Abstract: The present invention is intended to provide a working machine allowing to form a large opening angle of an equipment cover while avoiding an obstacle even existing in front thereof. A rotating base is installed on a travelling machine body which includes right and left travelling devices, wherein an operation seat and vehicle equipment are arranged in the right and left, an equipment cover for covering the vehicle equipment is openably and closably provided, and a front lower portion of the equipment cover is pivotally supported on the rotating base via a lateral shaft. The lateral shaft of the equipment cover is inclined rearward from one end which is positioned in a side of the operation seat to the other end which is positioned in a side of a side portion of the rotating base.

Abstract: According to one embodiment, a method for manufacturing a semiconductor memory device includes forming a first stacked body on a substrate by alternately stacking a first film and a second film, forming a second stacked body on the first stacked body by alternately stacking a third film and a fourth film, making a through-hole to pierce the second stacked body and the first stacked body by performing etching, an etching rate of the third film being lower than an etching rate of the first film in the etching, forming a charge storage film on an inner surface of the through-hole, and forming a semiconductor member in the through-hole. The first film and the second film are formed of mutually different materials. The third film and the fourth film are formed of mutually different materials. And, the first film and the third film are formed of mutually different materials.

Abstract: A composition that includes 2-(2-aminoethylamino)-ethanol, at least one of a chelating agent and a corrosion inhibitor, and water. The composition is capable of removing organic, organometallic and metal oxide residues from semiconductor substrates. The invention also relates to a method of removing etching residue from a semiconductor substrate.

Abstract: A method of fabricating a semiconductor device includes etching a silicon oxide film, a silicon nitride film, a polycrystalline silicone film, and a gate insulating film in a predetermined pattern including a first opening width corresponding to a first trench and a second opening width corresponding to a second trench, the second opening width being larger than the first opening width, and etching the semiconductor substrate to simultaneously form the first and second trenches so that a first depth of the first trench is equal to a second depth of the second trench, and a first angle between a first side surface and a first bottom surface of the first trench is smaller than a second angle between a second side surface and a second bottom surface of the second trench, and the first trench includes a curved portion at an upper portion of the first side surface.

Abstract: A swiveling work machine includes a traveling apparatus, a swivel base mounted on the traveling apparatus to be pivotable about a vertical axis, a hood disposed at a rear portion of the swivel base, the hood accommodating therein an engine, a support frame being disposed across over the engine, and a ROPS having a front end thereof fixed to the swivel base and a rear end thereof fixed to an upper portion of the support frame. The support frame includes a front leg member disposed on one lateral side of the ROPS, the front leg member extending to vicinity of a position forwardly of the swivel base.

Abstract: A composition that includes 2-(2-aminoethylamino)-ethanol, at least one of a chelating agent and a corrosion inhibitor, and water. The composition is capable of removing organic, organometallic and metal oxide residues from semiconductor substrates. The invention also relates to a method of removing etching residue from a semiconductor substrate.

Abstract: A semiconductor device such as a flash memory includes a semiconductor substrate having a surface, and a plurality of trenches formed in the substrate so as to be open at the surface of the substrate, the trenches having opening widths different from each other. The trench with a smaller opening width is formed so as to have a first depth and the trench with a larger opening width has a bottom including opposite ends each of which has a second depth deeper than the first depth and a central portion shallower than the second depth.

Abstract: A semiconductor device includes a semiconductor substrate including a memory cell region and a peripheral circuit region, a first trench formed in the memory cell region and having a first depth and a first opening width, and a second trench formed in the peripheral circuit region and including a pair of bottom edge portions and a bottom middle portion located between the bottom edge portions. The second trench has a second opening width that is larger than the first opening width. Each bottom edge portion has a second depth that is larger than the first depth. The bottom middle portion has a third depth that is same as the first depth.

Abstract: A swivel work machine includes a traveling unit, a swivel base plate supported on the traveling unit to be pivotable about a vertical swivel axis, the swivel base plate having a first lateral side and a second lateral side provided across said vertical axis, a pair of upper and lower support brackets disposed at a front end of the swivel base plate with an offset toward the first lateral side and adapted for supporting an implement, a pair of left and right vertical ribs extending rearward from the support brackets and fixed to the swivel base plate and a cabin mounted on the swivel base plate. The cabin is disposed with an offset toward the second lateral side relative to the support brackets, a bottom of the cabin being disposed downwardly of the upper support bracket. The vertical rib disposed on the side of the second lateral side extends, from its front portion to its intermediate portion, parallel with a side face of the cabin on the side of the first lateral side.

Abstract: A semiconductor device includes a semiconductor substrate formed with a trench having a sidewall including a middle point. The trench includes a first part extending from a surface of the semiconductor substrate to the middle point of the trench and having a diameter that is gradually reduced as the first part extends deeper from the surface of the semiconductor substrate to the middle point of the trench. The trench includes a second part that is deeper than the middle point of the sidewall and that has a larger diameter than the middle point of the sidewall. An electrically conductive film is formed in an interior of the trench so as to be located lower than the middle point of the sidewall, the conductive film having a planarized upper surface, and a collar insulating film is formed on the conductive film and the sidewall of the trench so as to extend through the middle point of the sidewall along the sidewall.

