Patents by Inventor Takaaki Aoki

Takaaki Aoki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220311019
    Abstract: A power generation cell includes a resin-framed electrolyte membrane electrode assembly. The cathode of the resin-framed membrane electrode assembly has a larger surface dimension than the anode. An outer peripheral portion of the anode is positioned between a first buffer and a fuel gas flow field. An outer peripheral portion of the cathode is positioned between the resin frame member and the second buffer.
    Type: Application
    Filed: February 27, 2022
    Publication date: September 29, 2022
    Inventors: Masaru ODA, Takaaki SHIKANO, Satoshi AOKI, Takuma YAMAWAKI
  • Publication number: 20220248947
    Abstract: Provided are an ophthalmologic device and a method of controlling the same capable of accurately and reliably acquiring ocular characteristics of a subject eye. The ophthalmologic device includes: a face supporting unit configured to support a face of an examinee; an anterior ocular segment image acquiring unit configured to repeatedly acquire an anterior ocular segment image of the subject eye of the face supported by the face supporting unit; a pupil image detecting unit configured to detect a pupil image of the subject eye for each anterior ocular segment image based on the anterior ocular segment image repeatedly acquired by the anterior ocular segment image acquiring unit; and a determining unit configured to determine whether or not the face is properly supported by the face supporting unit based on a result of detection of the pupil image for each anterior ocular segment image by the pupil image detecting unit.
    Type: Application
    Filed: April 27, 2022
    Publication date: August 11, 2022
    Applicant: Topcon Corporation
    Inventors: Takaaki SHIRATORI, Takuya OKI, Hiroyuki AOKI, Yusuke ONO
  • Patent number: 10748822
    Abstract: A method for manufacturing a semiconductor device having a trench gate structure is provided. In the method, a first voltage-current characteristic indicating a relation between the main current and the gate voltage under a first temperature is measured to calculate a first threshold voltage. A second voltage-current characteristic indicating a relation between the main current and the gate voltage under a second temperature different from the first temperature is measured to calculate a second threshold voltage. It is determined whether the semiconductor device is a non-defective product or a defective product based on whether a difference between the second threshold voltage and the first threshold voltage is larger than a determination threshold value.
    Type: Grant
    Filed: July 10, 2019
    Date of Patent: August 18, 2020
    Assignee: DENSO CORPORATION
    Inventors: Takaaki Aoki, Masakazu Itoh
  • Publication number: 20190333827
    Abstract: A method for manufacturing a semiconductor device having a trench gate structure is provided. In the method, a first voltage-current characteristic indicating a relation between the main current and the gate voltage under a first temperature is measured to calculate a first threshold voltage. A second voltage-current characteristic indicating a relation between the main current and the gate voltage under a second temperature different from the first temperature is measured to calculate a second threshold voltage. It is determined whether the semiconductor device is a non-defective product or a defective product based on whether a difference between the second threshold voltage and the first threshold voltage is larger than a determination threshold value.
    Type: Application
    Filed: July 10, 2019
    Publication date: October 31, 2019
    Inventors: Takaaki AOKI, Masakazu ITOH
  • Patent number: 9881815
    Abstract: A substrate cleaning method for removing particles adhered to a substrate includes: acquiring particle information including diameters of the particles adhered to the substrate; controlling, based on the acquired particle information, a factor related to sizes of gas clusters having aggregates of atoms or molecules of a cleaning gas; ejecting the cleaning gas, at a higher pressure than a processing atmosphere where the substrate is provided, to the processing atmosphere and generating the gas clusters by adiabatic expansion; and removing the particles by irradiating the gas clusters in a perpendicular direction to a surface of the substrate. As a result, even if recesses for a circuit pattern are formed on the surface of the substrate, the particles in the recesses can be removed at a high removal rate.
    Type: Grant
    Filed: February 25, 2013
    Date of Patent: January 30, 2018
    Assignees: Tokyo Electron Limited, Kyoto University
    Inventors: Jiro Matsuo, Toshio Seki, Takaaki Aoki, Kazuya Dobashi, Kensuke Inai, Misako Saito
  • Patent number: 9444575
    Abstract: A receiver includes a first detector that detects a Received Signal Strength Indicator of a desiring signal wave transmitted from a transmitter, a second detector that detects a power of interfering wave generated by an external device, a transmission rate selection processor that selects a transmission rate, which is used to transmit a signal from the transmitter to the receiver, from among a plurality of transmission rates based on the detected Received Signal Strength Indicator of the desiring signal wave and a detected power of the interfering wave, when the second detector detects generation of the interfering wave, and a transmission rate notificator that notifies the transmitter of the transmission rate selected by the transmission rate selection processor.
