Abstract: A plasma processing apparatus includes a plasma processing chamber, a base in the plasma processing chamber, and an electrostatic chuck on the base. The electrostatic chuck includes a dielectric structure having a substrate support surface and a ring support surface, an electrostatic clamp electrode inside the dielectric structure, a bias electrode inside the dielectric structure and below the electrostatic clamp electrode, and at least one conductive structure at least partially located inside the dielectric structure. The dielectric structure has a through-hole extending through the dielectric structure from the substrate support surface or the ring support surface to a lower surface of the dielectric structure. The at least one conductive structure surrounds the through-hole and extends upward from a same level as the bias electrode in a height direction or from a higher level than the bias electrode.

Abstract: A substrate support is arranged in a processing container. The substrate support includes an electrostatic chuck provided with a first support surface for supporting a substrate, provided with a first electrode and a second electrode which are arranged in the electrostatic chuck sequentially from the first support surface, and made of a dielectric material, and a base configured to support the electrostatic chuck. The second electrode is arranged at a position having a distance to the first support surface that is equal to or less than a distance to the base. A voltage for attracting the substrate is applied to the first electrode and bias power is supplied to the second electrode.

Abstract: A semiconductor memory device is provided to suppress occurrence of disturbance regardless of the position of the activated word line. The semiconductor memory device includes a plurality of word lines, a bit line, a plurality of memory cells connected to the bit line and one of the plurality of word lines, a sense amplifier connected to the bit line, and a control portion. The control portion is configured to control timing of activating the sense amplifier. When a position of an activated word line among the plurality of word lines is closer to the sense amplifier, the control portion controls the timing of activating the sense amplifier to be delayed more.

Abstract: The present invention provides a memory system in which a semiconductor memory device can be accessed properly. The memory system includes a memory controller and a semiconductor memory device. The memory controller sends a command, an address, and first checking data to the semiconductor memory device. When the semiconductor memory device receives first response information that indicates that no error has been detected, it sends or receives read data or write data from the semiconductor memory device. When the semiconductor memory device receives the command, the address, and the first checking data, it uses the first checking data to detect errors in the command and the address, and sends the first reply information when no error is detected, and when no error is detected in the command and the address, it sends or receives read data or write data from the semiconductor memory device.

Abstract: A pseudo-static random access memory is provided herein, which may improve the speed of data transmission. After a first delay from a command and a row address being input in a first operation, the pseudo-static random access memory inputs or outputs the data in the memory cells corresponding to the input row address and the input column address, which includes a control unit controlling a delay in the second operation less than the initial delay when a specific condition is satisfied. The second operation is executed after the first operation.

Abstract: A semiconductor memory device is provided. The semiconductor memory device can suppress increases in power consumption. As a result, damage to the data normally caused by row hammer problem can be prevented. The semiconductor memory device includes a control unit. The control unit controls a refresh operation for a memory to be performed at any interval, wherein there are a plurality of possible intervals. When read/write access to the memory is required, the control unit controls the refresh operation for the memory to be performed with a shortest interval among the intervals, until a predetermined condition is met.

Abstract: Between a housing and a position ensuring member, provided are: a first locking mechanism that locks move of the position ensuring member at a standby position in an ensuring-operation direction toward a fitting assured position when a lever member is not at a completely fitted position; and a second locking mechanism that locks move of the position ensuring member at the fitting ensured position in an ensuring-release direction that is a reverse direction of the ensuring-operation direction when the lever member is at the completely fitted position. Between the lever member and the position ensuring member, provided is a locking release mechanism that releases a locked state of the position ensuring member with the first locking mechanism when the lever member comes at the completely fitted position.

Abstract: A temperature sensing circuit adapted for a memory device and including an oscillator, a count circuit, a control circuit, a sense circuit and a select circuit is provided. The oscillator provides an oscillation signal. The count circuit counts the oscillation signal to generate a first count signal, and generates a second count signal. The count circuit performs a logic operation on the second count signal to generate an enable signal and a sensing adjustment signal. The sense circuit generates a reference temperature voltage by dividing a reference voltage according to the sensing adjustment signal, and compares the reference temperature voltage and a monitor voltage according to the enable signal to generate a determination signal.

Abstract: A power supply control circuit that is able to reliably discharge to the internal power supply, even when the external power supply is cut off instantaneously. The power supply control circuit includes a voltage detection unit, an internal power supply generation unit, and a control unit. The voltage detection unit detects the voltage of the external power supply. The internal power supply generation unit generates the internal power supply, according to the external power supply. The control unit controls the discharging to the internal power supply according to at least the second control signal among the first control signal and the second control signal, when the detected voltage of the external power supply drops below the predetermined value.

Abstract: A semiconductor memory device is provided to suppress occurrence of disturbance regardless of the position of the activated word line. The semiconductor memory device includes a plurality of word lines, a bit line, a plurality of memory cells connected to the bit line and one of the plurality of word lines, a sense amplifier connected to the bit line, and a control portion. The control portion is configured to control timing of activating the sense amplifier. When a position of an activated word line among the plurality of word lines is closer to the sense amplifier, the control portion controls the timing of activating the sense amplifier to be delayed more.

Abstract: A service plug includes first and second main terminals, first and second signal terminals, a lock part that locks a lever to a second connector housing to regulate rotation of the lever in a state in which the lever is positioned at a half-engaged position between a completely engaged position and a non-engaged position, and a lock releasing part that releases a lock state. A configuration is made such that, as the lever is rotated from the completely engaged position to the half-engaged position, part of a plurality of contact pieces of the second main terminal that is brought into elastic contact with the first main terminal at a position displaced in an approaching direction, and the other part of the contact pieces maintains elastic contact at a position that is not displaced in the approaching direction and a separating direction.

