Patents by Inventor Takanori Matsuda

Takanori Matsuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7053526
    Abstract: A piezoelectric structure includes a vibrational plate; a piezoelectric film; the vibrational plate including a layer of a monocrystal material, a polycrystal material, a monocrystal material doped with an element which is different from an element constituting the monocrystal material, or a polycrystal material doped with an element which is different from an element constituting the polycrystal materials, and oxide layers sandwiching the aforementioned layer, the piezoelectric film has a single orientation crystal or monocrystal structure.
    Type: Grant
    Filed: February 11, 2002
    Date of Patent: May 30, 2006
    Assignees: Canon Kabushiki Kaisha
    Inventors: Akira Unno, Takao Yonehara, Tetsuro Fukui, Takanori Matsuda, Kiyotaka Wasa
  • Patent number: 7045935
    Abstract: An actuator comprises a laminated structure having a vibration plate, a lower electrode, a piezoelectric element, and an upper electrode laminated sequentially on a basic element, and then, at least the lower electrode of the two electrodes is a thin oxide film doped with La of single orientated crystal or monocrystal that contains Sr and Ti. Thus, it is made possible to materialize the micro miniaturized actuator having a strong structure of lamination with high adhesion, which is capable of obtaining large displacement with sufficient durability without spoiling the piezo-electrostrictive property thereof even with the small thickness of the piezoelectric element. With the micro miniaturized actuator thus structured, it is made possible to make a liquid discharge head more precisely.
    Type: Grant
    Filed: August 4, 2003
    Date of Patent: May 16, 2006
    Assignee: Canon Kabushiki Kaisha
    Inventors: Takanori Matsuda, Kenichi Takeda, Toshihiro Ifuku, Kiyotaka Wasa
  • Publication number: 20060033404
    Abstract: A piezoelectric member element including a piezoelectric member layer and a pair of electrode layers sandwiching the piezoelectric member layer, wherein at least three layers, which are directed in a preferential orientation to the (110) plane on the (100) plane of Si, are accumulated and the above described at least three layers include the above described piezoelectric member layer and one of the above described pair of electrode layers.
    Type: Application
    Filed: August 4, 2005
    Publication date: February 16, 2006
    Applicant: Canon Kabushiki Kaisha
    Inventors: Tetsuro Fukui, Katsumi Aoki, Takanori Matsuda
  • Publication number: 20060028100
    Abstract: A piezoelectric structure includes a vibrational plate; a piezoelectric film; the vibrational plate including a layer of a monocrystal material, a polycrystal material, a monocrystal material doped with an element which is different from an element constituting the monocrystal material, or a polycrystal material doped with an element which is different from an element constituting the polycrystal materials, and oxide layers sandwiching the aforementioned layer, the piezoelectric film has a single orientation crystal or monocrystal structure.
    Type: Application
    Filed: October 3, 2005
    Publication date: February 9, 2006
    Applicants: Canon Kabushiki Kaisha, Kiyotaka Wasa
    Inventors: Akira Unno, Takao Yonehara, Tetsuro Fukui, Takanori Matsuda, Kiyotaka Wasa
  • Publication number: 20060012648
    Abstract: A piezoelectric element including an upper electrode, a piezoelectric and/or electrostrictive material and a lower electrode, characterized in that the piezoelectric and/or electrostrictive material is a composite oxide constituted by ABO3 as general formula and the piezoelectric and/or electrostrictive material has a twin crystal.
    Type: Application
    Filed: January 30, 2004
    Publication date: January 19, 2006
    Applicants: CANON KABUSHIKI KAISHA, MASARU SHIMIZU
    Inventors: Toshihiro Ifuku, Kenichi Takeda, Tetsuro Fukui, Katsumi Aoki, Takanori Matsuda, Masaru Shimizu
  • Publication number: 20050219793
    Abstract: A dielectric element in which a substrate, a lower electrode layer, a dielectric layer and an upper electrode layer are provided in this order, wherein the dielectric layer has a first dielectric layer of which major component is an oxide and provided on a side of said lower electrode layer, and a second dielectric layer of which major component is an oxide and provided on a side of said upper electrode layer, and the second dielectric layer is thicker than the first dielectric layer, and a formula (1) described below is satisfied when a dielectric constant of the first dielectric layer at 25° C. is ?1 and a dielectric constant of the second dielectric layer at 25° C. is ?2. ?1/?2?0.
    Type: Application
    Filed: February 23, 2005
    Publication date: October 6, 2005
    Applicants: CANON KABUSHIKI KAISHA, KIYOTAKA WASA
    Inventors: Takanori Matsuda, Toshihiro Ifuku, Tetsuro Fukui, Kiyotaka Wasa
  • Publication number: 20050189849
    Abstract: A dielectric element having a dielectric layer provided between an upper electrode layer and a lower electrode layer, wherein the dielectric layer has a first dielectric layer and a second dielectric layer mutually different in composition, and composition of at least one component of the first dielectric layer changes as to a thickness direction of the first dielectric layer in proximity to a boundary between the first dielectric layer and the second dielectric layer.
