Abstract: A method is provided for forming a trench isolation structure in an integrated circuit that has a better reliability and an acceptable time-dependent dielectric breakdown over a greater range of production. The manufacturing method involves etching a trench in a semiconductor substrate, forming a sidewall-insulating layer along the sidewall and bottom of the trench, and depositing a trench-insulating layer in the trench and over the semiconductor substrate. The sidewall-insulating layer is formed to have a lower etch rate than the trench-insulating layer. As a result of this difference in etch rates, the sidewall-insulating layer is not damaged too much during wet etching processes that take place during the later part of manufacture. This makes the interface between the substrate, sidewall-insulating layer, and gate oxide more reliable.

Abstract: A method for forming a trench isolation in a semiconductor device is provided in which a first heat treatment process is conducted on a thermal oxide layer previously formed in a trench at temperature range from about 1000.degree. C. to 1200.degree. C. for about 1 to 8 hours so as to remove defects in a semiconductor substrate and oxygen impurities within the semiconductor substrate resulting from a step of forming the trench in the semiconductor substrate. As a result, a subsequent second heat treatment process for densifying a trench filling material such as a CVD oxide layer can be performed at lower temperature of about 1000.degree. C. to 1050.degree. C., as compared with the temperature of the first annealing of the thermal oxide layer, thereby reducing distortions of the semiconductor substrate and reducing current leakages.

Abstract: There are disclosed an opening filling apparatus and a method for manufacturing a semiconductor device by using the same. An opening of a semiconductor device is filled by using the filling apparatus comprising: a chamber having a rotation shaft, a motor, a plurality of plates arranged in a circular form centering at the rotation shaft, and a heater; and injectors for injecting gas. When the opening of a semiconductor device such as a trench or a contact hole is filled, filling material may move down by using the centrifugal force generated by rotating the substrate, to thereby fill the opening completely without a void.

Abstract: Trench isolation methods for integrated circuit substrates may be simplified by eliminating the steps of forming a silicon nitride layer, etching the silicon nitride layer and removing the silicon nitride layer. In particular, a silicon nitride-free mask pattern, such as a photoresist mask pattern, may be formed on a silicon nitride-free integrated circuit substrate. The silicon nitride-free integrated circuit substrate is etched through the silicon nitride-free mask pattern to form a trench in the substrate. An insulating layer is formed in the trench and is chemical-mechanical polished to form a trench isolating layer. By eliminating the silicon nitride layer, simplified processing and improved performance may be obtained.

Abstract: A method for forming a microelectronic structure includes the steps of forming a trench in a substrate and forming an insulating layer which fills the trench and covers the substrate. Ions can be implanted into the insulating layer which decrease an etch rate of the insulating layer, and portions of the insulating layer on the substrate can be removed while maintaining the insulating layer in the trench. In addition, the step of forming the insulating layer can include forming an undoped oxide layer on the substrate and forming a doped oxide layer on the undoped oxide layer wherein a void is formed in the doped oxide layer. The void can thus be reduced by reflowing the doped oxide layer.

Abstract: A method for forming a microelectronic structure includes the steps of forming a mask layer on a substrate, forming a trench in the exposed portion of the substrate, forming a layer of an insulating material which fills the trench and covers the mask layer, and annealing the insulating material at a temperature of at least about 1,150.degree. C. The annealing step can be performed for a period of time of about .5 hours to about 8 hours, and the annealing step can be performed in an inert atmosphere.

Abstract: Methods of forming electrical isolation regions in semiconductor substrates include the steps of forming a first electrical isolation region at a face of a semiconductor substrate, then forming a trench in the semiconductor substrate, laterally adjacent the first electrical isolation region, and then forming a trench isolation region in the trench so that the trench isolation region is contiguous with the first isolation region. In particular, these methods include the steps of forming a pad insulating layer on the face of a semiconductor substrate and then forming a first nitride layer on the pad insulating layer. The first nitride layer is then patterned by removing a portion thereof to define an opening extending opposite an inactive region within the semiconductor substrate. A second nitride layer is then formed on the patterned first nitride layer and in the opening.

Abstract: There are disclosed an opening filling apparatus and a method for manufacturing a semiconductor device by using the same. An opening of a semiconductor device is filled by using the filling apparatus comprising: a chamber having a rotation shaft, a motor, a plurality of plates arranged in a circular form centering at the rotation shaft, and a heater; and means for injecting gas. When the opening of a semiconductor device such as a trench or a contact hole is filled, filling material may move down by using the centrifugal force generated by rotating the substrate, to thereby fill the opening completely without a void.

Abstract: An improved method for performing a local oxidation of silicon (LOCOS) capable of forming a sufficient thickness of a field oxide film even in narrow isolation regions. After defining the isolation region, a first field oxide film is formed in the isolation region by means of a first field oxidation. A film formed of HTO, LTO or SOG, or a pre-oxide film formed of polysilicon is formed on the resultant product. Then, the film, oxide film or the pre-oxide film is removed by anisotropically etching with a dry etching process or a chemical mechanical process so as to be left only in the isolation region, which after a second field oxidation forms a second field oxide film.