Abstract: A laminate that includes a semiconductor substrate; a support substrate that is light-transmissive; an adhesive layer; and a release layer provided between the semiconductor substrate and the support substrate, the laminate being used when the release layer absorbs light irradiated from a side of the support substrate and then the semiconductor substrate and the support substrate are separated from each other, wherein the release layer is formed from a release agent composition, the release agent composition contains a light-absorbing compound having a molecular weight of 2,000 or less, and when the light-absorbing compound is measured for an absorption spectrum in a range of 250 to 800 nm, the absorption spectrum has a local maximum value, which is a maximum absorbance in a range of 250 to 800 nm, between 250 nm and 350 nm.

Abstract: A composition for forming a protective film capable of forming a protective film excellent in resistance to a semiconductor wet etchant such as a basic hydrogen peroxide solution or an acidic hydrogen peroxide solution, which exhibits excellent resistance also to a resist solvent and can be effectively used also as a resist underlayer film-forming composition. A protective film-forming composition against a semiconductor wet etchant, including: (A) a compound represented by the following formula (A); and (B) a solvent. (In the formula (A), n represents an integer of 1 to 10, and when n is 2, X represents a sulfinyl group, a sulfonyl group, an ether group or a C2-50 divalent organic group, and when n is an integer other than 2, X represents a C2-50 n-valent organic group, Y represents —CH2CH(OH)CH2OC(?O)CH2(CH2)t—, —CH2CH(OH)CH2OC(?O)C(CN)(?CH)—, and t represents an integer of 1 to 6.

Abstract: Provided are a protective film that can completely cover the edge of a substrate (wafer) for semiconductor manufacturing via a simple coating method in the manufacture of a semiconductor device, a protective film-forming composition for forming the protective film, a wafer for semiconductor manufacturing that is manufactured using the protective film, and a method for manufacturing the wafer for semiconductor manufacturing and a semiconductor device. Also provided is a wafer edge protective film-forming composition for semiconductor manufacturing, the composition containing a solvent and a polymer or compound having a crosslinkable group. Preferably, the composition has a viscosity of 100 cps or less at 25° C. and is photosensitive. Preferably, the crosslinkable group is selected from the group consisting of an epoxy group, a (meth)acrylic group, a vinyl group, a carboxylic acid group, a thiol group, a silanol group, a cinnamoyl group, and a hydroxyl group.

Abstract: Provided is a photo-curable resin composition that is useful for the formation of a wafer edge part protection film for use in the production of a semiconductor. The photo-curable resin composition comprises: a compound containing a polycyclic aromatic hydrocarbon group derived from naphthalene, anthracene, phenanthrene, pyrene or the like and/or a polymer such as polyvinyl alcohol, polyacrylamide, a (meth)acrylic resin, polyamic acid, polyhydroxystyrene, a polyhydroxystyrene derivative, a copolymer of a polymethacrylate and maleic anhydride, an epoxy resin, a phenolic resin, a novolac resin, polyimide, cellulose, a cellulose derivative, starch, chitin, chitosan, gelatin, zein, a sugar-backbone polymeric compound, polyamide, polyethylene terephthalate, a polycarbonate, polyurethane, polysiloxane or the like; and a solvent. The composition has a viscosity of 100 cps or less at 25° C. and is cured with light having a wavelength of 170 to 800 nm.

Abstract: A silicon-containing resist underlayer film forming composition for forming a silicon-containing resist underlayer film to be used as an etching mask when a metal film containing at least one metal selected from the group consisting of Groups 6, 7, 8, and 9 of the periodic table of elements is dry-etched.

Abstract: A protective film-forming composition including good mask (protection) function against a wet etching liquid and a high dry etching rate during processing of semiconductor substrates, including good coverage even in stepped substrates, and from which flat films can be formed due to a small difference in film thickness after embedding; a protective film produced using said composition; a substrate with a resist pattern; and a method for manufacturing a semiconductor device. A protective film-forming composition which protects against a semiconductor wet etching liquid, wherein a reaction product (P) of a diepoxy compound (B) and an bifunctional proton-generating compound (C) contains a structure represented by formula (1) (in formula (1), Ar represents a C6-40 aryl group, n represents an integer of 2-10, —Y— represents—OCO—, —O— or —S—, and * represents the bonding site with the reaction product (P) molecule terminal). The protective film-forming composition further includes an organic solvent (S).

