Abstract: A method for calculating a position of an image of an alignment mark formed on an object to be detected includes the steps of obtaining first information indicative of a center position in the alignment mark based on a detection signal, obtaining a waveform characteristic of the detection signal as second information, and correcting the first information based on the second information that has been obtained, and a measurement error of the center position of the alignment mark, which result from an optical system for detecting the alignment mark.

Abstract: A semiconductor device manufacturing apparatus management system includes a semiconductor device manufacturing apparatus which operates in accordance with a parameter, an obtaining device for obtaining evaluation values of an operation result of the semiconductor device manufacturing apparatus corresponding to a plurality of parameter values of the parameter, a holding device for holding the evaluation values obtained by the obtaining device for each object to be processed by the semiconductor device manufacturing apparatus, and an optimization device for analyzing the evaluation values held by the holding device. The optimization device optimizes the parameter on the basis of at least one of a sensitivity representing a change degree of the evaluation values upon the change in the parameter, and a variation amount of the evaluation values for each object to be processed.

Abstract: There are disclosed insulated ultrafine powder comprising electroconductive ultrafine powder which is in the form of sphere, spheroid or acicular each having a minor axis in the range of 1 to 100 nm and an insulating film applied thereto; a process for producing the same which is capable of covering the surfaces of the insulated ultrafine powder with the insulating film having a thickness in the range of 0.3 to 100 nm without causing any clearance or vacancy; and a resin composite material which uses the same. A high dielectric constant of the material is assured by adding a small amount of insulated ultrafine powder wherein an insulating film is applied to the electroconductive ultrafine powder, while maintaining the processability and moldability that are the characteristics inherent in a resin material.

Abstract: A method for detecting disposition of plurality of exposure shot areas of an object that is to be exposed includes a first detection step of detecting the alignment marks on the object, an evaluation step of evaluating randomness of the alignment marks based on the detection result by the first detection step, a determination step of determining a number smaller than the total number of alignment marks on the object based on the evaluation result by the evaluation step, and a second detection step of detecting the disposition of the plurality of exposure shot areas by detecting alignment marks corresponding to the number determined by the determination step.

Abstract: Signal processing is set at step S51. Image information concerning an alignment mark is acquired and calculated from an alignment detecting optical system at step S53. The amount of positional deviation is calculated at step S54 by the signal processing, which was set at step S51, from the alignment-mark image information acquired at step S53. A combination of a shot (position information) and signal processing for which a residual error Ri will be minimized is obtained at step S57, a wafer is positioned in a projection optical system at step S58 by a wafer stage based upon AGA parameters calculated in accordance with the conditions of this minimizing combination, and the pattern on a reticle is transferred to the wafer by exposure at step S59.

Abstract: A position detection method for detecting the position of marks comprises the following steps: a step for detecting first information relating to the position of the mark by detecting light from the mark under first measurement conditions; a step for detecting second information relating to the position of the mark by detecting light from the mark under second measurement conditions which differ from the first measurement conditions; and a step for detecting the position of the mark based on the first and second information, thereby providing a high-precision position detecting method and device serving as an alignment or overlaying detection device in an exposure apparatuses used in manufacturing semiconductor devices, wherein position detection precision is not lost even in the event that the alignment marks are not symmetrical or there are irregularities in the non-symmetry of multiple alignment marks within the same wafer.

Abstract: A two-dimensional image of an alignment mark 30 is acquired by an alignment scope 15 at step S61, and the two-dimensional image acquired at step S61 is converted to a light-intensity signal line by line at step S62. A selection as to whether each line signal is valid or unnecessary is made at step S63. The amount of positional deviation of the alignment mark 30 is calculated using only valid line signals at step S64.

Abstract: A method of detecting a relative positional deviation between first and second objects by use of a first alignment mark provided on the first object and a second alignment mark provided on the second object, wherein the first alignment mark includes a first grating lens and a second grating lens having a mirror image of the first grating lens, and the alignment mark includes a third grating lens and a fourth grating lens having a mirror image of the third grating lens. The incidence position information of first light coming via the first grating lens and the third grating lens and incident upon a first predetermined plane, and the incidence position of second light coming via the second grating lens and the fourth grating lens and incident upon a second predetermined plane, are detected, on the basis of which the relative positional deviation between the first and second objects in a predetermined direction is detected.

