Abstract: An object of the present invention is to provide a small solid-state image sensor which realizes significant improvement in sensitivity. The solid-state image sensor of the present invention includes a semiconductor substrate in which photoelectric conversion units are formed, a light-blocking film which is formed above the semiconductor substrate and has apertures formed so as to be positioned above respective photoelectric conversion units, and a high refractive index layer formed in the apertures. Here, each aperture has a smaller aperture width than a maximum wavelength in a wavelength of light in a vacuum converted from a wavelength of the light entering the photoelectric conversion unit through the apertures, and the high refractive index is made of a high refractive index material having a refractive index which allows transmission of light having the maximum wavelength through the aperture.

Abstract: Provided is a solid-state imaging device having pixel units that are two-dimensionally arranged, and including: a photodiode that generates an optical signal charge corresponding to an intensity and an exposure time of light; a MOS transistor that transfers the optical signal charge; an accumulating unit that generates a voltage corresponding to the signal charge through the MOS transistor; a storing unit that stores a voltage corresponding to an optical signal charge in the accumulating unit; and a voltage setting unit that sets a value of a voltage in the accumulating unit to a value corresponding to the voltage in the storing unit.

Abstract: A solid-state imaging device that is configurable into a small size appropriate for expanding dynamic range includes: a photodiode which is a photoelectric conversion unit that generates charge by incident light; a MOS transistor which is connected to the photodiode and transfers the charge; a floating diffusion region which is a first accumulation unit which accumulates the charge via the MOS transistor; a MOS transistor which is a second transfer unit connected to the floating diffusion region and connected in series to the MOS transistor; and a MOS transistor which is an output unit which outputs, via the MOS transistor, a signal voltage in accordance with an amount of the charge.

Abstract: Provided is a light-receiving chip whose transparent protection plate has an area equal to or smaller than an area of the light-receiving chip, and which does not require a base portion for mounting. Provision of the light-receiving chip contributes to reduction in size and weight of cameras. In addition, provision of a solid-state imaging apparatus having excellent productivity contributes to reduction in price of cameras. A solid-state imaging apparatus (10) having: a solid-state imaging device (11) (a light-receiving chip) provided with a plurality of light-receiving cells arranged either one dimensionally or two dimensionally on one main surface of a base substrate; and a transparent protection plate (12) provided to cover a light-receiving area (18) (the plurality of light-receiving cells), where an area of the transparent protection plate is equal to or smaller than an area of the light-receiving chip, and a space (20) is formed between the light-receiving cells and the transparent protection plate.

Abstract: A solid-state imaging device that enables more images to be photographed and a reading time to be shortened by effectively using storage cells is provided. By combining pieces of information which correspond to signal charges output from a photoelectric converter and are sequentially stored in storage cells, it is possible to store more pieces of information than the number of storage cells. Also, by reading the combined information stored in one storage cell, it is possible to read more pieces of information by a single reading operation.

Abstract: Provided is a compound represented by the formula (1): wherein R1 and R2 are each independently a hydrogen atom or a straight chain alkyl group having a carbon number of 1-3, R3 is a hydrogen atom, an alkyl group having a carbon number of 1-4, an alkoxyalkyl group, an aryl group, a halogen atom or a haloalkyl group, or a pharmaceutically acceptable salt thereof, which has, unlike known PGI2 analogs, a selective EP4 agonist action, and a medicament containing the compound, which is useful for the prophylaxis and/or treatment of immune diseases, diseases of the digestive tract, cardiovascular diseases, cardiac diseases, respiratory diseases, neurological diseases, ophthalmic diseases, renal diseases, hepatic diseases, bone diseases, skin diseases and the like.

Abstract: Provided is a light-receiving chip whose transparent protection plate has an area equal to or smaller than an area of the light-receiving chip, and which does not require a base portion for mounting. Provision of the light-receiving chip contributes to reduction in size and weight of cameras. In addition, provision of a solid-state imaging apparatus having excellent productivity contributes to reduction in price of cameras. A solid-state imaging apparatus (10) having: a solid-state imaging device (11) (a light-receiving chip) provided with a plurality of light-receiving cells arranged either one dimensionally or two dimensionally on one main surface of a base substrate; and a transparent protection plate (12) provided to cover a light-receiving area (18) (the plurality of light-receiving cells), where an area of the transparent protection plate is equal to or smaller than an area of the light-receiving chip, and a space (20) is formed between the light-receiving cells and the transparent protection plate.

