Abstract: A GaN layer is grown on a sapphire substrate, an SiO2 film is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiO2 film using epitaxial lateral overgrowth. The GaN based semiconductor layer is removed by etching except in a region on the SiO2 film, and a p electrode is then formed on the top surface of the GaN based semiconductor layer on the SiO2 film, to join the p electrode on the GaN based semiconductor layer to an ohmic electrode on a GaAs substrate. An n electrode is formed on the top surface of the GaN based semiconductor layer.

Abstract: The present invention is to provide a free-cutting steel capable of suppressing production of coarse inclusions, and having a high fatigue strength and a desirable machinability. The free-cutting steel aimed at solving the foregoing problems consists essentially of, in % by mass, C: 0.1-0.5%, Si: 0.05-2.5%, Mn: 0.1-3.5%, S: 0.0005-0.004%, Al: 0.01-0.06%, Ti: 0.003-0.01%, O: up to 0.0015%, N: 0.003-0.01%, Bi: 0.015-0.025%, and the balance of Fe and inevitable impurities, wherein the formula (1) below is satisfied: ?4.8?log(([N]?0.0015)×[Ti]0.98)??4.3.

Abstract: A design support apparatus that can easily verify the conveyance design for a flexible medium based on input design information. A transit time is calculated when a flexible medium passes a characteristic point on a conveying path based a conveying conditions that are set.

Abstract: The carburized component of the present inventions is characterized by having a base metal containing: C: 0.10% to 0.40%; Si: 0.05% to 0.8%; Mn: 0.35% to 1.2%; Cr: 2.0% to 6.0%; and remnant including Fe and inevitable impurities, having a carburized layer formed on a surface layer portion of said base metal, having a grain boundary oxidized layer depth of 1 ?m or less on a surface thereof and an average C concentration SC of 1.5% to 4.0% at 25 ?m deep from the surface, and adjusted so as to satisfy: 1.76SC?1.06<WCr<1.76SC+0.94, wherein said carburized layer also has a carbide area ratio of 15% to 60% at 25 ?m deep from the surface, an fine carbide area ratio, having a dimension of 0.5 ?m to 1 ?m, constitutes 80% or more of the total, and further 70% by volume or more of said fine carbide is M3C type.

Abstract: The invention provides an aided design apparatus including a output element for outputting data of an attribute name associated with an attribute group of a part used for transporting a sheet along with three-dimensional shape data of the part. The invention further provides a related aided design method and a recording medium for recording a program for carrying out the method, wherein the data of parts used in a simulation for paper transportation can be easily exchanged.

Abstract: A method of fabricating a nitride-based semiconductor light-emitting device capable of suppressing reduction of characteristics and a yield is obtained. This method of fabricating a nitride-based semiconductor light-emitting device comprises steps of forming a groove portion on a nitride-based semiconductor substrate by selectively removing a prescribed region of a second region of the nitride-based semiconductor substrate other than a first region corresponding to a light-emitting portion of a nitride-based semiconductor layer up to a prescribed depth and forming the nitride-based semiconductor layer having a different composition from the nitride-based semiconductor substrate on the first region and the groove portion of the nitride-based semiconductor substrate.

Abstract: A semiconductor laser device comprising: an active layer, a semiconductor layer formed on the active layer and having a wurtzite structure, wherein a principal surface of the active layer is substantially perpendicular to a (0001) surface of the semiconductor layer, a current path portion in the semiconductor layer extends along a crystal orientation substantially parallel to the (0001) surface of the semiconductor layer, and an inner angle of the principal surface to a first side surface is different from an inner angle of the principal surface to a second side surface, the first side surface is a side surface of the current path portion and the second side surface is opposite to the first side surface.

Abstract: A semiconductor device includes a semiconductor substrate formed of at least two kinds of group III elements and nitrogen, an active layer formed on the semiconductor substrate, and a nitride semiconductor layer formed on a surface of the semiconductor substrate and formed between the semiconductor substrate and the active layer. The nitride semiconductor layer is formed of the same constituent elements of the semiconductor substrate. A composition ratio of the lightest element among the group III elements of the nitride semiconductor layer is higher than a composition ratio of the corresponding element of the semiconductor substrate.

Abstract: A nitride semiconductor device includes a nitride semiconductor layer having a main surface, and an ohmic electrode formed on the main surface of the nitride semiconductor layer The ohmic electrode includes a silicon layer formed to contact with the main surface of the nitride semiconductor layer, and a first metal layer formed on the silicon layer.

Abstract: A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.

Abstract: A nitride-based semiconductor laser device capable of attaining stabilization of a laser beam and inhibiting a threshold current and an operating current from increase is provided. This nitride-based semiconductor laser device comprises a substrate consisting of either a nitride-based semiconductor doped with an impurity or a boride-based material, an n-type cladding layer formed on the substrate, an active layer consisting of a nitride-based semiconductor formed on the n-type cladding layer, a p-type cladding layer formed on the active layer and a light guide layer formed only between the active layer and the p-type cladding layer in the interspaces between the active layer and the n- and p-type cladding layers.