    Type: Application
    Filed: February 23, 2005
    Publication date: September 1, 2005
    Applicants: CANON KABUSHIKI KAISHA, KIYOTAKA WASA
    Inventors: Toshihiro Ifuku, Takanori Matsuda, Katsumi Aoki, Kenichi Takeda, Kiyotaka Wasa
  • Patent number: 6927084
    Abstract: A method of manufacturing an actuator comprises the steps of bonding a piezoelectric film formed on a single crystal substrate to a diaphragm structure member and removing the single crystal substrate therefrom to manufacture the actuator. The single crystal substrate is a substrate having bonded portions where a plurality of single crystal substrates are bonded together.
    Type: Grant
    Filed: April 14, 2003
    Date of Patent: August 9, 2005
    Assignee: Canon Kabushiki Kaisha
    Inventors: Tetsuro Fukui, Takanori Matsuda, Toshihiro Ifuku, Akio Ikesue
  • Publication number: 20050127780
    Abstract: In piezoelectric thin films constituting crystalline dielectric thin film elements used for a piezoelectric actuator of a liquid discharge head, stress is generated in the crystallization step by heating due to the lattice misfit. Given this fact, by interposing between a substrate and intermediate layer which has a twin structure that absorbs the stress, film peeling and deterioration of the piezoelectric properties of the piezoelectric thin films are prevented. The intermediate layer is of a multi-layer structure which has a first intermediate layer comprising a twin structure thin film and a second intermediate layer which is the lower electrode, and because the substrate also serves as a lower electrode, the intermediate layer has a single layer structure comprising a twin structure thin film.
    Type: Application
    Filed: December 8, 2004
    Publication date: June 16, 2005
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Toshihiro Ifuku, Takanori Matsuda, Tetsuro Fukui
  • Patent number: 6854832
    Abstract: In a mono-crystal oxide conductive member on a silicon substrate, including an electrode material of a perovskite type piezoelectric element and an electrostrictive material and an oxide conductive material as a film formation substrate, a distance x between silicon atoms and a distance y between atoms of the mono-crystal oxide conductive member satisfy the following relationship: Z = ? my nx - 1 ? min ? 0.05 (n and m are given positive integers, 1?n?5, 1?m?7 and nx?3, my?3).
    Type: Grant
    Filed: April 16, 2003
    Date of Patent: February 15, 2005
    Assignee: Canon Kabushiki Kaisha
    Inventor: Takanori Matsuda
  • Patent number: 6841490
    Abstract: A substrate for a semiconductor device includes a crystalline silicon substrate; an insulative silicon compound layer thereon and a crystalline insulation layer on the insulative silicon compound layer, wherein the insulative silicon compound layer contains not more than 10 at % of component element of a material constituting the crystalline insulation layer, the component element being provided in the insulative silicon compound layer by diffusion.
    Type: Grant
    Filed: October 28, 2003
    Date of Patent: January 11, 2005
    Assignee: Canon Kabushiki Kaisha
    Inventors: Akira Unno, Takao Yonehara, Tetsuro Fukui, Takanori Matsuda, Kiyotaka Wasa
  • Publication number: 20040155559
    Abstract: A ferroelectric thin film element comprises a substrate and an epitaxial ferroelectric thin film provided on the substrate. The epitaxial ferroelectric thin film satisfies a relation z/z0>1.003. A crystal face parallel to a crystal face of a surface of the substrate among crystal faces of the epitaxial ferroelectric thin film is taken as a Z crystal face, a face spacing of the Z crystal face is taken as z and a space of the Z crystal face of a material constituting the epitaxial ferroelectric thin film in a bulk state is taken as z0, and also satisfies a relation 0.997≦x/x0≦1.003. One of crystal faces of the epitaxial ferroelectric thin film perpendicular to the Z crystal face is taken as an X crystal face, a face spacing of the X crystal face is taken as x and a face spacing of the X crystal face of the material constituting the epitaxial ferroelectric thin film in a bulk state is taken as x0.
    Type: Application
    Filed: February 6, 2004
    Publication date: August 12, 2004
    Applicant: Canon Kabushiki Kaisha
    Inventors: Toshihiro Ifuku, Tetsuro Fukui, Takanori Matsuda
  • Publication number: 20040077153
    Abstract: A substrate for a semiconductor device includes a crystalline silicon substrate; an insulative silicon compound layer thereon and a crystalline insulation layer on the insulative silicon compound layer, wherein the insulative silicon compound layer contains not more than 10 at % of component element of a material constituting the crystalline insulation layer, the component element being provided in the insulative silicon compound layer by diffusion.
