Patents by Inventor Takaaki Aoki
Takaaki Aoki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10748822Abstract: A method for manufacturing a semiconductor device having a trench gate structure is provided. In the method, a first voltage-current characteristic indicating a relation between the main current and the gate voltage under a first temperature is measured to calculate a first threshold voltage. A second voltage-current characteristic indicating a relation between the main current and the gate voltage under a second temperature different from the first temperature is measured to calculate a second threshold voltage. It is determined whether the semiconductor device is a non-defective product or a defective product based on whether a difference between the second threshold voltage and the first threshold voltage is larger than a determination threshold value.Type: GrantFiled: July 10, 2019Date of Patent: August 18, 2020Assignee: DENSO CORPORATIONInventors: Takaaki Aoki, Masakazu Itoh
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Publication number: 20190333827Abstract: A method for manufacturing a semiconductor device having a trench gate structure is provided. In the method, a first voltage-current characteristic indicating a relation between the main current and the gate voltage under a first temperature is measured to calculate a first threshold voltage. A second voltage-current characteristic indicating a relation between the main current and the gate voltage under a second temperature different from the first temperature is measured to calculate a second threshold voltage. It is determined whether the semiconductor device is a non-defective product or a defective product based on whether a difference between the second threshold voltage and the first threshold voltage is larger than a determination threshold value.Type: ApplicationFiled: July 10, 2019Publication date: October 31, 2019Inventors: Takaaki AOKI, Masakazu ITOH
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Patent number: 9881815Abstract: A substrate cleaning method for removing particles adhered to a substrate includes: acquiring particle information including diameters of the particles adhered to the substrate; controlling, based on the acquired particle information, a factor related to sizes of gas clusters having aggregates of atoms or molecules of a cleaning gas; ejecting the cleaning gas, at a higher pressure than a processing atmosphere where the substrate is provided, to the processing atmosphere and generating the gas clusters by adiabatic expansion; and removing the particles by irradiating the gas clusters in a perpendicular direction to a surface of the substrate. As a result, even if recesses for a circuit pattern are formed on the surface of the substrate, the particles in the recesses can be removed at a high removal rate.Type: GrantFiled: February 25, 2013Date of Patent: January 30, 2018Assignees: Tokyo Electron Limited, Kyoto UniversityInventors: Jiro Matsuo, Toshio Seki, Takaaki Aoki, Kazuya Dobashi, Kensuke Inai, Misako Saito
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Patent number: 9444575Abstract: A receiver includes a first detector that detects a Received Signal Strength Indicator of a desiring signal wave transmitted from a transmitter, a second detector that detects a power of interfering wave generated by an external device, a transmission rate selection processor that selects a transmission rate, which is used to transmit a signal from the transmitter to the receiver, from among a plurality of transmission rates based on the detected Received Signal Strength Indicator of the desiring signal wave and a detected power of the interfering wave, when the second detector detects generation of the interfering wave, and a transmission rate notificator that notifies the transmitter of the transmission rate selected by the transmission rate selection processor.Type: GrantFiled: October 29, 2014Date of Patent: September 13, 2016Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Yosuke Ukita, Naotake Yamamoto, Takaaki Aoki
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Patent number: 9136333Abstract: A semiconductor device includes: a semiconductor substrate; a vertical type trench gate MOS transistor; a Schottky barrier diode; multiple trenches having a stripe pattern to divide an inner region into first and second separation regions; and a poly silicon film in each trench. The first separation region includes a first conductive type region for providing a source and a second conductive type layer for providing a channel region. The first conductive type region is adjacent to a first trench. The poly silicon film in the first trench is coupled with a gate wiring. A second trench is not adjacent to the first conductive type region. The poly silicon film in the second trench is coupled with a source or gate wiring. The substrate in the second separation region is coupled with the source wiring for providing a Schottky barrier.Type: GrantFiled: January 18, 2012Date of Patent: September 15, 2015Assignee: DENSO CORPORATIONInventors: Takaaki Aoki, Tomofusa Shiga
