Abstract: A memory system includes a nonvolatile memory, a memory controller included in a first package, and a memory interface circuit included in a second package that is different from the first package. The memory controller includes an encoder for performing encoding for error correction. The memory controller is configured to encode first data into second data using the encoder, and program the second data into a location in the nonvolatile memory. The memory interface circuit is interposed between the memory and the memory controller. The memory interface circuit includes a decoder for performing decoding for error correction. The memory interface circuit is configured to read third data from a first location in the nonvolatile memory, diagnose the third data by decoding the third data using the decoder, and convey a result of the diagnosis to the memory controller.

Abstract: A support member-attached wire harness includes a wire harness including an electrical wire and a support member that includes a fitting portion formed in a partially cylindrical shape that is opened partially in a circumferential direction so as to be capable of being fitted to an outer peripheral portion of a bar-shaped member. On at least one of the wire harness and the support member, a support portion for supporting the wire harness disposed along an outer periphery of the fitting portion at a fixed position with respect to the fitting portion is formed.

Abstract: An object of the present invention is to reduce the constraints on the mounting of a wire protecting protector to a wire, while achieving a reduction in the weight of the wire protecting protector. A wire protecting protector is made of a foamed resin and is formed in a shape having a wire housing recess capable of housing a wire, and a surface of the wire protecting protector that includes an inner circumferential surface on the wire housing recess side is a surface formed through molding. Preferably, a reinforcing film is formed on at least a part of the surface of the wire protecting protector.

Abstract: Provided are a substrate for test use that is preferable for use in a test such as a culture test, and a method for manufacturing the substrate for test use. The substrate for test use, in which a solution retaining part for retaining water or an aqueous solution, is formed at a surface of a substrate of polydimethylsiloxane (PDMS). The solution retaining part is a concave part having a hydrophilic surface layer. The surface layer has a maximum thickness of 1 ?m or larger.

Abstract: A memory system includes a nonvolatile memory, a memory controller included in a first package, and a memory interface circuit included in a second package that is different from the first package. The memory controller includes an encoder for performing encoding for error correction. The memory controller is configured to encode first data into second data using the encoder, and program the second data into a location in the nonvolatile memory. The memory interface circuit is interposed between the memory and the memory controller. The memory interface circuit includes a decoder for performing decoding for error correction. The memory interface circuit is configured to read third data from a first location in the nonvolatile memory, diagnose the third data by decoding the third data using the decoder, and convey a result of the diagnosis to the memory controller.

Abstract: A memory system includes a nonvolatile memory, a memory controller included in a first package, and a memory interface circuit included in a second package that is different from the first package. The memory controller includes an encoder for performing encoding for error correction. The memory controller is configured to encode first data into second data using the encoder, and program the second data into a location in the nonvolatile memory. The memory interface circuit is interposed between the memory and the memory controller. The memory interface circuit includes a decoder for performing decoding for error correction. The memory interface circuit is configured to read third data from a first location in the nonvolatile memory, diagnose the third data by decoding the third data using the decoder, and convey a result of the diagnosis to the memory controller.

Abstract: A support member-attached wire harness includes a wire harness including an electrical wire and a support member that includes a fitting portion formed in a partially cylindrical shape that is opened partially in a circumferential direction so as to be capable of being fitted to an outer peripheral portion of a bar-shaped member. On at least one of the wire harness and the support member, a support portion for supporting the wire harness disposed along an outer periphery of the fitting portion at a fixed position with respect to the fitting portion is formed.

Abstract: An object of the present invention is to reduce the constraints on the mounting of a wire protecting protector to a wire, while achieving a reduction in the weight of the wire protecting protector. A wire protecting protector is made of a foamed resin and is formed in a shape having a wire housing recess capable of housing a wire, and a surface of the wire protecting protector that includes an inner circumferential surface on the wire housing recess side is a surface formed through molding. Preferably, a reinforcing film is formed on at least a part of the surface of the wire protecting protector.

Abstract: An adhesive sheet including a substrate and adhesive layers that are arranged on one surface of the substrate with a primer layer being interposed therebetween, wherein the adhesive layers include a natural rubber and a tackifier, the adhesive sheet has a volume resistivity of 1×1010? cm or more and a tensile modulus at 100% elongation of 50 MPa or less as determined in accordance with JIS K 6251, the adhesive layers have a probe tack of 10N/cm2 or less as determined in accordance with ASTM D 2979, the adhesive force between the adhesive layers having a width of 15 mm is 1.5 N or more, and the adhesive force between the substrate and the adhesive layers having a width of 15 mm is 1.5 N or less.

Abstract: Characteristics of a semiconductor device are improved. A method of manufacturing a semiconductor device of the invention includes a step of forming a gate insulating film over a nitride semiconductor layer. The step includes steps of forming a crystalline Al2O3 film on the nitride semiconductor layer, forming a SiO2 film on the Al2O3 film, and forming an amorphous Al2O3 film on the SiO2 film. The step further includes steps of performing heat treatment on the amorphous Al2O3 to crystallize the amorphous Al2O3, thereby forming a crystalline Al2O3 film, and forming a SiO2 film on the crystalline Al2O3 film. In this way, since a film stack, which is formed by alternately stacking the crystalline Al2O3 films and the SiO2 films from a bottom side, is used as the gate insulating film, threshold voltage can be cumulatively increased.

