Abstract: A recording medium and server provide a game that improves the interest in and taste of a battle event and increases the interest in and real enjoyment of the entire game. The recording medium provides a game including a predetermined battle event comprising at least one battle. In a battle event of this game, game contents are displayed in a first field, and a player selects therefrom a game content to be used for a battle with an enemy character. The first field is replenished with another game content alternative to the selected game content as needed so that the player can further select an additional game content therefrom.

Abstract: A non-humidified proton-conductive membrane according to the present invention includes a polymer and a proton-conductive substance. The polymer includes a glassy or crystalline first site having a glass-transition temperature or melting temperature higher than the service temperature of the proton-conductive membrane and a second site capable of forming a noncovalent bond. The proton-conductive substance includes a proton-releasing/binding site capable of noncovalently binding to the second site of the polymer and a proton coordination site capable of coordinating to protons, the proton-releasing/binding site and the proton coordination site being included in different molecules that interact with each other or being included in the same molecule. A proton-conductive mixed phase that includes the second site to which the proton-releasing/binding site of the proton-conductive substance is bound and the proton-conductive substance is lower than the service temperature of the proton-conductive membrane.

Abstract: A semiconductor device includes a semiconductor substrate including a first epitaxial layer having a first surface and a second surface, a second epitaxial layer, a buried region formed across the first epitaxial layer and the second epitaxial layer, and a gate electrode. The second epitaxial layer includes a drain region, a source region, a body region, a drift region, a first region, and a second region. The first region is formed below at least the drain region. The second region has first and second ends in a channel length direction. The first end is located between the body region and the drain region in the channel length direction. The second region extends from the first end toward the second end such that the second end extends below at least the source region. An impurity concentration of the second region is greater than an impurity concentration of the first region.

Abstract: A blade includes an edge to be pressed against an end portion of a carrier film to fold the end portion upwards from a sheet. A clamp mechanism peels the carrier film off from the sheet by moving while clamping the upwardly folded end portion of the carrier film.

Abstract: To provide a semiconductor integrated device capable of a gate screening test with no need for any additional circuit and without adding any gate screening terminal. The semiconductor integrated device includes a gate drive unit configured to drive the gate of a voltage controlled semiconductor element and a regulator configured to supply a gate drive voltage to the gate drive unit. The regulator includes an external connection terminal capable of receiving a gate screening voltage for the voltage controlled semiconductor element in a gate screening test.

Abstract: A recording medium and server provide a game that improves the interest in and taste of a battle event and increases the interest in and real enjoyment of the entire game. The recording medium provides a game including a predetermined battle event comprising at least one battle. In a battle event of this game, game contents are displayed in a first field, and a player selects therefrom a game content to be used for a battle with an enemy character. The first field is replenished with another game content alternative to the selected game content as needed so that the player can further select an additional game content therefrom.

Abstract: A transmitting and receiving circuit that transmits and receives signals using coaxial cables includes an input/output terminal that delivers and receives signals, a first port, a second port, a switch, and a ceramic-based electro-static discharge protector. The first port transfers a transmitted signal in a first transmission frequency band width and a received signal in a first reception frequency band width. The second port transfers a transmitted signal in a second transmission frequency band width and a received signal in a second reception frequency band width. The switch connects a common port to one of the first port and the second port. The common port is connected to the input/output terminal on one end of the common port and to the switch on the other end. The electro-static discharge protector is connected between the common port and the ground potential.

Abstract: An insulated gate device drive apparatus for driving an insulated gate device by using a charging current outputted from a totem-pole output circuit constituted by a high-side output transistor and a low-side output transistor. The insulated gate device drive apparatus includes a charging current correction circuit configured to perform correction to increase the charging current that is decreased by an increased voltage drop of high-side wiring resistance between a power supply and the high-side output transistor.

Abstract: There are provided a polyester resin for toner which has a sufficiently low TVOC, can be produced with high productivity, and can produce toner having excellent durability; and toner containing the polyester resin for toner. The polyester resin for toner has a TVOC of 380 ppm or less and includes a component derived from ethylene glycol, a hydrocarbon group having 12 carbon atoms or more, and a titanium element.

Abstract: A recording medium and server provide a game that improves the interest in and taste of a battle event and increases the interest in and real enjoyment of the entire game. The recording medium provides a game including a predetermined battle event comprising at least one battle. In a battle event of this game, game contents are displayed in a first field, and a player selects therefrom a game content to be used for a battle with an enemy character. The first field is replenished with another game content alternative to the selected game content as needed so that the player can further select an additional game content therefrom.