Abstract: A solid-state imaging device for high-speed photography includes an imaging element area in which a plurality of pixel portions having photodetectors for photography are disposed in a matrix form. The solid-state imaging device generates image data by capturing pixel information obtained from the photodetectors for photography. The solid-state imaging device for high-speed photography further includes: a change detection element that detects a change in an amount of incident light, which is disposed in the imaging element area or at a predetermined position surrounding the imaging element area; and a controller that controls starting or stopping of capturing of pixel information obtained from the photodetectors for photography in accordance with a trigger signal based on a detection signal output from the change detection element.

Abstract: A solid-state imaging device includes: pixel circuits arranged in a matrix which perform photoelectric conversion on received light; and an AD conversion unit converting the resultant signal voltage of the photoelectric conversion. The AD conversion unit includes: a reference voltage generation unit generating plural reference voltages which are different from each other within a possible range for a signal voltage; a most significant bit conversion unit that identifies a voltage section including the signal voltage from among the voltage sections each having a corresponding one of the reference voltages as a base point and determines the identified result as the value of the most significant bit of the digital signal; and a least significant bit conversion unit that converts, into the least significant bit of the digital signal, the difference voltage between the signal voltage and the reference voltage as the base point of the identified voltage section.

Abstract: Provided is a solid-state imaging device that can perform a high-speed imaging, with appropriate number of pixels maintained. A plurality of pixels are arranged in a matrix in the solid-state imaging device. Each pixel includes a plurality of signal charge holding units that hold signal charges output from a photo diode. A write target switching unit selects the signal charge holding units so that signal charges output at different time points are written to the signal charge holding units, respectively. A read target switching unit switches between signal charge holding units from which to read a signal charge.

Abstract: A solid state imaging apparatus which includes a plurality of pixels two-dimensionally arranged in the vertical direction and the horizontal direction and every two vertically or horizontally adjacent ones of the plurality of pixels have color filters of different colors. In a predetermined period of time, charge signals received from ones of the plurality of pixels arranged in the vertical direction or the horizontal direction which include color filters of the same color (represented by circles) are sequentially output.

Abstract: A method for transferring a substrate includes moving first and second substrate holding sections opposite each other, moving a first substrate stage holding the substrate so as to be disposed between the first and second substrate holding sections, delivering the substrate from the first substrate stage to the first and second substrate holding sections by releasing the holding of the substrate by the first substrate stage and holding the substrate by the first and second substrate holding sections, moving the first and second substrate holding sections from a first substrate taking-over position to a second substrate taking-over position, moving a second substrate stage so as to be disposed in the interval between the first and second substrate holding sections at the second substrate taking-over position, and delivering the substrate to the second substrate stage by releasing the substrate and holding the substrate by the second substrate stage.

Abstract: The present invention provides a solid-state imaging device which can output a digital signal at a high speed without using a high-speed clock. The solid-state imaging device includes light receiving elements provided in an array and generating signal voltages based on light intensity of received light and AD converters each of which is provided in each of columns in the array. Each of the AD converters includes: a reference voltage generating unit (10) generating reference voltages; comparators (11a through 11c) comparing in parallel a current signal voltage which is one of signal voltages generated by the light receiving elements in the respective matrix columns with the reference voltages generated by the reference voltage generating unit; a digital signal generating circuit (23) generating a digital signal showing a result of the comparison and outputting the digital signal out of the AD converter.

