Patents by Inventor Taiqing Qiu
Taiqing Qiu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170222072Abstract: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.Type: ApplicationFiled: April 20, 2017Publication date: August 3, 2017Inventors: Seung Bum Rim, David D. Smith, Taiqing Qiu, Staffan Westerberg, Kieran Mark Tracy, Venkatasubramani Balu
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Publication number: 20170149383Abstract: Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.Type: ApplicationFiled: February 6, 2017Publication date: May 25, 2017Inventors: Xiuwen Tu, David Aitan Soltz, Michael C. Johnson, Seung Bum Rim, Taiqing Qiu, Yu-Chen Shen, Kieran Mark Tracy
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Publication number: 20170141255Abstract: Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.Type: ApplicationFiled: January 30, 2017Publication date: May 18, 2017Inventors: Taiqing Qiu, Gilles Olav Tanguy Sylvain Poulain, Perine Jaffrennou, Nada Habka, Sergej Filonovich
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Patent number: 9634177Abstract: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.Type: GrantFiled: October 21, 2015Date of Patent: April 25, 2017Assignee: SunPower CorporationInventors: Seung Bum Rim, David D. Smith, Taiqing Qiu, Staffan Westerberg, Kieran Mark Tracy, Venkatasubramani Balu
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Patent number: 9564854Abstract: Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.Type: GrantFiled: May 6, 2015Date of Patent: February 7, 2017Assignee: SunPower CorporationInventors: Xiuwen Tu, David Aitan Soltz, Michael C. Johnson, Seung Bum Rim, Taiqing Qiu, Yu-Chen Shen, Kieran Mark Tracy
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Patent number: 9559245Abstract: Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.Type: GrantFiled: June 23, 2015Date of Patent: January 31, 2017Assignees: SunPower Corporation, Total Marketing ServicesInventors: Taiqing Qiu, Gilles Olav Tanguy Sylvain Poulain, Périne Jaffrennou, Nada Habka, Sergej Filonovich
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Publication number: 20160329864Abstract: Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.Type: ApplicationFiled: May 6, 2015Publication date: November 10, 2016Inventors: Xiuwen Tu, David Aitan Soltz, Michael C. Johnson, Seung Bum Rim, Taiqing Qiu, Yu-Chen Shen, Kieran Mark Tracy
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Publication number: 20160284923Abstract: Methods of fabricating solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a thin dielectric layer on a surface of a substrate by radical oxidation or plasma oxidation of the surface of the substrate. The method also involves forming a silicon layer over the thin dielectric layer. The method also involves forming a plurality of emitter regions from the silicon layer.Type: ApplicationFiled: September 25, 2015Publication date: September 29, 2016Inventors: Michael C. Johnson, Taiqing Qiu, David D. Smith, Peter John Cousins, Staffan Westerberg
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Publication number: 20160284922Abstract: Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.Type: ApplicationFiled: June 23, 2015Publication date: September 29, 2016Inventors: Taiqing Qiu, Gilles Olav Tanguy Sylvain Poulain, Périne Jaffrennou, Nada Habka, Sergej Filonovich
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Publication number: 20160177439Abstract: Sputter tools are described. In one embodiment, an apparatus to support a wafer includes a pallet having a depression to receive the wafer. The pallet includes an opening below the depression, and an edge in the depression is to support the wafer over the opening. A cover at least partially covers the opening. In one example, the cover may be a plate with one or more holes, and a pipe may be located below each of the holes in the cover. In one embodiment, a wafer-processing system includes a processing chamber and a pallet with a depression to receive a wafer. The pallet has an opening below the depression, and an edge in the depression supports the wafer over the opening. In one such embodiment, a cover at least partially covers the opening. According to one embodiment, an energy-absorbing material is disposed below the opening in the pallet.Type: ApplicationFiled: December 19, 2014Publication date: June 23, 2016Inventors: Yu-Chen Shen, Taiqing Qiu, Robe Woehl, Kieran Mark Tracy, Mukul Agrawal
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Publication number: 20160043267Abstract: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.Type: ApplicationFiled: October 21, 2015Publication date: February 11, 2016Inventors: Seung Bum Rim, David D. Smith, Taiqing Qiu, Staffan Westerberg, Kieran Mark Tracy, Venkatasubramani Balu
