Abstract: A power generation cell includes a resin-framed electrolyte membrane electrode assembly. The cathode of the resin-framed membrane electrode assembly has a larger surface dimension than the anode. An outer peripheral portion of the anode is positioned between a first buffer and a fuel gas flow field. An outer peripheral portion of the cathode is positioned between the resin frame member and the second buffer.

Abstract: Provided are an ophthalmologic device and a method of controlling the same capable of accurately and reliably acquiring ocular characteristics of a subject eye. The ophthalmologic device includes: a face supporting unit configured to support a face of an examinee; an anterior ocular segment image acquiring unit configured to repeatedly acquire an anterior ocular segment image of the subject eye of the face supported by the face supporting unit; a pupil image detecting unit configured to detect a pupil image of the subject eye for each anterior ocular segment image based on the anterior ocular segment image repeatedly acquired by the anterior ocular segment image acquiring unit; and a determining unit configured to determine whether or not the face is properly supported by the face supporting unit based on a result of detection of the pupil image for each anterior ocular segment image by the pupil image detecting unit.

Abstract: A method for manufacturing a semiconductor device having a trench gate structure is provided. In the method, a first voltage-current characteristic indicating a relation between the main current and the gate voltage under a first temperature is measured to calculate a first threshold voltage. A second voltage-current characteristic indicating a relation between the main current and the gate voltage under a second temperature different from the first temperature is measured to calculate a second threshold voltage. It is determined whether the semiconductor device is a non-defective product or a defective product based on whether a difference between the second threshold voltage and the first threshold voltage is larger than a determination threshold value.

Abstract: A method for manufacturing a semiconductor device having a trench gate structure is provided. In the method, a first voltage-current characteristic indicating a relation between the main current and the gate voltage under a first temperature is measured to calculate a first threshold voltage. A second voltage-current characteristic indicating a relation between the main current and the gate voltage under a second temperature different from the first temperature is measured to calculate a second threshold voltage. It is determined whether the semiconductor device is a non-defective product or a defective product based on whether a difference between the second threshold voltage and the first threshold voltage is larger than a determination threshold value.

Abstract: A substrate cleaning method for removing particles adhered to a substrate includes: acquiring particle information including diameters of the particles adhered to the substrate; controlling, based on the acquired particle information, a factor related to sizes of gas clusters having aggregates of atoms or molecules of a cleaning gas; ejecting the cleaning gas, at a higher pressure than a processing atmosphere where the substrate is provided, to the processing atmosphere and generating the gas clusters by adiabatic expansion; and removing the particles by irradiating the gas clusters in a perpendicular direction to a surface of the substrate. As a result, even if recesses for a circuit pattern are formed on the surface of the substrate, the particles in the recesses can be removed at a high removal rate.

Abstract: A receiver includes a first detector that detects a Received Signal Strength Indicator of a desiring signal wave transmitted from a transmitter, a second detector that detects a power of interfering wave generated by an external device, a transmission rate selection processor that selects a transmission rate, which is used to transmit a signal from the transmitter to the receiver, from among a plurality of transmission rates based on the detected Received Signal Strength Indicator of the desiring signal wave and a detected power of the interfering wave, when the second detector detects generation of the interfering wave, and a transmission rate notificator that notifies the transmitter of the transmission rate selected by the transmission rate selection processor.

Abstract: A semiconductor device includes: a semiconductor substrate; a vertical type trench gate MOS transistor; a Schottky barrier diode; multiple trenches having a stripe pattern to divide an inner region into first and second separation regions; and a poly silicon film in each trench. The first separation region includes a first conductive type region for providing a source and a second conductive type layer for providing a channel region. The first conductive type region is adjacent to a first trench. The poly silicon film in the first trench is coupled with a gate wiring. A second trench is not adjacent to the first conductive type region. The poly silicon film in the second trench is coupled with a source or gate wiring. The substrate in the second separation region is coupled with the source wiring for providing a Schottky barrier.

Abstract: A receiver includes a first detector that detects a Received Signal Strength Indicator of a desiring signal wave transmitted from a transmitter, a second detector that detects a power of interfering wave generated by an external device, a transmission rate selection processor that selects a transmission rate, which is used to transmit a signal from the transmitter to the receiver, from among a plurality of transmission rates based on the detected Received Signal Strength Indicator of the desiring signal wave and a detected power of the interfering wave, when the second detector detects generation of the interfering wave, and a transmission rate notificator that notifies the transmitter of the transmission rate selected by the transmission rate selection processor.