Abstract: Pin body has lightening hole having one-end-side and another-end-side large diameter parts formed on both end sides in the longitudinal direction; a central small diameter part; one-end-side and another-end-side first rounded parts each being provided between the large diameter part and the central small diameter part, having an inner diameter decreasing from each large diameter part side toward the central small part side, and having a rate of change of the inner diameter increasing from each large diameter part side toward the central small diameter part side; and one-end-side and another-end-side second rounded parts each being provided between each first rounded part and the central small diameter part, having an inner diameter decreasing from each first rounded part toward the central small diameter part side, and having a rate of change of the inner diameter decreasing from each first rounded part toward the central small diameter part side.

Abstract: Characteristics of a semiconductor device are improved. A method of manufacturing a semiconductor device of the invention includes a step of forming a gate insulating film over a nitride semiconductor layer. The step includes steps of forming a crystalline Al2O3 film on the nitride semiconductor layer, forming a SiO2 film on the Al2O3 film, and forming an amorphous Al2O3 film on the SiO2 film. The step further includes steps of performing heat treatment on the amorphous Al2O3 to crystallize the amorphous Al2O3, thereby forming a crystalline Al2O3 film, and forming a SiO2 film on the crystalline Al2O3 film. In this way, since a film stack, which is formed by alternately stacking the crystalline Al2O3 films and the SiO2 films from a bottom side, is used as the gate insulating film, threshold voltage can be cumulatively increased.

Abstract: A memory system includes a nonvolatile memory, a memory controller included in a first package, and a memory interface circuit included in a second package that is different from the first package. The memory controller includes an encoder for performing encoding for error correction. The memory controller is configured to encode first data into second data using the encoder, and program the second data into a location in the nonvolatile memory. The memory interface circuit is interposed between the memory and the memory controller. The memory interface circuit includes a decoder for performing decoding for error correction. The memory interface circuit is configured to read third data from a first location in the nonvolatile memory, diagnose the third data by decoding the third data using the decoder, and convey a result of the diagnosis to the memory controller.

Abstract: To enhance electromigration resistance of an electrode. A drain electrode is partially formed on a side surface of a drain pad. In this case, the drain electrode is integrated with the drain pad and extends from the side surface of the drain pad in a first direction (y direction). A recessed portion is located in a region overlapping with the drain electrode in a plan view. At least a part of the drain electrode is buried in the recessed portion. A side surface of the recessed portion, which faces the drain pad, enters the drain pad in the first direction (y direction).

Abstract: To enhance electromigration resistance of an electrode. A drain electrode is partially formed on a side surface of a drain pad. In this case, the drain electrode is integrated with the drain pad and extends from the side surface of the drain pad in a first direction (y direction). A recessed portion is located in a region overlapping with the drain electrode in a plan view. At least a part of the drain electrode is buried in the recessed portion. A side surface of the recessed portion, which faces the drain pad, enters the drain pad in the first direction (y direction).

Abstract: A piston of an internal combustion engine includes a crown portion; a pair of thrust-side and counter-thrust-side skirt portions; and a pair of apron portions connecting the thrust-side skirt portion with the counter-thrust-side skirt portion. Each of the pair of apron portions includes an upper end wall connected with the crown portion, and a pin boss portion supporting a piston pin. A reverse-surface-side portion of the crown portion is formed with a hollow portion extending along an outer surface of the upper end wall of the apron portion. The upper end wall of the apron portion includes a bending portion between an outside surface of the pin boss portion and a circumferential end of the skirt portion. The bending portion bends in a step-like manner from the outside surface of the pin boss portion toward the circumferential end of the skirt portion.

Abstract: To enhance electromigration resistance of an electrode. A drain electrode is partially formed on a side surface of a drain pad. In this case, the drain electrode is integrated with the drain pad and extends from the side surface of the drain pad in a first direction (y direction). A recessed portion is located in a region overlapping with the drain electrode in a plan view. At least a part of the drain electrode is buried in the recessed portion. A side surface of the recessed portion, which faces the drain pad, enters the drain pad in the first direction (y direction).

Abstract: To enhance electromigration resistance of an electrode. A drain electrode is partially formed on a side surface of a drain pad. In this case, the drain electrode is integrated with the drain pad and extends from the side surface of the drain pad in a first direction (y direction). A recessed portion is located in a region overlapping with the drain electrode in a plan view. At least a part of the drain electrode is buried in the recessed portion. A side surface of the recessed portion, which faces the drain pad, enters the drain pad in the first direction (y direction).

Abstract: According to embodiments, a memory system includes a plurality of memory chips configuring banks, an instruction generator, and a memory controller. The instruction generator generates a plurality of instructions. The memory controller is configured to execute memory accesses to the banks based on the instructions. Each memory access comprises a first command sequence and a second command sequence. The first command sequence causes in-bank processing shortly subsequent to the first command. The second command sequence is executed subsequent to the in-bank processing. The memory controller executes successively a second command sequence to a first bank based on a first instruction and a first command sequence to the first bank based on a second instruction subsequent to the first instruction, and then starts a memory access to a second bank based on a third instruction while the first bank is executing the in-bank processing caused by the first command sequence.

Abstract: To enhance electromigration resistance of an electrode. A drain electrode is partially formed on a side surface of a drain pad. In this case, the drain electrode is integrated with the drain pad and extends from the side surface of the drain pad in a first direction (y direction). A recessed portion is located in a region overlapping with the drain electrode in a plan view. At least a part of the drain electrode is buried in the recessed portion. A side surface of the recessed portion, which faces the drain pad, enters the drain pad in the first direction (y direction).