Abstract: A developing device includes a developing container that accommodates toner particles, a developing roller that supplies the toner particles to an image carrier on which an electrostatic latent image is formed, and a stirring and transporting member that transports the toner particles inside the developing container toward the developing roller with stirring by rotating around a shaft axis. The stirring and transporting member includes a shaft portion serving as a rotation center and sheet-shaped first stirring blade and second stirring blade fixed to the shaft portion so as to extend outward in a radius direction from the shaft portion. The first stirring blade transports the toner particles in a first transportation direction. The second stirring blade transports the toner particles in a second transportation direction different from the first transportation direction.

Abstract: An AD converter includes an analog data storing unit, a first DA converter for converting an input digital data into a first analog reference voltage which varies within a first voltage range in a range of every possible signal voltage of the input analog data, a second DA converter for converting the input digital data into a second analog reference voltage which varies within a second voltage range in the range of every possible signal voltage of the input analog data, a first comparator for comparing the input analog data with the first reference voltage, a second comparator for comparing the input analog data with the second reference voltage and a digital data storing unit for storing a digital data corresponding to a point of time when a change of state occurs in the comparison results of each of the first and second comparators.

Abstract: The image forming unit 100 includes a photosensitive drum 11, a rotary developing device 30, and a rotation speed control device 70. Electrostatic latent images are formed on the surface of the photosensitive drum 11. The rotary developing device 30 includes a plurality of developing apparatuses 13 having a developing roller 14 disposed in opposition to the photosensitive drum 11, and a distance regulating collar 73 that regulates the distance between the photosensitive drum 11 and the developing roller 14. The rotation speed control device 70 includes a rotation speed control device 71 that controls the rotation speed of the rotary developing device 30 so that for a predetermined period of time until the developing apparatus 13 reaches the developing position the rotation speed of the photosensitive drum 11 and the movement speed in the circumferential direction of the distance regulating collar 73 are equal.

Abstract: In the case where a subject is captured with a high-luminance light, such as sunlight, for a background, a phenomenon that a portion of the high-luminance subject is detected as a no-signal level is prevented. The solid-state imaging device includes: a photoelectric transducer PD which converts incident light to charges; a voltage level detection circuit 50 in which pixel units 10an1 and 10bn1, each having a voltage conversion amplifying transistor Q13a which outputs a voltage by converting the charges accumulated in the photoelectric transducer PD, are arranged one-dimensionally or two-dimensionally, and which detects a pixel output voltage outputted from each of the pixel units to the common column signal line Ln; and a column signal processing circuit 80 which receives a logic output voltage of the voltage level detection circuit 50 and the pixel output voltage and which outputs a voltage to a horizontal output circuit 90.

Abstract: The final-bonder is equipped with a warping correction unit that is equipped in parallel with a backup stage with a distance of about 20 mm from such backup stage, and that includes accordion pads for sucking a liquid crystal panel; the backup stage that supports, from the back, the liquid crystal panel when pressure is applied to its outer edge portion at the bonding of semiconductor components; and a pressure head that carries out final bonding of the semiconductor components onto the outer edge portion of the liquid crystal panel by applying pressure and heat to them.

Abstract: A solid state image pickup device 110 is provided with: a plurality of pixel units 10 that are arranged two-dimensionally and include a photoelectric conversion unit (photodiode PD) that converts light into a charge and an amplification unit (amplifier Q13) that converts the charge into a voltage and outputs it; a plurality of noise signal removal units (noise cancellation units 40) that are provided one for each column and remove noises contained in the voltage outputted from the amplifier Q31 of the pixel unit 10 belonging to the column; and a plurality of column amplification units (column amplifiers 70) that amplify the voltage outputted from the amplifier Q13 of the pixel unit 10 and output the amplified voltage to the noise cancellation unit 40, and enables increase in sensitivity and reduction in noise with low power consumption.

Abstract: A noise reduction circuit outputs a signal corresponding to a voltage difference between two different signals. The noise reduction circuit includes: an amplifier circuit for amplifying the two different signals at different timings; and a voltage difference detection circuit for detecting a voltage difference between the two different signals amplified by the amplifier circuit. The noise reduction circuit accumulates, a predetermined number of times, an electric charge corresponding to the voltage difference detected by the voltage difference detection circuit and combines the accumulated electric charges to output a resultant electric charge.