Abstract: A semiconductor device comprising a substrate having thereon a capacitance part and an electrode, the capacitance part having two storage regions for conductive carriers, the storage regions having therebetween a first barrier region of a multi-tunneling structure, a second barrier region being provided among the storage region, semiconductor substrate and electrode, the first barrier region comprising two tunneling barriers and a low barrier region interposed therebetween, so that when the conductive carriers are moved between the storage regions to store memory by use of polarization characteristic, high voltage makes higher probability of conductive carrier shift and low voltage lower probability of the carrier shift in synergistic manner, whereby the semiconductor device having merits of writing, erasing and reading characteristic in DRAMs and flash EEPROMs memories.

Abstract: Disclosed are a semiconductor device possessing an insulating film which is a silicon oxide film containing nitrogen formed on a semiconductor substrate, with the hydrogen concentration ([H]) in this oxide film satisfying the condition of ##EQU1## where m.congruent.2.0.+-.0.4, n.congruent.2.5.+-.0.5k.congruent.2.0.+-.0.4 (at. %).sup.-2[H.sub.ox ]: hydrogen concentration in an ordinary thermally grown silicon oxide film[N]: concentration of nitrogen contained in the interface of oxide film and substrate;and a method for fabricating a semiconductor device comprising the steps of forming a nitrided oxide silicon film by nitrizing a thermally grown silicon oxide film formed on a semiconductor substrate in a nitrizing atmosphere by using a rapid heating furnace, reannealing it in an oxidizing or inert gas atmosphere by using a rapid heating furnace to form a reannealed nitrided oxide insulating film, and forming a gate electrode.

Abstract: A serial printer is disclosed in which a serial printer body is connected to a carriage via a cable. The carriage is driven by electric power supplied through the cable, and signals are also transmitted between the serial printer body and the carriage through the cable. The cable comprises a sheet-like substrate and a plurality of conductive strips which are formed on the sheet-like substrate and which extend in a longitudinal direction of the sheet-like substrate. The plurality of conductive strips includes at least one wide conductive strip for supplying the electric power and at least one narrow conductive strip for transmitting the signals. The wide and narrow conductive strips are arranged such that noise created by the electric power supplied by the wide conductive strip does not interfere with the signals transmitted in the narrow conductive strip.

Abstract: An automatic platen gap adjusting device for a printer for automatically adjusting a relative gap length between a platen and a recording head, and for checking whether the recording head and a recording sheet are in contact after the adjustment.

Abstract: Data at a current address and data preceding and succeeding the current address data are read out by bit data conversion means 11 for converting data received from contour data storing means 1 into bit map data. Left-side data reading means 21 reads data at the digit preceding the current address by one dot from the bit map data (or from print data which has been processed immediately before). Current data reading means 22 reads data at the digit of the current address. Right-side by one-dot data reading means 23 reads data at the digit succeeding the current address by one dot. Right-side by two-dot data reading means 24 reads data at the digit succeeding the current address by two dots. Using logical product operation means 27 and 28, logical product operations are performed between each pair of the data from the reading means 21 to 24 with one of each pair being inverted by data inversion means 25 and 26.

Abstract: Disclosed are a semiconductor device possessing an insulating film which is a silicon oxide film containing nitrogen formed on a semiconductor substrate, with the hydrogen concentration ([H]) in this oxide film satisfying the condition of ##EQU1## where m.perspectiveto.2.0.+-.0.4, n.perspectiveto.2.5.+-.0.5 k.perspectiveto.2.0.+-.0.4 (at. %).sup.-2[H.sub.ox ]: hydrogen concentration in an ordinary thermally grown silicon oxide film[N]: concentration of nitrogen contained in the interface of oxide film and substrate; and a method for fabricating a semiconductor device comprising the steps of forming a nitrided oxide silicon film by nitrizing a thermally grown silicon oxide film formed on a semiconductor substrate in a nitrizing atmosphere by using a rapid heating furnace, reannealing it in an oxidizing or inert gas atmosphere by using a rapid heating furnace to form a reannealed nitrided oxide insulating film, and forming a gate electrode.

Abstract: A lightly doped source and a lightly doped drain are formed at a region which is adjacent to a heavily doped source and a heavily doped drain of FET and all or a part of which is under a gate electrode. In the lightly doped source and the lightly doped drain, an effective impurity atom concentration is gradually lowered from an inside of a substrate toward a surface thereof. Accordingly, a capacity between the gate and the drain is reduced and an operation speed of a circuit is enhanced. Hot carrier is generated at a deeper portion, which leads to an improvement for hot-carrier immunity. In a method of manufacturing it, only by changing conditions of implant and heat-treatment at manufacturing an FET with a conventional LATID structure the impurity atom concentration profile is improved. The effective impurity atom concentration at surfaces of lightly doped source and drain can be lowered by counter-doping.

