Abstract: A semiconductor laser element includes a light emission layer and a plurality of waveguides to arranged in one direction. A semiconductor laser device includes the semiconductor laser element and a first base disposed, via a first adhesion layer, on one face in the lamination direction of the semiconductor laser element. The thermal resistance of the first adhesion layer is, in the arrangement direction of the plurality of waveguides to lower on one end portion side than on the other end portion side.

Abstract: A nitride light emitter includes: a nitride semiconductor light-emitting element including an AlxGa1-xN substrate (0?x?1) and a multilayer structure above the AlxGa1-xN substrate; and a submount substrate on which the nitride semiconductor light-emitting element is mounted. The multilayer structure includes a first clad layer of a first conductivity type, a first light guide layer, a quantum-well active layer, a second light guide layer, and a second clad layer of a second conductivity type which are stacked sequentially from the AlxGa1-xN substrate. The multilayer structure and submount substrate are opposed to each other. The submount substrate comprises diamond. The nitride semiconductor light-emitting element has a concave warp on a surface closer to the AlxGa1-xN substrate.

Abstract: A charging circuit includes a first power source circuit that supplies charging power to secondary batteries; a switch that controls the supply of the power; and a control device that performs switching control of the switch. The control device detects a voltage difference between the secondary batteries before starting charging; starts a timer and starts serial charging of the secondary batteries; on the condition that the voltage difference before the charging has been equal to or larger than a first threshold, if respective voltage values of the secondary batteries have both become equal to or larger than a second threshold before the timer expires, shortens a remaining time on the timer at that time point; and finishes the serial charging of the secondary batteries at the earlier of a time point when the secondary batteries have both become fully charged, or a time point when the timer has expired.

Abstract: A nitride-based light-emitting device includes, on a GaN substrate: a first-conductivity-side first semiconductor layer; an active layer; and a second-conductivity-side first semiconductor layer, in the stated order, and further includes an electron barrier layer of a second conductivity type between the active layer and the second-conductivity-side first semiconductor layer, the electron barrier layer including a nitride-based semiconductor containing at least Al. The electron barrier layer has a first region in which an Al composition changes. The Al composition in the first region monotonically increases in a direction from the active layer to the second-conductivity-side first semiconductor layer. An impurity concentration in the second-conductivity-side first semiconductor layer is lower in a region nearer the electron barrier layer than in a region farther from the electron barrier layer.

Abstract: A nitride light emitter includes: a nitride semiconductor light-emitting element including an AlxGa1-xN substrate (0?x?1) and a multilayer structure above the AlxGa1-xN substrate; and a submount substrate on which the nitride semiconductor light-emitting element is mounted. The multilayer structure includes a first clad layer of a first conductivity type, a first light guide layer, a quantum-well active layer, a second light guide layer, and a second clad layer of a second conductivity type which are stacked sequentially from the AlxGa1-xN substrate. The multilayer structure and submount substrate are opposed to each other. The submount substrate comprises diamond. The nitride semiconductor light-emitting element has a concave warp on a surface closer to the AlxGa1-xN substrate.

Abstract: A nitride-based light-emitting device includes, on a GaN substrate: a first-conductivity-side first semiconductor layer; an active layer; and a second-conductivity-side first semiconductor layer, in the stated order, and further includes an electron barrier layer of a second conductivity type between the active layer and the second-conductivity-side first semiconductor layer, the electron barrier layer including a nitride-based semiconductor containing at least Al. The electron barrier layer has a first region in which an Al composition changes. The Al composition in the first region monotonically increases in a direction from the active layer to the second-conductivity-side first semiconductor layer. An impurity concentration in the second-conductivity-side first semiconductor layer is lower in a region nearer the electron barrier layer than in a region farther from the electron barrier layer.

Abstract: A charging circuit includes a first power source circuit that supplies charging power to secondary batteries; a switch that controls the supply of the power; and a control device that performs switching control of the switch. The control device detects a voltage difference between the secondary batteries before starting charging; starts a timer and starts serial charging of the secondary batteries; on the condition that the voltage difference before the charging has been equal to or larger than a first threshold, if respective voltage values of the secondary batteries have both become equal to or larger than a second threshold before the timer expires, shortens a remaining time on the timer at that time point; and finishes the serial charging of the secondary batteries at the earlier of a time point when the secondary batteries have both become fully charged, or a time point when the timer has expired.