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Publication number: 20150124635Abstract: A receiver includes a first detector that detects a Received Signal Strength Indicator of a desiring signal wave transmitted from a transmitter, a second detector that detects a power of interfering wave generated by an external device, a transmission rate selection processor that selects a transmission rate, which is used to transmit a signal from the transmitter to the receiver, from among a plurality of transmission rates based on the detected Received Signal Strength Indicator of the desiring signal wave and a detected power of the interfering wave, when the second detector detects generation of the interfering wave, and a transmission rate notificator that notifies the transmitter of the transmission rate selected by the transmission rate selection processor.Type: ApplicationFiled: October 29, 2014Publication date: May 7, 2015Inventors: YOSUKE UKITA, NAOTAKE YAMAMOTO, TAKAAKI AOKI
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Publication number: 20150007858Abstract: A substrate cleaning method for removing particles adhered to a substrate includes: acquiring particle information including diameters of the particles adhered to the substrate; controlling, based on the acquired particle information, a factor related to sizes of gas clusters having aggregates of atoms or molecules of a cleaning gas; ejecting the cleaning gas, at a higher pressure than a processing atmosphere where the substrate is provided, to the processing atmosphere and generating the gas clusters by adiabatic expansion; and removing the particles by irradiating the gas clusters in a perpendicular direction to a surface of the substrate. As a result, even if recesses for a circuit pattern are formed on the surface of the substrate, the particles in the recesses can be removed at a high removal rate.Type: ApplicationFiled: February 25, 2013Publication date: January 8, 2015Inventors: Jiro Matsuo, Toshio Seki, Takaaki Aoki, Kazuya Dobashi, Kensuke Inai, Misako Saito
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Publication number: 20140299465Abstract: In a method of irradiating a gas cluster ion beam on a solid surface and smoothing the solid surface, the angle formed between the solid surface and the gas cluster ion beam is chosen to be between 1° and an angle less than 30°. In case the solid surface is relatively rough, the processing efficiency is raised by first irradiating a beam at an irradiation angle ? chosen to be something like 90° as a first step, and subsequently at an irradiation angle ? chosen to be 1° to less than 30° as a second step. Alternatively, the set of the aforementioned first step and second step is repeated several times.Type: ApplicationFiled: June 17, 2014Publication date: October 9, 2014Inventors: Akinobu SATO, Akiko SUZUKI, Emmanuel BOURELLE, Jiro MATSUO, Toshio SEKI, Takaaki AOKI
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Patent number: 8764952Abstract: In a method of irradiating a gas cluster ion beam on a solid surface and smoothing the solid surface, the angle formed between the solid surface and the gas cluster ion beam is chosen to be between 1° and an angle less than 30°. In case the solid surface is relatively rough, the processing efficiency is raised by first irradiating a beam at an irradiation angle ? chosen to be something like 90° as a first step, and subsequently at an irradiation angle ? chosen to be 1° to less than 30° as a second step. Alternatively, the set of the aforementioned first step and second step is repeated several times.Type: GrantFiled: September 29, 2004Date of Patent: July 1, 2014Assignee: Japan Aviation Electronics Industry LimitedInventors: Akinobu Sato, Akiko Suzuki, Emmanuel Bourelle, Jiro Matsuo, Toshio Seki, Takaaki Aoki
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Patent number: 8757237Abstract: In a blind with two shields, it is possible to perform different operations by operating one operating means and reduce the dimension of an operating device by reducing the number of parts. The operating device comprises an operating shaft rotated upon receiving an operation force, a clutch rotating integrally with the operating shaft and axially sliding on the operating shaft, and a first transmission member 50 and a second transmission member disposed at both axial sides of the clutch to transmit driving force to a first driving shaft and a second driving shaft, respectively. The sliding direction of the clutch is determined by the rotational direction of the operating shaft, such that as the clutch sliding on the operating shaft is engaged with one of the transmission members and, the rotation of the operating shaft is transmitted to any one of the driving shafts and through one of the transmission members and.Type: GrantFiled: March 23, 2011Date of Patent: June 24, 2014Assignee: Nichibei Co., Ltd.Inventor: Takaaki Aoki
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Patent number: 8519748Abstract: A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.Type: GrantFiled: March 29, 2012Date of Patent: August 27, 2013Assignee: DENSO CORPORATIONInventors: Takaaki Aoki, Shoji Mizuno, Shigeki Takahashi, Takashi Nakano, Nozomu Akagi, Yoshiyuki Hattori, Makoto Kuwahara, Kyoko Okada