    Type: Grant
    Filed: October 29, 2014
    Date of Patent: September 13, 2016
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Yosuke Ukita, Naotake Yamamoto, Takaaki Aoki
  • Patent number: 9136333
    Abstract: A semiconductor device includes: a semiconductor substrate; a vertical type trench gate MOS transistor; a Schottky barrier diode; multiple trenches having a stripe pattern to divide an inner region into first and second separation regions; and a poly silicon film in each trench. The first separation region includes a first conductive type region for providing a source and a second conductive type layer for providing a channel region. The first conductive type region is adjacent to a first trench. The poly silicon film in the first trench is coupled with a gate wiring. A second trench is not adjacent to the first conductive type region. The poly silicon film in the second trench is coupled with a source or gate wiring. The substrate in the second separation region is coupled with the source wiring for providing a Schottky barrier.
    Type: Grant
    Filed: January 18, 2012
    Date of Patent: September 15, 2015
    Assignee: DENSO CORPORATION
    Inventors: Takaaki Aoki, Tomofusa Shiga
  • Publication number: 20150124635
    Abstract: A receiver includes a first detector that detects a Received Signal Strength Indicator of a desiring signal wave transmitted from a transmitter, a second detector that detects a power of interfering wave generated by an external device, a transmission rate selection processor that selects a transmission rate, which is used to transmit a signal from the transmitter to the receiver, from among a plurality of transmission rates based on the detected Received Signal Strength Indicator of the desiring signal wave and a detected power of the interfering wave, when the second detector detects generation of the interfering wave, and a transmission rate notificator that notifies the transmitter of the transmission rate selected by the transmission rate selection processor.
    Type: Application
    Filed: October 29, 2014
    Publication date: May 7, 2015
    Inventors: YOSUKE UKITA, NAOTAKE YAMAMOTO, TAKAAKI AOKI
  • Publication number: 20150007858
    Abstract: A substrate cleaning method for removing particles adhered to a substrate includes: acquiring particle information including diameters of the particles adhered to the substrate; controlling, based on the acquired particle information, a factor related to sizes of gas clusters having aggregates of atoms or molecules of a cleaning gas; ejecting the cleaning gas, at a higher pressure than a processing atmosphere where the substrate is provided, to the processing atmosphere and generating the gas clusters by adiabatic expansion; and removing the particles by irradiating the gas clusters in a perpendicular direction to a surface of the substrate. As a result, even if recesses for a circuit pattern are formed on the surface of the substrate, the particles in the recesses can be removed at a high removal rate.
    Type: Application
    Filed: February 25, 2013
    Publication date: January 8, 2015
    Inventors: Jiro Matsuo, Toshio Seki, Takaaki Aoki, Kazuya Dobashi, Kensuke Inai, Misako Saito
  • Publication number: 20140299465
    Abstract: In a method of irradiating a gas cluster ion beam on a solid surface and smoothing the solid surface, the angle formed between the solid surface and the gas cluster ion beam is chosen to be between 1° and an angle less than 30°. In case the solid surface is relatively rough, the processing efficiency is raised by first irradiating a beam at an irradiation angle ? chosen to be something like 90° as a first step, and subsequently at an irradiation angle ? chosen to be 1° to less than 30° as a second step. Alternatively, the set of the aforementioned first step and second step is repeated several times.
    Type: Application
    Filed: June 17, 2014
    Publication date: October 9, 2014
    Inventors: Akinobu SATO, Akiko SUZUKI, Emmanuel BOURELLE, Jiro MATSUO, Toshio SEKI, Takaaki AOKI
  • Patent number: 8764952
    Abstract: In a method of irradiating a gas cluster ion beam on a solid surface and smoothing the solid surface, the angle formed between the solid surface and the gas cluster ion beam is chosen to be between 1° and an angle less than 30°. In case the solid surface is relatively rough, the processing efficiency is raised by first irradiating a beam at an irradiation angle ? chosen to be something like 90° as a first step, and subsequently at an irradiation angle ? chosen to be 1° to less than 30° as a second step. Alternatively, the set of the aforementioned first step and second step is repeated several times.
    Type: Grant
    Filed: September 29, 2004
    Date of Patent: July 1, 2014
    Assignee: Japan Aviation Electronics Industry Limited
    Inventors: Akinobu Sato, Akiko Suzuki, Emmanuel Bourelle, Jiro Matsuo, Toshio Seki, Takaaki Aoki
  • Patent number: 8757237
    Abstract: In a blind with two shields, it is possible to perform different operations by operating one operating means and reduce the dimension of an operating device by reducing the number of parts. The operating device comprises an operating shaft rotated upon receiving an operation force, a clutch rotating integrally with the operating shaft and axially sliding on the operating shaft, and a first transmission member 50 and a second transmission member disposed at both axial sides of the clutch to transmit driving force to a first driving shaft and a second driving shaft, respectively. The sliding direction of the clutch is determined by the rotational direction of the operating shaft, such that as the clutch sliding on the operating shaft is engaged with one of the transmission members and, the rotation of the operating shaft is transmitted to any one of the driving shafts and through one of the transmission members and.