Abstract: Provided are: a composition for forming a coating film, the composition comprising (a) a polymer containing a structural unit represented by formula (1a) or (1b), and (b) a solvent including 51-99 mass % of water and 1-49 mass % of at least one organic solvent selected from the group consisting of propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether, methyl 2-hydroxyisobutyrate, ethyl 3-ethoxypropionate, and ethyl lactate; and a method for manufacturing a semiconductor device using the same.

Abstract: A composition for forming a protective film having excellent resistance to a wet etching solution for semiconductors during a lithographic process in the manufacture of semiconductors; a method of forming a resist pattern using said protective film; and a method for manufacturing a semiconductor device. This composition for forming a protective film against a wet etching solution for semiconductors includes: a compound or polymer which contains at least one among an acetal structure and an amide structure; and a solvent. The polymer is preferably a copolymer of: a compound (a) containing at least one acetal structure in a molecule; and a compound (b) containing at least one amide structure in a molecule.

Abstract: A semiconductor device manufacturing process, forming a multilayer structure of a metal oxide (e.g., copper oxide) and a resist underlayer film on a stepped metal substrate reduces exposure reflectance from the substrate, thereby reducing standing waves of the resist pattern (defects caused by reflection) and provides a favorable rectangular resist pattern on the substrate. A pattern-equipped substrate manufacturing method includes: a step for performing an oxidation treatment on a substrate containing metal on a surface thereof to form a metal oxide film on the substrate surface; a step for applying a resist on the metal oxide film and conducting baking to form a resist film; a step for exposing a semiconductor substrate covered by the metal oxide film and the resist; and a step for developing the exposed resist film and conducting patterning.

Abstract: A protective film-forming composition including good mask (protection) function against a wet etching liquid and a high dry etching rate during processing of semiconductor substrates, including good coverage even in stepped substrates, and from which flat films can be formed due to a small difference in film thickness after embedding; a protective film produced using said composition; a substrate with a resist pattern; and a method for manufacturing a semiconductor device. A protective film-forming composition which protects against a semiconductor wet etching liquid, wherein a reaction product (P) of a diepoxy compound (B) and an bifunctional proton-generating compound (C) contains a structure represented by formula (1) (in formula (1), Ar represents a C6-40 aryl group, n represents an integer of 2-10, —Y— represents —OCO—, —O— or —S—, and * represents the bonding site with the reaction product (P) molecule terminal). The protective film-forming composition further includes an organic solvent (S).

Abstract: A resist underlayer film-forming composition contains: (A) a compound having a partial structure represented by Formula (1). In Formula (1), R1 and R2 each denote a hydrogen atom, an alkyl group having 1-10 carbon atoms or an aryl group having 6-40 carbon atoms, X denotes an alkyl group having 1-10 carbon atoms, a hydroxyl group, an alkoxy group having 1-10 carbon atoms, an alkoxycarbonyl group having 1-10 carbon atoms, a halogen atom, a cyano group, a nitro group or a combination of these, Y denotes a direct bond, an ether bond, a thioether bond or an ester bond, n is an integer between 0 and 4, and * denotes a site of bonding to a residue of compound (A)); and a solvent.

Abstract: A protective film-forming composition which protects against a semiconductor wet etching solution, contains a solvent and a compound or polymer thereof containing at least one pair including two adjacent hydroxyl groups in a molecule thereof, and forms a protective film which can quickly be removed by dry etching and exhibits excellent resistance against a semiconductor wet etching solution during the lithographic process when producing semiconductors; a method for producing a resist pattern-equipped substrate which uses the protective film; and a method for producing a semiconductor device.

