Patents by Inventor Takaaki Aoki
Takaaki Aoki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7800195Abstract: A semiconductor apparatus is provided. The semiconductor apparatus includes a semiconductor substrate and a temperature sensing diode that is disposed on a surface part of the semiconductor substrate. A relation between a forward current flowing through the temperature sensing diode and a corresponding voltage drop across the temperature sensing diode varies with temperature. The semiconductor apparatus further includes a capacitor that is coupled with the temperature sensing diode, configured to reduce noise to act on the temperature sensing diode, and disposed such that the capacitor and the temperature sensing diode have a layered structure in a thickness direction of the semiconductor substrate.Type: GrantFiled: February 26, 2008Date of Patent: September 21, 2010Assignee: DENSO CORPORATIONInventors: Shoji Ozoe, Shoji Mizuno, Takaaki Aoki, Tomofusa Shiga
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Publication number: 20100102857Abstract: A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.Type: ApplicationFiled: December 17, 2009Publication date: April 29, 2010Applicant: DENSO CORPORATIONInventors: Takaaki Aoki, Shoji Mizuno, Shigeki Takahashi, Takashi Nakano, Nozomu Akagi, Yoshiyuki Hattori, Makoto Kuwahara, Kyoko Okada
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Publication number: 20100096263Abstract: In a method of irradiating a gas cluster ion beam on a solid surface and smoothing the solid surface, the angle formed between the solid surface and the gas cluster ion beam is chosen to be between 1° and an angle less than 30°. In case the solid surface is relatively rough, the processing efficiency is raised by first irradiating a beam at an irradiation angle ? chosen to be something like 90° as a first step, and subsequently at an irradiation angle ? chosen to be 1° to less than 30° as a second step. Alternatively, the set of the aforementioned first step and second step is repeated several times.Type: ApplicationFiled: December 18, 2009Publication date: April 22, 2010Applicant: Japan Aviation Electronics Industry LimitedInventors: Akinobu Sato, Akiko Suzuki, Emmanuel Bourelle, Jiro Matsuo, Toshio Seki, Takaaki Aoki
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Patent number: 7671636Abstract: A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.Type: GrantFiled: March 22, 2007Date of Patent: March 2, 2010Assignee: DENSO CORPORATIONInventors: Takaaki Aoki, Shoji Mizuno, Shigeki Takahashi, Takashi Nakano, Nozomu Akagi, Yoshiyuki Hattori, Makoto Kuwahara, Kyoko Okada
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Patent number: 7622768Abstract: On the surface of a silicon nitride film, there is formed a thermal oxide film, over which a CVD oxide film is then formed to provide a silicon oxide film of two-layered structure films. Moreover, the total thickness of the two-layered structure films is set to a value from 5 nm to 30 nm. Thus, the silicon oxide film is made into the two-layered structure films of the thermal oxide film and the CVD oxide film to thereby achieve the thickness of the silicon oxide film. As a result, it is possible to prevent a Vth from being lowered by a charge trap phenomenon and to prevent the Vth from fluctuating due to the enlargement of the bird's beak length by the silicon oxide film.Type: GrantFiled: April 21, 2005Date of Patent: November 24, 2009Assignee: DENSO CORPORATIONInventors: Takaaki Aoki, Mikimasa Suzuki, Yukio Tsuzuki, Tomofusa Shiga
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Patent number: 7563379Abstract: In a dry etching method in which clusters formed by agglomeration of atoms or molecules are ionized and accelerated as a cluster ion beam for irradiation of an object surface to etch away therefrom its constituent atoms, the clusters are mixed clusters 42 formed by agglomeration of two or more kinds of atoms or molecules, and the mixed clusters 42 contain atoms 43 of at least one of argon, neon, xenon and krypton, and a component 44 that is deposited on the object surface to form a thin film by reaction therewith. With this method, it is possible to provide an extremely reduced sidewall surface roughness and high vertical machining accuracy.Type: GrantFiled: December 8, 2004Date of Patent: July 21, 2009Assignee: Japan Aviation Electronics Industry LimitedInventors: Akiko Suzuki, Akinobu Sato, Emmanuel Bourelle, Jiro Matsuo, Toshio Seki, Takaaki Aoki
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Patent number: 7541257Abstract: A semiconductor device includes: a silicon substrate; and a silicon oxide film disposed on the silicon substrate. The silicon oxide film includes a part, which separates from a surface of the silicon substrate, so that the silicon oxide film provides a three-dimensional construction. By using the three-dimensional construction, an additional function such as a resistor or a capacitor is easily added in the device. Further, a manufacturing method of this three-dimensional construction is simple and has a low cost.Type: GrantFiled: September 12, 2006Date of Patent: June 2, 2009Assignee: DENSO CORPORATIONInventors: Eiji Ishikawa, Takaaki Aoki
