Abstract: Provided is a piezoelectric material which includes a compound free of lead and alkali metal and has a good piezoelectric property. The piezoelectric material where tungsten bronze structure oxides being free of lead and alkali metal and represented by AxB10O30 and A?x?B?10O30 are combined to form a morphotropic phase boundary has good piezoelectric property. The AxB10O30 is b(Ba5?5?Bi10?/3Nb10O30)+(1?b)(Ba4Ag2Nb10O30) (0?b?1 and 0<??0.4), and the A?x?B?10O30 is c(Sr5Nb10O30)+d(Ca5Nb10O30)+e(Ba5Nb10O30) (0?c?0.8, 0?d?0.4, 0.1?e?0.9, and c+d+e=1).

Abstract: A piezoelectric material including a strontium calcium sodium niobate-based tungsten bronze structure metal oxide having a high degree of orientation is provided. A piezoelectric element, a liquid discharge head, an ultrasonic motor, and a dust cleaning device including the piezoelectric material are also provided. A piezoelectric material includes a tungsten bronze structure metal oxide that includes metal elements which are strontium, calcium, sodium, and niobium, and tungsten. The metal elements satisfy following conditions on a molar basis: when Sr/Nb=a, 0.320?a?0.430, when Ca/Nb=b, 0.008?b?0.086, and when Na/Nb=c, 0.180?c?0.200. The tungsten content on a metal basis is 0.40 to 3.20 parts by weight relative to 100 parts by weight of the tungsten bronze structure metal oxide. The tungsten bronze structure metal oxide has a c-axis orientation.

Abstract: A piezoelectric material including a barium bismuth niobate-based tungsten bronze structure metal oxide having a high degree of orientation is provided. A piezoelectric element, a liquid discharge head, an ultrasonic motor, and a dust cleaning device including the piezoelectric material are also provided. A piezoelectric material includes a tungsten bronze structure metal oxide that includes metal elements which are barium, bismuth, and niobium, and tungsten. The metal elements satisfy following conditions on a molar basis: when Ba/Nb=a, 0.30?a?0.40, and when Bi/Nb=b, 0.012?b?0.084. The tungsten content on a metal basis is 0.40 to 3.00 parts by weight relative to 100 parts by weight of the tungsten bronze structure metal oxide. The tungsten bronze structure metal oxide has a c-axis orientation.

Abstract: A piezoelectric material containing a barium bismuth calcium niobate-based tungsten bronze structure metal oxide having a high degree of orientation is provided. A piezoelectric element, a liquid discharge head, an ultrasonic motor, and a dust cleaning device including the piezoelectric material are also provided. The piezoelectric material includes a tungsten bronze structure metal oxide that includes metal elements which are barium, bismuth, calcium, and niobium; and tungsten. The metal elements satisfy following conditions on a molar basis: when Ba/Nb=a, 0.37?a?0.40, when Bi/Nb=b, 0.020?b?0.065, and when Ca/Nb=c, 0.007?c?0.10. The tungsten content on a metal basis is 0.4 to 2.0 parts by weight relative to 100 parts by weight of the tungsten bronze structure metal oxide. The tungsten bronze structure metal oxide has a c-axis orientation.

Abstract: A method of manufacturing ceramics includes: placing, on a base material, a first slurry in which a metal oxide powder is dispersed; applying a magnetic field to the first slurry to solidify the first slurry, thereby forming an under coat layer made of a first compact; placing, on the under coat layer, a second slurry containing a metal oxide powder constituting the ceramics; applying a magnetic field to the second slurry to solidify the second slurry, thereby forming a second compact to obtain a laminated body of the second compact and the under coat layer; and obtaining the ceramics made of the second compact by removing the under coat layer from the laminated body of the second compact and the under coat layer and then sintering the second compact, or sintering the laminated body of the second compact and the under coat layer and then removing the under coat layer.

Abstract: Disclosed is a transformation method whereby an ability to produce a useful substance of a stramenopile can be improved. The method for transforming a stramenopile comprises transferring a foreign gene into the stramenopile which is a microorganism belonging to the class Labyrinthula, more specifically, to a genus Labyrinthula, Altornia, Aplanochytrium, Schizochytrium, Aurantiochytrium, Thraustochytrium, Ulkenia, etc. Said foreign gene, which is a gene relating to tolerance against an antibiotic, a colorimetric protein and/or a fatty acid desaturase (?5 desaturase gene, ?12 desaturase gene and/or ?3 desaturase gene), is transferred by using the electroporation or gene-gun technique.

