Abstract: A solid-state imaging device includes: pixel circuits arranged in a matrix which perform photoelectric conversion on received light; and an AD conversion unit converting the resultant signal voltage of the photoelectric conversion. The AD conversion unit includes: a reference voltage generation unit generating plural reference voltages which are different from each other within a possible range for a signal voltage; a most significant bit conversion unit that identifies a voltage section including the signal voltage from among the voltage sections each having a corresponding one of the reference voltages as a base point and determines the identified result as the value of the most significant bit of the digital signal; and a least significant bit conversion unit that converts, into the least significant bit of the digital signal, the difference voltage between the signal voltage and the reference voltage as the base point of the identified voltage section.

Abstract: A solid state imaging device includes an imaging area where a plurality of first pixels and a plurality of second pixels are respectively arranged in the form of a matrix, each of the first pixels and the second pixels having a photoelectric conversion portion and outputting a signal in accordance with brightness of incident light when selected; a plurality of first memories that respectively store signals of selected first pixels out of the plurality of first pixels; and a plurality of second memories that are respectively connected in parallel to the first memories and respectively store signals of selected second pixels out of the plurality of second pixels. The signals stored in the first memories and in the second memories are successively read to a horizontal signal line.

Abstract: A developing device includes a container for containing toner, a rotatable shaft provided in the container, a spiral shaped blade formed on an outer circumference of the shaft, and a first spiral member for conveying the toner in the longitudinal direction of the shaft by means of rotation. In addition, a toner removing member is provided for removing the toner attached to the first spiral member. Then, by rotation of the first spiral member, the toner removing member is moved in the longitudinal direction of the shaft and the direction that is orthogonal to the longitudinal direction of the shaft so as to be in contact with the surface of the first spiral member. Accordingly, it is possible to adequately scrape the toner off the spiral shaped blade and the shaft, thereby effectively prevent an aggregation of toner from occurring.

Abstract: The received-light intensity measuring device includes: a pixel circuit 1 including a photodiode (PD) that accumulates an amount of electric charges according to the intensity of received light, a floating diffusion (FD) that generates a signal voltage VCL according to an amount of retained electric charges, and a transfer switch that controls the transfer, to the FD, of the electric charges accumulated in the PD; a DAC 11 that generates a control voltage VTRAN varying in a ramp waveform and applies VTRAN to the gate of the transfer switch; a column AD conversion circuit 13 that obtains the digital value by quantizing a length of time from a first point in time set with reference to a period during which VTRAN is applied to a second point in time at which a specific fluctuation occurs in a temporal variation rate of the signal voltage VCL while VTRAN is being applied.

Abstract: Provided is a solid-state imaging device having pixel units that are two-dimensionally arranged, and including: a photodiode that generates an optical signal charge corresponding to an intensity and an exposure time of light; a MOS transistor that transfers the optical signal charge; an accumulating unit that generates a voltage corresponding to the signal charge through the MOS transistor; a storing unit that stores a voltage corresponding to an optical signal charge in the accumulating unit; and a voltage setting unit that sets a value of a voltage in the accumulating unit to a value corresponding to the voltage in the storing unit.

Abstract: An object of the present invention is to provide a two-dimensional solid state imaging device which can realize speeding up of signal output. The two-dimensional solid state imaging device includes: a pixel region; a first capacitance element and a second capacitance element each of which is arranged for a different column of pixels and accumulates pixel signals of the corresponding column of pixels; a first horizontal signal line and a second horizontal signal line each of which transmits the pixel signals accumulated in a corresponding capacitance element; a common signal line connected to the horizontal signal lines; a scan timing generation unit and a switch unit which control readout of the pixel signals from the capacitance element to the horizontal signal line; and an external output timing unit and a switch unit which select the horizontal signal line and control output of the pixel signals from the selected horizontal signal line to the common signal line.

Abstract: A solid state image pickup device 110 is provided with: a plurality of pixel units 10 that are arranged two-dimensionally and include a photoelectric conversion unit (photodiode PD) that converts light into a charge and an amplification unit (amplifier Q13) that converts the charge into a voltage and outputs it; a plurality of noise signal removal units (noise cancellation units 40) that are provided one for each column and remove noises contained in the voltage outputted from the amplifier Q31 of the pixel unit 10 belonging to the column; and a plurality of column amplification units (column amplifiers 70) that amplify the voltage outputted from the amplifier Q13 of the pixel unit 10 and output the amplified voltage to the noise cancellation unit 40, and enables increase in sensitivity and reduction in noise with low power consumption.

Abstract: A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion cell via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.

Abstract: The final-bonder (103) is equipped with: a warping correction unit (201) that is equipped in parallel with a backup stage (203) with a distance of about 20 mm from such backup stage (203), and that includes accordion pads (202) for sucking a liquid crystal panel; the backup stage (203) that supports, from the back, the liquid crystal panel when pressure is applied to its outer edge portion at the boding of semiconductor components; and a pressure head (204) that carries out final bonding of the semiconductor components onto the outer edge portion of the liquid crystal panel by applying pressure and heat to them.

