Abstract: A gallium nitride-based epitaxial wafer for a nitride light-emitting device comprises a gallium nitride substrate having a primary surface, a gallium nitride-based semiconductor film provided on the primary surface of the gallium nitride substrate, and, an active layer provided on the gallium nitride-based semiconductor film, the active layer having a quantum well structure. The active layer includes a well layer of a gallium nitride-based semiconductor. The gallium nitride-based semiconductor contains indium as a Group III element. A normal line of the primary surface and a C-axis of the gallium nitride substrate form an off angle with each other. The off angle is distributed on the primary surface, and the off angle monotonically increases on the line that extends from one point to another point through a center point of the primary surface of the gallium nitride substrate.

Abstract: In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 ?·cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface.

Abstract: In step S106, an InXGa1-XN well layer is grown on a semipolar main surface between times t4 and t5 while a temperature in a growth furnace is maintained at temperature TW. In step S107, immediately after completion of the growth of the well layer, the growth of a protective layer covering the main surface of the well layer is initiated at temperature TW. The protective layer is composed of a gallium nitride-based semiconductor with a band gap energy that is higher than that of the well layer and equal to or less than that of a barrier layer. In step S108, the temperature in the furnace is changed from temperatures TW to TB before the barrier layer growth. The barrier layer composed of the gallium nitride-based semiconductor is grown on the protective layer between times t8 and t9 while the temperature in the furnace is maintained at temperature TB.

Abstract: A digital watermark embedding apparatus of the present invention includes: a block dividing unit for dividing an input image into plural pixel blocks; a digital watermark information spreading unit for obtaining an embedding series having a length corresponding to a number of divided pixel blocks; a block-by-block embedding unit for selecting at least a frequency from predetermined plural frequencies according to a term value of the embedding series corresponding to a position of a pixel block in the image, amplifying amplitude of a waveform pattern corresponding to the selected frequency with an embedding strength value, and superimposing the waveform pattern in which the amplitude is amplified on the pixel block; and an image outputting unit for outputting an image on which a corresponding waveform pattern is superimposed on each pixel block by the block-by-block embedding unit.

Abstract: A substrate inspection method allowing inspection of all a plurality of substrates each provided at its surface with a plurality of layers by determining quality of the plurality of layers as well as methods of manufacturing the substrate and an element using the substrate inspection method are provided. The substrate inspection method includes a step of preparing the substrate provided at its main surface with the plurality of layers, a film forming step, a local etching step, and an inspection step or a composition analysis step. In the step, a concavity is formed in a region provided with an epitaxial layer of the main surface of the substrate by removing at least partially the epitaxial layer. In the inspection step, the inspection is performed on the layer exposed in the concavity.

Abstract: A method for embedding digital watermark data in digital data contents includes the steps of obtaining a frequency coefficient of block data of digital data contents, obtaining a complexity of the block data, obtaining an amount of transformation of the frequency coefficient from the complexity and the digital watermark data, and embedding the digital watermark data by transforming the frequency coefficient. In addition, a method for reading digital watermark data includes the steps of calculating a probability of reading ‘1’ or ‘0’ in a read bit sequence by using a test method on the basis of binary distribution, determining the presence or absence of digital watermark data according to the probability, and reconstituting digital watermark data. Another method includes the steps of performing soft decision in code theory by assigning weights to the digital watermark sequence with a weighting function, and reconstituting digital watermark data.

Abstract: Provided are a method of growing a group III-V compound semiconductor, and method of manufacturing a light-emitting device and an electron device, in which risks are reduced and nitrogen can be efficiently supplied at low temperatures. The method of growing a group III-V compound semiconductor includes the following processes. First, gas containing at least one selected from the group consisting of monomethylamine and monoethylamine is prepared as a nitrogen raw material. Then, the group III-V compound semiconductor is grown using the gas by vapor phase growth.

Abstract: Content data and metadata are obtained and reproduced, and combination interface information defining information necessary for executing combination operation on the contents is generated. The combination operation on the contents is controlled by following combination data definition based on the combination interface information and, as necessary, by using external input information entered from an external unit. The combination feedback information for controlling the reproduction operation of the contents and metadata is generated, and the reproduction operation on the contents is controlled based on the combination feedback information.

Abstract: An IP address and a MAC address of each of communication devices connected to a plurality of communication ports provided in a switching hub device are associated in an ARP table. Also, priority information representing the communication priority of each communication device is received, and the received priority information is associated with the MAC address of the communication device. When no IP address of a transmission source included in a data packet received at each communication port exists in the ARP table, the IP address and the MAC address of the transmission source are added to the ARP table and priority information is attached to the ARP table.

Abstract: The semiconductor light generating device comprises a light generating region 3, a first AlX1Ga1-X1N semiconductor (0?X1?1) layer 5 and a second AlX2Ga1-X2N semiconductor (0?X2?1) layer 7. In this semiconductor light generating device, the light generating region 3 is made of III-nitride semiconductor, and includes a InAlGAN semiconductor layer. The first AlX1Ga1-X1N semiconductor (0?X1?1) layer 5 is doped with a p-type dopant, such as magnesium, and is provided on the light generating region 3. The second AlX2Ga1-X2N semiconductor layer 7 has a p-type concentration smaller than the first AlX1Ga1-X1N semiconductor layer 5. The second AlX2Ga1-X2N semiconductor (0?X2?1) layer 7 is provided between the light generating region 3 and the first AlX1Ga1-X1N semiconductor layer 5.

