (IC) which comprises an interconnect that extends between channel structures of two transistors. In an embodiment, a separation layer is provided between a first stack of channel structures and a second stack of channel structures, wherein an interior region of the separation layer comprises a sacrificial material which spans on overlap region between the stacks. Fabrication processes form a hole which exposes the interior region, and etching is performed to remove the sacrificial material from the separation layer. Subsequently, deposition processing forms in the interior region a trace portion of the interconnect. In another embodiment, the interconnect comprises a contiguous body of a conductor material, wherein the contiguous body extends to form respective regions of the trace portion, and a via portion of the interconnect.

Abstract: Integrated circuit dies, systems, and techniques are described herein related to one transistor-one capacitor dynamic random access memory. A memory device includes vertically aligned transistors having annular semiconductor structures and a shared bit line extending through the annular semiconductor structures, and vertically aligned capacitors having annular first capacitor plates, annular capacitor dielectric structures, and a shared second capacitor plate extending through the annular first capacitor plates, such that the annular first capacitor plates are in contact with corresponding ones of the annular semiconductor structures.

Abstract: Gate-all-around integrated circuit structures having asymmetric source and drain contact structures, and methods of fabricating gate-all-around integrated circuit structures having asymmetric source and drain contact structures, are described. For example, an integrated circuit structure includes a vertical arrangement of nanowires above a fin. A gate stack is over the vertical arrangement of nanowires. A first epitaxial source or drain structure is at a first end of the vertical arrangement of nanowires. A second epitaxial source or drain structure is at a second end of the vertical arrangement of nanowires. A first conductive contact structure is coupled to the first epitaxial source or drain structure. A second conductive contact structure is coupled to the second epitaxial source or drain structure. The second conductive contact structure is deeper along the fin than the first conductive contact structure.

Abstract: Integrated circuit dies, systems, and techniques are described herein related to three-dimensional dynamic random access memory. A memory device includes vertically aligned semiconductor structures coupled to independent gate structures, corresponding vertically aligned capacitors each coupled to a corresponding one of the semiconductor structures, and a bit line contact extending vertically across a depth of the semiconductor structures and coupled to each of the semiconductor structures.

Abstract: Techniques and mechanisms for providing epitaxial structures of an integrated circuit (IC). In an embodiment, an IC comprises a separation layer, and first and second channel stack structures at opposite surfaces of the separation layer. A first source or drain (SD) structure extends to the first channel stack structure, and a second SD structure extends to the second channel stack structure. A hole extends through the separation layer, wherein the first and second SD structures are formed concurrently by a deposition of an epitaxial (epi) material from one side of the hole. An insulator material of the separation layer facilitates separation of the first and second SD structures from each other during the epi deposition. In another embodiment, respective crystal orientations in the first and second SD structures each face the same direction along a vertical dimension which is orthogonal to the surfaces of the separation layer.

Abstract: Disclosed herein are dual gate trench shaped thin film transistors and related methods and devices. Exemplary thin film transistor structures include a non-planar semiconductor material layer having a first portion extending laterally over a first gate dielectric layer, which is over a first gate electrode structure, and a second portion extending along a trench over the first gate dielectric layer, a second gate electrode structure at least partially within the trench, and a second gate dielectric layer between the second gate electrode structure and the first portion.

Abstract: Neighboring gate-all-around integrated circuit structures having disjoined epitaxial source or drain regions, and methods of fabricating neighboring gate-all-around integrated circuit structures having disjoined epitaxial source or drain regions, are described. For example, a structure includes first and second vertical arrangements of nanowires, the nanowires of the second vertical arrangement of nanowires having a horizontal width greater than a horizontal width of the nanowires of the first vertical arrangement of nanowires. First and second gate stacks are over the first and second vertical arrangements of nanowires, respectively. First epitaxial source or drain structures are at ends of the first vertical arrangement of nanowires, and second epitaxial source or drain structures are at ends of the second vertical arrangement of nanowires. An intervening dielectric structure is between neighboring ones of the first epitaxial source or drain structures and of the second epitaxial source or drain structures.

Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, a method includes forming a plurality of fins and forming a plurality of gate structures over the plurality of fins. A dielectric material structure is formed between adjacent ones of the plurality of gate structures. A portion of a first of the plurality of gate structures is removed to expose a first portion of each of the plurality of fins, and a portion of a second of the plurality of gate structures is removed to expose a second portion of each of the plurality of fins. The exposed first portion of each of the plurality of fins is removed, but the exposed second portion of each of the plurality of fins is not removed.

Abstract: IC devices with angled transistors and angled routing tracks, and related assemblies and methods, are disclosed herein. A transistor is referred to as an “angled transistor” if a longitudinal axis of an elongated semiconductor structure of the transistor (e.g., a fin or a nanoribbon) is neither perpendicular nor parallel to any edges of front or back sides of a support structure (e.g., a die) over which the transistor is implemented. Similarly, a routing track is referred to as an “angled routing track” if the routing track is neither perpendicular nor parallel to any edges of front or back faces of the support structure. Angled transistors and angled routing tracks provide a promising way to increasing densities of transistors on the limited real estate of semiconductor chips and/or decreasing adverse effects associated with continuous scaling of IC components.

Abstract: Embodiments of an integrated circuit (IC) die comprise: a first region having a first surface and a second surface, the first surface being orthogonal to the second surface; and a second region attached to the first region along a planar interface that is orthogonal to the first surface and parallel to the second surface, the second region having a third surface coplanar with the first surface. The first region comprises: a dielectric material; layers of conductive traces in the dielectric material, each layer of the conductive traces being parallel to the second surface such that the conductive traces are orthogonal to the first surface; conductive vias through the dielectric material; and bond-pads on the first surface, the bond-pads comprising portions of the conductive traces exposed on the first surface, and the second region comprises a material different from the dielectric material.

