Abstract: A transparent base plate supports a first compensating layer, which is adapted to compensate for a phase difference due to liquid crystal molecules having undergone normal orientation in a liquid crystal layer of a TN liquid crystal display device, and second compensating layers, which are adapted to compensate for the phase difference due to the liquid crystal molecules having undergone hybrid orientation in the liquid crystal layer. Each of the second compensating layers is constituted of one of oblique incidence vacuum deposited films, which are formed on opposite surfaces of the base plate with oblique incidence vacuum evaporation of an inorganic material. An azimuthal angle and/or a polar angle of a direction of vacuum evaporation with respect to a plane of vacuum evaporation is set to be different between the second compensating layers.

Abstract: A phase difference plate which comprises one sheet of polymer film containing a compound having a rod-shaped molecular structure and exhibiting a maximum absorption wavelength (?max) of less than 250 nm in an ultraviolet spectrum of its solution and which exhibits a retardation value as measured at a wavelength of 450 nm (Re450) of 60 to 135 nm and a retardation value as measured at a wavelength of 590 nm (Re590) of 100 to 170 nm, where the relationship: Re590?Re450?2 nm is satisfied. The phase difference plate functions as a ?/4 plate.

Abstract: A phase difference plate which comprises one sheet of polymer film containing a compound having a rod-shaped molecular structure and exhibiting a maximum absorption wavelength (?max) of less than 250 nm in an ultraviolet spectrum of its solution and which exhibits a retardation value as measured at a wavelength of 450 nm (Re450) of 60 to 135 nm and a retardation value as measured at a wavelength of 590 nm (Re590) of 100 to 170 nm, where the relationship: Re590?Re450?2 nm is satisfied. The phase difference plate functions as a ?/4 plate.

Abstract: A process for producing a piezoelectric device constituted by a first electrode, at least one second electrode, and a piezoelectric film sandwiched between the first electrode and the at least one second electrode so that an electric field can be applied to the piezoelectric film. First, a seed layer of a material containing at least one element is formed on a substrate, and then the first electrode is formed on the seed layer. Next, the at least one element is diffused through the first electrode so that the at least one element precipitates on a surface of the first electrode on the opposite side to the seed layer, and then the piezoelectric film is formed on the first electrode.

Abstract: A method of manufacturing a ceramic film by using an AD method, by which a film having good crystallinity can be fabricated without using a high-temperature process. The method of manufacturing a ceramic film by using an aerosol including the steps of: (a) dispersing ceramic raw material powder containing an amorphous component in a gas to generate an aerosol; and (b) supplying the aerosol generated at step (a) into a chamber in which a substrate is placed and depositing the ceramic raw material powder on the substrate to form a ceramic film.

Abstract: A piezoelectric device having a piezoelectric film formed over a substrate through an electrode by vapor phase deposition using plasma, and constituted by columnar crystals of one or more perovskite oxides Pb(Tix, Zry, Mz)O3 (0<x<1, 0<y<1, 0?z<1, x+y+z=1) which extend nonparallel to the substrate. M represents one or more of Sn, Nb, Ta, Mo, W, Ir, Os, Pd, Pt, Re, Mn, Co, Ni, V, and Fe. The maximum diameters of the end faces of the columnar crystals are distributed from a value not exceeding 100 nm to a value of 500 nm or greater. The arithmetic average surface roughness of the columnar film is 10 nm or smaller, 20% or more of the columnar crystals have the maximum diameters not exceeding 100 nm, and 5% or more of the columnar crystals have the maximum diameters of 500 nm or greater.

Abstract: The piezoelectric device includes a piezoelectric film that expands or contracts according to variations in voltage applied, a first electrode provided on a first side of the film, and a second electrode provided on a second side of the film. The film is formed on the second electrode by a vapor phase deposition and mainly composed of PbxByOz. An element at site B is at least one element selected from the group consisting of Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Sc, Co, Cu, In, Sn, Ga, Zn, Cd, Fe, and Ni, and 0<x?1, 0<y?1, and 2.5<z?3. A first value of x/y in a first area of the film 100 nm apart from a surface of contact with the second electrode toward the first electrode ranges from 0.8 to 1.6 or is 0.7 times or more but not greater than 1.5 times a second value of x/y in a center area of the film, or the first area has a ratio of perovskite peaks to pyrochlore peaks as measured by XRD of 0.2 or more.

