Abstract: A flow channel structure includes: a first substrate in which a first flow channel section is arranged; a first adhesive layer which is arranged on the first substrate; a first noble metal layer containing gold and arranged over the first adhesive layer on the first substrate; a second substrate in which a second flow channel section is arranged; a second adhesive layer arranged on the second substrate; a second noble metal layer containing gold and arranged over the second adhesive layer on the second substrate; and an Au tubular structure disposed between the first and second noble metal layers which face to each other across the Au tubular structure, the Au tubular structure having a hollow portion serving as a connecting flow channel section which connects the first and second flow channel sections, a gold content of the Au tubular structure being not lower than 90 at. %.

Abstract: An actuator element includes: a piezoelectric body; a pair of electrodes mutually opposing to each other via the piezoelectric body; a diaphragm to which the piezoelectric body sandwiched between the pair of electrodes is bonded; and a base substrate arranged to oppose a movable part including the piezoelectric body and the diaphragm, the movable part being displaced in a direction toward the base substrate by application of a drive voltage to the pair of electrodes, wherein polarization (Pr)-electric field (E) hysteresis characteristics of the piezoelectric body are biased with respect to an electric field, and by application of a voltage in an opposite direction to the drive voltage, to the pair of electrodes, the movable part is displaced in a direction away from the base substrate.

Abstract: A multilayer body which includes a low-resistance metal layer having a low electrical resistance, excellent thermal resistance and low surface irregularity is provided. The multilayer body includes a substrate, and a low-resistance metal layer which is formed on the substrate and has a single-layer structure or a multilayer structure of two or more sublayers. The low-resistance metal layer includes a gold-containing layer or sublayer composed of gold and another metal.

Abstract: The columnar structure film is formed on a surface of a substrate by vapor phase epitaxy, and is constituted of a plurality of columnar bodies extending in directions non-parallel to the surface of the substrate. In the columnar structure film, a relationship GSmax>2.0 GSmin is satisfied, where GSmax and GSmin are respectively a maximum value and a minimum value of average diameters of the columnar bodies taken in planes perpendicular to a thickness direction of the columnar structure film.

Abstract: When a film containing constituent elements of a target is formed on a substrate through a vapor deposition process using plasma with placing the substrate and the target to face each other, a potential in a spatial range of at least 10 mm extending laterally from the outer circumference of the substrate is controlled to be equal to a potential on the substrate, and/or the substrate is surrounded with a wall surface having a potential controlled to be equal to the potential on the substrate.

Abstract: A flow channel structure includes: a first substrate in which a first flow channel section is arranged; a first adhesive layer which is arranged on the first substrate; a first noble metal layer containing gold and arranged over the first adhesive layer on the first substrate; a second substrate in which a second flow channel section is arranged; a second adhesive layer arranged on the second substrate; a second noble metal layer containing gold and arranged over the second adhesive layer on the second substrate; and an Au tubular structure disposed between the first and second noble metal layers which face to each other across the Au tubular structure, the Au tubular structure having a hollow portion serving as a connecting flow channel section which connects the first and second flow channel sections, a gold content of the Au tubular structure being not lower than 90 at. %.

Abstract: A resonant transducer comprising: a vibration plate; and a piezoelectric element including a piezoelectric film and an upper electrode that are laminated on the vibration plate, wherein a compressive stress is applied to the piezoelectric film.

Abstract: A resonant transducer comprising: a vibration plate; and a piezoelectric element including a piezoelectric film and an upper electrode, wherein a difference between a Young's modulus of the vibration plate and a Young's modulus of the piezoelectric film is not more than 20% with respect to the Young's modulus of the vibration plate.

Abstract: An ultrasonic surgical apparatus includes a treatment portion, a driving portion which drives the treatment portion by resonance, an operation portion main body which drives and controls the driving portion, and a connecting portion which connects the treatment portion and the operation portion main body. The driving portion includes a piezoelectric film and is formed on the treatment portion inside the connecting portion. The piezoelectric film has a perovskite structure, with crystals constituting the perovskite structure being oriented in the (100) direction or the (001) direction with a degree of orientation of not less than 60%.

Abstract: A droplet jetting device that includes a recording head section, a pressure sensor and a regulation pump is provided. The recording head section includes a recording head that jets droplets from nozzles and records an image at a recording medium. The pressure sensor is provided at the recording head section and senses a pressure of liquid supplied to the recording head by a main pump from a main tank. The main tank is disposed at a position away from the recording head section. The regulation pump is provided at the recording head section that is smaller in scale than the main pump and regulates pressure of the liquid such that the pressure of the liquid sensed by the pressure sensor is constant.

Abstract: When a film containing constituent elements of a target is formed on a substrate through a vapor deposition process using plasma with placing the substrate and the target to face each other, a potential in a spatial range of at least 10 mm extending laterally from the outer circumference of the substrate is controlled to be equal to a potential on the substrate, and/or the substrate is surrounded with a wall surface having a potential controlled to be equal to the potential on the substrate.

