Abstract: According to an aspect, a detection device includes: a planar detection device including photodetection elements arranged in a planar configuration; a light source device disposed so as to face the planar detection device; and a light-transmitting placement substrate that is disposed between the planar detection device and the light source device and configured to allow objects to be placed thereon. The planar detection device includes: a detection area where sensor pixels including the photodetection elements are arranged in a first direction and a second direction orthogonal to the first direction; a drive circuit configured to simultaneously supply drive signals to the sensor pixels arranged in the first direction; and a selection circuit configured to select a detection signal for each of the sensor pixels arranged in the second direction. The detection area is divided in the second direction into detection blocks. The drive circuit is provided for each detection block.

Abstract: According to an aspect, a detection device includes: an insulating substrate; a plurality of photoelectric conversion elements that are arranged in a detection area of the insulating substrate, and each of which is configured to receive light and output a signal corresponding to the received light; a first switching element that is provided for each photoelectric conversion element and includes a first semiconductor, a source electrode, and a drain electrode; and an inorganic insulating layer provided between the photoelectric conversion element and the first switching element in a normal direction of the insulating substrate.

Abstract: According to an aspect, a detection device includes: an insulating substrate; a plurality of photoelectric conversion elements that are arranged in a detection area of the insulating substrate, and each of which is configured to receive light and output a signal corresponding to the received light; a first switching element that is provided for each photoelectric conversion element and includes a first semiconductor, a source electrode, and a drain electrode; and an inorganic insulating layer provided between the photoelectric conversion element and the first switching element in a normal direction of the insulating substrate.

Abstract: According to one embodiment, a semiconductor device including, a panel including an inorganic film, and a first pad and a second pad positioned on the inorganic film, and a line substrate including a first connection line electrically connected to the first pad, and a second connection line electrically connected to the second pad, the line substrate positioned on the panel, wherein the inorganic film includes a first cut portion overlapping the first connection line, a second cut portion overlapping the second connection line, and a first extension portion between the first cut portion and the second cut portion, and the first cut portion, the second cut portion, and the first extension portion extend to a first side of the panel.

Abstract: A photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. The photo transistor, first switching transistor, and second transistor each include an oxide semiconductor layer as a channel layer.

Abstract: A detection device according to an aspect includes: a sensor base; a plurality of photoelectric conversion elements that are provided in a detection area of the sensor base and are configured to receive light incident thereon and output signals corresponding to the received light; a plurality of switching elements provided in the respective photoelectric conversion elements; a plurality of gate lines that are coupled to the switching elements and extend in a first direction; a first light source configured to emit first light having a first maximum emission wavelength; and a second light source configured to emit second light having a second maximum emission wavelength.

Abstract: A photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. The photo transistor, first switching transistor, and second transistor each include an oxide semiconductor layer as a channel layer.

Abstract: A detection device includes a plurality of optical sensors arranged in a detection area, a light source configured to emit light that is emitted to an object to be detected and is detected by the optical sensors, and a processor configured to perform processing based on outputs from the optical sensors. The processor is configured to determine, based on the outputs of the respective optical sensors obtained at a cycle of a predetermined period, an optical sensor an output of which is to be employed from among the optical sensors.

Abstract: A detection device is provided. The detection device includes a sensor base; a plurality of photoelectric conversion elements that are provided in a detection area of the sensor base and are configured to receive light incident thereon and output signals corresponding to the received light; a plurality of switching elements provided in the respective photoelectric conversion elements; a plurality of gate lines that are coupled to the switching elements and extend in a first direction; a first light source configured to emit first light having a first maximum emission wavelength; and a second light source configured to emit second light having a second maximum emission wavelength.

Abstract: According to one embodiment, an electronic device includes a liquid crystal panel and a camera. The liquid crystal panel includes a display area and an incident light control area. The camera overlaps the incident light control area. The display area includes a pixel electrode. The incident light control area includes a first control electrode which is different in shape from the pixel electrode, a second control electrode, and a common electrode. A voltage applied to the first control electrode and a voltage applied to the second control electrode are different in polarity from a common voltage applied to the common electrode.

Abstract: A detection device includes a plurality of optical sensors arranged in a detection area, a light source configured to emit light that is emitted to an object to be detected and is detected by the optical sensors, and a processor configured to perform processing based on outputs from the optical sensors. The processor is configured to determine, based on the outputs of the respective optical sensors obtained at a cycle of a predetermined period, an optical sensor an output of which is to be employed from among the optical sensors.

