Abstract: To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission and a manufacturing method thereof, the light-emitting device includes a GaN substrate and a light-emitting layer including an InAlGaN quaternary alloy on a side of a first main surface of GaN substrate.

Abstract: A ZnSe light emitting device emitting light from an output face comprises an n-type ZnSe substrate including self-activated radiative recombination centers (SA), an active layer formed en above the n-type ZnSe substrate, and an Al layer provided the opposite side to the output face and serving to reflect light toward the output face. The emitted light is effectively used, the luminance is high, and the chromaticity of the white light emitting device can be easily adjusted.

Abstract: A system for fabricating a compound semiconductor device includes a gas treatment apparatus that performs a hydrogen chloride gas etching on a compound semiconductor substrate, a radical treatment apparatus that performs a radical hydrotreatment on the substrate, a semiconductor film forming apparatus that forms a compound semiconductor film on the treated substrate, a conductive film forming apparatus that forms a conductive film on the substrate, and an ultrahigh vacuum transfer path that connects together the several apparatuses so that the substrate being processed can be transferred through the transfer path from apparatus to apparatus under a continuously maintained ultrahigh vacuum environment. Some of the apparatuses can overlap or share functions with one another.

Abstract: A sheet conveying device comprises a conveying mechanism for conveying a sheet material almost horizontally; and a supporting member movably attached to the conveying mechanism for supporting a sheet material, at least two or more supporting members being provided as aforesaid supporting member in the widthwise direction of conveyance substantially orthogonal to the conveying direction of sheet material, and at least one or more of the aforesaid supporting members being capable of supporting a sheet material in positions having different heights in the direction substantially perpendicular to the sheet material, and further, the positions of the aforesaid supporting members for supporting a sheet material being variable substantially in the same direction as the conveying direction of sheet material.

Abstract: The present invention has provided a human-derived novel G protein-coupled receptor protein expressed in the brain, rat-derived protein corresponding to it, and their genes. Use of the receptors makes it possible to screen their ligands and compounds that are candidates for medicines. These ligands and candidate compounds would be useful in the diagnosis and treatment of diseases arising from disorders of signal transduction pathway mediated by the G protein-coupled receptor of the invention.

Abstract: The present inventors conducted a similarity search of the amino acid sequence of known G protein-coupled receptor proteins in GenBank, and obtained a novel human GPCR gene “BG37”. cDNA containing the ORF of the gene was cloned and its nucleotide sequence was determined. Moreover, novel GPCR “BG37” genes from mouse and rat were isolated. Use of the novel GPCR of the present invention enables screening of ligands, compounds inhibiting the binding to a ligand, and candidate compounds of pharmaceuticals which can regulate signal transduction from the “BG37” receptor.

Abstract: A blue-violet-near-ultraviolet pin-photodiode with small dark current, high reliability and long lifetime. The pin-photodiode has a metallic n-electrode, a n-ZnSe single crystal substrate, an optionally added n-ZnSe buffer layer, an n-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, a p-Zn1-xMgxSySe1-y layer, a p-(ZnTe/ZnSe)m SLE, a p-ZnTe contact layer, an optionally provided antireflection film and a metallic p-electrode. A blue-violet-near-ultraviolet avalanche photodiode with small dark current, high reliability and long lifetime. The avalanche photodiode has a metallic n-electrode, a n-ZnSe single crystal substrate, an optionally added n-ZnSe buffer layer, an n-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, a p-Zn1-xMgxSySe1-y layer, a p-(ZnTe/ZnSe)m SLE, a p-ZnTe contact layer, an optionally provided antireflection film and a metallic p-electrode. Upper sides of the layered structure are etched into a mesa-shape and coated with insulating films.

Abstract: A method for embedding digital watermark data in digital data contents includes the steps of obtaining a frequency coefficient of block data of digital data contents, obtaining a complexity of the block data, obtaining an amount of transformation of the frequency coefficient from the complexity and the digital watermark data, and embedding the digital watermark data by transforming the frequency coefficient. In addition, a method for reading digital watermark data includes the steps of calculating a probability of reading ‘1’ or ‘0’ in a read bit sequence by using a test method on the basis of binary distribution, determining the presence or absence of digital watermark data according to the probability, and reconstituting digital watermark data. Another method includes the steps of performing soft decision in code theory by assigning weights to the digital watermark sequence with a weighting function, and reconstituting digital watermark data.

Abstract: A recording apparatus for effecting recording on a recording material by recording means, the apparatus includes a tray, mountable to the recording apparatus, for stacking a recording material; a feeding roller for feeding the tray; a portion to be detected, provided on the tray to permit detection of a position of the tray; a tray position detecting portion for detecting the portion to be detected; wherein a position of recording material stacked on the tray is detected by detecting the position of the portion to be detected.

Abstract: A method for embedding digital watermark data in digital data contents includes the steps of obtaining a frequency coefficient of block data of digital data contents, obtaining a complexity of the block data, obtaining an amount of transformation of the frequency coefficient from the complexity and the digital watermark data, and embedding the digital watermark data by transforming the frequency coefficient. In addition, a method for reading digital watermark data includes the steps of calculating a probability of reading ‘1’ or ‘0’ in a read bit sequence by using a test method on the basis of binary distribution, determining the presence or absence of digital watermark data according to the probability, and reconstituting digital watermark data. Another method includes the steps of performing soft decision in code theory by assigning weights to the digital watermark sequence with a weighting function, and reconstituting digital watermark data.

