Abstract: A QD is a Cd-free quantum dot including a core and a shell and configured to emit blue light. The core at least contains Zn and Se. The shell has a film thickness in a range from 0.5 nm to 3 nm, contains Zn, Se, and S in a boundary portion adjacent to the core, and contains Zn and S in an outermost portion.

Abstract: An X-ray diagnosis apparatus according to one embodiment includes an imaging system, a display, processing circuitry and system control circuitry. The imaging system includes an X-ray tube that generates an X-ray, an X-ray diaphragm that restricts an irradiation range of the X-ray, an X-ray detector that detects the X-ray, and a couch on which a subject is to be laid for irradiation with the X-ray. The display displays an X-ray image with numerical values indicating positions on the X-ray image generated by X-ray imaging of the subject by the imaging system. The processing circuitry recognizes a numerical value based on a collected user's utterance with respect to the numerical values. The system control circuitry performs control of the imaging system in accordance with a position indicated by the recognized numerical value among the numerical values.

Abstract: A flash heating part including a plurality of flash lamps is provided over a chamber for receiving a semiconductor wafer therein, and an auxiliary heating part including a plurality of laser diodes and a plurality of VCSELs (Vertical Cavity Surface Emitting Lasers) is provided under the chamber. During the preheating of the semiconductor wafer, an optical element irradiates the entire surface of the semiconductor wafer with light emitted from the laser diodes with a uniform illuminance distribution while the VCSELs irradiate a peripheral portion of the semiconductor wafer with highly directional light. The laser diodes, which irradiate the semiconductor wafer with relatively intense light with a wavelength shorter than 1 ?m, are capable of heating the semiconductor wafer efficiently to a high temperature. The light irradiation from the VCSELs provides a uniform in-plane temperature distribution of the semiconductor wafer.

Abstract: An HVAC system is provided. Embodiments of the present disclosure generally relate to an HVAC system in which multiple indoor units are coupled to central outdoor unit, where at least one of the indoor units is configured to provide conditioned air through ductwork and at least one indoor unit is configured to provide conditioned air without ductwork. Moreover, a gas furnace can be provided in the system, for harsher environments that benefit from more robust heating. Additional systems, devices, and methods are also disclosed.

Abstract: It is an object to provide a method for efficiently producing an N-alkylmaleimide-based polymer that has an excellent optical characteristic, excellent heat resistance, and excellent mechanical strength. A method for producing an N-alkylmaleimide-based polymer in accordance with an aspect of the present invention includes using an oil-soluble radical polymerization initiator to carry out suspension polymerization, in an aqueous medium in the presence of at least one dispersant selected from the group consisting of a nonionic compound having no hydrogen bonded to oxygen or nitrogen, a polyacrylate salt, and a polyalkylene glycol, with respect to a monomer mixture consisting of 20% by weight to 100% by weight of N-alkylmaleimide and 0% by weight to 80% by weight of other copolymerizable monomers, the N-alkylmaleimide being represented by the following general formula (1): where R represents a C1-C12 linear alkyl group, a C3-C12 branched alkyl group, or a C3-C6 cyclic alkyl group.

Abstract: A wiring substrate includes an insulating layer, a conductor layer formed on the insulating layer and including a conductor pad having a rectangular planar shape, and a solder resist layer formed on the insulating layer such that the solder resist layer is covering the conductor layer formed on the insulating layer. The solder resist layer has an opening formed such that the opening is exposing 50% or more of an area of a surface of the conductor pad on the opposite side with respect to the insulating layer and exposing a side surface and the surface of the conductor pad at side portions of a peripheral edge of the conductor pad and that the solder resist layer is covering the side surface and the surface of the conductor pad at one or more of corner portions of the peripheral edge of the conductor pad.