Abstract: A photodiode array is provided and includes insulating substrate; photodiodes arrayed in detection region of insulating substrate, photodiodes configured to output signal in accordance with light incident on photodiodes; first switching elements corresponding to photodiodes and including first semiconductor made of oxide semiconductor; gate lines coupled with first switching elements and extending in first direction; signal lines coupled with first switching elements and extending in second direction intersecting first direction; and gate line drive circuit including second switching element that includes second semiconductor made of polycrystalline silicone, gate line drive circuit being provided in peripheral region outside detection region and configured to drive gate lines, wherein photodiodes includes translucent conductive layer that is cathode, and translucent conductive layer overlaps none of signal lines in plan view.

Abstract: According to an aspect, a detection device includes: a substrate; a plurality of first electrodes arranged on the substrate; an insulating film provided between the first electrodes adjacent to each other; a plurality of photodiodes provided so as to correspond to the first electrodes; and a second electrode provided across the photodiodes. The photodiodes each comprise a first carrier transport layer, an active layer, and a second carrier transport layer stacked on the substrate. The first carrier transport layer, the active layer, and the second carrier transport layer are provided so as to cover the first electrodes and the insulating film between the adjacent first electrodes.

Abstract: According to one embodiment, an optical sensor device includes an insulating substrate, a first conductive layer and an optical sensor element disposed between the insulating substrate and the first conductive layer. The optical sensor element is electrically connected to the first conductive layer and covered by the first conductive layer. The optical sensor element includes a first semiconductor layer formed of an oxide semiconductor and controls an amount of charge flowing to the first conductive layer according to an amount of incident light to the first semiconductor layer.

Abstract: A photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. The photo transistor, first switching transistor, and second transistor each include an oxide semiconductor layer as a channel layer.

Abstract: According to one embodiment, an optical sensor device includes an insulating substrate, a first conductive layer and an optical sensor element disposed between the insulating substrate and the first conductive layer. The optical sensor element is electrically connected to the first conductive layer and covered by the first conductive layer. The optical sensor element includes a first semiconductor layer formed of an oxide semiconductor and controls an amount of charge flowing to the first conductive layer according to an amount of incident light to the first semiconductor layer.

Abstract: A photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. The photo transistor, first switching transistor, and second transistor each include an oxide semiconductor layer as a channel layer.

Abstract: A photodiode array is provided and includes insulating substrate; photodiodes arrayed in detection region of insulating substrate, photodiodes configured to output signal in accordance with light incident on photodiodes; first switching elements corresponding to photodiodes and including first semiconductor made of oxide semiconductor; gate lines coupled with first switching elements and extending in first direction; signal lines coupled with first switching elements and extending in second direction intersecting first direction; and gate line drive circuit including second switching element that includes second semiconductor made of polycrystalline silicone, gate line drive circuit being provided in peripheral region outside detection region and configured to drive gate lines, wherein photodiodes includes translucent conductive layer that is cathode, and translucent conductive layer overlaps none of signal lines in plan view.

Abstract: A detection device includes a plurality of detection elements arranged in a matrix having a row-column configuration in a detection region, a plurality of scan lines coupled to the detection elements arranged in a first direction, a plurality of output signal lines that are coupled to the detection elements arranged in a second direction different from the first direction, and to which the detection elements output detection signals, a detection circuit configured to be supplied with the detection signals through the output signal lines, and a control circuit configured to output at least selection signals for switching between selection and non-selection of the output signal lines to supply the detection signals to the detection circuit. The control circuit is configured to discharge an electric charge of each of the non-selected output signal lines different from the selected output signal lines.

Abstract: According to one embodiment, a semiconductor device including, a panel including an inorganic film, and a first pad and a second pad positioned on the inorganic film, and a line substrate including a first connection line electrically connected to the first pad, and a second connection line electrically connected to the second pad, the line substrate positioned on the panel, wherein the inorganic film includes a first cut portion overlapping the first connection line, a second cut portion overlapping the second connection line, and a first extension portion between the first cut portion and the second cut portion, and the first cut portion, the second cut portion, and the first extension portion extend to a first side of the panel.