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Publication number: 20130056162Abstract: In a blind with two shields, it is possible to perform different operations by operating one operating means and reduce the dimension of an operating device by reducing the number of parts. The operating device comprises an operating shaft rotated upon receiving an operation force, a clutch rotating integrally with the operating shaft and axially sliding on the operating shaft, and a first transmission member 50 and a second transmission member disposed at both axial sides of the clutch to transmit driving force to a first driving shaft and a second driving shaft respectively. The sliding direction of the clutch is determined by the rotational direction of the operating shaft, such that as the clutch sliding on the operating shaft is engaged with one of the transmission members and, the rotation of the operating shaft is transmitted to any one of the driving shafts and through one of the transmission members and.Type: ApplicationFiled: March 23, 2011Publication date: March 7, 2013Applicant: Nichibei Co., LTDInventor: Takaaki Aoki
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Publication number: 20120182051Abstract: A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.Type: ApplicationFiled: March 29, 2012Publication date: July 19, 2012Applicant: DENSO CORPORATIONInventors: Takaaki Aoki, Shoji Mizuno, Shigeki Takahashi, Takashi Nakano, Nozomu Akagi, Yoshiyuki Hattori, Makoto Kuwahara, Kyoko Okada
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Patent number: 8179169Abstract: A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.Type: GrantFiled: May 11, 2011Date of Patent: May 15, 2012Assignee: Denso CorporationInventors: Takaaki Aoki, Shoji Mizuno, Shigeki Takahashi, Takashi Nakano, Nozomu Akagi, Yoshiyuki Hattori, Makoto Kuwahara, Kyoko Okada
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Publication number: 20120112273Abstract: A semiconductor device includes: a semiconductor substrate; a vertical type trench gate MOS transistor; a Schottky barrier diode; multiple trenches having a stripe pattern to divide an inner region into first and second separation regions; and a poly silicon film in each trench. The first separation region includes a first conductive type region for providing a source and a second conductive type layer for providing a channel region. The first conductive type region is adjacent to a first trench. The poly silicon film in the first trench is coupled with a gate wiring. A second trench is not adjacent to the first conductive type region. The poly silicon film in the second trench is coupled with a source or gate wiring. The substrate in the second separation region is coupled with the source wiring for providing a Schottky barrier.Type: ApplicationFiled: January 18, 2012Publication date: May 10, 2012Applicant: DENSO CORPORATIONInventors: Takaaki AOKI, Tomofusa Shiga
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Patent number: 8154073Abstract: A semiconductor device includes: a semiconductor substrate; a vertical type trench gate MOS transistor; a Schottky barrier diode; multiple trenches having a stripe pattern to divide an inner region into first and second separation regions; and a poly silicon film in each trench. The first separation region includes a first conductive type region for providing a source and a second conductive type layer for providing a channel region. The first conductive type region is adjacent to a first trench. The poly silicon film in the first trench is coupled with a gate wiring. A second trench is not adjacent to the first conductive type region. The poly silicon film in the second trench is coupled with a source or gate wiring. The substrate in the second separation region is coupled with the source wiring for providing a Schottky barrier.Type: GrantFiled: July 12, 2007Date of Patent: April 10, 2012Assignee: DENSO CORPORATIONInventors: Takaaki Aoki, Tetsuo Fujii, Tomofusa Shiga
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Publication number: 20110210766Abstract: A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.Type: ApplicationFiled: May 11, 2011Publication date: September 1, 2011Applicant: DENSO CORPORATIONInventors: Takaaki AOKI, Shoji Mizuno, Shigeki Takahashi, Takashi Nakano, Nozomu Akagi, Yoshiyuki Hattori, Makoto Kuwahara, Kyoko Okada
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Patent number: 7982508Abstract: A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.Type: GrantFiled: December 17, 2009Date of Patent: July 19, 2011Assignee: DENSO CORPORATIONInventors: Takaaki Aoki, Shoji Mizuno
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Patent number: 7800195Abstract: A semiconductor apparatus is provided. The semiconductor apparatus includes a semiconductor substrate and a temperature sensing diode that is disposed on a surface part of the semiconductor substrate. A relation between a forward current flowing through the temperature sensing diode and a corresponding voltage drop across the temperature sensing diode varies with temperature. The semiconductor apparatus further includes a capacitor that is coupled with the temperature sensing diode, configured to reduce noise to act on the temperature sensing diode, and disposed such that the capacitor and the temperature sensing diode have a layered structure in a thickness direction of the semiconductor substrate.Type: GrantFiled: February 26, 2008Date of Patent: September 21, 2010Assignee: DENSO CORPORATIONInventors: Shoji Ozoe, Shoji Mizuno, Takaaki Aoki, Tomofusa Shiga
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Publication number: 20100102857Abstract: A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.Type: ApplicationFiled: December 17, 2009Publication date: April 29, 2010Applicant: DENSO CORPORATIONInventors: Takaaki Aoki, Shoji Mizuno, Shigeki Takahashi, Takashi Nakano, Nozomu Akagi, Yoshiyuki Hattori, Makoto Kuwahara, Kyoko Okada