    Type: Application
    Filed: October 28, 2003
    Publication date: April 22, 2004
    Applicant: Canon Kabushiki Kaisha
    Inventors: Akira Unno, Takao Yonehara, Tetsuro Fukui, Takanori Matsuda, Kiyotaka Wasa
  • Publication number: 20040066116
    Abstract: An actuator comprises a laminated structure having a vibration plate, a lower electrode, a piezoelectric element, and an upper electrode laminated sequentially on a basic element, and then, at least the lower electrode of the two electrodes is a thin oxide film doped with La of single orientated crystal or monocrystal that contains Sr and Ti. Thus, it is made possible to materialize the micro miniaturized actuator having a strong structure of lamination with high adhesion, which is capable of obtaining large displacement with sufficient durability without spoiling the piezo-electrostrictive property thereof even with the small thickness of the piezoelectric element. With the micro miniaturized actuator thus structured, it is made possible to make a liquid discharge head more precisely.
    Type: Application
    Filed: August 4, 2003
    Publication date: April 8, 2004
    Applicant: Canon Kabushiki Kaisha
    Inventors: Takanori Matsuda, Kenichi Takeda, Toshihiro Ifuku, Kiyotaka Wasa
  • Patent number: 6653211
    Abstract: A substrate for a semiconductor device includes a crystalline silicon substrate; an insulative silicon compound layer thereon and a crystalline insulation layer on the insulative silicon compound layer, wherein the insulative silicon compound layer contains not more than 10 at % of component element of a material constituting the crystalline insulation layer, the component element being provided in the insulative silicon compound layer by diffusion.
    Type: Grant
    Filed: February 11, 2002
    Date of Patent: November 25, 2003
    Assignee: Canon Kabushiki Kaisha
    Inventors: Akira Unno, Takao Yonehara, Tetsuro Fukui, Takanori Matsuda, Kiyotaka Wasa
  • Publication number: 20030197174
    Abstract: In a mono-crystal oxide conductive member on a silicon substrate, including an electrode material of a perovskite type piezoelectric element and an electrostrictive material and an oxide conductive material as a film formation substrate, a distance x between silicon atoms and a distance y between atoms of the mono-crystal oxide conductive member satisfy the following relationship: 1 Z = &LeftBracketingBar; my nx - 1 &RightBracketingBar; min ≧ 0.
    Type: Application
    Filed: April 16, 2003
    Publication date: October 23, 2003
    Applicant: Canon Kabushiki Kaisha
    Inventor: Takanori Matsuda
  • Publication number: 20030196745
    Abstract: A method of manufacturing an actuator omprises the steps of bonding a piezoelectric film formed on a single crystal substrate to a diaphragm structure member and removing the single crystal substrate therefrom to manufacture the actuator. The single crystal substrate is a substrate having bonded portions where a plurality of single crystal substrates are bonded together.
    Type: Application
    Filed: April 14, 2003
    Publication date: October 23, 2003
    Applicant: Canon Kabushiki Kaisha
    Inventors: Tetsuro Fukui, Takanori Matsuda, Toshihiro Ifuku, Akio Ikesue
  • Publication number: 20030003695
    Abstract: A substrata for a semiconductor device includes a crystalline silicon substrate; an insulative silicon compound layer thereon and a crystalline insulation layer on the insulative silicon compound layer, wherein the insulative silicon compound layer contains not more than 10 at % of component element of a material constituting the crystalline insulation layer, the component element being provided in the insulative silicon compound layer by diffusion.
    Type: Application
    Filed: February 11, 2002
    Publication date: January 2, 2003
    Inventors: Akira Unno, Takao Yonehara, Tetsuro Fukui, Takanori Matsuda, Kiyotaka Wasa
  • Publication number: 20020140320
    Abstract: A piezoelectric structure includes a vibrational plate; a piezoelectric film; the vibrational plate including a layer of a monocrystal material, a polycrystal material, a monocrystal material doped with an element which is different from an element constituting the monocrystal material, or a polycrystal material doped with an element which is different from an element constituting the polycrystal materials, and oxide layers sandwiching the aforementioned layer, the piezoelectric film has a single orientation crystal or monocrystal structure.
    Type: Application
    Filed: February 11, 2002
    Publication date: October 3, 2002
    Inventors: Akira Unno, Takao Yonehara, Tetsuro Fukui, Takanori Matsuda, Kiyotaka Wasa
  • Publication number: 20020076875
    Abstract: A piezoelectric element structure comprises a supporting substrate, and a piezoelectric film supported on the supporting substrate, in which the piezoelectric film contains a first layer, and a second layer having zirconium, each provided with perovskite structure, and formed to be in contact with each other or laminated through an intermediate layer, and the temperature is set at 500° C. or more at the time of thin film formation so as to provide the piezoelectric film, and a quick cooling is given from the thin film formation temperature at least to 450° C. with a cooling speed of 30° C./min or more for the formation thereof. The piezoelectric film thus formed is in a small thickness as compared with the conventional piezoelectric film, but presents a large piezoelectric constant, hence making it possible to perform efficient microprocessing thereof reliably.
    Type: Application
    Filed: June 15, 2001
    Publication date: June 20, 2002
    Inventors: Kiyotaka Wasa, Akira Unno, Tetsuro Fukui, Takanori Matsuda