Abstract: A semiconductor mounting board include a base member and linear conductive members formed of metallic wires. The conductive members are constructed so that they extend linearly between a semiconductor element-mounting face and a circuit board-mounting face of a base member, and are integrally molded within the base member. For this purpose, a resin material for forming the base member is injected into a mold wherein the conductive members are linearly arranged beforehand.

Abstract: A pattern forming material includes a binary copolymer represented by the following general formula or a ternary or higher copolymer obtained by further polymerizing the binary copolymer with another group: 1

Abstract: A pattern forming material includes a binary copolymer represented by the following general formula or a ternary or higher copolymer obtained by further polymerizing the binary copolymer with another group: 1

Abstract: A pattern forming material includes a binary copolymer represented by the following general formula or a ternary or higher copolymer obtained by further polymerizing the binary copolymer with another group: wherein R1 indicates a hydrogen atom or an alkyl group; R2 and R3 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group or together indicate a cyclic alkyl group, a cyclic alkenyl group, a cyclic alkyl group having a phenyl group or a cyclic alkenyl group having a phenyl group; R4 indicates a hydrogen atom or an alkyl group; x satisfies a relationship of 0<x<1; and y satisfies a relationship of 0<y<1.

Abstract: A pattern forming material includes a binary copolymer represented by the following general formula or a ternary or higher copolymer obtained by further polymerizing the binary copolymer with another group: 1

Abstract: Conductive members formed of metallic wires constructed so that they extend linearly between a semiconductor element-mounting face and a circuit board-mounting face of a base member are integrally molded with the base member. For this purpose, a resin material for forming the base member is injected into a mold wherein the conductive members are linearly arranged beforehand.

Abstract: A resin-molded semiconductor device includes: signal leads; a die pad with a central portion elevated above a peripheral portion thereof; support leads, each including a raised portion higher in level than the other portions; and DB paste for use in die bonding. All of these members are encapsulated within a resin encapsulant. The lower part of each of these signal leads protrudes downward out of the resin encapsulant and functions as an external electrode. Each of the support leads is provided with two bent portions to cushion the deforming force. By forming a half-blanked portion in the die pad, the central portion is elevated above the peripheral portion, thus preventing the semiconductor chip from being hampered by the support leads. Accordingly, the size of the semiconductor chip mounted can be selected from a broader range and the humidity resistance of the device can also be improved.

Abstract: In a multi-beam drawing method in which drawing is performed with a plurality of light-emitting devices (LDs), it is detected whether any LD is damaged. Of a plurality of partial LD lines obtained by partitioning at a damaged LD or LDs, the partial LD line including the largest number of LDs is selected as an effective LD line for use in drawing. Spiral correction is performed by dividing image data to be supplied to the LDs into a plurality of virtual small images parallel to the sub-scanning direction which are shifted in a reverse direction to the sub-scanning direction.

Abstract: A resin-molded semiconductor device includes: signal leads; a die pad with a central portion elevated above a peripheral portion thereof; support leads, each including a raised portion higher in level than the other portions; and DB paste for use in die bonding. All of these members are encapsulated within a resin encapsulant. The lower part of each of these signal leads protrudes downward out of the resin encapsulant and functions as an external electrode. Each of the support leads is provided with two bent portions to cushion the deforming force. By forming a half-blanked portion in the die pad, the central portion is elevated above the peripheral portion, thus preventing the semiconductor chip from being hampered by the support leads. Accordingly, the size of the semiconductor chip mounted can be selected from a broader range and the humidity resistance of the device can also be improved.

Abstract: A pattern forming material includes a binary copolymer represented by the following general formula or a ternary or higher copolymer obtained by further polymerizing the binary copolymer with another group: ##STR1## wherein R.sub.1 indicates a hydrogen atom or an alkyl group; R.sub.2 and R.sub.3 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group or together indicate a cyclic alkyl group, a cyclic alkenyl group, a cyclic alkyl group having a phenyl group or a cyclic alkenyl group having a phenyl group; R.sub.4 indicates a hydrogen atom or an alkyl group; x satisfies a relationship of 0<x<1; and y satisfies a relationship of 0<y<1.

Abstract: A resin-encapsulated semiconductor device producing apparatus includes resin encapsulating part for encapsulating, into a unitary structure, a semiconductor-chip holding zone of a lead frame or a substrate which holds a semiconductor chip, this encapsulation being made with an encapsulating resin material. The resin encapsulating part has first and second holding members for holding the lead frame or the substrate such that the first and second holding members are opposite to each other through the lead frame or the substrate. At least one of the first and second holding members has a housing concave formed opposite to the holding zone, the housing concave being capable of housing the encapsulating resin material. A resin thickness regulating member for regulating the thickness of the encapsulating resin material is removably disposed on the bottom of the housing concave.

Abstract: A module is provided for a packaged IC designed to radiate heat by sealing the packaged IC. At least outer lead parts the packaged IC which are mounted on an electronic circuit board are sealed by a sealing material of a high thermal conductivity to form a sealing part.