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Patent number: 9196758Abstract: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.Type: GrantFiled: December 20, 2013Date of Patent: November 24, 2015Assignee: SunPower CorporationInventors: Seung Bum Rim, David D. Smith, Taiqing Qiu, Staffan Westerberg, Kieran Mark Tracy, Venkatasubramani Balu
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Publication number: 20150179838Abstract: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.Type: ApplicationFiled: December 20, 2013Publication date: June 25, 2015Applicant: SunPower CorporationInventors: Seung Bum Rim, David D. Smith, Taiqing Qiu, Staffan Westerberg, Kieran Mark Tracy, Balu Venkatasubramani
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Publication number: 20080038486Abstract: A process for radical assisted film deposition simultaneously on multiple wafer substrates is provided. The multiple wafer substrates are loaded into a reactor that is heated to a desired film deposition temperature. A stable species source of oxide or nitride counter ion is introduced into the reactor. An in situ radical generating reactant is also introduced into the reactor along with a cationic ion deposition source. The cationic ion deposition source is introduced for a time sufficient to deposit a cationic ion-oxide or a cationic ion-nitride film simultaneously on multiple wafer substrates. Deposition temperature is below a conventional chemical vapor deposition temperature absent the in situ radical generating reactant.Type: ApplicationFiled: August 2, 2007Publication date: February 14, 2008Inventors: Helmuth Treichel, Taiqing Qiu, Robert Jeffrey Bailey
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Publication number: 20070010072Abstract: A batch of wafer substrates is provided with each wafer substrate having a surface. Each surface is coated with a layer of material applied simultaneously to the surface of each of the batch of wafer substrates. The layer of material is applied to a thickness that varies less than four thickness percent across the surface and exclusive of an edge boundary and having a wafer-to-wafer thickness variation of less than three percent. The layer of material so applied is a silicon oxide, silicon nitride or silicon oxynitride with the layer of material being devoid of carbon and chlorine. Formation of silicon oxide or a silicon oxynitride requires the inclusion of a co-reactant. Silicon nitride is also formed with the inclusion of a nitrification co-reactant.Type: ApplicationFiled: July 7, 2006Publication date: January 11, 2007Applicant: Aviza Technology, Inc.Inventors: Robert Bailey, Taiqing Qiu, Cole Porter, Olivier Laparra, Robert Chatham, Martin Mogaard, Helmuth Treichel
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Patent number: 6900413Abstract: An apparatus for heat treatment of a wafer is disclosed. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.Type: GrantFiled: September 30, 2002Date of Patent: May 31, 2005Assignee: Aviza Technology, Inc.Inventors: Christopher T. Ratliff, Jeffrey M. Kowalski, Taiqing Qiu
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Patent number: 6844528Abstract: An apparatus for heat treatment of a wafer. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.Type: GrantFiled: September 30, 2002Date of Patent: January 18, 2005Assignee: Aviza Technology, Inc.Inventors: Christopher T. Ratliff, Jeffrey M. Kowalski, Taiqing Qiu
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Publication number: 20030089698Abstract: An apparatus for heat treatment of a wafer is disclosed. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.Type: ApplicationFiled: September 30, 2002Publication date: May 15, 2003Applicant: ASML US, Inc.Inventors: Christopher T. Ratliff, Jeffrey M. Kowalski, Taiqing Qiu
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Publication number: 20030024920Abstract: An apparatus for heat treatment of a wafer is disclosed. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.Type: ApplicationFiled: October 1, 2002Publication date: February 6, 2003Applicant: ASML US, Inc.Inventors: Christopher T. Ratliff, Jeffrey M. Kowalski, Taiqing Qiu
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Patent number: 6492621Abstract: An apparatus for heat treatment of a wafer is disclosed. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.Type: GrantFiled: August 21, 2001Date of Patent: December 10, 2002Assignee: ASML US, Inc.Inventors: Christopher Ratliff, Taiqing Qiu, Jeff Kowalski, Morteza Yadollahi, Saeed Sedehi