Abstract: A headlamp in which a frame member 50 is supported on a lamp body 14 in a vertically swingable fashion, and a lighting device unit 20 is supported on said frame member 50 in a horizontally swingable fashion. A control unit 108 controls the circular movement of said frame member 50 and said lighting device unit 20 in accordance with vehicle running conditions. With such a construction, a beam emitted from said lighting device unit 20 may be vertically and horizontally varied in its direction in accordance with vehicle running conditions.

Abstract: A lead-free solder alloy having a relatively low melting temperature and suitable for use to solder electronic devices consists essentially of: from 7 to 10 wt % of Zn; at least one of from 0.01 to 1 wt % of Ni, from 0.1 to 3.5 wt % of Ag, and from 0.1 to 3 wt % of Cu; optionally at least one of from 0.2 to 6 wt % of Bi, from 0.5 to 3 wt % of In, and from 0.001 to 1 wt % of P; and a balance of Sn. Another such lead-free solder alloy consists essentially of: from 2 to 10 wt % of Zn; from 10 to 30 wt % of Bi; from 0.05 to 2 wt % of Ag; optionally from 0.001 to 1 wt % of P, and a balance of Sn. These solder alloys have a tensile strength of at least 5 kgf/mm2 and at least 10% elongation.

Abstract: An infrared irradiation lamp comprises a lamp housing S formed by a lamp body 12 and a front lens 14, a reflector 16 provided in the lamp body 12, a bulb 20 inserted and attached into a bulb insertion attachment hole 13 of the reflector 16 and provided ahead of the reflector 16, and a cylindrical globe 30 for infrared light formation which is provided to cover the bulb 20 and serves to shield a visible light and to transmit only an infrared light, wherein a metallic bulb holder 60 having a radiation fin 68 extended to the back of the reflector 16 is provided between the bulb insertion attachment hole 13 and a mouth piece 21 of the bulb 20. Heat generated by turning on the bulb 20 is transferred to the bulb holder 60 and is radiated from the radiation fin 68 provided on the back of the reflector 16 to a space provided on the back of the reflector 16 so that the inside of the globe 30 is not filled with the heat.

Abstract: An infrared light irradiation lamp comprises a lighting chamber S formed by a lamp body 12 and a front lens 14, a reflector 16 provided in the lamp body 12, a light source 20 provided ahead of the reflector 16 in the lighting chamber S, and a cylindrical globe 30 for infrared light formation which is provided to cover the light source 20 and serves to shield a visible light and to transmit only an infrared light, wherein diffusion steps 17 and 15 are provided in a peripheral region 16a of the light source in the reflector 16 and/or a region 14a in the front lens 14 corresponding to the peripheral region 16a of the light source in the reflector.

Abstract: A vehicle headlamp includes a lamp body having a hollow portion opening forward, a support member supported tiltably in the lamp body, and a plurality of reflectors supported side by side in one of the vertical and lateral directions by the support member. Each reflector is made to support a corresponding light source and least one of the reflectors is pivotably supported by the support member in the horizontal direction. In one embodiment, a lower reflector is pivotable in the horizontal direction and a low beam is formed by an upper reflector and the light source supported by the upper reflector. In this embodiment, the upper reflector does not have any portion that does not affect luminous distribution.

Abstract: A cylindrical container with a bottom has an opening in which a projection is installed, the projection having a shape which will not deform solder balls when inserted into a packed layer of solder balls within the container. Its shape is such that its cross section has a streamlined or inverted conical shape, or it is cylindrical with a tip having a semi-spherical or inverted conical shape. Blackening, electrical charging, and deformation of solder balls packed in the container can be prevented during transport.

Abstract: A lead-free solder alloy having a relatively low melting temperature and suitable for use to solder electronic devices consists essentially of: from 7 to 10 wt % of Zn; at least one of from 0.01 to 1 wt % of Ni, from 0.1 to 3.5 wt % of Ag, and from 0.1 to 3 wt % of Cu; optionally at least one of from 0.2 to 6 wt % of Bi, from 0.5 to 3 wt % of In, and from 0.001 to 1 wt % of P; and a balance of Sn. Another such lead-free solder alloy consists essentially of: from 2 to 10 wt % of Zn; from 10 to 30 wt % of Bi; from 0.05 to 2 wt % of Ag; optionally from 0.001 to 1 wt % of P, and a balance of Sn. These solder alloys have a tensile strength of at least 5 kgf/mm2 and at least 10% elongation.