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Patent number: 7420246Abstract: A vertical type semiconductor device includes: a silicon substrate having a first surface and a second surface; a first electrode disposed on the first surface of the silicon substrate; and a second electrode disposed on the second surface of the silicon substrate. Current is capable of flowing between the first electrode and the second electrode in a vertical direction of the silicon substrate. The second surface of the silicon substrate includes a re-crystallized silicon layer. The second electrode includes an aluminum film so that the aluminum film contacts the re-crystallized silicon layer with ohmic contact.Type: GrantFiled: May 30, 2006Date of Patent: September 2, 2008Assignee: DENSO CORPORATIONInventors: Shoji Ozoe, Tomofusa Shiga, Yoshifumi Okabe, Takaaki Aoki, Takeshi Fukazawa, Kimiharu Kayukawa
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Publication number: 20080203389Abstract: A semiconductor apparatus is provided. The semiconductor apparatus includes a semiconductor substrate and a temperature sensing diode that is disposed on a surface part of the semiconductor substrate. A relation between a forward current flowing through the temperature sensing diode and a corresponding voltage drop across the temperature sensing diode varies with temperature. The semiconductor apparatus further includes a capacitor that is coupled with the temperature sensing diode, configured to reduce noise to act on the temperature sensing diode, and disposed such that the capacitor and the temperature sensing diode have a layered structure in a thickness direction of the semiconductor substrate.Type: ApplicationFiled: February 26, 2008Publication date: August 28, 2008Applicant: DENSO CORPRORATIONInventors: Shoji Ozoe, Shoji Mizuno, Takaaki Aoki, Tomofusa Shiga
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Patent number: 7354829Abstract: A trench-gate type transistor has a gate insulating film formed on an inner wall of a trench. The gate insulating film includes a first portion located on a wall of the trench and a second portion located on upper and bottom portions of the trench. The first portion includes a first oxide film, a nitride film, and a second oxide film. The second portion includes only an oxide film and is thicker than the first portion. Accordingly, electric field concentration on upper and lower corner portions of the trench can be reduced to improve the withstand voltage. In addition, and end of the trench may have an insulation layer that is thicker than the first portion.Type: GrantFiled: October 28, 2004Date of Patent: April 8, 2008Assignee: DENSO CORPORATIONInventors: Takaaki Aoki, Yutaka Tomatsu, Akira Kuroyanagi, Mikimasa Suzuki, Hajime Soga
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Patent number: 7348244Abstract: A semiconductor device includes a semiconductor substrate, a cell region in a surface portion of the substrate for operating as a transistor, a gate lead wiring region having a gate lead pattern on the substrate, a trench in the surface portion of the substrate extending from the cell region to the gate lead wiring region, an oxide film on an inner surface of the trench, and a gate electrode in the trench insulated with at least the oxide film from the substrate. A speed of formation of a main portion of the sidewalls of the trench at the gate lead wiring region is greater than that of a main portion of the sidewalls of the trench at the cell region, so that a thickness of the oxide film at the gate lead wiring region is greater than that at the cell region.Type: GrantFiled: February 2, 2006Date of Patent: March 25, 2008Assignee: DENSO CORPORATIONInventors: Takaaki Aoki, Yukio Tsuzuki
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Publication number: 20080012610Abstract: A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.Type: ApplicationFiled: March 22, 2007Publication date: January 17, 2008Applicant: DENSO CORPORATIONInventors: Takaaki Aoki, Shoji Mizuno, Shigeki Takahashi, Takashi Nakano, Nozomu Akagi, Yoshiyuki Hattori, Makoto Kuwahara, Kyoko Okada
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Publication number: 20080012050Abstract: A semiconductor device includes: a semiconductor substrate; a vertical type trench gate MOS transistor; a Schottky barrier diode; multiple trenches having a stripe pattern to divide an inner region into first and second separation regions; and a poly silicon film in each trench. The first separation region includes a first conductive type region for providing a source and a second conductive type layer for providing a channel region. The first conductive type region is adjacent to a first trench. The poly silicon film in the first trench is coupled with a gate wiring. A second trench is not adjacent to the first conductive type region. The poly silicon film in the second trench is coupled with a source or gate wiring. The substrate in the second separation region is coupled with the source wiring for providing a Schottky barrier.Type: ApplicationFiled: July 12, 2007Publication date: January 17, 2008Applicant: DENSO CORPORATIONInventors: Takaaki Aoki, Tetsuo Fujii, Tomofusa Shiga