Abstract: The piezoelectric device includes a substrate, a first electrode formed on the substrate, a piezoelectric film formed on the first electrode and a second electrode formed on a second side of the piezoelectric film which is away from a first side where the first electrode is formed. The first electrode is composed of a first layer in contact with the substrate and a second layer in contact with the piezoelectric film. The first layer is formed of a material that is wet etched at a different rate than the substrate. The in %-jet head includes the piezoelectric device, a liquid droplet storing/ejecting member for ejecting ink droplets through a ink spout and provided on the piezoelectric device and a diaphragm for vibrating in response to expansion or contraction of the piezoelectric device and provided between the piezoelectric device and the liquid droplet storing/ejecting member.

Abstract: A ferroelectric film containing a perovskite type oxide that is represented by Formula (P) is formed on a substrate by a sputtering technique under conditions satisfying Formulas (1) and (2), or Formulas (3) and (4): (Pb1?x+?Mx)(ZryTi1?y)Oz ??(P) wherein M is at least one kind of element selected from Bi and lanthanide elements, 0.05?x?0.4, and 0<y?0.7, the standard composition being such that ?=0, and z=3, 400?Ts(° C.)?475 ??(1) 20?Vs(V)?50 ??(2), 475?Ts(° C.)?600 ??(3) Vs(V)?40 ??(4), wherein Ts (° C.) is the film formation temperature, and Vs (V) is the plasma potential in the plasma at the time of the film formation.

Abstract: A perovskite type oxide that is represented by Formula (P) shown below is provided: (Pb1?x+?Mx) (ZryTi1?y)Oz ??(P) wherein M represents at least one kind of element selected from the group consisting of Bi and lanthanide elements, x represents a number satisfying the condition of 0.05?x?0.4, and y represents a number satisfying the condition of 0<y?0.7, the standard composition being such that ?=0, and z=3, with the proviso that the value of ? and the value of z may deviate from the standard values of 0 and 3, respectively, within a range such that the perovskite structure is capable of being attained.

Abstract: The sputtering apparatus includes a vacuum vessel, a sputter electrode placed within the vacuum vessel to hold a target material to be sputtered, a radio frequency power source for applying radio frequency waves to the electrode, a substrate holder which is spaced from the electrode and on which a substrate is held, a thin film being to be deposited on the substrate from components of the target material, and an impedance adjusting circuit for adjusting a first impedance of the substrate holder. The impedance adjusting circuit has a first end directly set at a ground potential and has an impedance circuit which is adjustable for adjusting the first impedance, a second impedance of the impedance circuit is adjusted to thereby adjust the first impedance and, hence, a potential of the substrate.

Abstract: A ferroelectric film containing a perovskite type oxide represented by Formula (P) is formed on a substrate, which stands facing a target according to the composition of the ferroelectric film, by a sputtering technique under conditions satisfying Formulas (1) and (2), or (3) and (4): (Pb1?x+?Mx)(ZryTi1?y)Oz ??(P) wherein M represents at least one kind of element selected from Bi and Lanthanide elements, 0.05?x?0.4, and 0<y?0.7, the standard composition being such that ?=0, and z=3, 400 ? Ts (° C.) ? 500 . . . (1) 30 ? D (mm) ? 80 . . . (2), 500 ? Ts (° C.) ? 600 . . . (3) 30 ? D (mm) ? 100 . . . (4), wherein Ts (° C.) represents the film formation temperature, and D (mm) represents the spacing distance between the substrate and the target.

Abstract: In a piezoelectric device, a first electrode, a first piezoelectric film, a second piezoelectric film, and a second electrode are formed in this order on a first electrode formed above a surface of the substrate, and an intermediate electrode is arranged between the first and second piezoelectric films. Each of the first and second piezoelectric films has a thickness of 10 micrometers or smaller, and has a first surface facing toward the substrate and a second surface opposite to the first surface. At least one of the first and second surfaces has an arithmetic average surface roughness (Ra) of 0.5 micrometers or smaller.

