Abstract: A radio frequency module includes a mounting substrate, a low-noise amplifier including an amplifying element and amplifying a radio frequency signal, and an impedance matching circuit including an integrated first inductor, in which the first inductor is connected to an input terminal of the low-noise amplifier, the low-noise amplifier and the impedance matching circuit are laminated in a direction perpendicular to a main surface of the mounting substrate, and a first multilayer body on which the low-noise amplifier and the impedance matching circuit are laminated is mounted on the main surface.

Abstract: A high frequency module includes a transmission power amplifier, a bump electrode connected to a principal surface of the transmission power amplifier and having an elongated shape in a plan view of the principal surface, and a mounting board on which the transmission power amplifier is mounted, wherein the mounting board includes a via conductor having an elongated shape in the plan view, the length direction of the bump electrode and the length direction of the via conductor are aligned in the plan view, and the bump electrode and the via conductor are connected in an overlapping area where the bump electrode and the via conductor overlap at least partially in the plan view, and the overlapping area is an area elongated in the length direction.

Abstract: A high frequency module includes a transmission power amplifier, a bump electrode connected to the transmission power amplifier, and a mounting board on which the transmission power amplifier is mounted, wherein the mounting board includes a via conductor having an elongated shape in the plan view of the mounting board, a board main part placed outside the via conductor, and an insulating part placed inside the via conductor, and the bump electrode and the via conductor are connected while at least partially overlapping each other in the foregoing plan view, and the board main part and the insulating part are each composed of an insulating material of the same kind.

Abstract: A radio-frequency module includes: a transmission power amplifier that includes first and second amplification transistors that are cascade connected to each other; and a mounting substrate that has first and second main surface that face each other, the transmission power amplifier being mounted on the first main surface. The first amplification transistor is arranged in a final stage and has a first emitter terminal. The second amplification transistor is arranged in a stage preceding the first amplification transistor and has a second emitter terminal. The mounting substrate has first to fourth ground electrode layers in order of proximity to the first main surface. The first emitter terminal and the second emitter terminal are not electrically connected to each other via an electrode on the first main surface and are not electrically connected to each other via the first ground electrode layer.

Abstract: A high-frequency module includes a mounting substrate, electronic components, a sealing resin, and land conductors. The mounting substrate includes a front surface, a rear surface, and a side surface. The land conductors are provided on the rear surface. The electronic components are mounted on the front surface of the mounting substrate. A distance between the mounting surface of the land conductor near the side surface and the rear surface of the mounting substrate is larger than a distance between the mounting surface of the land conductor closer to the center than the land conductor near the side surface and the rear surface of the mounting substrate.

Abstract: A high-frequency front-end circuit (10) includes a band switch (20), duplexers (31, 32, and 33), and a main switch (40). The band switch (20) includes a common terminal (PC20) and selection terminals (PS21, PS22, and PS23). The main switch (40) includes a common terminal (PC40) and selection terminals (PS41, PS42, PS43). The duplexers (31, 32, and 33) are connected between the selection terminals (PS21 and PS41), between the selection terminals (PS22 and PS42), and between the selection terminals (PS23 and PS43), respectively. The selection terminal (PS23) is connected between the selection terminals (PS21 and PS22) and the selection terminal (PS43) is connected between the selection terminals (PS41 and PS42). First and second communication bands the frequency bands of which are close to or overlapped with each other are transmitted and received through the duplexers (31 and 32).

Abstract: A high frequency switch module (10) includes a switch device (20), a first inductor (30), and a filter device (40). The switch device (20) includes a shared terminal (P00) and selection target terminals (P02, P03) that are selectively connected to the shared terminal. The filter device (40) includes SAW filters (41, 42) connected to the selection target terminal (P02) and the selection target terminal (P03), respectively. A terminal of the SAW filters (41, 42) on the opposite side to the selection target terminals (P02, P03) is shared and connected to a front-end terminal (Pfe). The first inductor (30) is connected between the selection target terminal (P02) and the selection target terminal (P03).

