Abstract: A composition for forming a protective film against basic aqueous hydrogen peroxide solution, including a crosslinker having, in one molecule, two or more groups at least one selected from the group consisting of a glycidyl group, a terminal epoxy group, an epoxycyclopentyl group, an epoxycyclohexyl group, an oxetanyl group, a vinyl ether group, an isocyanate group, and a blocked isocyanate, a compound having a group of Formula (1): (wherein X1 is a substituent reacting with the crosslinker, R0 is a direct bond or a C1-2 alkylene group, X2 is a C1-2 alkyl group, C1-2 alkoxy group, or fluoro group, a is an integer of 0-2, b is an integer of 1-3, c is an integer of 0-4, and b and c satisfy a relational expression of 1?(b+c)?5) on a side chain or a terminal and having a weight average molecular weight of 800 or more, and an organic solvent.

Abstract: Provided are a ligand-bearing substrate which has a surface at least partially coated with a polymer (P3) containing structural units represented by the formulae (1a) and (1b) (in the formulae, R1, R2, X, Y, L, Q1, Q2, Q3, m1, m2 and n are as described in the claims and description); a raw material for such a substrate; and a method for producing such substrates.

Abstract: A method includes applying a composition for forming a resist underlayer film to a substrate having a recess in a surface, and baking the composition for forming a resist underlayer film to form a resist underlayer film for filling at least the recess. The composition for forming a resist underlayer film has a copolymer having a structural unit of following formula (1), a cross-linkable compound, a cross-linking catalyst, and a solvent: wherein R1 and R2 are each independently a C1-3 alkylene group or a single bond, Z is an —O— group, a —S— group, or a —S—S— group, and Ar is an arylene group.

Abstract: A protective film-forming composition which protects against a semiconductor wet etching solution, contains a solvent and a compound or polymer thereof containing at least one acetal structure in a molecule thereof, and forms a protective film exhibiting excellent resistance against a semiconductor wet etching solution during the lithographic process when producing semiconductors; a method for producing a resist pattern-equipped substrate which uses the protective film; and a method for producing a semiconductor device.

Abstract: A composition for forming a resist underlayer film that has a high dry etching rate, functions as an anti-reflective coating during exposure, and fills a recess having a narrow space and a high aspect ratio. A composition for forming a resist underlayer film has a copolymer having a structural unit of following formula (1), a cross-linkable compound, a cross-linking catalyst, and a solvent: wherein R1 and R2 are each independently a C1-3 alkylene group or a single bond, Z is an —O— group, a —S— group, or a —S—S— group, and Ar is an arylene group. The copolymer is synthesized by a reaction of a carboxyl group of a dicarboxylic acid compound having an —O— group, a —S— group, or a —S—S— group with an epoxy group of a diglycidyl ether compound having an arylene group.

Abstract: A novel photosensitive adhesive composition including the following components (A), (B), (C), and (D): Component (A): a polymer having a structural unit of the following formula (1) and a structure of the following formula (2) at a terminal, Component (B): a polymer having the structural unit of formula (1), and a carboxy group or hydroxy group at a terminal, Component (C): a radical photopolymerization initiator, and Component (D): a solvent, wherein the content by mass of the component (B) is larger than that of the component (A), (wherein X is a C1-6 alkyl group, a vinyl group, an allyl group, or a glycidyl group, m and n are each independently 0 or 1, Q is a divalent C1-16 hydrocarbon group, Z is a divalent C1-4 linking group, the divalent linking group being bonded to an —O— group in formula (1), and R1 is a hydrogen atom or a methyl group.

Abstract: A method for roughening a surface of a substrate, including: applying a composition containing inorganic particles and organic resin to the surface of the substrate and drying and curing the composition to form an organic resin layer; and etching the substrate by a solution containing hydrogen fluoride, hydrogen peroxide, or an acid, to roughen the surface. Preferably, the solution contains hydrogen fluoride and ammonium fluoride or hydrogen peroxide and ammonia, the resin layer contains a ratio of the particles to the resin of 5 to 50 parts by mass to 100 parts by mass, and the composition is a mixture of silica sol wherein silica is dispersed as the inorganic particles in organic solvent or titanium oxide sol wherein titanium oxide is dispersed, with a solution of the organic resin.

Abstract: A protective film-forming composition which protects against a semiconductor wet etching solution, contains a solvent and a compound or polymer thereof containing at least one pair including two adjacent hydroxyl groups in a molecule thereof, and forms a protective film which can quickly be removed by dry etching and exhibits excellent resistance against a semiconductor wet etching solution during the lithographic process when producing semiconductors; a method for producing a resist pattern-equipped substrate which uses the protective film; and a method for producing a semiconductor device.

Abstract: The present invention is to provide a cell culture vessel comprising a copolymer which contains a recurring unit containing an organic group of the following formula (a) and a recurring unit containing an organic group of the following formula (b) being coated onto a surface thereof, a method for manufacturing the same and a method for manufacturing a cell aggregate using the same (wherein Ua1, Ua2, Ub1, Ub2 and Ub3, and An? are as defined in the present specification and the claims).

Abstract: The invention provides a ligand-bonded fiber in which a ligand having affinity for a cell membrane receptor is immobilized on a fiber precursor, and a cell culture substrate capable of repeating ex vivo amplification of a cell expressing a cell membrane receptor by using the ligand-bonded fiber.

Abstract: A photosensitive resin composition which enables the achievement of a cured body that is further decreased in dielectric constant and dielectric loss tangent; a method for producing a cured relief pattern with use of this photosensitive resin composition; and a semiconductor device which is provided with this cured relief pattern. A negative photosensitive resin composition which contains 100 parts by mass of (A) a polyimide precursor that has a specific unit structure; and 0.1 to 20 parts by mass of (B) a radical photopolymerization initiator.