Abstract: A digital watermark embedding apparatus for embedding embedding information, as digital watermark, into an input signal having dimensions equal to or greater than N (N is an integer equal to or greater than 2) and a digital watermark detection apparatus for detecting the digital watermark are disclosed. The digital watermark embedding apparatus generates an embedding sequence based on embedding information, generates a N?1-dimensional pattern based on the embedding sequence, generates N-dimensional embedding pattern by modulating a periodic signal according to a value on the N?1-dimensional pattern, and superimposing the embedding pattern in the input signal and outputs it.

Abstract: A digital watermark embedding apparatus for embedding digital watermark information by superimposing macroblock patterns on an image is disclosed. The digital watermark embedding apparatus: spreads input digital watermark information to obtain an embedding series having a length corresponding to a number of pixel blocks of a macroblock pattern; selects at least a frequency from among predetermined plural frequencies according to a term value of the embedding series corresponding to a position of a pixel block in the macroblock pattern, and sets a waveform pattern corresponding to the selected frequency as a pixel of the pixel block; and amplifies, with an embedding strength value, the macroblock pattern on which a waveform pattern is superimposed on each pixel block by the waveform pattern setting unit, and superimposes the macroblock pattern on an input image like a tile.

Abstract: A communication device includes a radio frequency identification tag that performs a radio communication with a predetermined device. A first metal body has an electrical conductivity. A space adjustment unit is configured to adjust a space between the first metal body and the radio frequency identification tag. The first metal body is configured to be replaced with a second metal body, and when the first metal body is replaced with the second metal body, the space adjustment unit is configured to adjust a space between the second metal body and the radio frequency identification tag.

Abstract: The present invention provides a therapeutic agent for diabetes comprising a compound directly activating glycogen synthase as an active ingredient. The present invention further provides a method for screening compounds directly activating glycogen synthase.

Abstract: In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 ?·cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface.

Abstract: Thin film transistors for a display device each include a semiconductor layer made of polysilicon having a channel region, drain and source regions at both sides of the channel region and doped with impurity of high concentration, and an LDD region arranged either between the drain region and the channel region or between the source region and the channel region and doped with impurity of low concentration. An insulation film is formed over an upper surface of the semiconductor layer and has a film thickness which decreases in a step-like manner as it extends to the channel region, the LDD region, the drain and the source regions; and a gate electrode is formed over the channel region through the insulation film. Such a constitution can enhance the numerical aperture and can suppress the magnitude of stepped portions in a periphery of the thin film transistor.

Abstract: A digital watermark embedding apparatus of the present invention includes: a block dividing unit for dividing an input image into plural pixel blocks; a digital watermark information spreading unit for obtaining an embedding series having a length corresponding to a number of divided pixel blocks; a block-by-block embedding unit for selecting at least a frequency from predetermined plural frequencies according to a term value of the embedding series corresponding to a position of a pixel block in the image, amplifying amplitude of a waveform pattern corresponding to the selected frequency with an embedding strength value, and superimposing the waveform pattern in which the amplitude is amplified on the pixel block; and an image outputting unit for outputting an image on which a corresponding waveform pattern is superimposed on each pixel block by the block-by-block embedding unit.

Abstract: A full-length cDNA encoding a human-derived G protein-coupled receptor protein is isolated by screening a human hippocampus library. Also, a rat-derived cDNA corresponding to the human-derived cDNA is isolated. Proteins encoded by these cDNAs have an activity of lowering intracellular cAMP concentration under stimulation with histamine. These proteins are usable as tools in screening ligands thereof or in screening candidate compounds for drugs capable of regulating signal transduction from the above proteins.

Abstract: A digital watermark embedding method of the present invention includes: a step of sequentially obtaining each frame image of the moving image data and frame display time; a step of generating a watermark pattern using watermark information, the frame display time and watermark pattern switching information; a step of superimposing the watermark pattern onto the frame image, and combining watermark embedded frame images obtained by sequentially repeating the processes to generate watermark embedded moving image data. A digital watermark detection method includes a step of sequentially obtaining a frame image; a step of generating a difference image between the currently obtained frame image and a previously obtained frame image; and a step of performing digital watermark detection from the difference image to output digital watermark detection status, and when digital watermark detection process is continued, obtaining a new frame again to repeat the above processes.

Abstract: The semiconductor light generating device comprises a light generating region 3, a first AlX1Ga1-X1N semiconductor (0?X1?1) layer 5 and a second AlX2Ga1-X2N semiconductor (0?X2?1) layer 7. In this semiconductor light generating device, the light generating region 3 is made of III-nitride semiconductor, and includes a InAlGAN semiconductor layer. The first AlX1Ga1-X1N semiconductor (0?X1?1) layer 5 is doped with a p-type dopant, such as magnesium, and is provided on the light generating region 3. The second AlX2Ga1-X2N semiconductor layer 7 has a p-type concentration smaller than the first AlX1Ga1-X1N semiconductor layer 5. The second AlX2Ga1-X2N semiconductor (0?X2?1) layer 7 is provided between the light generating region 3 and the first AlX1Ga1-X1N semiconductor layer 5.