Abstract: A character pattern generation apparatus for a serial printer, comprises an input buffer for storing a character code and attribute data; contour data storing means for storing contour data representing a contour of a pattern correspondingly to the character code, the contour data including starting point coordinate data, end point coordinate data, and line type data; means for reading the contour data from the contour data storing means according to the character code stored in the input buffer; operation means for calculating new starting point coordinate data and new end point coordinate data, according to the degree of magnification which is designated by the attribute data, the starting point coordinate data and the end point coordinate data, to output coordinates of a starting point and coordinates of an end point, the starting point and end point being in a current pass area; contour reproducing means for joining the coordinates of the starting point with the coordinates of the end point output from th

Abstract: By symmetrically forming source and drain regions to the gate electrodes, electrically symmetrical transistor characteristics are obtained. After forming the first source and drain regions by large-tilt-angle ion implantation, without a sidewall in the gate electrode or after forming a sidewall shorter than the distance in the lateral direction of the second source and drain regions from the end of the mask for ion implantation, the diffusion of the second source and drain regions in the lateral direction is restricted to the maximum extent by heat treatment for a short time, and then the end of the gate electrode and the end of the second source and drain regions are matched, or their overlap region is formed. As a result, the manufacturing method of the MOS transistor results in both high performance and high reliability.

Abstract: A semiconductor device is disclosed which comprises a semiconductor substrate and an insulating film disposed on the substrate. The insulating film is a oxynitride film prepared by nitriding a thermal oxide film, which has been formed on the substrate, in an atmosphere of nitriding gas. The nitriding is conducted for a nitridation time of 10.sup.6.6-T N.sup./225 seconds or shorter wherein T.sub.N is in the nitridation temperature in degree centigrade, or conducted so as to have a nitrogen concentration of about 8 atomic % or less, at least in the vicinity of the interface between the oxynitride film and the substrate. Also disclosed is a method for the production of the semiconductor device.

Abstract: A nonvolatile semiconductor memory comprising a silicon semiconductor substrate and formed thereon a gate insulating film, wherein an ion belonging to the same Group IV in the periodic table as the ion of said silicon semiconductor substrate belongs is shot into said gate insulating film by ion implantation in a dose of not less than 10.sup.16 cm.sup.-2 to form an ion-implanted region therein in such a way that a peak of impurity density of the ion is present at the gate insulating film side from the interface between said semiconductor substrate and said gate insulating film.Also disclosed are an MOS integrated circuit comprising the nonvolatile semiconductor memory, and a method of making the nonvolatile semiconductor memory.

Abstract: A process for producing an over-based sulfurized alkaline earth metal phenate type detergent, which comprises reacting a phenol and a dihydric alcohol with an alkaline earth metal reagent to carry out a metal addition reaction, and reacting sulfur therewith to carry out a sulfurization reaction, and then reacting carbon dioxide therewith to carry out a carbon dioxide treatment, characterized in that the metal addition reaction and the sulfurization reaction are carried out under pressure and closed conditions. The sulfurization reaction may be carried out simultaneously with the metal addition reaction, or, alternatively, with the carbon dioxide treatment after the metal addition reaction. Furthermore, the sulfurization reaction may be carried out between the metal addition reaction and the carbon dioxide treatment.

Abstract: An automotive headlamp which cuts off ultraviolet rays generated from a discharge bulb light source, even in the case where the front lens is broken. A reflector is provided having a bulb insertion hole formed in a rear portion thereof, and a socket portion supporting a discharge lamp bulb is attached to the reflector at the bulb insertion hole. A direct-ray shade for shielding direct rays of light is disposed in front of the lamp. An ultraviolet-shielding layer is formed on a front surface of the reflector.

Abstract: A process for producing a mixture of sulfides of alkaline earth metal salts of an alkylhydroxybenzoic acid and an alkylphenol comprising the steps of: reacting a mixture of a phenol, a dihydric alcohol and an alkaline earth metal oxide and/or hydroxide (hereinafter referred to as an alkaline earth metal reagent) in an amount of no more than 0.99 gram equivalents per gram equivalent of said phenol; distilling off water and the dihydric alcohol until the amount of the dihydric alcohol becomes no more than 0.6 moles per mole of the alkaline earth metal reagent; reacting the resulting distillation residue with carbon dioxide; and reacting the resulting product with elemental sulfur in an amount of 0.1-4.0 moles per mole of the alkaline earth metal reagent.

Abstract: A process for the production of a basic alkaline earth metal phenate is disclosed. The process comprises reacting a phenol, a dihydric alcohol, and an alkaline earth metal agent selected from alkaline earth metal oxides and hydroxides to achieve the addition of the alkaline earth metal to the phenol, wherein water is added to the reaction system in an amount of from 0.01 to 10 mols per mol of the alkaline earth metal agent. This basic alkaline earth metal phenate is useful as an additive for lubricating oils and fuel oils.

Abstract: A process for producing over-based sulfurized alkaline earth metal phenates useful as lubricating oil or fuel oil additives comprising reacting a phenol, sulfur, a dihydric alcohol and an alkaline earth metal oxide or hydroxide with about 0.99 to about 0.001 gram equivalents per phenolic hydroxyl group, and reacting the reaction product with carbon dioxide at a temperature of about 50.degree. to about 230.degree. C.