Abstract: A resist underlayer film forming composition contains a resin containing a unit structure represented by formula (1): [in formula (1), R1 represents a thiadiazole group which is optionally substituted with a C1-6 alkyl group optionally interrupted by a carboxy group, a C1-6 alkyl group optionally substituted with a hydroxyl group, or a C1-4 alkylthio group, and R2 represents a hydrogen atom or formula (2): (in formula (2), R1 is the same as defined above, and * represents a binding moiety)]. The resist underlayer film forming composition provides a resist underlayer film which has excellent solvent resistance, excellent optical parameters, an excellent dry etching rate, and excellent embeddability.

Abstract: A composition for forming a resist underlayer film that functions as an anti-reflective coating during exposure and can be embedded in a recess having a narrow space and a high aspect ratio, and has excellent resistance to an aqueous hydrogen peroxide solution. A resist underlayer film-forming composition containing a resin, a compound of the following Formula (1a) or (1b): wherein X is carbonyl group or methylene group, 1 and m are each independently an integer of 0 to 5 and satisfy a relational expression of 3?1+m 10, and n is an integer of 2 to 5, and a solvent, wherein the compound of Formula (1a) or (1b) is contained in an amount of 0.01% by mass to 60% by mass relative to the amount of the resin.

Abstract: A novel resist underlayer film forming composition containing a compound has a hydantoin ring. A resist underlayer film forming composition has a compound having at least two substituents of the following formula (1): (wherein R1 and R2 are each independently a hydrogen atom or a methyl group, and X1 is a C1-3 hydroxyalkyl group or a C2-6 alkyl group having one or two ether bonds in a main chain) in the molecule, and a solvent.

Abstract: A resist underlayer film-forming composition including a solvent and a copolymer including a structural unit of the following Formula (1): wherein X is a divalent chain hydrocarbon group having a carbon atom number of 2 to 10, and the divalent chain hydrocarbon group optionally has at least one sulfur atom or oxygen atom in a main chain, or optionally has at least one hydroxy group as a substituent; R is a chain hydrocarbon group having a carbon atom number of 1 to 10; and each n is 0 or 1.

Abstract: A composition for forming a resist underlayer film has excellent storage stability at normal temperature. A composition for forming a resist underlayer film for lithography including a nitrogen-containing compound having 2 to 6 substituents of the following Formula (1) which bond to nitrogen atoms in one molecule, a polymer, a compound that promotes a crosslinking reaction, and an organic solvent. The nitrogen-containing compound having 2 to 6 substituents of Formula (1) in one molecule is for example a glycoluril derivative of the following Formula (1A). In the formula, each R1 is a methyl group or an ethyl group, and R2 and R3 are independently a hydrogen atom, a C1-4 alkyl group, or phenyl group.

Abstract: A composition for forming protective films against aqueous hydrogen peroxide solutions, including: a compound of the following formula (1a) or formula (1b) or a compound having a substituent of the following formula (2) and having a molecular weight of 300 or more and less than 800 or a weight-average molecular weight of 300 or more and less than 800; and a solvent, the composition containing the compound of the formula (1a) or formula (1b) of 0.1% by mass to 60% by mass or the compound having the substituent of the formula (2) of 10% by mass to 100% by mass, relative to solids excluding the solvent: (wherein R1 is a C1-4 alkylene or alkenylene group or a direct bond, k is 0 or 1, m is an integer of 1 to 3, and n is an integer of 2 to 4.

Abstract: A simplified method for removing foreign matters formed on a substrate in a semiconductor device manufacturing process; and a composition for forming a coating film for foreign matter removal use, which can be used in the method. A coating film is formed on a semiconductor substrate using a composition preferably containing a polyamic acid produced from (a) a tetracarboxylic dianhydride compound and (b) a diamine compound having at least one carboxyl group or a polyamic acid produced from (a) a tetracarboxylic dianhydride compound, (b) a diamine compound having at least one carboxyl group and (c) a diamine compound, and then foreign matters occurring on the coating film are removed together with the coating film by the treatment with a developing solution.

Abstract: A resist underlayer film-forming composition capable of providing a resist underlayer film exerting a sufficient anti-reflection function particularly in a KrF process, a high solvent resistance and a high dry etching speed, and enables the formation of a photoresist pattern having a good cross-sectional shape. The composition includes a copolymer containing: structural unit (A) derived from a diepoxy compound; and structural unit (B) derived from a compound represented by formula (1) [wherein: A represents a benzene or cyclohexane ring; X represents a hydrogen atom, alkyl or alkoxy group having 1 to 10 carbon atoms and optionally substituted by a halogen atom, or an alkoxycarbonyl group having 2 to 11 carbon atoms; and Y represents —COOH or -L-NHCO—Z—COOH (wherein: Z represents an alkylene group having 3 to 10 carbon atoms and optionally substituted by an oxygen atom, sulfur atom or nitrogen atom; and L represents a single bond or a spacer)].

Abstract: There is provided a composition for forming a resist underlayer film for lithography that can be used as an underlayer anti-reflective coating that decreases the reflection of irradiated light during exposure from a semiconductor substrate toward the photoresist layer that is formed on the semiconductor substrate and in particular, can be suitably used as a flattening film for flattening a semiconductor substrate having a recess and a project by embedding, in a lithography process for production of a semiconductor device. A resist underlayer film-forming composition for lithography comprising (A) an alicyclic epoxy compound having an alicyclic skeleton and one or more epoxy groups, and a light absorption moiety, in the molecule, (B) a thermal acid generator, and (C) a solvent.