Abstract: A method for manufacturing a piezoelectric element includes the steps of: forming a first base substrate having an element to be transferred; forming a second base substrate; and transferring the element to be transferred from the first base substrate to the second base substrate. The step of forming the element to be transferred includes forming a first electrode above a first substrate, forming a piezoelectric layer above the first electrode, forming a second electrode above the piezoelectric layer, crystallizing the piezoelectric layer, forming a dielectric layer at least above the second electrode, and etching the dielectric layer such that at least a portion of the second electrode is exposed and the dielectric layer has a protrusion upwardly protruding with respect to the second electrode.

Abstract: A tuning fork oscillating piece includes: a base; a pair of oscillating arms extending from the base in directions substantially parallel with each other; a drive piezoelectric element provided at least on one main surface or side surface of each of the oscillating arms to allow bending oscillation of the oscillating arms by piezoelectric distortion caused by applied charge; a detection piezoelectric element provided on the surface opposed to the surface of each of the oscillating arms on which the drive piezoelectric element is provided to convert the piezoelectric distortion caused by the bending oscillation of the oscillating arms into charge and output the charge. The drive piezoelectric element has a drive piezoelectric section. The detection piezoelectric element has a detection piezoelectric section. The absolute value of the piezoelectric d constant of the drive piezoelectric section is larger than the absolute value of the piezoelectric d constant of the detection piezoelectric section.

Abstract: A method for manufacturing a surface acoustic wave element having an interdigital transducer (IDT) electrode formed on a semiconductor substrate includes a) forming an insulation layer on a surface of an active side of the semiconductor substrate, b) forming a base layer on a whole surface of the insulation layer, c) planarizing a surface of the base layer, d) forming a piezoelectric member on a planarized surface of the base layer, e) forming the IDT electrode on a surface of the piezoelectric member, and f) forming a bank being higher than a height from the surface of the base layer to the surface of the IDT electrode on a peripheral of the surface of the base layer so as to surround the piezoelectric member.

Abstract: A piezoelectric laminate including a base and a first piezoelectric layer formed above the base and including potassium sodium niobate. The first piezoelectric layer is shown by a compositional formula (KaNa1-a)xNbO3, “a” and “x” in the compositional formula being respectively 0.1<a<1 and 1?x?1.2.

Abstract: A method for manufacturing a potassium niobate deposited body includes: forming a buffer layer above a substrate composed of an R-plane sapphire substrate; forming above the buffer layer a potassium niobate layer or a potassium niobate solid solution layer that epitaxially grows in a (100) orientation in a pseudo cubic system expression; and forming an electrode layer above the potassium niobate layer or the potassium niobate solid solution layer, wherein a (100) plane of the potassium niobate layer or the potassium niobate solid solution layer is formed to tilt with a [11-20] direction vector as a rotation axis with respect to an R-plane (1-102) of the R-plane sapphire substrate.

Abstract: A piezoelectric laminate including a base and a first piezoelectric layer formed above the base and including potassium sodium niobate. The first piezoelectric layer is shown by a compositional formula (KaNa1-a)xNbO3, “a” and “x” in the compositional formula being respectively 0.1<a<1 and 1?x?1.2.

Abstract: A piezoelectric film laminate includes a lithium tantalate substrate, and a lead zirconate titanate niobate layer formed above the lithium tantalate substrate.

Abstract: A ferroelectric memory device has a high performance, includes no Pb, and can be directly mounted onto an Si substrate. The ferroelectric memory device includes a (001)-oriented BiFeO3 ferroelectric layer 5 with a tetragonal structure, which is formed on an electrode 4 made of a perovskite material formed on an Si oxide film. The electrode 4 with a perovskite structure is formed by an ion beam assist method.

Abstract: An acceleration sensor includes: a piezoelectric vibration device; an oscillation circuit; and a detection circuit, wherein the piezoelectric vibration device includes a substrate, an insulation layer formed above the substrate, a vibration section forming layer formed above the insulation layer, a vibration section formed in a cantilever shape in a first opening section that penetrates the vibration section forming layer, a second opening section that penetrates the insulation layer and formed below the first opening section and the vibration section, and a piezoelectric element section formed on the vibration section, the oscillation circuit vibrates the piezoelectric vibration device at a resonance frequency, and the detection circuit detects a change in the frequency of vibration of the piezoelectric vibration device which is caused by an acceleration applied in a direction in which the vibration section extends, and outputs a signal corresponding to the acceleration based on the change in the frequency.

Abstract: An angular rate sensor includes: a piezoelectric vibration device; and a detection section, wherein the piezoelectric vibration device includes a base substrate, a vibration section having a fixed end affixed to the base substrate and a free end that does not contact the base substrate, and a driving section formed above the vibration section for generating flexural vibration of the vibration section; the vibration section has a first support section, four (first-fourth) cantilever sections supported by the first support section, and a second support section that supports the first support section and equipped with the fixed end; the first support section has two center lines that are orthogonal to each other; the first cantilever section and the second cantilever section are symmetrical to each other through one of the center lines of the first support section in a plan view; the third cantilever section and the fourth cantilever section are symmetrical to each other through the one of the center lines of th

