Abstract: In one embodiment, a thermal energy storage power plant includes a thermal accumulator to accumulate thermal energy and heat a thermal medium with the thermal energy, and a steam generator to generate steam using the thermal medium. The plant further includes a first path to convey the thermal medium from the accumulator to the generator, and a second path to convey the thermal medium from the generator to the accumulator. The plant further includes an auxiliary module provided on the first path, and a bypass path to convey the thermal medium flowing through the second path to the auxiliary module by bypassing the accumulator, wherein the auxiliary module is supplied with a first thermal medium from the accumulator via the first path, supplied with a second thermal medium from the second path via the bypass path, and supplies a third thermal medium to the generator via the first path.

Abstract: An image acquisition unit 20 acquires a group of time-series images captured by a camera mounted at the observation vehicle. A speed difference estimation unit 24 estimates a speed difference between the target object and the observation vehicle by using a time-series change in a region representing the target object captured in the group of time-series images. The determination unit 28 determines whether the target object or the observation vehicle is in a dangerous state based on the speed difference.

Abstract: In one embodiment, a heat storage power generation system includes a heater to heat first fluid, and a heat storage to be heated by the first fluid, and heat second fluid with heat stored in the heat storage. The system further includes a generator to generate electric power by using the second fluid, a heating controller to control heating of the first fluid by the heater, and a power generation controller to control power generation performed by the generator. The heating controller controls the heating of the first fluid, based on two or more limit values among a first limit value related to an amount of energy consumption by the heater, a second limit value related to temperature of the first fluid, a third limit value related to internal temperature of the heat storage, and a fourth limit value related to a change rate of the internal temperature.

Abstract: A vacuum pump (100) includes a rotor (22b), a rotor blade (13), and a magnetic-bearing-integrated stator (22a) including a coil. The rotor includes a pair of spacer members (29), a support member (27), a permanent magnet (26), and a protective ring (28), and in an axial direction of a rotary shaft (11), the support member has a mechanical strength higher than that of the protective ring.

Abstract: An object of the present invention is to provide a semiconductor element capable of being manufactured in small size, easily and at a low cost and obtaining a large on-current, a semiconductor integrated circuit, and a production method for the semiconductor element. A semiconductor element 10 has an element structure of a tunnel field-effect transistor. A channel part 13 formed of an indirect transition-type semiconductor is formed as a plate-like shaped portion having one end connected to a source part 14 and the other end connected to a drain part 15.

Abstract: In a p-type substrate region of a semiconductor substrate, an n-type source region, an n-type drain region, a p-type body region having an impurity concentration higher than an impurity concentration of the p-type substrate region, a p-type body contact region having an impurity concentration higher than the impurity concentration of the p-type body region, and an n-type drift region having an impurity concentration lower than an impurity concentration of the n-type drain region are formed. A gate electrode is formed on the semiconductor substrate via a gate dielectric film. The semiconductor substrate includes a first region and a second region that are alternately disposed in an extending direction of the gate electrode. A width of the p-type body region overlapping with the gate electrode in the second region is smaller than a width of the p-type body region overlapping with the gate electrode in the first region.

Abstract: A recording medium and server provide a game that improves the interest in and taste of a battle event and increases the interest in and real enjoyment of the entire game. The recording medium provides a game including a predetermined battle event comprising at least one battle. In a battle event of this game, game contents are displayed in a first field, and a player selects therefrom a game content to be used for a battle with an enemy character. The first field is replenished with another game content alternative to the selected game content as needed so that the player can further select an additional game content therefrom.

Abstract: A semiconductor device includes: a wiring board, a chip stack provided above the wiring board and including a first semiconductor chip; a second semiconductor chip provided between the wiring board and the first semiconductor chip; a first adhesive layer provided between the first semiconductor chip and the second semiconductor chip and on the second semiconductor chip; and a sealing insulation layer including a first part and a second part, the first part covering the chip stack, and the second part extending between the wiring board and the first semiconductor chip.

Abstract: A recording medium and server provide a game that improves the interest in and taste of a battle event and increases the interest in and real enjoyment of the entire game. The recording medium provides a game including a predetermined battle event comprising at least one battle. In a battle event of this game, game contents are displayed in a first field, and a player selects therefrom a game content to be used for a battle with an enemy character. The first field is replenished with another game content alternative to the selected game content as needed so that the player can further select an additional game content therefrom.

Abstract: The present invention causes a low-rigidity disk to be supported by a backup disk (a deformation prevention portion), and therefore can prevent the low-rigidity disk from being deformed due to an inflow of hydraulic oil to between the low-rigidity disk and a disk adjacent thereto according to an increase in a pressure in a cylinder upper chamber during an extension stroke, and can improve the durability of the low-rigidity disk.