Abstract: A substrate cleaning method for removing particles adhered to a substrate includes: acquiring particle information including diameters of the particles adhered to the substrate; controlling, based on the acquired particle information, a factor related to sizes of gas clusters having aggregates of atoms or molecules of a cleaning gas; ejecting the cleaning gas, at a higher pressure than a processing atmosphere where the substrate is provided, to the processing atmosphere and generating the gas clusters by adiabatic expansion; and removing the particles by irradiating the gas clusters in a perpendicular direction to a surface of the substrate. As a result, even if recesses for a circuit pattern are formed on the surface of the substrate, the particles in the recesses can be removed at a high removal rate.

Abstract: In a method of irradiating a gas cluster ion beam on a solid surface and smoothing the solid surface, the angle formed between the solid surface and the gas cluster ion beam is chosen to be between 1° and an angle less than 30°. In case the solid surface is relatively rough, the processing efficiency is raised by first irradiating a beam at an irradiation angle ? chosen to be something like 90° as a first step, and subsequently at an irradiation angle ? chosen to be 1° to less than 30° as a second step. Alternatively, the set of the aforementioned first step and second step is repeated several times.

Abstract: In a method of irradiating a gas cluster ion beam on a solid surface and smoothing the solid surface, the angle formed between the solid surface and the gas cluster ion beam is chosen to be between 1° and an angle less than 30°. In case the solid surface is relatively rough, the processing efficiency is raised by first irradiating a beam at an irradiation angle ? chosen to be something like 90° as a first step, and subsequently at an irradiation angle ? chosen to be 1° to less than 30° as a second step. Alternatively, the set of the aforementioned first step and second step is repeated several times.

Abstract: In a blind with two shields, it is possible to perform different operations by operating one operating means and reduce the dimension of an operating device by reducing the number of parts. The operating device comprises an operating shaft rotated upon receiving an operation force, a clutch rotating integrally with the operating shaft and axially sliding on the operating shaft, and a first transmission member 50 and a second transmission member disposed at both axial sides of the clutch to transmit driving force to a first driving shaft and a second driving shaft, respectively. The sliding direction of the clutch is determined by the rotational direction of the operating shaft, such that as the clutch sliding on the operating shaft is engaged with one of the transmission members and, the rotation of the operating shaft is transmitted to any one of the driving shafts and through one of the transmission members and.

Abstract: A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

Abstract: In a blind with two shields, it is possible to perform different operations by operating one operating means and reduce the dimension of an operating device by reducing the number of parts. The operating device comprises an operating shaft rotated upon receiving an operation force, a clutch rotating integrally with the operating shaft and axially sliding on the operating shaft, and a first transmission member 50 and a second transmission member disposed at both axial sides of the clutch to transmit driving force to a first driving shaft and a second driving shaft respectively. The sliding direction of the clutch is determined by the rotational direction of the operating shaft, such that as the clutch sliding on the operating shaft is engaged with one of the transmission members and, the rotation of the operating shaft is transmitted to any one of the driving shafts and through one of the transmission members and.

Abstract: A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

Abstract: A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

Abstract: A semiconductor device includes: a semiconductor substrate; a vertical type trench gate MOS transistor; a Schottky barrier diode; multiple trenches having a stripe pattern to divide an inner region into first and second separation regions; and a poly silicon film in each trench. The first separation region includes a first conductive type region for providing a source and a second conductive type layer for providing a channel region. The first conductive type region is adjacent to a first trench. The poly silicon film in the first trench is coupled with a gate wiring. A second trench is not adjacent to the first conductive type region. The poly silicon film in the second trench is coupled with a source or gate wiring. The substrate in the second separation region is coupled with the source wiring for providing a Schottky barrier.

Abstract: A semiconductor device includes: a semiconductor substrate; a vertical type trench gate MOS transistor; a Schottky barrier diode; multiple trenches having a stripe pattern to divide an inner region into first and second separation regions; and a poly silicon film in each trench. The first separation region includes a first conductive type region for providing a source and a second conductive type layer for providing a channel region. The first conductive type region is adjacent to a first trench. The poly silicon film in the first trench is coupled with a gate wiring. A second trench is not adjacent to the first conductive type region. The poly silicon film in the second trench is coupled with a source or gate wiring. The substrate in the second separation region is coupled with the source wiring for providing a Schottky barrier.

Abstract: A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

Abstract: A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.