Abstract: Provided is a piezoelectric material including a bismuth barium niobium oxide-based tungsten bronze structure metal oxide having a high Curie temperature and being excellent in piezoelectric property. The piezoelectric material includes a metal oxide having a tungsten bronze structure represented by the following general formula (1), in which the metal oxide having a tungsten bronze structure includes Li, and a content of the Li is 0.015 weight percent or more and 0.600 weight percent or less in terms of metal with respect to 100 parts by weight of the metal oxide: AxB100O30??(1) where A represents Ba and Bi, or at least one kind or more of elements selected from the group consisting of: Na, Sr, and Ca in addition to Ba and Bi; B represents Nb, or Nb and Ta; and x represents a numerical value of 4.5<x<5.5.

Abstract: There are disclosed an epitaxial film, comprising: heating an Si substrate provided with an SiO2 layer with a film thickness of 1.0 nm or more to 10 nm or less on a surface of the substrate; and forming on the SiO2 layer by use of a metal target represented by the following composition formula: yA(1?y)B??(1), in which A is one or more elements selected from the group consisting of rare earth elements including Y and Sc, B is Zr, and y is a numeric value of 0.03 or more to 0.20 or less, the epitaxial film represented by the following composition formula: xA2O3?(1?x)BO2??(2), in which A and B are respectively same elements as A and B of the composition formula (1), and x is a numeric value of 0.010 or more to 0.035 or less.

Abstract: A perovskite type oxide of a single crystal structure or a uniaxial-oriented crystal structure is represented by ABO3. Site A includes Pb as a main component and site B includes a plurality of elements. The perovskite type oxide includes a plurality of crystal phases selected from the group consisting of tetragonal, rhombohedral, orthorhombic, cubic, pseudo-cubic and monoclinic systems and the plurality of crystal phases are oriented in the direction of <100>.

Abstract: A piezoelectric substrate of a perovskite-type oxide is expressed by a general formula of ABO3 having a laminate structure of a single crystal structure or a uniaxial crystal structure expressed by (Pb1-xMx)xm(ZryTi1-y)O3 (where M represents an element selected from La, Ca, Ba, Sr, Bi, Sb and W). The laminate structure has a first crystal phase layer having a crystal structure selected from a tetragonal structure, a rhombohedral structure, a pseudocubic structure and a monoclinic structure, a second crystal phase layer having a crystal structure different from the crystal structure of said first crystal phase layer and a boundary layer arranged between the first crystal phase layer and the second crystal phase layer with a crystal structure gradually changing in a thickness direction of the layer. The thicknesses of the first and second crystal phase layer differ.

Abstract: To provide a piezoelectric ceramic containing BiFeO3 having a {110} plane orientation in a pseudo-cubic form, which is suited for the domain engineering, the piezoelectric ceramic includes a perovskite-type metal oxide represented by the following general formula (1), and has a {110} plane orientation in a pseudo-cubic form: xBiFeO3-(1-x)ABO3??General Formula (1) where A and B each represent one kind or more of metal ions; A represents a metal ion having a valence of 1, 2 or 3; and B represents a metal ion having a valence of 3, 4, or 5, provided that x is within a range of 0.3?x?1.

Abstract: Provided is an oriented piezoelectric material with satisfactory sintering property free of Pb that is a hazardous substance, and a water-soluble alkaline ion, and a production method therefor. To this end, provided is a compound, including a tungsten bronze structure metal oxide, in which: the tungsten bronze structure metal oxide contains at least metal elements of Ba, Bi, Ca, and Nb, the metal elements satisfying the following conditions in terms of molar ratio; and has a C-axis orientation. The compound shows Ba/Nb=a: 0.363<a<0.399, Bi/Nb=b: 0.0110<b<0.0650, and Ca/Nb=c: 0.005<c<0.105. The tungsten bronze structure metal oxide preferably includes (1?x)·Ca1.4Ba3.6Nb10O30?x·Ba4Bi0.67Nb10O30 (0.30?x?0.95).

Abstract: A piezoelectric element includes a piezoelectric film disposed on a substrate and a pair of electrodes disposed in contact with the piezoelectric film and utilizing a bending mode. The piezoelectric film includes domains constituted of a tetragonal crystal and including an a-domain which is formed by a crystal having a (100) plane parallel to the film surface of the piezoelectric film, the a-domains include an A-domain having a normal axis of (001) plane substantially parallel to a principal bending direction of the piezoelectric film and a B-domain having a normal axis of (001) plane substantially perpendicular to the principal bending direction of the piezoelectric film, and the A-domains have a volume proportion larger than 50 vol % with respect to the sum of the volume of the A-domains and the volume of the B-domains.

