Abstract: A method of fabricating a compound semiconductor device having an ohmic electrode of a low contact potential includes a first cleaning step of heating a compound semiconductor substrate containing a first conductivity type impurity in a temperature range of not more than 250° C. and etching its surface with hydrogen chloride at the temperature of not more than 250° C., and a second cleaning step of performing a radical hydrotreatment on the compound semiconductor substrate at a temperature not more than 250° C., after the first cleaning step. The first cleaning step removes an oxide film but leaves chlorine on the surface of the substrate. The second cleaning step removes the chlorine. The temperature of not more than 250° C. avoids damaging other layers such as an active layer on the opposite surface of the substrate.

Abstract: The invention provides a method for preparing a layered structure comprising a lower thin film composed of an oxide superconductor and an upper thin film composed of a material different from the oxide superconductor on a substrate. The lower thin film is deposited by a molecular beam deposition process and the upper thin film is deposited by a process having a deposition rate faster than that of the molecular beam deposition process.

Abstract: A sheet feeding apparatus includes a sheet stacking unit, sheet feeding unit, and a sheet support member. Sheets are stacked on the sheet stacking unit. The sheet feeding unit is placed to be movable in the widthwise direction of the sheets stacked on the sheet stacking unit and feeds the sheets stacked on the sheet stacking unit. The sheet support member is placed at a position different from the position of the sheet feeding unit within an area where the sheet feeding unit can move, and supports the sheets stacked on the sheet stacking unit. The sheet support member can move in the widthwise direction of the sheet independently of the sheet feeding unit.

Abstract: The present inventors isolated a cDNA which encodes a novel human G protein-coupled receptor protein, by deducing a unique region highly conserved among known G protein-coupled receptor proteins and screening cDNAs by using the probe corresponding to the region. The G protein-coupled receptor protein of the present invention can be used to screen for ligands and candidate pharmaceutical compounds capable of modulating the signal transduction mediated by the receptor.

Abstract: Thin film transistors are formed over an insulation substrate which constitutes a display device. Each thin film transistor includes a semiconductor layer made of polysilicon which is comprised of a channel region, drain and source regions which are arranged at both sides of the channel region and are doped with impurity of high concentration, and an LDD region which is arranged at least either between the drain region and the channel region or between the source region and the channel region and are doped with impurity of low concentration, an insulation film which is formed over an upper surface of the semiconductor layer and respectively sequentially decreases a film thickness thereof in a step-like manner as the insulation film is extended to the channel region, the LDD region, the drain and the source regions, and a gate electrode which is formed over the channel region through the insulation film.

Abstract: A full-length cDNA encoding a human-derived G protein-coupled receptor protein is isolated by screening a human hippocampus library. Also, a rat-derived cDNA corresponding to the human-derived cDNA is isolated. Proteins encoded by these cDNAs have an activity of lowering intracellular cAMP concentration under stimulation with histamine. These proteins are usable as tools in screening ligands thereof or in screening candidate compounds for drugs capable of regulating signal transduction from the above proteins.

Abstract: A method of fabricating a compound semiconductor device having an ohmic electrode of a low contact potential and an apparatus for fabricating a compound semiconductor device are obtained. The method comprises a substrate cleaning step including a first cleaning step of heating a compound semiconductor substrate containing a first conductivity type impurity in a temperature range of not more than 250° C. for etching its surface with hydrogen chloride and a second cleaning step of performing a radical hydrotreatment on the compound semiconductor substrate etched with hydrogen chloride after the first cleaning step.

Abstract: A cathode ray tube has a vacuum envelope including a panel portion having a phosphor screen, a neck portion having a stem fused and sealed to one end thereof, and a funnel portion for connecting the other end of the neck portion and the panel portion. The stem has stem pins annularly arrayed, sealed thereto and extending there-through for supporting an electron gun in the neck portion, and a stem mound is raised and formed integrally with the stem around a base of each of the stem pins on an electron-gun-supporting side thereof. The stem is provided with a raised outer circular edge or a flat outer circular edge. A first distance R1 is defined as a distance from a center axis of the neck portion to an inner wall in a region of the neck portion facing a major portion of the electron gun, and a second distance R2 is defined as a distance from the center axis to an outside edge of the stem mound as measured at half an axial height of the stem mound.