Abstract: A driving circuit that drives an insulated-gate semiconductor device. The driving circuit includes a constant-current generation circuit and a discharge circuit. The constant-current generation circuit has first and second transistors forming a current mirror, and a constant-current circuit connected to the drain of the first transistor for providing a constant current to the current mirror. The discharge circuit is connected to a gate of the insulated-gate semiconductor device and the drain of the second transistor, and includes a third transistor. The discharge circuit is configured to draw out a current injected into the gate of the insulated-gate semiconductor device by inputting a driving signal to the gate of the third transistor, and correct a metal-oxide-semiconductor (MOS) size of the third transistor so as to adjust an amount of a current that flows via the drain and the source of the third transistor to ground.

Abstract: A gas-liquid separator according to an embodiment of the present invention separates a mobile phase containing a gas and a liquid into a gas and a liquid. The gas-liquid separator according to the embodiment of the present invention includes an introduction flow channel to which a mobile phase is introduced, and a plurality of discharge flow channels connected to the introduction flow channel. A gas and a liquid are discharged from a discharge port of the discharge flow channel.

Abstract: A drive circuit for an insulated-gate semiconductor element includes a current source which generates a current to be supplied to a gate of the insulated-gate semiconductor element, a current output circuit which controls supply of the current generated by the current source to the gate of the insulated-gate semiconductor element in accordance with a drive signal, an output current control circuit which controls a magnitude of the current generated by the current source in accordance with a control voltage according to an operating temperature of the insulated-gate semiconductor element, and a control voltage detection terminal which is provided in the output current control circuit and enables detection of the control voltage from outside.

Abstract: According to the present invention, privacy of an operator of a terminal device is protected during and after authentication of the operator. The terminal device includes: a display section (39); a camera (20) configured so that an image capturing direction of the camera (20) is different from a direction outwardly extending from a surface on which the display section (39) is provided; an inclination sensor (22) configured to obtain an inclination of the terminal device (1); and a control section (10), the control section (10) being configured to: set a display-limited state in which display of the display section (39) is limited; carry out, in the display-limited state, authentication based on an image captured by the camera (20); and cancel the display-limited state in a case where (i) the authentication has been completed and it is determined that the inclination has changed by more than a prescribed value.

Abstract: A gas-liquid separator according to an embodiment of the present invention separates a mobile phase containing a gas and a liquid into a gas and a liquid. The gas-liquid separator according to the embodiment of the present invention includes an introduction flow channel to which a mobile phase is introduced, and a plurality of discharge flow channels connected to the introduction flow channel. A gas and a liquid are discharged from a discharge port of the discharge flow channel.

Abstract: In one embodiment, a plant control apparatus controls a power plant, which includes a gas turbine, a generator driven by the gas turbine, an exhaust heat recovering boiler to generate first steam using heat of exhaust gas from the gas turbine, a steam turbine driven by the first steam, and a clutch to connect a first shaft connected to the gas turbine and generator with a second shaft connected to the steam turbine. The apparatus includes a starting module to start the gas turbine and generator while holding the steam turbine in a stop state, when the clutch is in a released state. The apparatus further includes a warming module to warm the steam turbine by supplying second steam from equipment different from the boiler to the steam turbine in parallel with the starting of the gas turbine and generator, when the clutch is in a released state.

Abstract: A semiconductor device according to one embodiment includes a semiconductor substrate having a first surface, an insulating isolation film disposed at the first surface, and a gate electrode. The semiconductor substrate has a source region, a drain region, a drift region, and a body region. The insulating isolation film has a first portion disposed inside the drift region in plan view, a second portion protruding from the first portion in a direction toward the source region, and a third portion protruding from the first portion in the direction toward the source region and sandwiching the drift region between the second portion and the third portion. The gate electrode faces a portion of the body region sandwiched between the source region and the drift region with being insulated from the portion. The gate electrode is disposed so as to extend over the second portion and the third portion.

Abstract: A recessed portion is formed in a top surface of an isolation insulation film filling an isolation trench between a p+ source region and a p+ drain region. A p? drift region is located below the isolation trench and connected to the p+ drain region. A gate electrode fills the recessed portion. An n-type impurity region is located below the p? drift region and directly below the recessed portion.

Abstract: A first p type semiconductor region is provided between an n type drift region surrounding a drain region and an n type buried region, and a second p type semiconductor region is provided between the first p type semiconductor region and a p type well region surrounding a source region so as to overlap the first p type semiconductor region and the p type well region. Negative input breakdown voltage can be ensured by providing the first p type semiconductor region over the n type buried region. Further, potential difference between the source region and the first p type semiconductor region can be increased and the hole extraction can be performed quickly. Also, a path of hole current flowing via the second p type semiconductor region can be ensured by providing the second p type semiconductor region. Thus, the on-breakdown voltage can be improved.

Abstract: Disclosed is a compound of formula (I): wherein all symbols are defined in the description. Also disclosed are pharmaceutical compositions comprising the compounds, methods of making the compounds, kits comprising the compounds, and methods of using the compounds, compositions and kits for treatment of disorders associated with TREK-1, TREK-2 or both TREK-1 and TREK-2 dysfunction in a mammal.