Abstract: The present invention provides a liquid crystal display that can reduce occurrence of quality problems and improve adhesive strength between substrates. The present invention is a liquid crystal display including a first substrate, a second substrate, and a seal. The first substrate includes a shift register monolithically formed on an insulating substrate, a plurality of bus lines, a first end, and a display region. The shift register includes a plurality of multistage-connected unit circuits and wiring connected to the plurality of unit circuits, and is arranged in a region between the first end and the display region. At least one of the unit circuits includes a clock terminal, an output terminal, an output transistor, a second transistor, and a bootstrap capacitor. The output transistor and the bootstrap capacitor are arranged in a region between the first end and one of the wiring and the second transistor.

Abstract: A pressurizing device includes: a mounting base; an upper mold which pressurizes the target object mounted on the mounting base from above; a heating lower mold which is a lower mold heated in advance by a heater, and which heats the target object under pressure by sandwiching the mounting base with the upper mold; a cooling lower mold which is a lower mold cooled in advance by a cooler, and which cools the target object under pressure by sandwiching the mounting base with the upper mold; and a control device which switches the lower mold that contributes to the pressurization of the target object to the heating lower mold or the cooling lower mold in accordance with the status of progress of the pressurization process for the target object.

Abstract: Disclosed is a compound of formula (I): wherein all symbols are defined in the description. Also disclosed are pharmaceutical compositions comprising the compounds, methods of making the compounds, kits comprising the compounds, and methods of using the compounds, compositions and kits for treatment of disorders associated with TREK-1, TREK-2 or both TREK-1 and TREK-2 dysfunction in a mammal.

Abstract: The present invention provides a liquid crystal display that can reduce occurrence of quality problems and improve adhesive strength between substrates. The present invention is a liquid crystal display including a first substrate, a second substrate, and a seal. The first substrate includes a shift register monolithically formed on an insulating substrate, a plurality of bus lines, a first end, and a display region. The shift register includes a plurality of multistage-connected unit circuits and wiring connected to the plurality of unit circuits, and is arranged in a region between the first end and the display region. At least one of the unit circuits includes a clock terminal, an output terminal, an output transistor, a second transistor, and a bootstrap capacitor. The output transistor and the bootstrap capacitor are arranged in a region between the first end and one of the wiring and the second transistor.

Abstract: The present invention provides a liquid crystal display that can reduce occurrence of quality problems and improve adhesive strength between substrates. The present invention is a liquid crystal display including a first substrate, a second substrate, and a seal. The first substrate includes a shift register monolithically formed on an insulating substrate, a plurality of bus lines, a first end, and a display region. The shift register includes a plurality of multistage-connected unit circuits and wiring connected to the plurality of unit circuits, and is arranged in a region between the first end and the display region. At least one of the unit circuits includes a clock terminal, an output terminal, an output transistor, a second transistor, and a bootstrap capacitor. The output transistor and the bootstrap capacitor are arranged in a region between the first end and one of the wiring and the second transistor.

Abstract: The invention provides a spin qubit-type semiconductor device capable of achieving both high-speed spin manipulation and high integration, and an integrated circuit for the spin qubit-type semiconductor device.

Abstract: To suppress a leakage current caused by a gate of a tunnel field effect transistor included in a silicon spin quantum bit device, the silicon spin quantum bit device is provided including a tunnel field effect transistor having a gate, a source, and a drain, a quantum gate operation mechanism for spin control, which is provided under the tunnel field effect transistor, and an inter-qubit coupler for coupling a channel of the tunnel field effect transistor with a channel of a tunnel field effect transistor included in another quantum bit device. Further, the gate is made wider in width than the channel and is partly formed on the inter-qubit coupler.

Abstract: In a LDMOSFET 100, an “STI structure 11” provided in a drain region including a high concentration drain region 10 and a drift region 12 including the high concentration drain region 10 has a slit region 11A extending in a x-direction, and in plan view, the “STI structure 11” is interposed between the slit region 11A and the high concentration drain region 10.

Abstract: There is formed a semiconductor device including, as the uppermost-layer wiring of the multilayer wiring layer, a plurality of first wirings, a second wiring, a plurality of first dummy wirings, a second dummy wiring, and a passivation film covering these wirings. The passivation film is patterned by etching with a photoresist film used as a mask, the plurality of first wirings and the plurality of first dummy wirings close thereto are densely formed, and the second dummy wiring is formed so as to surround a periphery of the second wiring sparsely formed directly above an analog circuit portion.

Abstract: The present invention provides a liquid crystal display that can reduce occurrence of quality problems and improve adhesive strength between substrates. The present invention is a liquid crystal display including a first substrate, a second substrate, and a seal. The first substrate includes a shift register monolithically formed on an insulating substrate, a plurality of bus lines, a first end, and a display region. The shift register includes a plurality of multistage-connected unit circuits and wiring connected to the plurality of unit circuits, and is arranged in a region between the first end and the display region. At least one of the unit circuits includes a clock terminal, an output terminal, an output transistor, a second transistor, and a bootstrap capacitor. The output transistor and the bootstrap capacitor are arranged in a region between the first end and one of the wiring and the second transistor.