Abstract: An acceleration sensor includes: a piezoelectric vibration device; an oscillation circuit; and a detection circuit, wherein the piezoelectric vibration device includes a substrate, an insulation layer formed above the substrate, a vibration section forming layer formed above the insulation layer, a vibration section formed in a cantilever shape in a first opening section that penetrates the vibration section forming layer and having a base section affixed to the vibration section forming layer and two beam sections extending from the base section, a second opening section that penetrates the insulation layer and formed below the first opening section and the vibration section, and a piezoelectric element section formed on each of the beam sections; the oscillation circuit vibrates the piezoelectric vibration device at a resonance frequency; and the detection circuit detects a change in the frequency of vibrations of the piezoelectric vibration device which is caused by an acceleration applied in a direction i

Abstract: A method for manufacturing a potassium niobate deposited body includes: forming a buffer layer above a substrate composed of an R-plane sapphire substrate; forming above the buffer layer a potassium niobate layer or a potassium niobate solid solution layer that epitaxially grows in a (100) orientation in a pseudo cubic system expression; and forming an electrode layer above the potassium niobate layer or the potassium niobate solid solution layer, wherein a (100) plane of the potassium niobate layer or the potassium niobate solid solution layer is formed to tilt with a [11-20] direction vector as a rotation axis with respect to an R-plane (1-102) of the R-plane sapphire substrate.

Abstract: A method for manufacturing a piezoelectric oscillator includes the steps of: forming a first semiconductor layer above a substrate; forming a second semiconductor layer above the first semiconductor layer; forming a first opening section that exposes the substrate by removing the second semiconductor layer and the first semiconductor layer in an area for forming a support section; forming the support section in the first opening section; forming a driving section that generates flexing vibration in an oscillation section above the second semiconductor layer; patterning the second semiconductor layer to form the oscillation section having the supporting section as a base end and another end provided so as not to contact the supporting section, and a second opening section that exposes the first semiconductor layer; and removing the first semiconductor layer through a portion exposed at the second opening section by an etching method, thereby forming a cavity section at least below the oscillation section, wher

Abstract: A piezoelectric oscillator includes: a base substrate; a frame-like supporting section formed from a portion of the base substrate; and a plurality of oscillator sections, wherein each of the oscillator sections includes an oscillation section that is formed from a portion of the base substrate, and has one end affixed to an inner side of the support section and another free end, and a driving section that generates flexing vibration at the oscillation section, and wherein the oscillation sections are different in length, and each of the driving sections has a first electrode formed above the base substrate, a piezoelectric layer formed above the first electrode, and a second electrode formed above the piezoelectric layer.

Abstract: A potassium niobate deposited body includes an R-plane sapphire substrate, a buffer layer composed of a metal oxide and formed above the R-plane sapphire substrate, a lead zirconate titanate niobate layer formed above the buffer layer, a potassium niobate layer or a potassium niobate solid solution layer formed above the lead zirconate titanate niobate layer, an electrode layer formed above the potassium niobate layer or the potassium niobate solid solution layer, and another substrate formed above the electrode layer.

Abstract: A method is provided for effectively manufacturing a piezoelectric device equipped with a piezoelectric film with a crystal orientation that is aligned in a desired direction. An interlayer which partially has a layer formed by an ion beam assisted laser ablation method while controlling a temperature rise accompanied by an ion beam irradiation by a cooling device and is bi-axially oriented as a whole, is formed on a surface of a substrate. A lower electrode is formed on the interlayer. A piezoelectric film is formed on the lower electrode. An upper electrode is formed on the piezoelectric film. The lower electrode and the piezoelectric film are formed by epitaxial growth.

Abstract: A potassium niobate deposited body includes a substrate, an electrode layer formed above the substrate, and a potassium niobate layer formed above the electrode layer. The potassium niobate layer can include a domain that epitaxially grows in a (110) or (001) orientation, when a lattice constant of orthorhombic potassium niobate is 21/2 c<a<b, and a b-axis is a polarization axis.

Abstract: An angular rate sensor including: a silicon-on-insulator (SOI) substrate having a substrate, an oxide layer formed above the substrate, and a semiconductor layer formed above the oxide layer; a tuning-fork type vibrating portion obtained by processing the semiconductor layer and the oxide layer and formed of the semiconductor layer; a driving portion which generates flexural vibration of the vibrating portion; and a detecting portion which detects an angular rate applied to the vibrating portion.

Abstract: A piezoelectric actuator comprising an optimum layer structure when (100) orientation strontium ruthenate is used as a bottom electrode is provided. This piezoelectric actuator comprises a diaphragm 30 that is constituted by (100) orientation yttria-stabilized zirconia, CeO2, or ZrO2, that is grown epitaxially on a (100) orientation Si substrate 20, a buffer layer 41 formed on the diaphragm and constituted by (001) orientation REBa2Cu3Ox, a bottom electrode 42 formed on the buffer layer and constituted by (100) orientation strontium ruthenate, a piezoelectric layer 43 formed on the bottom electrode and constituted by (100) orientation PZT, and a top electrode 44 formed on the piezoelectric layer.

Abstract: A tuning folk vibration device includes: a SOI substrate having a substrate, an oxide layer formed above the substrate and a semiconductor layer formed above the oxide layer; a tuning folk type vibration section that is formed by processing the semiconductor layer and the oxide layer and composed of the semiconductor layer; and a driving section for generating flexural vibration of the vibration section, wherein the vibration section includes a support section and two beam sections formed in a cantilever shape with the support section as a base of the beam sections, and the driving section includes a pair of drivers formed on each of the two beam sections, each of the drivers including a first electrode layer, a piezoelectric layer formed above the first electrode layer and a second electrode layer formed above the piezoelectric layer.