Abstract: A blue-ultraviolet on-p-GaAs substrate pin Zn1-xMgxSySe1-y photodiode with high quantum efficiency, small dark current, high reliability and a long lifetime. The ZnMgSSe photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe)m superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, an n-Zn1-xMgxSySe1-y layer, an n-electrode and an optionally provided antireflection film. Incidence light arrives at the i-layer without passing ZnTe layers. Since the incidence light is not absorbed by ZnTe layers, high quantum efficiency and high sensitivity are obtained.

Abstract: The present invention relates to a recording apparatus provided with recording device for effecting recording on a sheet which has sheet containing device provided detachably attachably to a main body of the apparatus, sheet supporting device disposed in the sheet containing device, for supporting the sheet, lift device for lifting the sheet supporting device from the sheet containing device in operative association with an operation of attaching the sheet containing device to the main body of the apparatus, and sheet feeding device for feeding the sheet from the sheet feeding device for feeding the sheet from the sheet supporting device lifted by the lift device toward the recording device.

Abstract: Thin film transistors for a display device each include a semiconductor layer made of polysilicon having a channel region, drain and source regions at both sides of the channel region and doped with impurity of high concentration, and an LDD region arranged either between the drain region and the channel region or between the source region and the channel region and doped with impurity of low concentration. An insulation film is formed over an upper surface of the semiconductor layer and has a film thickness which decreases in a step-like manner as it extends to the channel region, the LDD region, the drain and the source regions; and a gate electrode is formed over the channel region through the insulation film. Such a constitution can enhance the numerical aperture and can suppress the magnitude of stepped portions in a periphery of the thin film transistor.

Abstract: Content data and metadata are obtained and reproduced, and combination interface information defining information necessary for executing combination operation on the contents is generated. The combination operation on the contents is controlled by following combination data definition based on the combination interface information and, as necessary, by using external input information entered from an external unit. The combination feedback information for controlling the reproduction operation of the contents and metadata is generated, and the reproduction operation on the contents is controlled based on the combination feedback information.

Abstract: Thin film transistors for a display device each include a semiconductor layer made of polysilicon having a channel region, drain and source regions at both sides of the channel region and doped with impurity of high concentration, and an LDD region arranged either between the drain region and the channel region or between the source region and the channel region and doped with impurity of low concentration. An insulation film is formed over an upper surface of the semiconductor layer and has a film thickness which decreases in a step-like manner as it extends to the channel region, the LDD region, the drain and the source regions; and a gate electrode is formed over the channel region through the insulation film. Such a constitution can enhance the numerical aperture and can suppress the magnitude of stepped portions in a periphery of the thin film transistor.

Abstract: A light emitting-layer is provided on a substrate. A p-type semiconductor layer is provided on the light-emitting layer. An upper electrode is provided on the p-type semiconductor layer. The upper electrode includes an Au thin film coming into contact with the p-type semiconductor layer and an n-type transparent conductor film formed thereon. The n-type transparent conductor film is formed by laser ablation. Particularly, the method involves placing a substrate in a vacuum chamber, placing a target of the film material in the chamber, introducing oxygen into the chamber, laser-irradiating the target to emit atoms or molecular ions by ablation, and then depositing and oxidizing the atoms or ions to grow the transparent conductor film.

Abstract: A color cathode ray tube has an electron gun, a phosphor screen, and a shadow mask closely spaced from the phosphor screen. The shadow mask has plural strips extending in a direction perpendicular to a horizontal scanning direction of electron beams emitted from the electron gun and plural bridge portions connecting adjacent ones among the plural strips. The shadow mask is formed with an aperture area having plural slot-shaped electron beam apertures therein. The shadow mask is provided with at least one wire held under tension in the extending direction of the plural strips so as to be superposed on a surface of one of the plural strips in the aperture area. The surface of the one of the plural strips is a surface of the one of the plural strips facing the electron gun.

Abstract: A system for fabricating a compound semiconductor device includes a gas treatment apparatus that performs a hydrogen chloride gas etching on a compound semiconductor substrate, a radical treatment apparatus that performs a radical hydrotreatment on the substrate, a semiconductor film forming apparatus that forms a compound semiconductor film on the treated substrate, a conductive film forming apparatus that forms a conductive film on the substrate, and an ultrahigh vacuum transfer path that connects together the several apparatuses so that the substrate being processed can be transferred through the transfer path from apparatus to apparatus under a continuously maintained ultrahigh vacuum environment. Some of the apparatuses can overlap or share functions with one another.

Abstract: A blue-violet-near-ultraviolet pin-photodiode with small dark current, high reliability and long lifetime. The pin-photodiode has a metallic n-electrode, a n-ZnSe single crystal substrate, an optionally added n-ZnSe buffer layer, an n-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, a p-Zn1-xMgxSySe1-y layer, a p-(ZnTe/ZnSe)m SLE, a p-ZnTe contact layer, an optionally provided antireflection film and a metallic p-electrode.

Abstract: A sheet conveying device comprises a conveying mechanism for conveying a sheet material almost horizontally; and a supporting member movably attached to the conveying mechanism for supporting a sheet material, at least two or more supporting members being provided as aforesaid supporting member in the widthwise direction of conveyance substantially orthogonal to the conveying direction of sheet material, and at least one or more of the aforesaid supporting members being capable of supporting a sheet material in positions having different heights in the direction substantially perpendicular to the sheet material, and further, the positions of the aforesaid supporting members for supporting a sheet material being variable substantially in the same direction as the conveying direction of sheet material.