    Type: Grant
    Filed: March 23, 2011
    Date of Patent: June 24, 2014
    Assignee: Nichibei Co., Ltd.
    Inventor: Takaaki Aoki
  • Patent number: 8519748
    Abstract: A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.
    Type: Grant
    Filed: March 29, 2012
    Date of Patent: August 27, 2013
    Assignee: DENSO CORPORATION
    Inventors: Takaaki Aoki, Shoji Mizuno, Shigeki Takahashi, Takashi Nakano, Nozomu Akagi, Yoshiyuki Hattori, Makoto Kuwahara, Kyoko Okada
  • Publication number: 20130056162
    Abstract: In a blind with two shields, it is possible to perform different operations by operating one operating means and reduce the dimension of an operating device by reducing the number of parts. The operating device comprises an operating shaft rotated upon receiving an operation force, a clutch rotating integrally with the operating shaft and axially sliding on the operating shaft, and a first transmission member 50 and a second transmission member disposed at both axial sides of the clutch to transmit driving force to a first driving shaft and a second driving shaft respectively. The sliding direction of the clutch is determined by the rotational direction of the operating shaft, such that as the clutch sliding on the operating shaft is engaged with one of the transmission members and, the rotation of the operating shaft is transmitted to any one of the driving shafts and through one of the transmission members and.
    Type: Application
    Filed: March 23, 2011
    Publication date: March 7, 2013
    Applicant: Nichibei Co., LTD
    Inventor: Takaaki Aoki
  • Publication number: 20120182051
    Abstract: A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.
    Type: Application
    Filed: March 29, 2012
    Publication date: July 19, 2012
    Applicant: DENSO CORPORATION
    Inventors: Takaaki Aoki, Shoji Mizuno, Shigeki Takahashi, Takashi Nakano, Nozomu Akagi, Yoshiyuki Hattori, Makoto Kuwahara, Kyoko Okada
  • Patent number: 8179169
    Abstract: A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.
    Type: Grant
    Filed: May 11, 2011
    Date of Patent: May 15, 2012
    Assignee: Denso Corporation
    Inventors: Takaaki Aoki, Shoji Mizuno, Shigeki Takahashi, Takashi Nakano, Nozomu Akagi, Yoshiyuki Hattori, Makoto Kuwahara, Kyoko Okada
  • Publication number: 20120112273
    Abstract: A semiconductor device includes: a semiconductor substrate; a vertical type trench gate MOS transistor; a Schottky barrier diode; multiple trenches having a stripe pattern to divide an inner region into first and second separation regions; and a poly silicon film in each trench. The first separation region includes a first conductive type region for providing a source and a second conductive type layer for providing a channel region. The first conductive type region is adjacent to a first trench. The poly silicon film in the first trench is coupled with a gate wiring. A second trench is not adjacent to the first conductive type region. The poly silicon film in the second trench is coupled with a source or gate wiring. The substrate in the second separation region is coupled with the source wiring for providing a Schottky barrier.
    Type: Application
    Filed: January 18, 2012
    Publication date: May 10, 2012
    Applicant: DENSO CORPORATION
    Inventors: Takaaki AOKI, Tomofusa Shiga
  • Patent number: 8154073
    Abstract: A semiconductor device includes: a semiconductor substrate; a vertical type trench gate MOS transistor; a Schottky barrier diode; multiple trenches having a stripe pattern to divide an inner region into first and second separation regions; and a poly silicon film in each trench. The first separation region includes a first conductive type region for providing a source and a second conductive type layer for providing a channel region. The first conductive type region is adjacent to a first trench. The poly silicon film in the first trench is coupled with a gate wiring. A second trench is not adjacent to the first conductive type region. The poly silicon film in the second trench is coupled with a source or gate wiring. The substrate in the second separation region is coupled with the source wiring for providing a Schottky barrier.
    Type: Grant
    Filed: July 12, 2007
    Date of Patent: April 10, 2012
    Assignee: DENSO CORPORATION
    Inventors: Takaaki Aoki, Tetsuo Fujii, Tomofusa Shiga
  • Publication number: 20110210766
    Abstract: A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.
    Type: Application
    Filed: May 11, 2011
    Publication date: September 1, 2011
    Applicant: DENSO CORPORATION
    Inventors: Takaaki AOKI, Shoji Mizuno, Shigeki Takahashi, Takashi Nakano, Nozomu Akagi, Yoshiyuki Hattori, Makoto Kuwahara, Kyoko Okada
  • Patent number: 7982508
    Abstract: A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.
    Type: Grant
    Filed: December 17, 2009
    Date of Patent: July 19, 2011
    Assignee: DENSO CORPORATION
    Inventors: Takaaki Aoki, Shoji Mizuno