Abstract: A method for manufacturing ozone ice that is improved for its storage stability is provided. In the method, ice 11 including oxygen gas g2 as gas bubbles b is produced and the produced ice 11 is irradiated with ultraviolet radiation, then the oxygen gas g2 in the ice 11 is ozonized to manufacture ozone ice 1.

Abstract: A manufacturing method for a bonded structure, in which a semiconductor device is bonded to an electrode by a bonding portion, the method including: first mounting a solder ball, in which a surface of a Bi ball is coated with Ni plating, on the electrode that is heated to a temperature equal to or more than a melting point of Bi; second pressing the solder ball against the heated electrode, cracking the Ni plating, spreading molten Bi on a surface of the heated electrode, and forming a bonding material containing Bi-based intermetallic compound of Bi and Ni; and third mounting the semiconductor device on the bonding material.

Abstract: The present invention provides a semiconductor component having a joint structure including a semiconductor device, an electrode disposed opposite the semiconductor device, and a joining material which contains Bi as main component and connects the semiconductor device to the electrode. Since the joining material contains a carbon compound, joint failure due to the difference in linear expansion coefficient between the semiconductor device and the electrode can be reduced compared with conventional materials. The joining material which contains Bi as main component enables provision of a joint structure in which a semiconductor device and an electrode are joined by a joint more reliable than a conventional joint.

Abstract: A layer (105) of a metal having a crystal lattice different from the crystal lattice of a joining material (106) mainly containing Bi is placed on a surface (102b) of a semiconductor device (102), and a layer (104) of an element having a positive value of heat of formation of a compound with the joining material (106) is placed between the layer (105) of the metal having the crystal lattice different from the crystal lattice of the joining material (106) and the surface (102b) of the semiconductor device (102), thereby preventing the component of the layer (105) of the metal having the crystal lattice different from the crystal lattice of the joining material (106) from being diffused in the semiconductor device (102).

Abstract: A joint structure joins an electronic element 12 included in an electronic component to an electrode 14 included in that electronic component. The joint structure includes a solder layer, which contains 0.2 to 6% by weight of copper, 0.02 to 0.2% by weight of germanium and 93.8 to 99.78% by weight of bismuth, a nickel layer provided between the solder layer and the electrode, and a barrier layer provided between the nickel layer and the solder layer. Here, the barrier layer is formed so as to have an average thickness of from 0.5 to 4.5 ?m after the electronic element and the electrode are joined by the solder layer.

Abstract: A semiconductor device includes a die pad having a surface on which a first solder bonding layer is formed, and made of metal; and a semiconductor element fixed on the first solder bonding layer on the die pad by a solder material made mostly of bismuth. The first solder bonding layer is made of a softer material than the solder material, a recess is formed in a part of the first solder bonding layer by pressing the solder material against the first solder bonding layer, and the solder material partially fills the recess.

Abstract: The present invention relates to ferromagnetic metal particles having a bulk density (?a) of not more than 0.25 g/cm3, a process for producing the above ferromagnetic metal particles and a magnetic recording medium comprising a non-magnetic substrate; a non-magnetic undercoat layer formed on the non-magnetic substrate which comprises non-magnetic particles and a binder resin; and a magnetic recording layer formed on the non-magnetic undercoat layer which comprises magnetic particles and a binder resin, wherein the above ferromagnetic metal particles were used as the magnetic particles.

Abstract: The present invention relates to a process for producing magnetic metal particles for magnetic recording, comprising: heat-treating goethite particles having an aluminum content of 4 to 50 atom % in terms of Al based on whole Fe to obtain hematite particles; and heat-reducing the hematite particles at a temperature of 200 to 600° C., the goethite particles being obtained by adding a peroxodisulfate to a reaction solution comprising: a ferrous salt aqueous solution and a mixed alkali aqueous solution comprising: an alkali hydrogen carbonate aqueous solution or alkali carbonate aqueous solution and an alkali hydroxide aqueous solution before initiation of an oxidation reaction of the reaction solution, and then conducting the oxidation reaction.

Abstract: A method of manufacturing a semiconductor mounting board includes providing a base member and linear conductive members formed of metallic wires. The conductive members are constructed so that they extend linearly between a semiconductor element-mounting face and a circuit board-mounting face of a base member, and are integrally molded within the base member. For this purpose, a resin material for forming the base member is injected into a mold wherein the conductive members are linearly arranged beforehand.

Abstract: In a semiconductor device in which a semiconductor chip is mounted on a die pad, an electrode on the surface of the chip and a lead arranged around the die pad are connected with a wire, and the semiconductor chip, the wire and a wire connecting portion of the lead are collectively resin molded with a sealing resin, a step part is formed at a tip end portion of at least one lead so that the tip end becomes lower than the rest of the step part, and a plurality of wires connected to a same or different electrodes on the semiconductor chip are connected to each step of the step part. As a plurality of wires bonded to a same lead can be separated vertically, a stable connection becomes possible and each lead can be set to have a minimum width necessary for bonding one wire, allowing the lead to be arranged closer to the semiconductor chip correspondingly.