Abstract: A compressor module includes: an evaporator configured to evaporate a refrigerant of a vapor compression refrigeration cycle; a liquid storage configured to store the refrigerant in a liquid phase; a compressor configured to suction and compress the refrigerant; and a flow passage forming member to which the evaporator, the liquid storage and the compressor are installed. The flow passage forming member forms at least a portion of a flow passage of the refrigerant. The compressor is positioned on a lower side of the flow passage forming member, and the flow passage of the refrigerant includes a suction-side refrigerant flow passage, through which the refrigerant in a gas-phase to be suctioned into the compressor flows. The suction-side refrigerant flow passage has a rising portion that rises upward as the rising portion approaches the compressor.

Abstract: A media processing apparatus includes a slit insertable a sheet bundle of multiple sheets, a sheet-bundle holder, a liquid applier, a press binder, and a controller. The sheet-bundle holder holds the sheet bundle and detects the thickness of the sheet bundle. The liquid applier applies liquid to the sheet bundle. The press binder presses and binds the sheet bundle to perform press-binding process. The controller causes the sheet-bundle holder to hold the sheet bundle and detect the thickness of the sheet bundle, determines whether to cause the liquid applier to apply liquid to the sheet bundle based on the thickness of the sheet bundle, causes the liquid applier to apply the liquid to the sheet bundle when it is determined that the thickness of the sheet bundle is equal or larger than a prescribed thickness, and causes the press binder to press and bind the sheet bundle.

Abstract: A binder and a slurry suitable for use in the production of an electrode in a sulfide-based solid-state battery. The binder contains sulfide-based solid electrolyte particles, and is a fluorine-containing elastomer in which resin end functional groups satisfy: 0.01?([—CH2OH]+[—COOH])/([—CH3]+[—CF2H]+[—CH2OH]+[—CH2I]+[—OC(O)RH]+[—COOH]?0.25 where R represents an alkyl group with 1 to 20 carbon atoms. Also disclosed is an electrode including an electrode active material layer formed using the slurry and a lithium-ion secondary solid state battery including the electrode.

Abstract: A control system for a HVAC system for a structure and including a blower that flows air over an indoor heat exchanger. The control system may include a first input device, a first sensor, and a processor in electronic communication with the first input device, the first sensor, and the blower of the HVAC system. The first input device may be operable to accept a zoning mode selection. The first sensor may be sensor operable to measure a first temperature at a first location within the structure. The processor may be programmed to determine a cooling or heating demand on the HVAC system based on an input temperature and the first measured temperature. The processor may be further programmed to adjust an air flow rate produced by the blower based on the demand on the HVAC system and the zoning mode selection.

Abstract: In order to solve a conventional problem that it is not possible to manage partial content in a webpage as a block and execute processing on the block, a webpage processing apparatus includes: a block information storage unit in which one or more pieces of block information each having a block identifier for identifying a block, which is partial content in a webpage, and location identifying information for specifying a location of the block in the webpage are stored; a block processing unit that executes block processing, which is processing regarding a block specified with block information, using location identifying information contained in any one of the one or more pieces of block information; and a result output unit that outputs a block processing result, which is a result of the block processing. Accordingly, it is possible to manage a block, which is partial content in a webpage, and execute processing on the block.

Abstract: An HVAC system is provided. Embodiments of the present disclosure generally relate to an HVAC system in which a first controller is configured to provide a communicating protocol to a first HVAC component and a second controller is configured to receive a communicating protocol from the first controller and output an on/off protocol to a second HVAC component.

Abstract: An observation control device is applicable to a detector installed onboard a spacecraft for performing observation. The observation control device includes an orthogonal direction control unit configured to move an observation range in a direction orthogonal to a travel direction of the spacecraft, the observation range being a range observed by the detector, and a travel direction control unit configured to move the observation range in the travel direction of the spacecraft.