Abstract: A high-frequency switch module (10) includes a switch element (20) and LC parallel resonant circuits (31 and 32). The switch element (20) includes selection target terminals (P14 and P21) used to transmit communication signals using different frequencies. The LC parallel resonant circuits (31 and 32) are connected between a connection conductor (901) connected to the selection target terminal (P14) and a connection conductor (902) connected to the selection target terminal (P21). The LC parallel resonant circuits (31 and 32) are connected in series between the connection conductors (901 and 902). The LC parallel resonant circuits (31 and 32) have different attenuation pole frequencies.

Abstract: A front-end circuit includes an insulating substrate, a power amplifier, a receiver circuit device, and a shielding conductor. The power amplifier and the receiver circuit device are mounted on a top surface of the insulating substrate. The shielding conductor covers a part of the insulating substrate at the top surface side. A transmitter circuit region (Retx) where the power amplifier is mounted is arranged closer to a first side surface side than a second side surface. A receiver circuit region (Rerx) where the receiver circuit device is mounted is arranged between the transmitter circuit region (Retx) and the second side surface. The shielding conductor includes a top surface side conductor covering the transmitter circuit region (Retx) and a first side surface side conductor covering the first side surface side of the transmitter circuit region (Retx).

Abstract: A high-frequency switch module (10) includes a switch element (20) and an inductor (30). The switch element (20) includes a Hi band common terminal (P10), a Low band common terminal (P20), a plurality of selection target terminals (P11 to P14) that are selectively connected to the common terminal (P10), and a plurality of selection target terminals (P21 to P24) that are selectively connected to the common terminal (P20). The inductor (30) is connected between a first selection target terminal (P14) of the selection target terminals (P11 to P14) and a selection target terminal (P21) of the selection target terminals (P21 to P24). The selection target terminal (P14) and the selection target terminal (P21) are simultaneously used terminals that are used for electric paths through which transmission or reception using a plurality of communication bands is performed at the same time.

Abstract: A high-frequency module includes a branching circuit element, a multilayer substrate, and a shield conductor. The branching circuit element includes transmission and receiving terminals and is disposed on a surface of the multilayer substrate. The shield conductor is disposed on the side of the surface of the multilayer substrate and covers the branching circuit element. The transmission and receiving terminals are disposed with respect to the shield conductor such that a signal in at least a portion of the frequency band of a first signal, which is transmitted from the transmission terminal, is cancelled by a second signal at the receiving terminal.

Abstract: A high-frequency switch module includes a switch element, a filter element, an inductor, and first and second transmission conductors. The switch element includes a common terminal and first and second selected terminals selectively connected to the common terminal. The first transmission conductor connects the first selected terminal and a SAW filter of the filter element. The second transmission conductor connects the second selected terminal and a SAW filter of the filter element. The inductor is connected between the first and second transmission conductors. A separation distance between at least a portion of the first transmission conductor and a portion of the second transmission conductor is shorter than a separation distance between a land conductor of the first selected terminal and a land conductor of the second selected terminal, and the transmission conductors are capacitively coupled.

Abstract: A front-end circuit includes an insulating substrate, a power amplifier, a receiver circuit device, and a shielding conductor. The power amplifier and the receiver circuit device are mounted on a top surface of the insulating substrate. The shielding conductor covers a part of the insulating substrate at the top surface side. A transmitter circuit region (Retx) where the power amplifier is mounted is arranged closer to a first side surface side than a second side surface. A receiver circuit region (Rerx) where the receiver circuit device is mounted is arranged between the transmitter circuit region (Retx) and the second side surface. The shielding conductor includes a top surface side conductor covering the transmitter circuit region (Retx) and a first side surface side conductor covering the first side surface side of the transmitter circuit region (Retx).

