Abstract: A light-emitting device is provided with a light source and a controller. The light source includes multiple light-emitting elements and multiple driving elements that are provided in correspondence with the light-emitting elements and drive the light-emitting elements to light up by going to an ON state. The controller controls a switching between a successive lighting operation that causes the light-emitting elements to light up successively and a simultaneous lighting operation that causes the light-emitting elements to light up simultaneously in parallel. The light source includes a power supply line set to a reference potential or a power supply potential, a driving signal line that is connected to the power supply line and that supplies a driving signal to the driving elements, and a lighting signal line that supplies a lighting signal for causing the light-emitting elements to light up.

Abstract: An air discharge device includes a duct that defines a flow passage through which a working air flow to be discharged passes, and a hole forming member defining an air discharge hole as an outlet of the working air flow. The hole forming member has a vortex generation structure configured to generate an auxiliary vortex having a vortex characteristic including a vortex rotation direction and a vortex axis direction. The vortex characteristic of the auxiliary vortex is different from that of a lateral vortex generated by the working air flow at a downstream side of the air discharge hole. The vortex generation structure is configured in the hole forming member so that the auxiliary vortex collides with the lateral vortex in a state where at least one of the vortex rotation direction and the vortex axial direction of the vortex characteristic is different from that of the lateral vortex.

Abstract: The present invention provides a novel antibody-pyrrolodiazepine derivative and a novel antibody-pyrrolodiazepine derivative conjugate using the same, and a novel CLDN6 and/or CLDN9 antibody.

Abstract: A vacuum processing apparatus includes a decompressable process container; a supply port configured to supply, to the process container, an ionic liquid that absorbs an oxidizing gas; and a discharge port configured to discharge the ionic liquid supplied to the process container. A recess is provided at a joint portion between members constituting the process container. The supply port is configured to supply the ionic liquid to the recess, and the discharge port is configured to discharge the ionic liquid supplied to the recess.

Abstract: The present invention provides means capable of imparting high temporal stability to a hardening aid solution which serves as a raw material and capable of imparting high strength and high quality stability to a hardened body of the self-hardening material, in the hardened body of the self-hardening material that contains a ceramic powder containing Si element at least on the surface thereof.

Abstract: In a method of manufacturing a semiconductor device, the method includes: applying a liquid material containing an ionic liquid on a substrate to form a protective film; transferring at an atmosphere the substrate on which the protective film is formed; and removing the protective film from the substrate that has been transferred at the atmosphere.

Abstract: A sulfide solid electrolyte, which is able to adjust the morphology unavailable traditionally, or is readily adjusted so as to have a desired morphology, the sulfide solid electrolyte having a volume-based average particle diameter measured by laser diffraction particle size distribution measurement of 3 ?m or more and a specific surface area measured by the BET method of 20 m2/g or more; and a method of treating a sulfide solid electrolyte including the sulfide solid electrolyte being subjected to at least one mechanical treatment selected from disintegration and granulation.

Abstract: A sulfide solid electrolyte, which is able to adjust the morphology unavailable traditionally, or is readily adjusted so as to have a desired morphology, the sulfide solid electrolyte having a volume-based average particle diameter measured by laser diffraction particle size distribution measurement of 3 ?m or more and a specific surface area measured by the BET method of 20 m2/g or more; and a method of treating a sulfide solid electrolyte including the sulfide solid electrolyte being subjected to at least one mechanical treatment selected from disintegration and granulation.

Abstract: According to one aspect of the present disclosure, a vacuum processing apparatus includes: a decompressable process container; a supply port that is formed on a side wall of the process container and that is configured to supply, to the process container, an ionic liquid that absorbs an oxidizing gas; and a discharge port configured to discharge the ionic liquid supplied to the process container.

Abstract: A method for increasing the specific surface area of titanium phosphate plate-shaped particles of this invention includes: obtaining a liquid in a state where a powder containing titanium phosphate plate-shaped particles is dispersed in an aqueous alkaline solution.

Abstract: Provided is a method for filtering an additive-containing liquid that can achieve a polishing composition exhibiting excellent defect reducing capability while maintaining a practical filter life. The method for filtering a polishing additive-containing liquid provided by the present invention includes the step of: filtering the polishing additive-containing liquid with a filter that satisfies the following conditions (1) and (2). (1) The average pore diameter P measured by a palm porometer is 0.15 ?m or less. (2) The pore diameter gradient (Sin/Sout), which is the ratio of the inlet-side average pore diameter (SO to the outlet-side average pore diameter (Sout), both diameters being measured through observation with an SEM, is 3 or less.

