Abstract: A process apparatus includes a differential pumping device and a focused ion beam column. The differential pumping device includes a head which has a plurality of annular grooves formed in a surface thereof which faces a substrate to be processed. The annular grooves surround the center of the head. An orifice is formed inside an innermost one of the annular grooves and defines a processing space serving to achieve processing of a process surface of the substrate. A vacuum pump is connected to at least one of the annular grooves to suck gas from the one of the annular grooves with the surface of the head facing the processing surface of the substrate to create a high-level vacuum in the processing space. The focused ion beam column is equipped with a cylindrical chamber leading to the orifice in communication with the processing space. The chamber has disposed therein a focused ion beam optical system which works to emit a focused ion beam through the orifice.

Abstract: A photocatalytic filter includes a filter substrate, the filter substrate being a porous metal, and a photocatalyst fixed to the filter substrate. When a thickness of the porous metal is t (mm) and an average cell number per inch of the porous metal is C (ppi), a product (t×C) of the thickness t and the average cell number C is from 100 or more to 400 or less.

Abstract: A focused energy beam apparatus includes a substrate support and a focused energy beam column equipped with a differential pumping device movable to a location facing an area of a process target surface of the substrate. The support supports a periphery of the substrate with a horizontal orientation. A positive pressure chamber is disposed below the substrate and exerts a positive pressure on the process target area to cancel deflection of the substrate arising from its own weight. A local depressurizing mechanism is arranged in the positive pressure chamber, out of contact with the substrate, and exerts a negative pressure on a lower surface of the substrate to cancel a suction force created by the differential pumping device. The local depressurizing mechanism is movable relative to the substrate following movement of the differential pumping device while facing the differential pumping device through the substrate.

Abstract: An in-vehicle hands-free device includes a memory, and a hardware processor coupled to the memory. The hardware processor is configured to: connect to a mobile phone; acquire incoming call history data of the mobile phone connected by the hardware processor; detect a traveling state of a vehicle on which the in-vehicle hands-free device is mounted; and when accepting a request to output the incoming call history data, output the incoming call history data by voice when detecting that the vehicle is traveling, and output the incoming call history data by display when detecting that the vehicle is not traveling.

Abstract: A differential pumping apparatus for creating a high vacuum inside a processing space includes a displacement drive unit configured to move a substrate to be processed or a head, to adjust parallelism and distance between a surface to be processed and a surface of the head. Gap measurement devices are placed at three or more locations along the periphery of the surface of the head to provide distance information. A gap control unit is configured to control the displacement drive unit in response to the distance information between the surface to be processed and the surface adapted to face the surface to be processed, so that the surface to be processed and the surface adapted to face the surface to be processed are parallel.

Abstract: To provide a cleaning composition which is suitable for cleaning precision machinery parts and exhibits a small environmental burden as well as excellent safety and economic efficiency. A cleaning composition including: a component A, the component A being a hydrofluorocarbon, a hydrofluoroether, a hydrofluoroolefin, or a hydrochlorofluoroolefin; a component B, the component B being a hydrofluorocarbon, a hydrofluoroether, a hydrofluoroolefin, or a hydrochlorofluoroolefin having a higher boiling point than the component A; and a component C, the component C being an aqueous organic solvent, wherein the cleaning composition is non-azeotropic.

Abstract: The present invention aims to solve the above mentioned problems by providing a new azeotrope-like composition that can be used for a wide range of industrial purposes. The provision of an azeotrope-like composition including 93.0-99.0 weight percent Z-1,1,1,4,4,4-hexafluoro-2-buteine and 0.1-7 weight percent isopropanol.

Abstract: The present invention aims to solve the above mentioned problems by providing a new azeotrope-like composition that can be used for a wide range of industrial purposes. The provision of an azeotrope-like composition including 93.0-99.0 weight percent Z-1,1,1,4,4,4-hexafluoro-2-buteine and 0.1-7 weight percent isopropanol.

Abstract: A gas treatment device includes a plasma-generating unit and a catalyst medium. The plasma-generating unit is provided with at least a flow channel through which a gas to be treated flows; and a power-supply unit for supplying electrical power, a first electrode, a second electrode and a dielectric material arranged inside the flow channel. A voltage is impressed between the first electrode and the second electrode by the power-supply unit and electrical discharging is caused to occur, whereby plasma is generated. The catalyst medium is adapted for accelerating a reaction with the gas to be treated and is provided in a position where the plasma generated by the plasma-generating unit inside the flow channel is present, and the catalyst medium has metallic catalytic particles present on an inorganic substance.

Abstract: An object of the invention is to separate a fluorine-containing solvent in a short time and efficiently from a fluorine-containing solvent which contains alcohol. There is provided a method for separating a fluorine-containing solvent by filtering a mixed liquid composition containing the fluorine-containing solvent, alcohol and water with a membrane containing fluorine resin.