Abstract: A simple method for removing foreign substances that are formed on a substrate during a semiconductor device production process and a composition for forming a coating film for foreign substance removal, said coating film being used in the above-described method. A composition for forming a coating film for foreign substance removal, said composition containing a polymer and a solvent and being capable of forming a coating film that dissolves in a developer liquid, wherein: the polymer is selected from among phenolic novolacs, polyhydroxystyrene derivatives and carboxylic acid-containing polymers; and the polymer is contained in an amount of 50% by mass or more relative to the total solid content in the composition.

Abstract: Provided is a resist underlayer film-forming composition that is used in a lithographic process in semiconductor manufacturing and has excellent storage stability. The resist underlayer film-forming composition contains: a polymer having a disulfide bond in a main chain; a radical trapping agent; and a solvent. The radical trapping agent is preferably a compound having a ring structure or a thioether structure. The ring structure is preferably an aromatic ring structure having 6-40 carbon atoms or a 2,2,6,6-tetramethylpiperidine structure.

Abstract: Provided are a ligand-bearing substrate which has a surface at least partially coated with a polymer (P3) containing structural units represented by the formulae (1a) and (1b) (in the formulae, R1, R2, X, Y, L, Q1, Q2, Q3, m1, m2 and n are as described in the claims and description); a raw material for such a substrate; and a method for producing such substrates.

Abstract: A resist underlayer film forming composition contains a resin containing a unit structure represented by formula (1): [in formula (1), R1 represents a thiadiazole group which is optionally substituted with a C1-6 alkyl group optionally interrupted by a carboxy group, a C1-6 alkyl group optionally substituted with a hydroxyl group, or a C1-4 alkylthio group, and R2 represents a hydrogen atom or formula (2): (in formula (2), R1 is the same as defined above, and * represents a binding moiety)]. The resist underlayer film forming composition provides a resist underlayer film which has excellent solvent resistance, excellent optical parameters, an excellent dry etching rate, and excellent embeddability.

Abstract: A method includes applying a composition for forming a resist underlayer film to a substrate having a recess in a surface, and baking the composition for forming a resist underlayer film to form a resist underlayer film for filling at least the recess. The composition for forming a resist underlayer film has a copolymer having a structural unit of following formula (1), a cross-linkable compound, a cross-linking catalyst, and a solvent: wherein R1 and R2 are each independently a C1-3 alkylene group or a single bond, Z is an —O— group, a —S— group, or a —S—S— group, and Ar is an arylene group.

Abstract: A protective film-forming composition which protects against a semiconductor wet etching solution, contains a solvent and a compound or polymer thereof containing at least one acetal structure in a molecule thereof, and forms a protective film exhibiting excellent resistance against a semiconductor wet etching solution during the lithographic process when producing semiconductors; a method for producing a resist pattern-equipped substrate which uses the protective film; and a method for producing a semiconductor device.

Abstract: A protective film-forming composition including good mask (protection) function against a wet etching liquid and a high dry etching rate during processing of semiconductor substrates, including good coverage even in stepped substrates, and from which flat films can be formed due to a small difference in film thickness after embedding; a protective film produced using said composition; a substrate with a resist pattern; and a method for manufacturing a semiconductor device. A protective film-forming composition which protects against a semiconductor wet etching liquid, wherein a reaction product (P) of a diepoxy compound (B) and an bifunctional proton-generating compound (C) contains a structure represented by formula (1) (in formula (1), Ar represents a C6-40 aryl group, n represents an integer of 2-10, —Y— represents —OCO—, —O— or —S—, and * represents the bonding site with the reaction product (P) molecule terminal). The protective film-forming composition further includes an organic solvent (S).

Abstract: There is provided anti-reflective coating forming composition containing a reaction product of an isocyanuric acid compound having two or three 2,3-epoxypropyl groups with a benzoic acid compound. The anti-reflective coating obtained from the composition has a high preventive effect for reflected light, causes no intermixing with photoresists, can form a photoresist pattern having no footing at the lower part, and can use in lithography process by use of a light such as ArF excimer laser beam and F2 excimer laser beam, etc.