Abstract: A process for preparing an oxide superconductor thin film which has a high crystalline, clean and excellent superconductive surface on a substrate by MBE. The MBE is effected under a condition that the substrate is heated and an oxidizing gas is locally supplied to the proximity of the substrate so that the pressure of the proximity of the substrate becomes 6×10−6 to 8×10−5 Torr at a background pressure.

Abstract: An apparatus for embedding information comprises: a blocking step for dividing data to be processed into blocks; an orthogonal transform step for obtaining coefficients by carrying out orthogonal transformation for each block; an embedding coefficient selecting step for determining coefficients in which the watermark-information will be embedded by using a random sequence which is generated by initial value; an information embedding step for sequentially embedding the watermark-information, which has arbitrary length of bits, by quantizing value of said coefficients using a predetermined value for quantization; and an inverse orthogonal transform step for carrying out inverse orthogonal transformation for modified coefficients to form block in which the watermark-information is embedded, as well as combining the divided blocks and reconstructing the original form.

Abstract: A process for preparing an oxide thin film which has a crystalline, clean and smooth surface on a substrate. The process is conducted by using an apparatus comprising a vacuum chamber in which an oxidizing gas of O2 including O3 can be supplied near the substrate so that pressure around the substrate can be increased while maintaining high vacuum near an evaporation source and Knudsen cell evaporation sources arranged in the vacuum chamber wherein the substrate is heated, molecular beam of constituent atoms of the oxide excluding oxygen are supplied from the K cell evaporation sources, an oxidizing gas is locally supplied to the vicinity of the substrate and a growing thin film is illuminated by ultraviolet.

Abstract: A cathode ray tube has a vacuum envelope including a panel portion having a phosphor screen, a neck portion having a stem fused and sealed to one end thereof, and a funnel portion for connecting the other end of the neck portion and the panel portion. The stem includes plural stem pins annularly arrayed, sealed thereto and extending therethrough for supporting an electron gun in the neck portion. An outside diameter of the neck portion in a region thereof facing a major portion of the electron gun is not more than 29.1 mm. A stem mound is raised and formed integrally with the stem around a base of each of the stem pins on an electron-gun-supporting side thereof. A first distance R1 and a second distance R2 satisfy a relationship, 0<R1-R2<2.

Abstract: A FET type superconducting device comprises a substrate having a principal surface, a thin superconducting channel formed of an oxide superconductor layer over the principal surface of the substrate, a superconducting source region and a superconducting drain region formed of an oxide superconductor layer over the principal surface of the substrate at the both ends of the superconducting channel which connects the superconducting source region and the superconducting drain region, so that superconducting current can flow through the superconducting channel between the superconducting source region and the superconducting drain region and a gate electrode on a gate insulator disposed on the superconducting channel for controlling the superconducting current flowing through the superconducting channel by a signal voltage applied to the gate electrode, wherein the superconducting device is isolated by a isolation layer directly formed on the principal surface of the substrate, the superconducting layer of the su

Abstract: A cathode ray tube includes a panel portion having a phosphor screen, a neck portion having a stem fused and sealed to one end thereof, the stem having a plurality of stem pins annularly arrayed, sealed thereto and extending therethrough for supporting an electron gun in the neck portion and a funnel portion for connecting the other end of the neck and panel portions. A stem mound is raised and formed integrally with the stem around a base of each of the stem pins on an electron-gun-supporting side thereof. A first R1 is defined as a distance from a center axis of portion to an inner wall in a region of the neck portion facing a major portion of the electron gun, a second distance R2 is defined as a distance from the center axis tide edge of the stem mound, measured at half an axis of the stem mound, the first distance R1 and the second distance R2 satisfy a relationship, 0<R1-R2<2.1 mm.