Abstract: A light emitting diode includes a GaN substrate having a C-plane as a lamination surface; an n-type GaN layer which is laminated on the GaN substrate and which includes a first n-type GaN layer, an n-type intermediate layer, and a second n-type GaN layer; and an AlGaN strain adjustment layer laminated on the n-type GaN layer. Furthermore, the light emitting diode includes a light-emitting layer which is laminated on the AlGaN strain adjustment layer and which has a multi-quantum well structure having well layers and barrier layers, which are made of InGaN having a lattice constant in an a-axis direction larger than that of the AlGaN strain adjustment layer; and a p-type AlGaN cladding layer laminated on the light emitting layer.

Abstract: A nitrocarburized crankshaft member made of a steel having essentially ferrite and perlite, and at least a portion of a steel surface thereof having a ferrite surface area of 50% or greater that is imparted with a nitrocarburized hard layer. The steel consists of C, Si, Mn, Cu, Ni, and Cr as required elements and Mo, N, s-Al, Ti, Pb, Bi, and Ca as optional elements that may be included, and Fe and inevitable impurities. C is within a range of 0.25 to 0.32%. The nitrocarburized crankshaft member includes a thickness of a surface compound layer of the nitrocarburized hard layer of 10 to 35 ?m that is formed during establishment of a diffusion depth of a nitrogen diffusion zone below the surface compound layer of 700 ?m or greater.

Abstract: A nitrocarburized crankshaft member made of a steel that includes C in an amount by weight of 0.25 to 0.32% as a required element and an optional element that may be included, and Fe and inevitable impurities in a remaining portion. The steel-made crankshaft member mainly includes ferrite and perlite, wherein at least a portion of the steel surface thereof having a ferrite surface area of 50% or greater is imparted with a nitrocarburized hard layer. The nitrocarburized hard layer includes a surface compound layer suppressed to a thickness of 10 to 35 ?m, and a nitrogen diffusion zone below the surface compound layer having a diffusion depth of 700 ?m or greater. The steel includes C, Si, Mn, Cu, Ni, and Cr as the required elements and Mo, N, s-Al, and Ti as the optional elements.

Abstract: The invention relates to a crankshaft member having high fatigue strength and good bending correctability, and its method of manufacture. The steel made crankshaft member mainly consists of a two-phase structure of ferrite and perlite. The steel includes C, Ni, Mn, and Cr as required elements and Si, Cu, Mo, Ti, V, Nb, Ca, and S as optional elements that may be included, in the amounts of C within the range of 0.20 to 0.50 wt %, Si within the range of 0 to 0.6 wt %, Mn within the range of 0.5 to 1.5 wt %, Cu within the range of 0 to 0.7 wt %, Ni within the range of 0.05 to 1.5 wt %, Cr within the range of 0.05 to 0.45 wt %, and Mo within the range of 0 to 0.5 wt % to satisfy the condition 115?70C+8Si+23Mn+11Cu+128Cr+83Mo?50. A portion of the member surface is provided at least with a hard nitride layer having an average hardness within the range of 300 to 450 HV. Lamellar spacing of the perlite is 0.3 ?m or less.

Abstract: A nitride-based semiconductor light-emitting device capable of suppressing reduction of characteristics and a yield and method of fabricating the same is described. The method of fabricating includes the steps of forming a groove portion on a nitride-based semiconductor substrate by selectively removing a prescribed region of a second region of the nitride-based semiconductor substrate other than a first region corresponding to a light-emitting portion of a nitride-based semiconductor layer up to a prescribed depth and forming the nitride-based semiconductor layer having a different composition from the nitride-based semiconductor substrate on the first region and the groove portion of the nitride-based semiconductor substrate.