Abstract: This invention aims to provide a carburized component realizing a larger strength for power transmission components such as gears, and a method of manufacturing the same. The carburized component of this invention, aimed at realizing the object, consists essentially of, in % by mass and both ends inclusive, C: 0.1-0.30%, Si: 0.80-1.50%, Mn: 0.30-1.20%, Cr: 2.0-5.5%, and the balance of Fe and inevitable impurities; has a mean C concentration over the range from the surface of the steel to a depth of 0.2 mm after vacuum carburization of 1.2% or more and 3.0% or less, and has a ratio of a carbide area over the range from the surface to a depth of 50 ?m of 15% or more and 60% or less, has the carbide precipitated in a finely dispersed manner so that the carbide having a grain size of 10 ?m or less accounts for 90% or more of the entire portion, and has a depth of a grain boundary oxide layer below the surface of 1 ?m or less.

Abstract: A nitride semiconductor laser element capable of controlling the lateral confinement of light with a good reproducibility, the nitride semiconductor element comprising an n-type cladding layer (3), an MQW light emitting layer (4) formed on the cladding layer (3), a p-type cladding layer (5) and a p-type contact layer (6) formed on the light emitting layer (4), and an ion implantation light absorbing layer (7) formed, by introducing carbon, in regions other than a current passing region (8) in the cladding layer (5) and the contact layer (6).

Abstract: Disclosed is a free cutting steel for machine structural use having excellent chip-breakability. The steel consists essentially of, by wt. %. C: 0.05-0.8%, Si: 0.01-2.5%, Mn: 0.1-3.5%, S: 0.01-0.2%, Ca or Ca+Mg; 0.0005-0.02%, Ti: 0.002-0.010% and/or Zr: 0.002-0.025%, O: 0.0005-0.010%, and the balance of impurities and Fe. At least five MnS inclusion particles having averaged particles sizes of 1.0 ?m or more exists per mm2 per 0.01% of S-content in the steel. The steel satisfies the condition that, in the microscopic fields, (area[?m2]/aspect ratio)?10, and that the the area percentage of Ca-containing sulfide inclusions containing at least 1.0 wt. % of Ca is in the range of 15-40% of the area of all the sulfide inclusions.

Abstract: A nitride-based semiconductor laser device capable of elongating the life thereof is obtained. This nitride-based semiconductor laser device comprises a first cladding layer consisting of a first conductivity type nitride-based semiconductor, an emission layer, formed on the first cladding layer, consisting of a nitride-based semiconductor and a second cladding layer, formed on the emission layer, consisting of a second conductivity type nitride-based semiconductor, while the emission layer includes an active layer emitting light, a light guiding layer for confining light and a carrier blocking layer, arranged between the active layer and the light guiding layer, having a larger band gap than the light guiding layer.

Abstract: A nitride-based semiconductor laser device capable of elongating the life thereof is obtained. This nitride-based semiconductor laser device comprises a first cladding layer consisting of a first conductivity type nitride-based semiconductor, an emission layer, formed on the first cladding layer, consisting of a nitride-based semiconductor and a second cladding layer, formed on the emission layer, consisting of a second conductivity type nitride-based semiconductor, while the emission layer includes an active layer emitting light, a light guiding layer for confining light and a carrier blocking layer, arranged between the active layer and the light guiding layer, having a larger band gap than the light guiding layer.

Abstract: Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surface to a back surface of the substrate, the manufacturing method being for stacking each of a plurality of nitride semiconductor layers on the front surface of the substrate in a constant film thickness. Grooves are formed on the nitride semiconductor substrate in the immediate areas of dislocation concentrated regions. Each of the nitride semiconductor layers is formed as a crystal growth layer on the main surface of the nitride semiconductor substrate to which the grooves have been formed.

Abstract: A GaN layer is grown on a sapphire substrate, an SiO2 film is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiO2 film using epitaxial lateral overgrowth. The GaN based semiconductor layer is removed by etching except in a region on the SiO2 film, and a p electrode is then formed on the top surface of the GaN based semiconductor layer on the SiO2 film, to join the p electrode on the GaN based semiconductor layer to an ohmic electrode on a GaAs substrate. An n electrode is formed on the top surface of the GaN based semiconductor layer.

Abstract: A semiconductor laser device is constructed by stacking a buffer layer, an undoped GaN layer, an n-GaN contact layer, an n-InGaN crack preventing layer, an n-AlGaN cladding layer, a light emitting layer, a p-AlGaN cladding layer, and a p-GaN contact layer in this order. A ridge portion comprising the p-GaN contact layer and the p-AlGaN cladding layer is formed, and the thickness of the p-AlGaN cladding layer in the ridge portion is less than 0.3 ?m.

Abstract: The present invention is to provide a free-cutting steel capable of suppressing production of coarse inclusions, and having a high fatigue strength and a desirable machinability. The free-cutting steel aimed at solving the foregoing problems consists essentially of, in % by mass, C: 0.1-0.5%, Si: 0.05-2.5%, Mn: 0.1-3.5%, S: 0.0005-0.004%, Al: 0.01-0.06%, Ti: 0.003-0.01%, O: up to 0.0015%, N: 0.003-0.01%, Bi: 0.015-0.025%, and the balance of Fe and inevitable impurities, wherein the formula (1) below is satisfied: ?4.8?log(([N]?0.0015)×[Ti]0.98)??4.3??formula (1).