Abstract: In a thin film magnetic disk, a micro projections are formed on a substrate in a circumferential direction. A height of the micro projections is several nm to several tens of nm and a density of the micro projections is several hundred pcs/mm to several tens of thousands of pcs/mm.sup.2. With this arrangement, a magnetic disk fulfilling a head floating characteristic of a narrow space and further fulfilling a mechanical anti-sliding characteristic such as a contact start-stops characteristic and a head stickiness and the like is provided so that high reliability is attained. In the thin film magnetic disk, a bearing ratio curve of a sectional shape measured in a radial direction of the textured substrate has a bearing ratio of 0.1 to 10% at the surface layer (a cutting height of 5 to 10 nm). In this way, a pressure receiving area under a sliding of the magnetic head is increased.

Abstract: A cathode ray tube includes a vacuum envelope formed of a panel portion having a phosphor screen on its inner surface and suspending a shadow mask therein, a neck portion having a stem sealed to one end thereof and a funnel portion for connecting the other end of the neck portion and the panel-portion. The stem has a plurality of stem pins annularly arrayed, sealed thereto and extending therethrough for supporting an electron gun in the neck portion. A stem mound is raised and formed integrally with the stem around a base of each of stem pins on a electron-gun-supporting side thereof. A first distance R1 is defined as a distance from a center axis of the neck portion to an inner wall in a region of the neck portion facing a major portion of the electron gun, a second distance R2 is defined as a distance from the center axis to an outside edge of the stem mound, measured at half an axial height of said stem mound, and a third distance is defined as a distance from an inner wall to the center axis.

Abstract: A FET type superconducting device comprises a thin superconducting channel, a superconducting source region and a superconducting drain region formed of an oxide superconductor over a principal surface of the substrate, and a gate electrode on a gate insulator disposed on the superconducting channel for controlling the superconducting current flowing through the superconducting channel by a signal voltage applied to the gate electrode. The superconducting channel is formed of(Pr.sub.w Y.sub.1-w)Ba.sub.2 Cu.sub.3 O.sub.7-z (0<w<1, 0<z<1) oxide superconductororY.sub.1 Ba.sub.2 Cu.sub.3-v CO.sub.V O.sub.7-u (0<v<3, 0<u<1) oxide superconductor.These oxide superconductors have smaller carrier densities than the conventional oxide superconductor so that the superconducting channel has a larger thickness than the one funned of the conventional oxide superconductor.

Abstract: Patterned superconducting wiring lines each having a portion of a thin film of an oxide superconductor deposited on a flat substrate, the portion having a predetermined crystal orientation (a-axis or c-axis orientation) with respect to a flat surface of the substrate, remaining portions of the thin film of the oxide superconductor having a different crystal orientation (c-axis or a-axis orientation) from the portion and/or having an insulation zones. Both of the portion and the remaining portions have a substantially identical thickness so that the thin film has a substantially flat planar surface.

Abstract: A superconducting device has a substrate, and a superconducting channel provided by an oxide superconductor thin film formed to have an angle with respect to a deposition surface of the substrate. A superconductor source electrode region and a superconductor drain electrode region are formed at opposite ends of the superconducting channel, so that a superconducting current can flow through the superconducting channel between the superconductor source electrode region and the superconductor drain electrode region. A gate electrode region is formed of a oxide superconductor thin film which is deposited in parallel to the deposition surface of the substrate and which has an end portion which abuts with an insulating layer which separates the end portion and the superconducting channel so as to control superconducting current flow through the superconducting channel.

Abstract: The present invention relates to a magnetic disk unit of a high memory capacity wherein a magnetic head and a magnetic disk with a lubricant layer formed on the surface thereof are allowed to perform a relative motion in a mutually contacted state to write and read out information of a high recording density, and the invention is also concerned with the shape and material of the magnetic head suitable for a continual sliding motion of the head on the magnetic disk surface, as well as the lubricant layer formed on the disk surface. According to the present invention, the magnetic head, which has a slider surface of a predetermined curvature, is supported by an arm through a spring and is pushed onto the magnetic disk surface with the lubricant layer formed thereon, then with rotation of the magnetic disk, the lubricant layer liquefies and information is recorded or read out in a contacted state of the head and the disk.