Abstract: A multilayer substrate includes a component mounting electrode, an external mounting electrode, and a heat dissipating unit. The component mounting electrode is connected to an electronic component that is connected to an external structure. The heat dissipating unit is constituted by a plurality of via-conductors partially superposed each other in a stacking direction of the multilayer substrate and disposed continuously between the component mounting electrode and the external mounting electrode. The heat dissipating unit includes communicating portions, each in which one via-conductor is disposed per ceramic layer, and a branching portion in which a plurality of via-conductors are disposed continuously between the communicating portions per ceramic layer.

Abstract: A high frequency module includes an insulating substrate, a mountable element, and a shield conductor. The mountable element is mounted to a surface of the insulating substrate and includes a first mounting terminal. The shield conductor covers the mountable element in a spaced relationship to the mountable element. An exposing portion in which at least the first terminal is exposed is provided in the shield conductor, and a linear distance from the first terminal to the exposing portion is shorter than a linear distance from the first terminal to the shield conductor.

Abstract: A high-frequency module includes a branching circuit element, a multilayer substrate, and a shield conductor. The branching circuit element includes transmission and receiving terminals and is disposed on a surface of the multilayer substrate. The shield conductor is disposed on the side of the surface of the multilayer substrate and covers the branching circuit element. The transmission and receiving terminals are disposed with respect to the shield conductor such that a signal in at least a portion of the frequency band of a first signal, which is transmitted from the transmission terminal, is cancelled by a second signal at the receiving terminal.

Abstract: A high-frequency front-end circuit includes first and second switching circuits, first, second, and third splitters, and first and second lines. The first line is connected to the second splitter. The second line is connected to the third splitter. An adjustment circuit is connected between the first and second lines. The frequency of a harmonic signal of a transmission signal transmitted through the first line has a frequency band that is close to or overlaps the frequency of a reception signal transmitted through the second line. The impedance of the adjustment circuit is set such that a harmonic signal transmitted from the adjustment circuit to the second line and a harmonic signal transmitted from the third splitter to the second line are not in same phase with each other at the connection point between the adjustment circuit and the second line.

Abstract: An interlayer connection conductor penetrates through first layers of a multilayer body and projects from an upper surface. In a component mounting substrate, the projection length of the interlayer connection conductor from the upper surface in the lamination direction is adjusted such that a difference between a connection position of the interlayer connection conductor and a conductive bonding portion and a connection position of a connection electrode and a conductive bonding portion in the lamination direction is a difference. A difference between the length of the conductive bonding portion and the length of the conductive bonding portion in the lamination direction is canceled by the difference. As a result, the upper surface and a lower surface are parallel with each other to prevent a high-frequency component from tilting with respect to a mounting substrate, thereby preventing electric connection failure and lowering of bonding strength due to the tilt.

Abstract: A high-frequency front end circuit includes a duplexer, a phase adjustment circuit, and a power amplifier. The phase adjustment circuit is connected between the power amplifier and a transmission filter of the duplexer. The phase adjustment circuit carries out phase adjustment so that a quadrant in which an impedance ZRX (fr0) seen from the transmission filter toward the power amplifier at the fundamental frequency of a reception signal is present and a quadrant in which an impedance ZTX (fr0) seen from the power amplifier toward the transmission filter at the fundamental frequency of the reception signal is present are not in a conjugate relationship with respect to the phase.

Abstract: A radio frequency front-end circuit includes a duplexer, a phase adjustment circuit, and a low noise amplifier. The phase adjustment circuit is connected between an Rx filter of the duplexer and the low noise amplifier. The phase adjustment circuit executes phase adjustment such that a quadrant in which an impedance ZLNA(fn) at a particular frequency different from a fundamental frequency of a reception signal when looking at the low noise amplifier side from the Rx filter is present and a quadrant in which an impedance ZRX(fn) at the particular frequency when looking at the Rx filter side from the low noise amplifier is present are not in a conjugate relation in terms of phase.