Abstract: A connector housing includes a housing main body, a seal element configured to tightly seal a gap between an outer circumferential surface of an electric wire section of a terminal-equipped electric wire and an inner circumferential surface of the housing main body, and a rear holder which is a lid element configured to be attached to the housing main body so as to close the rear side opening and has a passage hole and a protrusion, the passage hole allowing the electric wire section to pass therethrough and having a larger opening area than a radial cross section area of the electric wire section, wherein the protrusion protrudes from a portion of an inner circumferential surface of the passage hole in a circumferential direction with a protrusion length, the protrusion length being adapted to an inner circumference position of a sealing through hole.

Abstract: A semiconductor memory device is provided. The semiconductor memory device can suppress increases in power consumption. As a result, damage to the data normally caused by row hammer problem can be prevented. The semiconductor memory device includes a control unit. The control unit controls a refresh operation for a memory to be performed at any interval, wherein there are a plurality of possible intervals. When read/write access to the memory is required, the control unit controls the refresh operation for the memory to be performed with a shortest interval among the intervals, until a predetermined condition is met.

Abstract: A power supply control circuit that is able to reliably discharge to the internal power supply, even when the external power supply is cut off instantaneously. The power supply control circuit includes a voltage detection unit, an internal power supply generation unit, and a control unit. The voltage detection unit detects the voltage of the external power supply. The internal power supply generation unit generates the internal power supply, according to the external power supply. The control unit controls the discharging to the internal power supply according to at least the second control signal among the first control signal and the second control signal, when the detected voltage of the external power supply drops below the predetermined value.

Abstract: Between a housing and a position ensuring member, provided are: a first locking mechanism that locks move of the position ensuring member at a standby position in an ensuring-operation direction toward a fitting assured position when a lever member is not at a completely fitted position; and a second locking mechanism that locks move of the position ensuring member at the fitting ensured position in an ensuring-release direction that is a reverse direction of the ensuring-operation direction when the lever member is at the completely fitted position. Between the lever member and the position ensuring member, provided is a locking release mechanism that releases a locked state of the position ensuring member with the first locking mechanism when the lever member comes at the completely fitted position.

Abstract: A temperature sensing circuit adapted for a memory device and including an oscillator, a count circuit, a control circuit, a sense circuit and a select circuit is provided. The oscillator provides an oscillation signal. The count circuit counts the oscillation signal to generate a first count signal, and generates a second count signal. The count circuit performs a logic operation on the second count signal to generate an enable signal and a sensing adjustment signal. The sense circuit generates a reference temperature voltage by dividing a reference voltage according to the sensing adjustment signal, and compares the reference temperature voltage and a monitor voltage according to the enable signal to generate a determination signal.

Abstract: A service plug includes first and second main terminals, first and second signal terminals, a lock part that locks a lever to a second connector housing to regulate rotation of the lever in a state in which the lever is positioned at a half-engaged position between a completely engaged position and a non-engaged position, and a lock releasing part that releases a lock state. A configuration is made such that, as the lever is rotated from the completely engaged position to the half-engaged position, part of a plurality of contact pieces of the second main terminal that is brought into elastic contact with the first main terminal at a position displaced in an approaching direction, and the other part of the contact pieces maintains elastic contact at a position that is not displaced in the approaching direction and a separating direction.

Abstract: A side lip has an intermediate thick portion. An inner circumferential side surface of the side lip has a side surface shape of a cone. An outer circumferential side surface of the side lip includes a first outer circumferential portion having a side surface shape of a cone in which the thickness gradually increases from a small diameter side toward a large diameter side, and a second outer circumferential portion having a side surface shape of a cone or a column in which the thickness gradually decreases. A thickness T1 of a distal end portion of the side lip is 0.5 T to 0.7 T, and a thickness T2 of the intermediate thick portion is 1.2 T to 1.5 T, relative to a thickness T of a base end portion of the side lip. An angle A of the distal end portion of the side lip is 10° to 30°.

Abstract: A connection terminal includes: a base portion; a folded portion folded back from a rear end of the base portion and extending toward a front side in the terminal fitting direction; a rise portion that is provided at the folded portion and rises in a direction away from the base portion; and a terminal contact portion extending from the rise portion toward the front side and being elastically deformable in a direction away from the base portion. The connection terminal is configured to receive a base portion of a counterpart connection terminal having a same configuration as that of the connection terminal such that the base portion of the counterpart connection terminal is inserted and elastically sandwiched between the base portion and the terminal contact portion of the connection terminal while the counterpart connection terminal is vertically inverted with respect to the connection terminal.

Abstract: A connection terminal includes: a tubular electric wire connection portion configured to be tightened and crimped to an end portion of an electric wire; a tubular intermediate portion which includes one end continuously formed at one open end of the electric wire connection portion and which has a cross-sectional shape larger than a cross-sectional shape of the electric wire connection portion; and a tubular terminal connection portion which is continuously formed at another end of the intermediate portion and which has a cross-sectional shape larger than the cross-sectional shape of the intermediate portion. The connection terminal further includes a terminal contact portion which protrudes inwardly from the terminal connection portion. A pair of terminals each formed in this manner and having basically the same shape may be joined to a pair of wires and connected to each other.