Abstract: A laser light source 1 is provided with a first reflection mirror 11, a laser medium 12, an aperture 13, an output mirror 14, a half mirror 15, a light beam diameter adjuster 16, and a second reflection mirror 17, and outputs laser oscillation light 31 reflected by the half mirror 15 to the outside. The main resonator is composed by the first reflection mirror 11 and the output mirror 14 disposed so as to be opposed to each other with the laser medium 12 placed therebetween. The external resonator is composed by the output mirror 14 and the second reflection mirror 17 disposed so as to be opposed to each other. The second reflection mirror 17 is configured such that it gives amplitude or phase variations to respective positions in the section of a light beam when the light is reflected, the second reflection mirror presents an amplitude or phase variation distribution, and determines the transverse mode of the laser oscillation light 31 based on the amplitude or phase variation distribution.

Abstract: A filter device includes an inclining panel and a movable filter structure. The inclining panel is arranged between a first electronic device housing device and a second electronic device housing device for housing electronic device, and separates the space to the side of the first electronic device housing device and the space to the side of the second electronic device housing device. The movable filter structure circles around to surround the circumference of the inclining panel.

Abstract: Laser lights L1 to L3 are relatively moved along a line to cut 5, while repeating a converging step of simultaneously converging the laser lights L1 to L3 at converging positions P1 to P3 separated from each other along the line 5. This forms a plurality of modified spots S along the line 5 and causes the plurality of modified spots S to form a modified region 7. The converging positions P1 to P3 in the repeated converging steps are kept from being superposed on each other, while at least one of converging positions P21 to P23 in the converging step in a later stage is located between converging positions P11 to P13 in the converging step in an earlier stage.

Abstract: In a near-field scanning microscope using an aperture probe, the upper limit of the aperture formation is at most several ten nm in practice. In a near-field scanning microscope using a scatter probe, the resolution ability is limited to at most several ten nm because of the external illuminating light serving as background noise. Moreover, measurement reproducibility is seriously lowered by a damage or abrasion of a probe. Optical data and unevenness data of the surface of a sample can be measured at a nm-order resolution ability and a high reproducibility while damaging neither the probe nor the sample by fabricating a plasmon-enhanced near-field probe having a nm-order optical resolution ability by combining a nm-order cylindrical structure with nm-order microparticles and repeatedly moving the probe toward the sample and away therefrom at a low contact force at individual measurement points on the sample.

Abstract: Provided is a semiconductor device capable of suppressing an occurrence of a punch-through phenomenon. A semiconductor device includes a substrate 1, a first n-type semiconductor layer 2, a p-type semiconductor layer 3, a second n-type semiconductor layer 4, a drain electrode 13, a source electrode 11, a gate electrode 12, and a gate insulation film 21, wherein the first n-type semiconductor layer 2, the p-type semiconductor layer 3, and the second n-type semiconductor layer 4 are laminated on the substrate 1 in this order. The drain electrode 13 is in ohmic-contact with the first n-type semiconductor layer 2. The source electrode 11 is in ohmic-contact with the second n-type semiconductor layer 4. An opening portion to be filled or a notched portion that extends from an upper surface of the second n-type semiconductor layer 4 to an upper part of the first n-type semiconductor layer 2 is formed at a part of the p-type semiconductor layer 3 and a part of the second n-type semiconductor layer 4.

Abstract: The invention provides an information recording medium including highly reliable power calibration areas, as well as an information recording and reproducing device utilizing it. The medium is an information recording medium having a recording layer including a data recordable area 50 for recording user information signals, a lead-in area provided on the inner periphery of the data recordable area 50, an inner power calibration area provided further on the inside of the lead-in area for recording test recording patterns, and a recording management area for recording management information related to the inner power calibration area. An outer power calibration area 70 is provided on the outer periphery of the final point of recording of the user information signal on the recording layer.

Abstract: An elastic-wave filter device includes a first piezoelectric substrate, a second piezoelectric substrate, a first pillar-like wiring electrode, and a second pillar-like wiring electrode. The first and second substrates have a first and a second IDT electrodes on their top faces respectively. A lateral face of the second substrate confronts a lateral face of the first substrate. The first pillar-like electrode and the second pillar-like electrode are formed above the first and the second substrates respectively, and are electrically connected to the first and the second IDT electrodes respectively. The first substrate is thicker than the second substrate. A distance between a plane including the top face of the first substrate and a plane including the top face of the second substrate is smaller than a distance between a plane including an underside of the first substrate and a plane including an underside of the second substrate.