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Patent number: 7211987Abstract: A computer provided with an intelligent battery 52 for charging/discharging, the intelligent battery 52 supplying power to a main system unit, wherein the intelligent battery 52 includes: a voltage measuring circuit 70 for measuring a battery voltage of the intelligent battery 52; a current measuring circuit 63 for measuring a charging/discharging current of the intelligent battery 52; a temperature measuring circuit 90 for measuring a temperature of the intelligent battery 52; and a CPU 62 for periodically reading the battery voltage measured by the voltage measuring circuit 70, the charging/discharging current measured by the current measuring circuit 63, and the temperature measured by the temperature measuring circuit 90 so as to manage a capacity deterioration of the battery due to a storage deterioration and a cycle deterioration, and wherein the main system unit includes an embedded controller 41 for receiving information about the capacity deterioration from the CPU 62 of the battery.Type: GrantFiled: September 17, 2002Date of Patent: May 1, 2007Assignee: Lenovo (Singapore) Pte. Ltd.Inventors: Takaaki Aoki, Masaki Kobayashi, Atsushi Kumaki, Takeshi Matsumoto, Shigefumi Odaohhara, Mizuho Tadokoro
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Publication number: 20070066052Abstract: A semiconductor device includes: a silicon substrate; and a silicon oxide film disposed on the silicon substrate. The silicon oxide film includes a part, which separates from a surface of the silicon substrate, so that the silicon oxide film provides a three-dimensional construction. By using the three-dimensional construction, an additional function such as a resistor or a capacitor is easily added in the device. Further, a manufacturing method of this three-dimensional construction is simple and has a low cost.Type: ApplicationFiled: September 12, 2006Publication date: March 22, 2007Applicant: DENSO CORPORATIONInventors: Eiji Ishikawa, Takaaki Aoki
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Publication number: 20060278611Abstract: In a method of irradiating a gas cluster ion beam on a solid surface and smoothing the solid surface, the angle formed between the solid surface and the gas cluster ion beam is chosen to be between 1° and an angle less than 30°. In case the solid surface is relatively rough, the processing efficiency is raised by first irradiating a beam at an irradiation angle ? chosen to be something like 90° as a first step, and subsequently at an irradiation angle ? chosen to be 1° to less than 30° as a second step. Alternatively, the set of the aforementioned first step and second step is repeated several times.Type: ApplicationFiled: September 29, 2004Publication date: December 14, 2006Applicant: Japan Aviation Electronics Industry limitedInventors: Akinobu Sato, Akiko Suzuki, Emmanuel Bourelle, Jiro Matsuo, Toshio Seki, Takaaki Aoki
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Publication number: 20060273351Abstract: A vertical type semiconductor device includes: a silicon substrate having a first surface and a second surface; a first electrode disposed on the first surface of the silicon substrate; and a second electrode disposed on the second surface of the silicon substrate. Current is capable of flowing between the first electrode and the second electrode in a vertical direction of the silicon substrate. The second surface of the silicon substrate includes a re-crystallized silicon layer. The second electrode includes an aluminum film so that the aluminum film contacts the re-crystallized silicon layer with ohmic contact.Type: ApplicationFiled: May 30, 2006Publication date: December 7, 2006Applicant: DENSO CORPORATIONInventors: Shoji Ozoe, Tomofusa Shiga, Yoshifumi Okabe, Takaaki Aoki, Takeshi Fukazawa, Kimiharu Kayukawa
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Patent number: 7126187Abstract: A semiconductor device includes a semiconductor substrate, a cell region in a surface portion of the substrate for operating as a transistor, a gate lead wiring region having a gate lead pattern on the substrate, a trench in the surface portion of the substrate extending from the cell region to the gate lead wiring region, an oxide film on an inner surface of the trench, and a gate electrode in the trench insulated with at least the oxide film from the substrate. A speed of formation of a main portion of the sidewalls of the trench at the gate lead wiring region is greater than that of a main portion of the sidewalls of the trench at the cell region, so that a thickness of the oxide film at the gate lead wiring region is greater than that at the cell region.Type: GrantFiled: August 7, 2003Date of Patent: October 24, 2006Assignee: Denso CorporationInventors: Takaaki Aoki, Yukio Tsuzuki
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Publication number: 20060128100Abstract: A semiconductor device includes a semiconductor substrate, a cell region in a surface portion of the substrate for operating as a transistor, a gate lead wiring region having a gate lead pattern on the substrate, a trench in the surface portion of the substrate extending from the cell region to the gate lead wiring region, an oxide film on an inner surface of the trench, and a gate electrode in the trench insulated with at least the oxide film from the substrate. A speed of formation of a main portion of the sidewalls of the trench at the gate lead wiring region is greater than that of a main portion of the sidewalls of the trench at the cell region, so that a thickness of the oxide film at the gate lead wiring region is greater than that at the cell region.Type: ApplicationFiled: February 2, 2006Publication date: June 15, 2006Applicant: DENSO CORPORATIONInventors: Takaaki Aoki, Yukio Tsuzuki
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Patent number: D535222Type: GrantFiled: September 26, 2005Date of Patent: January 16, 2007Assignee: Toyota Jidosha Kabushiki KaishaInventors: Kenichi Onoue, Yoshiyasu Neuchi, Takaaki Aoki