Abstract: A lead-free solder alloy having a relatively low melting temperature and suitable for use to solder electronic devices consists essentially of: from 7 to 10 wt % of Zn; at least one of from 0.01 to 1 wt % of Ni, from 0.1 to 3.5 wt % of Ag, and from 0.1 to 3 wt % of Cu; optionally at least one of from 0.2 to 6 wt % of Bi, from 0.5 to 3 wt % of In, and from 0.001 to 1 wt % of P; and a balance of Sn. Another such lead-free solder alloy consists essentially of: from 2 to 10 wt % of Zn; from 10 to 30 wt % of Bi; from 0.05 to 2 wt % of Ag; optionally from 0.001 to 1 wt % of P, and a balance of Sn. These solder alloys have a tensile strength of at least 5 kgf/mm2 and at least 10% elongation.

Abstract: A semiconductor device is disclosed which comprises a semiconductor substrate and an insulating film disposed on the substrate. The insulating film is a oxynitride film prepared by nitriding a thermal oxide film, which has been formed on the substrate, in an atmosphere of nitriding gas. The nitriding is conducted for a nitridation time of 10.sup.6.6-T N.sup./225 seconds or shorter wherein T.sub.N is the nitridation temperature in degree centigrade, or conducted so as to have a nitrogen concentration of about 8 atomic % or less, at least in the vicinity of the interface between the oxynitride film and the substrate. Also disclosed is a method for the production of the semiconductor device.

Abstract: Benzyl alcohol of high purity is produced by supplying benzyl acetate, water and acetic acid to a hydrolysis reactor packed with a solid acid catalyst. The liquid reaction mixture produced, which contains benzyl acetate, water, benzyl alcohol and acetic acid, is supplied to an acetic acid-water recovery column, Benzyl alcohol and benzyl acetate are recovered while acetic acid is removed and returned to the hydrolysis reactor.

Abstract: A process for producing 7-octen-1-al by isomerization of 2,7.octadien-1-ol by feeding 2,7-octadien-1-ol and hydrogen to a reaction zone in the presence of a copper catalyst while controlling the molar ratio of 2,7-octadien-1-ol to hydrogen within a range of 99/1 to 75/25, and effecting isomerization in the gaseous phase. This process ensures a high yield, a high selectivity and stable operation over a long period of time.

Abstract: A reflector 11 to which a discharge bulb 16 is attached is made of a conductive material, and a casing (turn-on circuit casing 30) made of a conductor is attached to a rear-side opening portion of a lamp body enclosing the reflector so that the opening is closed. A grounded shielding tube 21 is provided to enclose the discharge bulb 16, and a grounded extension reflector 3B is disposed at the opening of the reflector 11. At least the reflector 11 and the casing 30 are collectively grounded so that it becomes possible to suppress the electromagnetic waves radiated from the discharge bulb 16 to its circumference.

Abstract: A vehicle headlamp in which a front lens is put in the front opening of a capsule-like lamp body, to thereby form a lamp chamber in the lamp body, and a reflector unit containing a discharge bulb as a light source is provided in the lamp chamber, the vehicle headlamp being characterized in that an opening for bulb exchanging is formed in the rear wall of the lamp body, a cover is removably attached to the opening, and a conductive, electromagnetic wave shielding member, which surrounds at least the rear part of the discharge bulb is provided in the opening.

Abstract: The present invention relates to a process for producing benzyl acetate and benzyl alcohol.Benzyl acetate itself is useful as a solvent and a perfume. Benzyl alcohol which is derived from the benzyl acetate by hydrolysis or by transesterification with methanol is an important compound useful as a powerful solvent, a nontoxic medical additive, and an intermediate compound for agricultural chemicals and medicines.