Abstract: The present invention provides a 90-degree hybrid capable of miniaturization and also capable of a stable operation in a wide band. According to an embodiment of the present invention, a PLC-type 90-degree hybrid comprises: a PLC chip having a planar lightwave circuit formed therein; and a 90-degree hybrid circuit formed in the planar lightwave circuit, mixing a modulated signal light and an LO light to separate the signal light into quadrature components I and Q, and outputting the same. The 90-degree hybrid circuit includes: two Y-branch couplers each branching the signal light and the LO light; and two wavelength-independent directional couplers which cause LO lights passing through two paths and signal lights passing through two paths to interfere with each other, respectively. The above-described paths include waveguides having mutually inverted shapes and waveguides having an identical shape, and have a shape substantially symmetrical with respect to the signal light.

Abstract: Disclosed is an HJFET 110 which comprises: a channel layer 12 composed of InyGa1-yN (0?y?1); a carrier supply layer 13 composed of AlxGa1-xN (0?x?1), the carrier supply layer 13 being provided over the channel layer 12 and including at least one p-type layer; and a source electrode 15S, a drain electrode 15D and a gate electrode 17 which are disposed facing the channel layer 12 through the p-type layer, and provided over the carrier supply layer 13. The following relational expression is satisfied: 5.6×1011x<NA×?×t [cm?2]<5.6×1013x, where x denotes an Al compositional ratio of said carrier supply layer, t denotes a thickness of said p-type layer, NA denotes an impurity concentration, and ? denotes an activation ratio.

Abstract: To provide a CAM system and method which can facilitate change of a machining posture and a machining procedure, and can aid an operation of forming an optimum machining path. Machining features capable of being integrated into one are obtained and a machining procedure for the integrated machining feature is obtained. Based on the machining procedure, design data is converted to manufacturing data. The manufacturing data capable of machining the integrated machining feature together can be therefore obtained in contrast with the case of separately machining the individual machining features which constitute the integrated machining feature.

Abstract: The invention provides a PLC-type DP-QPSK demodulator that reduces connection loss between a polarization beam splitter and a 90-degree hybrid circuit and aims at reducing the manufacturing cost and an optical transmission system using the same. In an embodiment of the invention, a PLC-type DP-QPSK demodulator that receives a DP-QPSK signal includes one PLC chip having a planar lightwave circuit. Input ports and output ports of signal light are provided at an input end and at an output end of the PLC chip, respectively. Within the planar lightwave circuit, there are integrated a polarization beam splitter that splits the DP-QPSK signal into an X-polarization QPSK signal and a Y-polarization QPSK signal, and two 90-degree hybrid circuits that mix the X-polarization QPSK signal and local oscillation light and the Y-polarization QPSK signal and local oscillation light, respectively, split each QPSK signal into orthogonal components I, Q and output them.

Abstract: A radio frame control apparatus for controlling a radio frame of an orthogonal frequency division multiple access system, having a placement information generation section generating first placement information including a radio resource amount assigned to each terminal station based on a received radio resource request, a pseudo placement information generation section generating pseudo placement information including a temporal radio resource amount assigned to pseudo communication, a radio resource assignment section generating second placement information by inserting the pseudo placement information into the first placement information.

Abstract: A radio wave propagation characteristic estimation apparatus includes at least a ray launching method calculation unit, an imaging method calculation unit, and a synthesis unit. The ray launching method calculation unit calculates a first piece of radio wave propagation characteristic estimation data in which a radio wave propagation characteristic from a radio wave transmission point to a building with a radio wave reception point is estimated, using a plan view data. The imaging method calculation unit calculates a second piece of radio wave propagation characteristic estimation data in which a radio wave propagation characteristic from the radio wave transmission point to the building with the radio wave reception point is estimated, using the vertical cross-sectional view data. The synthesis unit calculates pieces of indoor penetration data to the radio wave reception point within the building respectively for the first piece and the second piece, and synthesizes the pieces of indoor penetration data.