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming first patterns on a workpiece layer, and forming second patterns containing a first metal on side faces of the first patterns. The method further includes removing the first patterns after forming the second patterns, and forming third patterns on side faces of the second patterns by a chemical change of the first metal after removing the first patterns. The method further includes removing the second patterns after forming the third patterns, and processing the workpiece layer by using the third patterns as a mask after removing the second patterns.

Abstract: An object of the present invention is to provide a replacement solution for drying a semiconductor pattern and a method for drying a semiconductor pattern, that can prevent breakdown of an intricate semiconductor pattern with a high aspect ratio, when drying after a washing process after edging is completed in a semiconductor manufacturing process. The present invention provides a replacement solution for drying a semiconductor pattern and method, containing a hydrofluoro ether and/or hydrofluorocarbon, that is completely miscible with isopropyl alcohol, has a boiling point of 70° C. or higher, and has surface tension under atmospheric conditions of 10 mN/m or lower when heated to a temperature below the boiling point.

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming first patterns on a workpiece layer, and forming second patterns containing a first metal on side faces of the first patterns. The method further includes removing the first patterns after forming the second patterns, and forming third patterns on side faces of the second patterns by a chemical change of the first metal after removing the first patterns. The method further includes removing the second patterns after forming the third patterns, and processing the workpiece layer by using the third patterns as a mask after removing the second patterns.

Abstract: The present invention is intended to provide a working machine allowing to form a large opening angle of an equipment cover while avoiding an obstacle even existing in front thereof. A rotating base is installed on a travelling machine body which includes right and left travelling devices, wherein an operation seat and vehicle equipment are arranged in the right and left, an equipment cover for covering the vehicle equipment is openably and closably provided, and a front lower portion of the equipment cover is pivotally supported on the rotating base via a lateral shaft. The lateral shaft of the equipment cover is inclined rearward from one end which is positioned in a side of the operation seat to the other end which is positioned in a side of a side portion of the rotating base.

Abstract: One embodiment of the deposit removal method includes: preparing a substrate having a pattern on which a deposit is deposited, the pattern being formed by etching; exposing the substrate to a first atmosphere containing hydrogen fluoride gas; exposing the substrate to oxygen plasma while heating after the step of exposing the substrate to the first atmosphere; and exposing the substrate to a second atmosphere containing hydrogen fluoride gas to remove the deposit on the substrate after the step of exposing the substrate to the oxygen plasma.

Abstract: To provide a device and a method for oxidation decomposition treatment of a hazardous gas of a volatile organic compound (VOC) or the like at normal temperature. A gas treatment device characterized in being provided with a plasma-generating unit and a catalyst medium. The plasma-generating unit is provided with at least a flow channel through which a gas to be treated flows; and a power-supply unit for supplying electrical power, a first electrode, a second electrode and a dielectric material arranged inside the flow channel. A voltage is impressed between the first electrode and the second electrode by the power-supply unit and electrical discharging is caused to occur, whereby plasma is generated. The catalyst medium is adapted for accelerating a reaction with the gas to be treated and is provided in a position where the plasma generated by the plasma-generating unit inside the flow channel is present, wherein the catalyst medium has metallic catalytic particles present on an inorganic substance.

Abstract: One embodiment of the deposit removal method includes: preparing a substrate having a pattern on which a deposit is deposited, the pattern being formed by etching; exposing the substrate to a first atmosphere containing hydrogen fluoride gas; exposing the substrate to oxygen plasma while heating after the step of exposing the substrate to the first atmosphere; and exposing the substrate to a second atmosphere containing hydrogen fluoride gas to remove the deposit on the substrate after the step of exposing the substrate to the oxygen plasma.

Abstract: The present invention is intended to provide a working machine allowing to form a large opening angle of an equipment cover while avoiding an obstacle even existing in front thereof. A rotating base is installed on a travelling machine body which includes right and left travelling devices, wherein an operation seat and vehicle equipment are arranged in the right and left, an equipment cover for covering the vehicle equipment is openably and closably provided, and a front lower portion of the equipment cover is pivotally supported on the rotating base via a lateral shaft. The lateral shaft of the equipment cover is inclined rearward from one end which is positioned in a side of the operation seat to the other end which is positioned in a side of a side portion of the rotating base.

Abstract: According to one embodiment, a method for manufacturing a semiconductor memory device includes forming a first stacked body on a substrate by alternately stacking a first film and a second film, forming a second stacked body on the first stacked body by alternately stacking a third film and a fourth film, making a through-hole to pierce the second stacked body and the first stacked body by performing etching, an etching rate of the third film being lower than an etching rate of the first film in the etching, forming a charge storage film on an inner surface of the through-hole, and forming a semiconductor member in the through-hole. The first film and the second film are formed of mutually different materials. The third film and the fourth film are formed of mutually different materials. And, the first film and the third film are formed of mutually different materials.

Abstract: A composition that includes 2-(2-aminoethylamino)-ethanol, at least one of a chelating agent and a corrosion inhibitor, and water. The composition is capable of removing organic, organometallic and metal oxide residues from semiconductor substrates. The invention also relates to a method of removing etching residue from a semiconductor substrate.