Abstract: When a film containing constituent elements of a target is formed on a substrate through a vapor deposition process using plasma with placing the substrate and the target to face each other, a potential in a spatial range of at least 10 mm extending laterally from the outer circumference of the substrate is controlled to be equal to a potential on the substrate, and/or the substrate is surrounded with a wall surface having a potential controlled to be equal to the potential on the substrate.

Abstract: A piezoelectric device includes a substrate; and a laminated film formed above the substrate. The laminated film includes a lower electrode layer, a piezoelectric layer, and an upper electrode layer formed in this order, and the lower electrode layer is a metal electrode layer containing as one or more main components one or more nonnoble metals and/or one or more nonnoble alloys. Preferably, the one or more main components are one or more of the metals Cr, W, Ti, Al, Fe, Mo, In, Sn, Ni, Cu, Co, and Ta, and alloys of the metals.

Abstract: A wiring material contains copper, nitrogen, and a dopant which is more readily oxidized than copper in an Ellingham diagram, the dopant being added to the wiring material at a rate of not less than 0.5 at. % and not more than 10 at. %.

Abstract: A ferroelectric film having a columnar structure constituted by a plurality of columnar grains, and containing as a main component a perovskite oxide which has a composition expressed by a compositional formula A1+?[(ZrxTi1?x)1?yMy]Oz, where A represents one or more A-site elements including lead (Pb) as a main component, M represents one or more of vanadium (V), niobium (Nb), tantalum (Ta), and antimony (Sb) as one or more B-site elements, zirconium (Zr) and titanium (Ti) are also B-site elements, 0<x?0.7, 0.1?y?0.4, ? is approximately zero, z is approximately 3, and ? and z may deviate from 0 and 3, respectively, within ranges of ? and z in which the composition expressed by the compositional formula A1+?[(ZrxTi1?x)1?yMy]Oz can substantially form a perovskite structure.

Abstract: A piezoelectric film has a columnar crystal structure constituted of a plurality of columnar crystals, and contains a perovskite oxide represented by the following formula (P) as a main component: PbaAb[(ZrcTil-c)l-dBd]Oe,??(P) where Pb and A are A-site elements, and A is at least one element selected from a group consisting of Bi, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ca, Sr and Ba; Zr, Ti and B are B-site elements, and B is at least one element selected from a group consisting of Nb, Ta and Sb; a is an amount of lead, b is an amount of the element A, c is a Zr/Ti ratio, d is an amount of the element B, e is an amount of oxygen; values of a, b and d satisfy a<1, a+b?1, and 0<d<b; and a value of e is within a range where the perovskite structure is obtained and e=3 is standard.

Abstract: Provided is a perovskite-type oxide film having a perovskite-type crystal structure and containing lead as a chief component, which, when subjected to Raman microspectroscopy at a plurality of points on a surface thereof so as to measure Raman spectra upon application of an electric field of 100 kV/cm and upon application of no electric field, has a mean of absolute values of peak shift amounts that is 2.2 cm?1 or less, with the peak shift amounts being found between Raman spectra in a range of 500 to 650 cm?1 measured upon application of an electric field of 100 kV/cm and Raman spectra in the range of 500 to 650 cm?1 measured upon application of no electric field. A production process and an evaluation method for such a film as well as a device using such a film are also provided.

Abstract: A film depositing apparatus comprises: a process chamber; a target holder provided in the process chamber for holding a target; a substrate holder for supporting a deposition substrate such that the deposition substrate faces the target holder in the process chamber; a power supply for supplying electric power between the target holder and the substrate holder to generate plasma in the process chamber; and an anode provided between the target holder and the substrate holder for capturing ions and/or electrons in the plasma being generated within the process chamber, wherein the anode includes: a cylindrical member provided so as to surround an outer periphery of a side of the substrate holder that faces the target holder; and at least one annular plate member attached to an inside wall of the cylindrical member, the plate member having a central opening larger than a surface of the deposition substrate.

Abstract: A method of manufacturing a micro structure, includes the steps of: preparing separate first and second substrates, the first substrate having a first surface on which a first structural body having a first height and a second structural body having a second height greater than the first height of the first structural body are arranged, the second substrate having a second surface; then placing the first and second substrates to cause the first and second surfaces to face each other across the first and second structural bodies; and then bonding the first and second substrates to each other while compressing the second structural body in a height direction thereof between the first and second surfaces to cause the second structural body to have a height defined by the first structural body.

Abstract: A method of forming a pattern of an inorganic material film, which method is more versatile, easy, and practical. The method includes the steps of: (a) forming a sacrifice layer having a pattern on a substrate by employing a material having a different thermal expansion coefficient from that of an inorganic material of the inorganic material film; (b) forming an inorganic material layer on the substrate, on which the sacrifice layer has been formed, at a predetermined deposition temperature by employing the inorganic material; (c) lowering a temperature of at least the inorganic material layer to produce cracks in the inorganic material layer formed on the sacrifice layer; and (d) removing the sacrifice layer and the inorganic material layer formed thereon.