Abstract: A vehicle lamp having a discharge bulb which prevents radiation of electromagnetic waves toward the forward positions of the lamp. Radiation into the other directions is prevented by shielding members disposed around the lamp. A shade disposed in front of a discharge bulb attached to a reflector is made of metal and a stem of the shade is secured to the reflector in a state where the stem is electrically connected to a socket fixture. The shade is placed at ground potential through the fixture. Thus, the front portion of the discharge bulb is shielded and prevents radiation of the electromagnetic waves to positions in front of the lamp.

Abstract: A semiconductor device is disclosed which comprises a semiconductor substrate and an insulating film disposed on the substrate. The insulating film is a oxynitride film prepared by nitriding a thermal oxide film, which has been formed on the substrate, in an atmosphere of nitriding gas. The nitriding is conducted for a nitridation time of 10.sup.6.6-T.sbsb.N.sup./225 seconds or shorter wherein T.sub.N is the nitridation temperature in degree centigrade, or conducted so as to have a nitrogen concentration of about 8 atomic % or less, at least in the vicinity of the interface between the nitride oxynitride film and the substrate. Also disclosed is a method for the production of the semiconductor device.

Abstract: A cyclic phenol sulfide represented by the following formula (1) is described: ##STR1## wherein X represents a hydrogen atom, a hydrocarbon group, or an acyl group; Y.sub.1 represents a hydrogen atom, a hydrocarbon group, a halogenated hydrocarbon group, --COR.sup.1, --OR.sup.2, --COOR.sup.3, --CN, --CONH.sub.2, --NO.sub.2, --NR.sup.4 R.sup.5, a halogen atom, --SO.sub.4 R.sup.6, or --SO.sub.3 R.sup.7, in which R.sup.11, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, and R.sup.7 each represents a hydrogen atom or a hydrocarbon group; n is an integer of 3 or more; and m is an integer of 1 to 7, provided that the plural m's of the S.sub.m 's are the same or different; the plural X's are the same or different; and the plural Y.sub.1 's are the same or different. A process for producing the cyclic phenol sulfide is also described.

Abstract: A lamp using a discharge bulb as a light source in which the size thereof in axial directions is reduced. A discharge bulb incorporated in a lamp body is used as a light source. A lighting circuit for lighting the discharge bulb is accommodated in a case, and the case is integrated with the lamp body 1. The lighting circuit accommodating case, which is thin-structured, is arranged on the back side of a socket connector of the discharge bulb, and a circuit section constituting the lighting circuit is arranged in an outer circumferential region of the socket connector. Since the lighting circuit is arranged to the rear of the socket connector, it is not necessary to provide a space for arranging the lighting circuit, and therefore the lamp can be made thin. In addition, the discharge bulb can be mounted and removed through a space in the lighting circuit.

Abstract: There are provided a MIS transistor having a substrate portion, a gate, a source, and a drain, a back-bias generator to be applied to the substrate portion of the MIS transistor, and a resistor interposed between the substrate portion of the MIS transistor and the back-bias generator so that the potential between the both ends thereof changes in a range from one value in the active mode to the other value in the standby mode of the MIS transistor. In the MIS transistor, the back bias is self-regulated so that it approaches to zero in the active mode, while it moves away from zero in the standby mode. Consequently, the threshold voltage is reduced in the active mode due to the back bias approaching to zero, so that higher-speed operation is performed. On the other hand, off-state leakage is suppressed in the standby mode due to the back bias moving away from zero. Thus, it becomes possible to constitute a semiconductor apparatus which operates at high speed with low power consumption.

Abstract: Provided between a control gate electrode and a channel region of the EEPROM memory cell is a capacitor. Formed on the channel region are a first gate dielectric layer of silicon oxide, a first carrier capture layer of silicon nitride, a carrier migration layer of n.sup.31 polysilicon, a second carrier capture layer of silicon nitride, and a second gate dielectric layer of silicon oxide. The carrier capture state of the carrier capture layer is changed to generate a polarization state in the capacitor, and the generated polarization state is held as data. The gate dielectric layer is not destroyed since the movement of carriers is limited to within the capacitor, and by adjusting the carrier bound energy, low-voltage drive can be accomplished.