Abstract: An Sm—Fe—N-based magnetic powder includes particles containing Sm, Fe, and N as main components. The powder has a composition wherein a molar ratio of Sm to Fe (Sm/Fe) is 0.09 or more and 0.25 or less, a molar ratio of N to Fe (N/Fe) is 0.06 or more and 0.30 or less, and a Ca content in the powder is 0.002 mass % or less. When a cumulative 10% particle diameter is represented by D10, a cumulative 50% particle diameter is represented by D50, and a cumulative 90% particle diameter is represented by D90 in a volume-based particle size distribution according to a laser diffraction/scattering method, D50 is 2.0 to 11.0 ?m, and D10, D50, and D90 satisfy a relationship of the following formula: (D90?D10)/D50<1.10. The Sm—Fe—N-based magnetic powder is advantageous in improving coercive force, containing few impurities, and improving the performance and manufacturability of a bonded magnet.

Abstract: A display device includes: a substrate temperature obtainer that obtains a substrate temperature of a substrate of a display panel; a power obtainer that obtains an amount of power used by a plurality of segmented regions of the display panel, based on image data displayed on the display panel; a first increased temperature deriver that derives an increased temperature of a panel surface of the display panel based on the amount of power used by the plurality of segmented regions; and a surface temperature estimator that estimates a temperature of the panel surface based on the substrate temperature and the increased temperature.

Abstract: A treatment planning system that generates treatment planning for irradiating a target with a particle beam, includes an arithmetic processing device that sets at least two or more irradiation patterns for one treatment planning, calculates a plurality of predicted dose distributions for each irradiation pattern based on a target dose set for each region for at least one region including a region of the target, and calculates an index for evaluating validity of the irradiation pattern based on the plurality of predicted dose distributions.

Abstract: A treatment planning system is configured to create a treatment planning for radiotherapy and includes a processing device and a memory. The memory stores a plurality of calculation models, and the processing device uses at least two of the plurality of calculation models to calculate calculation values of biological effect indices representing an effect of radiotherapy with respect to a condition for radiotherapy, and searches for the condition so that at least two of the calculation values to be calculated approach a predetermined target value.

Abstract: A semiconductor device includes a first nitride semiconductor layer and a second nitride semiconductor layer provided above the first nitride semiconductor layer and forming a two-dimensional electron gas between the first nitride semiconductor layer and the second nitride semiconductor layer. Above the second nitride semiconductor layer, a source electrode and a drain electrode electrically connected to the two-dimensional electron gas, and a gate electrode arranged between the source electrode and the drain electrode are provided. Between the gate electrode and the source electrode, a first oxide layer and a second oxide layer provided above the first oxide layer are formed.

Abstract: There are provided an inexpensive copper powder, which has a low content of oxygen even it has a small particle diameter and which has a high shrinkage starting temperature when it is heated, and a method for producing the same. While a molten metal of copper heated to a temperature, which is higher than the melting point of copper by 250 to 700° C. (preferably 350 to 650° C. and more preferably 450 to 600° C.), is allowed to drop, a high-pressure water is sprayed onto the heated molten metal of copper in a non-oxidizing atmosphere (such as an atmosphere of nitrogen, argon, hydrogen or carbon monoxide) to rapidly cool and solidify the heated molten metal of copper to produce a copper powder which has an average particle diameter of 1 to 10 ?m and a crystallite diameter Dx(200) of not less than 40 nm on (200) plane thereof, the content of oxygen in the copper powder being 0.7% by weight or less.

Abstract: A semiconductor device includes a substrate, a semiconductor layer, an element region, and fin transistors. The substrate includes a principal surface. The semiconductor layer is formed as a surface layer or on the principal surface of the substrate, the surface layer being the principal surface of the substrate. The semiconductor layer has a crystal structure in which an angle between two of crystal orientations with equivalent relationships on a crystal plane having a correspondence with the principal surface of the substrate is 60 degrees or 120 degrees. The element region includes unit element regions formed on the principal surface of the substrate. The fin transistors are formed in the semiconductor layer, in the respective unit element regions. The fin transistors radially extend from a center toward an outer periphery of the element region. Adjacent two of the fin transistors have a spacing with a 60° angle or a 120° angle.