Abstract: A semiconductor device includes a semiconductor substrate formed of at least two kinds of group III elements and nitrogen, an active layer formed on the semiconductor substrate, and a nitride semiconductor layer formed on a surface of the semiconductor substrate and formed between the semiconductor substrate and the active layer. The nitride semiconductor layer is formed of the same constituent elements of the semiconductor substrate. A composition ratio of the lightest element among the group III elements of the nitride semiconductor layer is higher than a composition ratio of the corresponding element of the semiconductor substrate.

Abstract: A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.

Abstract: The object of the present invention is to provide a method for shot peening by which a compressive residual stress that is higher than any achieved by the conventional method can be achieved while the thickness of the processed material that is scraped is suppressed. The method is characterized in that the shot materials are shot against the processed material that has the hardness of 750 HV or more that is calculated from equations (1) to (3) below. The shot materials have Vickers hardness that is higher than the hardness of the processed material by 50 HV to 250 HV. The thickness of the processed material that is to be scraped is suppressed to 5 ?m or less. HV(m)={f(C)?f(T,t)}(1??R/100)+400×?R/100??Equation (1) f(C)=?660C2+1373C+278??Equation (2) f(T,t)=0.

Abstract: An object of the present invention is to provide a method of manufacturing a foam molded article in which upstanding portions are formed on a peripheral edge of a main body portion inexpensively by greatly increasing a yield of a mold. To achieve this object, in a manufacturing method for a foam molded article, a plate surface of the main body portion on a side where the upstanding portions is molded by side surfaces 21b, 31b of a continuous projecting portion defined when a male mold 20 and a female mold 30 are clamped such that projecting portions 21, 31 formed respectively on the male mold 20 and the female mold 30 are inserted into each other alternately, and inner surfaces of the upstanding portions are molded by tip end surfaces 21a, 31a of the projecting portions inserted into each other alternately when the male mold and the female mold are clamped.

Abstract: This nitride-based semiconductor laser device includes an active layer made of a nitride-based semiconductor and a p-type cladding layer, made of a nitride-based semiconductor, formed on the active layer. The refractive index in a region of the p-type cladding layer closer to the active layer is lower than the refractive index in another region of the p-type cladding layer opposite to the active layer.

Abstract: A GaN layer is grown on a sapphire substrate, an SiO2 film is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiO2 film using epitaxial lateral overgrowth. The GaN based semiconductor layer is removed by etching except in a region on the SiO2 film, and a p electrode is then formed on the top surface of the GaN based semiconductor layer on the SiO2 film, to join the p electrode on the GaN based semiconductor layer to an ohmic electrode on a GaAs substrate. An n electrode is formed on the top surface of the GaN based semiconductor layer.

Abstract: A carburized component with a base metal containing 0.10% to 0.40% C, 0.05% to 0.8% Si, 0.35% to 1.2% Mn, 2.0% to 5.0% Cr, remnant including Fe and inevitable impurities, a carburized layer formed on a surface layer portion, a grain boundary oxidized layer depth of 1 ?m or less on a surface thereof and an average C concentration of 1.5% to 4.0% at 25 ?m deep from the surface, and adjusted so as to satisfy 1.76 SC?1.06<WCr<1.76 SC+0.94, wherein said carburized layer also has a carbide area ratio of 15% to 60% at 25 ?m deep from the surface, a fine carbide area ratio, a dimension of 0.5 ?m to 10 ?m, and constitutes 80% or more of the total and 70% by volume or more of said fine carbide is M3C type.

Abstract: A nitrocarburized crankshaft member made of a steel that includes C in an amount by weight of 0.25 to 0.32% as a required element and an optional element that may be included, and Fe and inevitable impurities in a remaining portion. The steel-made crankshaft member mainly includes ferrite and perlite, wherein at least a portion of the steel surface thereof having a ferrite surface area of 50% or greater is imparted with a nitrocarburized hard layer. The nitrocarburized hard layer includes a surface compound layer suppressed to a thickness of 10 to 35 ?m, and a nitrogen diffusion zone below the surface compound layer having a diffusion depth of 700 ?m or greater. The steel includes C, Si, Mn, Cu, Ni, and Cr as the required elements and Mo, N, s-Al, and Ti as the optional elements.