Abstract: It is required to qualitatively design a circuitry device in which not only in a small-signal simulation but also in a large-signal simulation, loop oscillation and motorboating oscillation of an amplifier are precisely predicted to suppress oscillation without severing a loop or without inserting a circulator. To remove insertion loss due to a probe resistor Rx, a negative resistor ?Rx/2 is arranged at both ends thereof. To prevent consumption of a DC bias in the probe, a DC block is applied. Further, to remove thermal noise caused by an actual resistor to reduce influence on a noise factor NF, the noise temperature (environmental temperature) of the actual resistor is set to zero Kelvin.

Abstract: Provided is a semiconductor device in which the trade-off between the withstand voltage and the on-resistance is improved and the performance is increased. A semiconductor device comprises a substrate 1, a first n-type semiconductor layer 21?, a second n-type semiconductor layer 23, a p-type semiconductor layer 24, and a third n-type semiconductor layer 25?, wherein the first n-type semiconductor layer 21?, the second n-type semiconductor layer 23, the p-type semiconductor layer 24, and the third n-type semiconductor layer 25? are laminated at the upper side of the substrate 1 in this order. The drain electrode 13 is in ohmic-contact with the first n-type semiconductor layer 21? and the source electrode 12 is in ohmic-contact with the third n-type semiconductor layer 25?.

Abstract: Optical information and topographic information of the surface of a sample are measured at a nanometer-order resolution and with high reproducibility without damaging a probe and the sample by combining a nanometer-order cylindrical structure with a nanometer-order microstructure to form a plasmon intensifying near-field probe having a nanometer-order optical resolution and by repeating approach/retreat of the probe to/from each measurement point on the sample at a low contact force.

Abstract: Container for accommodating small article(s) comprises: a container body including flange portion wherein connecting slits are formed; and a container lid element including lateral wall region having projected connecting pieces. A trim cover assembly of the seat includes: a peripheral end area or margin defined in a container mounting hole formed in the trim cover assembly; and connecting slits formed in that margin. In assembly, the connecting pieces are inserted through those flanged portion, while simultaneously the margin of trim cover assembly is sandwiched between the flanged portion and lateral wall region. Those free ends are flattened to connecting slits, respectively, so that free ends of the connecting pieces project from the connect together all the container body, container lid element and trim cover assembly. Finally, the trim cover assembly is attached upon a foam padding, with the container body inserted in a recession of the foam padding.

Abstract: An object is irradiated with a laser light modulated by a reflection type spatial light modulator such that aberration of the laser light converged inside the object becomes a predetermined aberration or less. Therefore, aberration of the laser light generated at a position on which a converging point of the laser light is located is made as small as possible, to enhance the energy density of the laser light at that position, which makes it possible to form a modified region with a high function as a starting point for cutting. In addition, because the reflection type spatial light modulator is used, it is possible to improve the utilization efficiency of the laser light as compared with a transmissive type spatial light modulator.

Abstract: In an ink jet printing apparatus for scanning a print medium with a printing head and printing an image thereon, the printing head includes a plurality of ink ejection port arrays. The ink ejection ports in each of the arrays are arranged in a direction crossing a scanning direction of the printing head relative to the print medium. An allowable recording rate given to at least one of the ejection port arrays behind an ejection port array located at the front in the scanning direction is set lower than that given to the one located at the front. As a result, a printing apparatus capable of suppressing a throughput speed thereof and adhesion of ink mists to a formation face of the ejection ports can be provided.

Abstract: An optical 90-degree hybrid includes a 90-degree hybrid circuit which mixes signal light and local oscillation light (LO light), separates the signal light into orthogonal components I, Q to output. The 90-degree hybrid circuit includes a first and a second coupler that branch signal light and LO light, a first and a second path through which signal light propagates, a third and a fourth path through which LO light propagates, and a third and a fourth coupler that combine signal light and LO light. A phase difference of 90 degrees is given between the beams of LO light propagating through the third and fourth paths. The second coupler, the third path, and the fourth path are formed between the first path and the second path. The overall size of the 90-degree hybrid circuit is reduced and downsizing of the PLC chip is enabled.