Abstract: A display device includes a porous body impregnated with electroendosmosis liquid, a transparent plate which is opposed to the porous body with a space intervening therebetween and is provided on its side facing the porous body with a light diffusive reflection surface and on the other side opposite to the one side with a light transmission surface, and an electric field forming system which forms an electric field acting on the electroendosmosis liquid and controls whether the electroendosmosis liquid is brought into contact with the light diffusive reflection surface by changing the electric field to selectively move the electroendosmosis liquid toward the porous body or the space.

Abstract: An inorganic film formed of an inorganic material on a metal film having a surface including surface-oxidized areas. The surface-oxidized areas are surface oxidized to different degrees. For example, the surface-oxidized areas are one or more lowly-surface-oxidized areas and one or more highly-surface-oxidized areas. The inorganic film includes regions which are respectively formed on the surface-oxidized areas, and the regions have different crystal structures according to the different degrees of surface oxidation. For example, a patterned inorganic film constituted by one or more protruding portions arranged on one or more lowly-surface-oxidized areas of the surface of the metal film can be produced by removing the portions of the inorganic film formed on highly-surface-oxidized areas.

Abstract: A ferroelectric film having a columnar structure constituted by a plurality of columnar grains, and containing as a main component a perovskite oxide which has a composition expressed by a compositional formula A1+?[(ZrxTi1-x)1-yMy]Oz, where A represents one or more A-site elements including lead (Pb) as a main component, M represents one or more of vanadium (V), niobium (Nb), tantalum (Ta), and antimony (Sb) as one or more B-site elements, zirconium (Zr) and titanium (Ti) are also B-site elements, 0<x?0.7, 0.1?y?0.4, ? is approximately zero, z is approximately 3, and ? and z may deviate from 0 and 3, respectively, within ranges of ? and z in which the composition expressed by the compositional formula A1+?[(ZrxTi1-x)1-yMy]Oz can substantially form a perovskite structure.

Abstract: A piezoelectric device includes a substrate; and a laminated film formed above the substrate. The laminated film includes a lower electrode layer, a piezoelectric layer, and an upper electrode layer formed in this order, and the lower electrode layer is a metal electrode layer containing as one or more main components one or more nonnoble metals and/or one or more nonnoble alloys. Preferably, the one or more main components are one or more of the metals Cr, W, Ti, Al, Fe, Mo, In, Sn, Ni, Cu, Co, and Ta, and alloys of the metals.

Abstract: A film forming system includes a vacuum chamber introduction and discharge of film-forming gas into and from which are capable. A target holder is disposed in the vacuum chamber to hold a target, a substrate holder is opposed to the target holder and holds a film-forming substrate on which film is formed and a plasma forming portion generates plasma between the target holder and the film-forming substrate. The film-forming system is characterized by having a shield which surrounds the outer peripheral surface of the target holder facing the substrate.

Abstract: A piezoelectric film forming method includes the step of forming on a substrate, a piezoelectric film formed by the elements of a target by opposing a target having a composition according to the composition of film to be formed, and releasing the elements from the target by a vapor phase growth method using plasma. The following formulae (1) and (2) or (3) and (4) are satisfied. 400?Ts(° C.)?500 ??(1) 30?D(mm)?80 ??(2) 400?Ts(° C.)?600 ??(3) 30?D(mm)?100 ??(4) wherein Ts (° C.) and D (mm) respectively represent the film-forming temperature and the distance between the substrate and the target.

Abstract: Film formation conditions are determined in accordance with relationships among a film formation temperature Ts (° C.), a difference Vs?Vf (V), which is the difference between a plasma potential Vs (V) in the plasma at the time of the film formation and a floating potential Vf (V), and characteristics of the formed film. For a piezoelectric film containing at least one kind of Pb-containing perovskite type oxide, the film formation conditions should preferably be determined within a range such that Formulas (1) and (2) shown below are satisfied: Ts(° C.)?400 ??(1) ?0.2Ts+100<Vs?Vf(V)<?0.