Abstract: In a halftone phase shifting photomask 108, having a pattern of halftone phase shifting film 102 containing at least chromium and fluorine, the halftone phase shifting film is heat-treated at a temperature between 250° C. and 500° C. so that a change of the optical property of the film produced by the application of excimer laser for exposure to the film is decreased.

Abstract: A method of manufacturing a semiconductor mounting board includes providing a base member and linear conductive members formed of metallic wires. The conductive members are constructed so that they extend linearly between a semiconductor element-mounting face and a circuit board-mounting face of a base member, and are integrally molded within the base member. For this purpose, a resin material for forming the base member is injected into a mold wherein the conductive members are linearly arranged beforehand.

Abstract: A soft X-ray reduction projection exposure system includes a light source for generating a soft X-ray beam of a wavelength of a 4 through 20 nm band; a reflecting mask on which a desired pattern is formed; an illumination optical system for irradiating the reflecting mask with the soft X-ray beam; a reduction projection optical system for imaging the pattern of the reflecting mask on a wafer; and a controlling section for controlling a partial pressure of a gas of a carbon compound to be 1.33×10−8 Pa or less in at least one of a first region where the illumination optical system is disposed, a second region where the reflecting mask is disposed and a third region where the reduction projection optical system is disposed.

Abstract: The invention relates to a halftone phase shift photomask whose transmittance and phase angle remain unchanged even when irradiated with an excimer laser used for exposure over an extended period of time, and a blank therefor, and provides a halftone phase shift mask 108 comprising a pattern of halftone phase shift film 102 containing at least chromium and fluorine on a transparent substrate 101, wherein optical characteristic changes upon irradiation with an exposure excimer laser have been reduced by patterning a film irradiated with light 109 having a wavelength substantially absorbed by halftone phase shift film 102.

Abstract: A soft X-ray reduction projection exposure system includes a light source for generating a soft X-ray beam of a wavelength of a 4 through 20 nm band; a reflecting mask on which a desired pattern is formed; an illumination optical system for irradiating the reflecting mask with the soft X-ray beam; a reduction projection optical system for imaging the pattern of the reflecting mask on a wafer; and a controlling section for controlling a partial pressure of a gas of a carbon compound to be 1.33×10−8 Pa or less in at least one of a first region where the illumination optical system is disposed, a second region where the reflecting mask is disposed and a third region where the reduction projection optical system is disposed.

Abstract: A pattern forming material includes a binary copolymer represented by the following general formula or a ternary or higher copolymer obtained by further polymerizing the binary copolymer with another group: wherein R1 indicates a hydrogen atom or an alkyl group; R2 and R3 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group or together indicate a cyclic alkyl group, a cyclic alkenyl group, a cyclic alkyl group having a phenyl group or a cyclic alkenyl group having a phenyl group; R4 indicates a hydrogen atom or an alkyl group; x satisfies a relationship of 0<x<1; and y satisfies a relationship of 0<y<1.

Abstract: A pattern forming material includes a binary copolymer represented by the following general formula or a ternary or higher copolymer obtained by further polymerizing the binary copolymer with another group: wherein R1 indicates a hydrogen atom or an alkyl group; R2 and R3 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group or together indicate a cyclic alkyl group, a cyclic alkenyl group, a cyclic alkyl group having a phenyl group or a cyclic alkenyl group having a phenyl group; R4 indicates a hydrogen atom or an alkyl group; x satisfies a relationship of 0<x<1; and y satisfies a relationship of 0<y<1.

Abstract: A pattern forming material includes a binary copolymer represented by the following general formula or a ternary or higher copolymer obtained by further polymerizing the binary copolymer with another group: wherein R1 indicates a hydrogen atom or an alkyl group; R2 and R3 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group or together indicate a cyclic alkyl group, a cyclic alkenyl group, a cyclic alkyl group having a phenyl group or a cyclic alkenyl group having a phenyl group; R4 indicates a hydrogen atom or an alkyl group; x satisfies a relationship of 0<x<1; and y satisfies a relationship of 0<y<1.

Abstract: In a halftone phase shifting photomask 108, having a pattern of halftone phase shifting film 102 containing at least chromium and fluorine, the halftone phase shifting film is heat-treated at a temperature between 250° C. and 500° C.

Abstract: A resin-molded semiconductor device includes: signal leads; a die pad with a central portion elevated above a peripheral portion thereof; support leads, each including a raised portion higher in level than the other portions; and DB paste for use in die bonding. All of these members are encapsulated within a resin encapsulant. The lower part of each of these signal leads protrudes downward out of the resin encapsulant and functions as an external electrode. Each of the support leads is provided with two bent portions to cushion the deforming force. By forming a half-blanked portion in the die pad, the central portion is elevated above the peripheral portion, thus preventing the semiconductor chip from being hampered by the support leads. Accordingly, the size of the semiconductor chip mounted can be selected from a broader range and the humidity resistance of the device can also be improved.