Abstract: The piezoelectric actuator includes a piezoelectric film between two electrode layers and a diaphragm. Assuming that: each elastic coefficient of all materials is isotropic and a distortion amount of the piezoelectric film by an electric field is isotropic in all in-plane directions; a point located on a diaphragm surface and having a maximum displacement when a predetermined electric field is applied to distort the piezoelectric film, is expressed by P?MAX; and a point located on a circumference of a reference-circle having P?MAX as a center and having a minimum difference in displacement from P?MAX is expressed by P?A, the diaphragm has a shape capable of determining an axis A1 set in a straight-line joining P?MAX and P?A, the diaphragm comprises a single-crystalline-material in which a plane orthogonal to A1 and perpendicular to an axis A2 on the diaphragm surface, is a {110}-plane, and the piezoelectric film is a {100}-single-orientation film.

Abstract: A main component of a piezoelectric substance is PZT which has a perovskite type structure expressed as Pb(ZrxTi1-x)O3, in which x expresses an element ratio Zr/(Zr+Ti) of Zr and Ti in the formula, an element ratio Pb/(Zr+Ti) of Pb, Zr and Ti of the piezoelectric substance is 1.05 or more, an element ratio Zr/(Zr+Ti) of Zr and Ti is 0.2 to 0.8 inclusive, and a Curie temperature Tc of the piezoelectric substance and a Curie temperature Tc0 in bulk at an element ratio of Zr and Ti of the piezoelectric substance satisfy a relation of Tc>Tc0+50° C.

Abstract: A piezoelectric element comprises a piezoelectric body including a film made of an ABO3 perovskite oxide crystal epitaxially grown above a substrate, and a pair of electrode layers provided to the piezoelectric body, wherein the piezoelectric body has a porous region on a side opposite to a side of the substrate.

Abstract: An oxynitride piezoelectric material, which exhibits ferroelectricity and has good piezoelectric properties, and a method of producing the oxynitride piezoelectric material. The oxynitride piezoelectric material includes a tetragonal perovskite-type oxynitride represented by the following general formula (1): A1?xBix+?1B1?yB?y+?2O3?zNz??(1), where A represents a divalent element, B and B? each represent a tetravalent element, x represents a numerical value of 0.35 or more to 0.6 or less, y represents a numerical value of 0.35 or more to 0.6 or less, z represents a numerical value of 0.35 or more to 0.6 or less, and ?1 and ?2 each represent a numerical value of ?0.2 or more to 0.2 or less, in which the A includes at least one kind selected from Ba, Sr, and Ca and the B and the B? each include at least one kind selected from Ti, Zr, Hf, Si, Ge, and Sn.

Abstract: A piezoelectric element comprises a piezoelectric film disposed on a substrate and a pair of electrodes disposed in contact with the piezoelectric film and utilizing a bending mode. The piezoelectric film includes domains constituted of a tetragonal crystal and including an a-domain which is formed by a crystal having a (100) plane parallel to the film surface of the piezoelectric film, the a-domains include an A-domain having a normal axis of (001) plane substantially parallel to a principal bending direction of the piezoelectric film and a B-domain having a normal axis of (001) plane substantially perpendicular to the principal bending direction of the piezoelectric film, and the A-domains have a volume proportion larger than 50 vol % with respect to the sum of the volume of the A-domains and the volume of the B-domains.

Abstract: A method of manufacturing a piezoelectric body, formed from a film made of an ABO3 perovskite oxide crystal epitaxially grown on a substrate, includes forming a film containing an AOx crystal by using an oxide containing an A element and a B element by heating the substrate to a temperature which is equal to or higher than a temperature at which the AOx crystal is formed, and which is lower than a temperature at which the ABO3 perovskite oxide crystal is formed and changing the film containing the AOx crystal into a film made of the ABO3 perovskite oxide crystal by heating the substrate to a temperature which exceeds a temperature at which the AOx crystal can be present, and which is equal to or higher than a temperature at which the ABO3 perovskite oxide crystal is formed.

Abstract: A piezoelectric element comprises a piezoelectric film disposed on a substrate and a pair of electrodes disposed in contact with the piezoelectric film and utilizing a bending mode. The piezoelectric film includes domains constituted of a tetragonal crystal and including an a-domain which is formed by a crystal having a (100) plane parallel to the film surface of the piezoelectric film, the a-domains include an A-domain having a normal axis of (001) plane substantially parallel to a principal bending direction of the piezoelectric film and a B-domain having a normal axis of (001) plane substantially perpendicular to the principal bending direction of the piezoelectric film, and the A-domains have a volume proportion larger than 50 vol % with respect to the sum of the volume of the A-domains and the volume of the B-domains.