Abstract: In a solid state imaging device having a wide dynamic range, a pixel includes a photodiode that generates a charge in accordance with an intensity of incident light, signal generation units that generate a first voltage level in accordance with an amount of charge generated by the photodiode in an exposure period T1 and a second voltage level in accordance with an amount of charge generated by the photodiode in an exposure period T2, and signal composition units that composite the first and second voltage levels generated by the signal generation units.

Abstract: A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion cell via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.

Abstract: A developing device includes a developing container that accommodates toner particles, a developing roller that supplies the toner particles to an image carrier on which an electrostatic latent image is formed, and a stirring and transporting member that transports the toner particles inside the developing container toward the developing roller with stirring by rotating around a shaft axis. The stirring and transporting member includes a shaft portion serving as a rotation center and sheet-shaped first stirring blade and second stirring blade fixed to the shaft portion so as to extend outward in a radius direction from the shaft portion. The first stirring blade transports the toner particles in a first transportation direction. The second stirring blade transports the toner particles in a second transportation direction different from the first transportation direction.

Abstract: The present invention provides a solid-state imaging device which can output a digital signal at a high speed without using a high-speed clock. The solid-state imaging device includes light receiving elements provided in an array and generating signal voltages based on light intensity of received light and AD converters each of which is provided in each of columns in the array. Each of the AD converters includes: a reference voltage generating unit (10) generating reference voltages; comparators (11a through 11c) comparing in parallel a current signal voltage which is one of signal voltages generated by the light receiving elements in the respective matrix columns with the reference voltages generated by the reference voltage generating unit; a digital signal generating circuit (23) generating a digital signal showing a result of the comparison and outputting the digital signal out of the AD converter.

Abstract: A microcomputer outputs correction data. A shading correction circuit performs a shading correction to a digital image signal using the correction data outputted from the microcomputer. A YC processing circuit generates a video signal from the digital image signal having undergone the shading correction, performs processing such as a gamma correction to the generated video signal, and outputs the video signal having undergone the processing such as the gamma correction.

Abstract: A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.

Abstract: Not only acute or chronic interstitial pneumonia and plumonary fibrosis but also chronic obstructive plumonary diseases, such as plumonary emphysema and chronic bronchitis, can be effectively prevented or treated by inhalation administration to the lung tissue of 2-{N-[4-(4-chlorobenzenesulfonylamino)butyl]-N-{3-[(4-isopropyl 2-thiazolyl)methoxy]benzyl}}-sulfamoylbenzoic acid or a pharmacologically acceptable salt thereof.

Abstract: An infrared sensor includes a plurality of reference pixel units 2 arranged in a matrix pattern and series capacitor elements 14 provided in a one-to-one correspondence with the reference pixel units 2. The reference pixel units 2 each include an output line 30, a reference capacitor element 13 connected via a switching element 17 between the output line and the ground, and a plurality of infrared-detecting capacitor elements 12 connected via associated switching elements 16 between the output line 30 and the ground. Each series capacitor element 14 is connected to the associated output line 30.

Abstract: A substrate transfer apparatus 24A of a component mounting equipment has linear motion guides 78A and 78B and substrate holding sliders 79A and 79B. The linear motion guides 78A and 78B extend in a transfer direction “C” from a first substrate taking-over position P1 to a second substrate taking-over position P2 and are opposed to each other with an interval G1 in a direction orthogonal to the transfer direction “C”. The substrate holding sliders 79A and 79B can move along the linear motion guides 78A and 78B, are opposed to each other with an interval G2 in the direction orthogonal to the transfer direction C, and releasably hold a lower surface of the substrate 12. The substrate holding sliders 79A and 79B move reciprocatingly in the transfer direction of the substrate 12 between the first and second substrate taking-over positions by an X-axis drive mechanism 87.

Abstract: A solid-state imaging device includes: a pixel unit which is composed of a plurality of pixel circuits arranged in a matrix, each pixel circuit outputting an analog signal by performing photoelectric conversion; an AD conversion circuit 15a provided for each of columns which sequentially converts a plurality of analog signals outputted from a plurality of ones of the pixel circuits in the column into a plurality of digital signals; a memory circuit 15b provided for each column which includes memories 32 and 33 and performs, in parallel, a process of storing each of the digital signals in one of the memories 32 and 33 and a process of outputting a digital signal stored in advance in the other; and data buses 17 connected to the memory circuit 15b in each column.

Abstract: An infrared sensor includes a plurality of reference pixel units 2 arranged in a matrix pattern and series capacitor elements 14 provided in a one-to-one correspondence with the reference pixel units 2. The reference pixel units 2 each include an output line 30, a reference capacitor element 13 connected via a switching element 17 between the output line and the ground, and a plurality of infrared-detecting capacitor elements 12 connected via associated switching elements 16 between the output line 30 and the ground. Each series capacitor element 14 is connected to the associated output line 30.