Abstract: The exposing apparatus according to the present invention for exposing a substrate so as to transfer a pattern formed on an original to the substrate by using exposure light from a light source, includes a substrate stage on which the substrate is mounted, a driving unit configured to drive the substrate stage with a plurality of actuators each configured to apply a thrust to the substrate stage in respective orientations different from each other, and a controller configured to control the driving unit to cause the substrate stage to move in the scanning direction when exposing each of a plurality of shot regions on the substrate, and to cause each of the plurality of actuators to apply the thrust to the substrate stage in at least a part of time duration of each movement in the scanning direction.

Abstract: A method includes a step of performing a selective catalyst treatment by supplying a catalyst solution to an upper surface of an exposed interconnection layer forming a step portion of a stepped shape formed by pair layers stacked to form the stepped shape, the pair layer including an interconnection layer formed on an insulating layer, and a step of selectively growing a metal layer by performing electroless plating on the upper surface of the interconnection layer on which the catalyst treatment is performed.

Abstract: The first apparatus (2100) computes an determination accuracy representing a probability that it is correct to use, as a determination result, the first result. The first apparatus (2100) outputs the first result as the determination result in a case where the determination accuracy is greater than a first threshold value, and outputs a second result as the determination result in a case where the determination accuracy is smaller than a second threshold value. In a case where the determination accuracy is equal to or greater than the second threshold value and is equal to or smaller than the first threshold value, the first apparatus (2100) requests the second apparatus (2200) to perform the predefined determination on the determination target. The first apparatus (2100) updates at least one of the first threshold value and the second threshold value based on the determination result output by the second apparatus (2200).

Abstract: A sulfide solid electrolyte, which is able to adjust the morphology unavailable traditionally, or is readily adjusted so as to have a desired morphology, the sulfide solid electrolyte having a volume-based average particle diameter measured by laser diffraction particle size distribution measurement of 3 ?m or more and a specific surface area measured by the BET method of 20 m2/g or more; and a method of treating a sulfide solid electrolyte including the sulfide solid electrolyte being subjected to at least one mechanical treatment selected from disintegration and granulation.

Abstract: Predictive management of a network buffer is contemplated. The network buffer maybe predictively managed to control packet drop based at least in part on predicted sojourn time. The predicted sojourn time may be determined to predict time needed from an arriving packet to travel through a queue of the network buffer.

Abstract: There is provided a method of fabricating a semiconductor device by performing a process on a substrate, which includes: forming a masking film made of a polymer having a urea bond by supplying polymerizing raw materials to a surface of the substrate on which an etching target film formed; forming an etching pattern on the masking film; subsequently, etching the etching target film with a processing gas using the etching pattern; and subsequently, removing the masking film by heating the substrate to depolymerize the polymer.

Abstract: The first apparatus (2100) computes an determination accuracy representing a probability that it is correct to use, as a determination result, the first result. The first apparatus (2100) outputs the first result as the determination result in a case where the determination accuracy is greater than a first threshold value, and outputs a second result as the determination result in a case where the determination accuracy is smaller than a second threshold value. In a case where the determination accuracy is equal to or greater than the second threshold value and is equal to or smaller than the first threshold value, the first apparatus (2100) requests the second apparatus (2200) to perform the predefined determination on the determination target. The first apparatus (2100) updates at least one of the first threshold value and the second threshold value based on the determination result output by the second apparatus (2200).

Abstract: There is provided a method of fabricating a semiconductor device by performing a process on a substrate, which includes: forming a masking film made of a polymer having a urea bond by supplying polymerizing raw materials to a surface of the substrate on which an etching target film formed; forming an etching pattern on the masking film; subsequently, etching the etching target film with a processing gas using the etching pattern; and subsequently, removing the masking film by heating the substrate to depolymerize the polymer.

Abstract: There is provided a method of fabricating a semiconductor device by performing a process on a substrate, which includes: forming a masking film made of a polymer having a urea bond by supplying polymerizing raw materials to a surface of the substrate on which an etching target film formed; forming an etching pattern on the masking film; subsequently, etching the etching target film with a processing gas using the etching pattern; and subsequently, removing the masking film by heating the substrate to depolymerize the polymer.