Abstract: A management apparatus which manages a parameter for an industrial device acquires AGA measurement results obtained by operating the industrial device with an operation job parameter value and non-operation job parameter value. An inspection apparatus acquires an “inspection result” obtained by inspecting the result of operating the industrial device in the operation job. A change in inspection result upon a change in parameter value is estimated on the basis of the AGA measurement result and inspection result. A variable which minimizes (extreme) both or at least one of the sensitivity (slope) of the inspection result upon a change in parameter value and variations (3 &sgr;) in inspection result between objects to be processed (e.g., wafers) is set as an optimal parameter.

Abstract: A system which manages a plurality of semiconductor exposure apparatuses holds TIS information representing the characteristics of the respective semiconductor exposure apparatuses. In a semiconductor exposure apparatus, a parameter value is optimized on the basis of AGA measurement results obtained using a set parameter value and another parameter value and AGA measurement estimation results obtained by virtually changing the parameter value. Whether to reflect the optimized parameter value in another industrial device is decided on the basis of the TIS information. If it is decided to reflect the optimized parameter value, the parameter value of another semiconductor exposure apparatus is optimized by the optimized parameter value. In this manner, the optimization result of a parameter value by a given industrial device can be properly reflected in another industrial device, realizing efficient parameter value setting.

Abstract: An exposure apparatus performs AGA measurement by using a predetermined sample shot group formed on a wafer, and decides an alignment parameter. The exposure apparatus executes wafer alignment processing and exposure processing by using the alignment parameter. The exposure apparatus notifies a central processing unit (4) of AGA measurement results and the alignment parameter. An overlay inspection apparatus measures an actual exposure position on the exposed wafer, and notifies the central processing unit of the measurement result. The central processing unit (4) optimizes alignment processing on the basis of the AGA measurement results, alignment parameter, and actually measured exposure position.

Abstract: This invention provides a computer apparatus which is connected to an exposure apparatus capable of executing AGA measurement by using a set parameter value and another parameter value and executing acquisition processing of acquiring measurement results, and an overlay inspection apparatus for inspecting the processing result obtained with the set parameter value in the exposure apparatus, and which executes optimization processing of optimizing the set parameter value on the basis of the processing results acquired in acquisition processing and the inspection result value by the inspection apparatus. The computer apparatus causes the inspection apparatus to acquire and accumulate inspection result values, and evaluates variations in processing results on the basis of the accumulated inspection results. Based on the evaluation result, the computer apparatus decides a frequency at which acquisition processing in the semiconductor exposure apparatus is executed.

Abstract: A foreign substance inspecting method includes the steps of detecting a height of a foreign substance attaching to a periphery of a wafer by irradiating a light beam from a light source to the wafer, thereby detecting the presence/absence of a foreign substance with not less than a predetermined height. The predetermined height is set to be substantially equal to a gap between the wafer and a mask at a wafer exposure.

Abstract: An armature for a rotating electrical machine and more particularly to an insulating cover for the pole teeth around which the windings are formed that has good strength against the winding without risk of damage of the insulator due to increased thickness in the highly stressed areas.

Abstract: An X-ray mask structure for use in X-ray lithography includes an X-ray transmission film to be disposed opposed to a workpiece in X-ray exposure, the X-ray transmission film having an X-ray absorptive material corresponding to a pattern to be printed on the workpiece, and a thin film covering at least a portion of the X-ray transmission film, the thin film having an anti-reflection function with respect to alignment light to be projected to the thin film for direct or indirect detection of relative positional deviation between the mask structure and the workpiece.

Abstract: A compound represented by the formula (I) 1

Abstract: A compound of the formula (I): 1

Abstract: An alignment method includes the steps of (i) in order to expose a pattern of a first object onto a second object, measuring positions of a plurality of marks on the second object with a mark detection device and aligning the first and second objects with each other, and (ii) measuring shapes of the plurality of marks on the second object, thereby obtaining offsets that should be reflected in the measured values of the mark detection device. The shapes of the plurality of the marks are measured with a shape measurement device with no possibility of coming into contact with the mark, through calibration with reference to a shape measurement device with a possibility of coming into contact with the mark.

Abstract: An apparatus control system controls the operation of an industrial apparatus while the apparatus is operating in order to achieve operating efficiency without stopping the apparatus. The apparatus control system sets parameters for operating the industrial apparatus, inspects the results of operating the apparatus according to the parameters thus set, evaluates the operating results according to a first parameter value and a second parameter value different from the first parameter value, determines new parameter values, revises the first and second parameters to the newly determined values, and continues to operate the industrial apparatuses according to the revised parameter values.

Abstract: An armature for a rotating electrical machine and more particularly to an insulating cover for the pole teeth around which the windings are formed that has good strength against the winding without risk of damage of the insulator due to increased thickness in the highly stressed areas.