Abstract: A swiveling work machine includes a swivel deck mounted to be pivotable about a vertical axis and a side cover for covering one lateral side on the swivel deck, an accommodating space capable of accommodating a work machine accessory being provided inside the lateral cover. The accommodating space accommodates, as the implement accessory, a work oil tank, a fuel tank and a control valve unit. The work oil tank is disposed at a fore-and-aft intermediate portion on one lateral side on the swivel deck. The fuel tank is disposed forwardly of the work oil tank with forming a gap relative thereto. The control valve unit is disposed upwardly of the fuel tank and longitudinally along the fore/aft direction.

Abstract: A method for manufacturing a semiconductor device includes forming a gate-insulating film on a semiconductor substrate; forming a gate electrode on the gate-insulating film to be electrically insulated from the semiconductor substrate; etching the gate electrode, the gate insulating film and the semiconductor substrate to form a trench which is used to electrically isolate a device region for forming a device from the remainder region on the substrate top surface; and etching the inside of the trench using a gas containing Cl2 and HBr with a different condition from the etching condition of the semiconductor substrate.

Abstract: A method of fabricating a semiconductor device includes forming a gate insulating film on an upper surface of a silicon substrate, forming a polycrystalline silicon film on the gate insulating film, and etching the polycrystalline silicon film, the gate insulating film, and the silicon substrate with a patterned coating type carbon film and a silicon nitride film so that first and second trenches are simultaneously formed. The first trench has a first width and a first depth and the second trench has a second width larger than the first width and the second depth larger than the first depth.

Abstract: A semiconductor device such as a flash memory includes a semiconductor substrate having a surface, and a plurality of trenches formed in the substrate so as to be open at the surface of the substrate, the trenches having opening widths different from each other. The trench with a smaller opening width is formed so as to have a first depth and the trench with a larger opening width has a bottom including opposite ends each of which has a second depth deeper than the first depth and a central portion shallower than the second depth.

Abstract: A semiconductor device such as a flash memory includes a semiconductor substrate having a surface, and a plurality of trenches formed in the substrate so as to be open at the surface of the substrate, the trenches having opening widths different from each other. The trench with a smaller opening width is formed so as to have a first depth and the trench with a larger opening width has a bottom including opposite ends each of which has a second depth deeper than the first depth and a central portion shallower than the second depth.

Abstract: A method of fabricating a semiconductor device, includes depositing, on a semiconductor substrate, a gate insulating film, a polycrystalline or amorphous silicon film, a silicon nitride film and a silicon oxide film sequentially, patterning a resist for forming a plurality of trenches on an upper surface of the substrate so as to have opening widths differing from each other, etching the silicon oxide film and the silicon nitride film formed on the substrate by an reactive ion etching (RIE) process with the resist serving as a mask, and etching the polycrystalline or amorphous silicon film, the gate insulating film and the substrate by the RIE process with the etched silicon oxide film and silicon nitride film serving as a mask using reactive plasma including a halogen gas, fluorocarbon gas, Ar and O2, thereby simultaneously forming the trenches with opening widths differing from each other.

Abstract: A semiconductor device includes a semiconductor substrate and first and second trenches. The first trench with a high aspect ratio is formed in a surface of the semiconductor substrate and has a bottom, two sidewalls and an open end. The first trench is formed so that at the bottom side, an inclination of each sidewall relative to the bottom has a first angle approximate to a right angle and at the bottom side, the inclination of each sidewall relative to the bottom has a second angle smaller than the first angle. The second trench has a lower aspect ratio than the first trench. The second trench has a bottom, two sidewalls and an open end and is formed so that an inclination of each sidewall relative to the bottom is substantially uniform from the bottom side to the open end side and has a third angle which is approximate to the second angle.

Abstract: A semiconductor device includes a semiconductor substrate formed with a trench having a bottleneck and a sidewall, an electrically conductive film formed in an interior of the trench so as to be located lower than the bottleneck, the conductive film having a planarized upper surface, and a collar insulating film formed on the conductive film and the sidewall of the trench so as to extend through the bottleneck along the sidewall.

Abstract: A swiveling work machine includes a traveling apparatus, a swivel base mounted on the traveling apparatus to be pivotable about a vertical axis, a hood disposed at a rear portion of the swivel base, the hood accommodating therein an engine, a support frame being disposed across over the engine, and a ROPS having a front end thereof fixed to the swivel base and a rear end thereof fixed to an upper portion of the support frame. The support frame includes a front leg member disposed on one lateral side of the ROPS, the front leg member extending to vicinity of a position forwardly of the swivel base.