Abstract: A pattern forming material includes a binary copolymer represented by the following general formula or a ternary or higher copolymer obtained by further polymerizing the binary copolymer with another group: ##STR1## wherein R.sub.1 indicates a hydrogen atom or an alkyl group; R.sub.2 and R.sub.3 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group or together indicate a cyclic alkyl group, a cyclic alkenyl group, a cyclic alkyl group having a phenyl group or a cyclic alkenyl group having a phenyl group; R.sub.4 indicates a hydrogen atom or an alkyl group; x satisfies a relationship of 0<x<1; and y satisfies a relationship of 0<y<1.

Abstract: A patterning material includes a polymer represented by a general formula: ##STR1## wherein R.sub.1 indicates a hydrogen atom or an alkyl group; R.sub.2 indicates a hydrophobic protecting group which is easily desorbed through a function of an acid; R.sub.3 indicates a hydrogen atom or an alkyl group; R.sub.4 and R.sub.5 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group, or together indicate a cyclic alkyl group, a cyclic alkenyl group or a cyclic alkyl or alkenyl group having a phenyl group; x satisfies a relationship of 0<x<1; and y satisfies a relationship of 0<y<1.

Abstract: A BPSG film is formed on a semiconductor substrate and caused to reflow under an atmosphere of flowing Ar gas. Then, a chemically amplified resist is applied to the surface of the BPSG film to form a resist film, which is exposed to the irradiation of a KrF excimer laser through a mask. Since no lone pair of electrons exists on the surface of the BPSG film, an acid in the resist film is not deactivated and hence a reaction is evenly induced by an acid catalyst. After the development of the resist film, a resist pattern having an excellent profile with no footing is obtained.

Abstract: A first correlation is obtained which is a correlation between latent image height produced after exposure on a resist layer, and resist pattern linewidth for a given length of develop time. Additionally, a second correlation is obtained which is a correlation between develop time for each exposure energy dose and resist pattern linewidth. The height of a latent image produced on an actually exposed resist layer is determined. From the first correlation, an estimated resist pattern linewidth, which is a resist pattern linewidth corresponding to a latent image height and to a given length of develop time, is found. From the second correlation, an estimated exposure energy dose, which is an exposure energy dose corresponding to a given length of develop time and to an estimated resist patten linewidth, is found.

Abstract: A first correlation is obtained which is a correlation between latent image height produced after exposure on a resist layer, and resist pattern linewidth for a given length of develop time. Additionally, a second correlation is obtained which is a correlation between develop time for each exposure energy dose and resist pattern linewidth. The height of a latent image produced on an actually exposed resist layer is determined. From the first correlation, an estimated resist pattern linewidth, which is a resist pattern linewidth corresponding to a latent image height and to a given length of develop time, is found. From the second correlation, an estimated exposure energy dose, which is an exposure energy dose corresponding to a given length of develop time and to an estimated resist pattern linewidth, is found.

Abstract: A first correlation is obtained which is a correlation between latent image height produced after exposure on a resist layer, and resist pattern linewidth for a given length of develop time. Additionally, a second correlation is obtained which is a correlation between develop time for each exposure energy dose and resist pattern linewidth. The height of a latent image produced on an actually exposed resist layer is determined. From the first correlation, an estimated resist pattern linewidth, which is a resist pattern linewidth corresponding to a latent image height and to a given length of develop time, is found. From the second correlation, an estimated exposure energy dose, which is an exposure energy dose corresponding to a given length of develop time and to an estimated resist patten linewidth, is found.

Abstract: A resist film is formed on a semiconductor substrate by using a chemical amplification resist which generates an acid in response to the radiation of KrF excimer laser light and which reacts with the acid. If the resist film is irradiated with the KrF excimer laser light through a mask, the acid is generated in the surface of an exposed portion of the resist film, so that the surface of the exposed portion is made hydrophilic by the acid. If water vapor is supplied to the surface of the resist film, water is diffused from the surface of the exposed portion into a deep portion. If vapor of methyltriethoxysilane is sprayed onto the surface of the resist film in air at a relative humidity of 95%, an oxide film with a sufficiently large thickness is selectively formed on the surface of the exposed portion.

Abstract: A resist film is formed on a semiconductor substrate by using a chemical amplification resist which generates an acid in response to the radiation of KrF excimer laser light and which reacts with the acid. If the resist film is irradiated with the KrF excimer laser light through a mask, the acid is generated in the surface of an exposed portion of the resist film, so that the surface of the exposed portion is made hydrophilic by the acid. If water vapor is supplied to the surface of the resist film, water is diffused from the surface of the exposed portion into a deep portion. If vapor of methyltriethoxysilane is sprayed onto the surface of the resist film in air at a relative humidity of 95%, an oxide film with a sufficiently large thickness is selectively formed on the surface of the exposed portion.