Abstract: Integrated circuit structures having recessed self-aligned deep boundary vias are described. For example, an integrated circuit structure includes a plurality of gate lines. A plurality of trench contacts extends over a plurality of source or drain structures, individual ones of the plurality of trench contacts alternating with individual ones of the plurality of gate lines. A backside metal routing layer is extending beneath one or more of the plurality of gate lines and beneath one or more of the plurality of trench contacts. A conductive structure couples the backside metal routing layer to one of the one or more of the plurality of trench contacts. The conductive structure includes a pillar portion in contact with the one of the one or more of the plurality of trench contacts, the pillar portion on a line portion, the line portion in contact with and extending along the backside metal routing layer.

Abstract: Structures having AOI gates with routing across nanowires are described. In an example, an integrated circuit structure includes a stack of horizontal nanowires along a vertical direction. A gate stack is over the stack of horizontal nanowires and is surrounding a channel region of each of the horizontal nanowires, the gate stack having one or more cuts in the vertical direction.

Abstract: Structures having memory with backside DRAM and power delivery are described. In an example, an integrated circuit structure includes a front-side structure including a device layer having a plurality of nanowire-based transistors, and a plurality of metallization layers above the nanowire-based transistors of the device layer. A backside structure is below the nanowire-based transistors of the device layer. The backside structure includes a plurality of dynamic random access memory (DRAM) devices.

Abstract: Integrated circuit structures having backside power staple are described. In an example, an integrated circuit structure includes a plurality of gate lines. A plurality of trench contacts is extending over a plurality of source or drain structures, individual ones of the plurality of trench contacts alternating with individual ones of the plurality of gate lines. A front-side metal routing layer is extending over one or more of the plurality of gate lines, and over and coupled to one or more of the plurality of trench contacts. A backside metal routing layer is extending beneath the one or more of the plurality of gate lines and the one or more of the plurality of trench contacts, the backside metal routing layer parallel and overlapping with the front-side metal routing layer. A conductive feedthrough structure couples the backside metal routing layer to the front-side metal routing layer.

Abstract: IC devices with logic circuits using vertical transistors with backside source or drain (S/D) regions, and related assemblies and methods, are disclosed herein. An example vertical transistor includes an elongated structure (e.g., a nanoribbon) of one or more semiconductor materials extending between a first side (e.g., a back side) and an opposing second side (e.g., a front side) of a substrate. The first S/D region of the transistor may be provided at the first side of the substrate, while the second S/D region of the transistor may be provided at the second side, with the channel region of the transistor being the portion of the elongated structure between the first and second S/D regions. Implementing various logic circuits using vertical transistors with backside S/D regions may provide a promising way to increasing densities of transistors on the limited real estate of semiconductor chips and/or decreasing short-channel effects associated with continuous scaling of IC components.

Abstract: Embodiments of an integrated circuit (IC) die comprise: a metallization stack including a dielectric material, a plurality of layers of conductive traces in the dielectric material and conductive vias through the dielectric material; and a substrate attached to the metallization stack along a planar interface. The metallization stack comprises bond-pads on a first surface, a second surface, a third surface, a fourth surface, and a fifth surface. The first surface is parallel to the planar interface between the metallization stack and the substrate, the second surface is parallel to the third surface and orthogonal to the first surface, and the fourth surface is parallel to the fifth surface and orthogonal to the first surface and the second surface.

Abstract: Embodiments of an integrated circuit (IC) die comprise a first region having a first surface and a second surface, the first surface being orthogonal to the second surface; a second region comprising a semiconductor material, the second region attached to the first region along a first planar interface that is orthogonal to the first surface and parallel to the second surface; and a third region comprising optical structures of a photonic IC, the third region attached to the second region along a second planar interface that is parallel to the first planar interface. The first region comprises: a plurality of layers of conductive traces in a dielectric material, each layer of the conductive traces being parallel to the second surface such that the conductive traces are orthogonal to the first surface; and bond-pads on the first surface, the bond-pads comprising portions of respective conductive traces exposed on the first surface.

Abstract: Embodiments of an integrated circuit (IC) die comprise: a first IC die coupled to at least two second IC dies by interconnects on a first surface of the first IC die and second surfaces of the second IC dies such that the first surface is in contact with the second surfaces. The second surfaces are coplanar, the interconnects comprise dielectric-dielectric bonds and metal-metal bonds, the metal-metal bonds include first bond-pads in the first IC die and second bond-pads in the second IC dies, the first IC die comprises a substrate attached to a metallization stack along a planar interface that is orthogonal to the first surface, the metallization stack comprises a plurality of layers of conductive traces in a dielectric material, and the first bond-pads comprise portions of the conductive traces exposed on the first surface.

Abstract: Embodiments of an integrated circuit (IC) die comprise: a first region having a first surface; a second region attached to the first region along a first planar interface that is orthogonal to the first surface; and a third region attached to the second region along a second planar interface that is parallel to the first planar interface, the third region having a second surface, the second surface being coplanar with the first surface. The first region and the third region comprise a plurality of layers of conductive traces in a dielectric material, the conductive traces being orthogonal to the first and second surfaces; and bond-pads on the first and second surfaces, the bond-pads comprising portions of the respective conductive traces exposed on the first and second surfaces.