Abstract: A process for producing an adhesive film includes laminating an adhesive layer containing thermoplastic polyimide onto at least one surface of a highly heat-resistant polyimide layer by coextrusion casting method, wherein a chemical dehydrator and a catalyst are contained in a precursor solution of the highly heat-resistant polyimide and/or a solution containing either the thermoplastic polyimide or a precursor of the thermoplastic polyimide.

Abstract: Disclosed is a polyimide film which exhibits high adherability to a metal foil via an adhesive layer containing a thermoplastic polyimide without requiring a special surface treatment. Specifically disclosed is a non-thermoplastic polyimide film obtained by imidizing a polyamic acid solution which is obtained from aromatic diamine and aromatic acid dianhydride. This non-thermoplastic polyimide film is characterized in that the aromatic diamine contains 4,4?-diaminodiphenylether and bis{4-(4-aminophenoxy)phenyl}propane, and the solution containing a polyamic acid is obtained by a specific production method.

Abstract: An optical waveguide element includes: an optical waveguide including an organic non-linear optical material; a first electrode arranged on one surface side of the optical waveguide; a second electrode arranged on another surface side of the optical waveguide; a protective member disposed on the second electrode, the protective member including (i) a third electrode which is provided on a first surface of the protective member, the first surface facing the second electrode, the third electrode being electrically connected to the second electrode, (ii) a fourth electrode which is provided on a second surface of the protective member, the second surface opposing the first surface, and (iii) a conductive portion which penetrates through the protective member from the first surface to the second surface, and electrically connects the third electrode and the fourth electrode.

Abstract: A nonvolatile semiconductor memory device includes a latch circuit having two nodes, a nonvolatile memory cell including two MIS transistors, a bit swapping unit configured to provide straight connections between the two nodes and the two MIS transistors during a first operation mode and to provide cross connections between the two nodes and the two MIS transistors during a second operation mode, and a control circuit configured to cause, in one of the first and second operation modes, the nonvolatile memory cell to store the data latched in the latch circuit as an irreversible change of transistor characteristics occurring in a selected one of the two MIS transistors, and further configured to cause, in another one of the first and second operation modes, the latch circuit to detect the data stored in the nonvolatile memory cell.

Abstract: A nonvolatile semiconductor memory device includes a latch circuit having two nodes, a nonvolatile memory cell including two MIS transistors, a bit swapping unit configured to provide straight connections between the two nodes and the two MIS transistors during a first operation mode and to provide cross connections between the two nodes and the two MIS transistors during a second operation mode, and a control circuit configured to cause, in one of the first and second operation modes, the nonvolatile memory cell to store the data latched in the latch circuit as an irreversible change of transistor characteristics occurring in a selected one of the two MIS transistors, and further configured to cause, in another one of the first and second operation modes, the latch circuit to detect the data stored in the nonvolatile memory cell.

Abstract: A polyimide film which, especially when superposed on a metal layer by the laminating method, has the function of diminishing the thermal distortion to be imposed on the material; an adhesive film and a flexible metal-clad laminate each comprising or obtained with the polyimide film. the polyimide film is obtained by reacting an aromatic diamine with an aromatic acid dianhydride and imidiating the polyamic acid obtained, and has a storage elastic modulus in a specific range.

Abstract: It is an object of the present invention to provide a heat-resistant adhesive sheet for suppressing fluctuation in dimensional stability of a flexible printed board or, in particular, of a two-layer flexible printed board which has recently been increasingly demanded and which is required to be more highly heat-resistant and reliable. The foregoing problems can be solved by a heat-resistant adhesive sheet having a heat-resistant adhesive layer, containing a thermoplastic polyimide, which is provided on at least one surface of an insulating layer containing a non-thermoplastic polyimide, the heat-resistant adhesive sheet having a stretching of not more than 10 mm at one side thereof.

Abstract: An optical waveguide element includes: an optical waveguide including an organic non-linear optical material; a first electrode arranged on one surface side of the optical waveguide; a second electrode arranged on another surface side of the optical waveguide; a protective member disposed on the second electrode, the protective member including (i) a third electrode which is provided on a first surface of the protective member, the first surface facing the second electrode, the third electrode being electrically connected to the second electrode, (ii) a fourth electrode which is provided on a second surface of the protective member, the second surface opposing the first surface, and (iii) a conductive portion which penetrates through the protective member from the first surface to the second surface, and electrically connects the third electrode and the fourth electrode.

Abstract: A nonvolatile semiconductor memory device includes a first latch to store data, a nonvolatile memory cell including two MIS transistors to store data as an irreversible change of transistor characteristics occurring in one of the two MIS transistors selected in response to the data stored in the first latch, a second latch to store data obtained by sensing a difference in the transistor characteristics between the two MIS transistors, a logic circuit to produce a signal indicative of comparison between the data of the first latch and the data of the second latch, and a control circuit configured to repeat a store operation storing data in the nonvolatile memory cell, a recall operation storing data in the second latch, and a verify operation producing the signal indicative of comparison until the signal indicates that the data of the first latch and the data of the second latch are the same.

Abstract: A nonvolatile semiconductor memory device includes a latch configured to store data, a plurality of word lines, a driver configured to activate one of the plurality of word lines, and a plurality of nonvolatile memory cells coupled to the respective word lines, each of the nonvolatile memory cells coupled to the latch so as to exchange stored data with the latch upon activation of a corresponding one of the word lines, each of the nonvolatile memory cells including two MIS transistors and configured to store data as an irreversible change of transistor characteristics occurring in one of the two MIS transistors, wherein the driver includes at least one nonvolatile memory cell storing count data responsive to a number of times storing of data has been performed with respect to the plurality of nonvolatile memory cells, and is configured to activate one of the word lines indicated by the count data.

Abstract: A nonvolatile semiconductor memory device includes a nonvolatile memory cell including an odd number of MIS transistor pairs, each of which stores one-bit data by creating an irreversible change of transistor characteristics in one of the two paired MIS transistors, latches equal in number to the odd number of MIS transistor pairs to store the odd number of one-bit data recalled from the MIS transistor pairs, the recalling of the one-bit data of a given MIS transistor pair being performed by sensing a difference in the transistor characteristics between the two paired MIS transistors of the given MIS transistor pair, and a majority decision circuit configured to make a majority decision based on the odd number of one-bit data to determine a bit value of the nonvolatile memory cell.

Abstract: A polyimide film which, when used in FPC production, is reduced in dimensional change during the production steps. In particular, a metal-clad laminate apt to have abnormal parts such as rumples is produced from the film, and an FPC reduced in dimensional change is obtained in high yield. The polyimide film has a tan ? peak temperature within a range of 320° C. or more and lower than 380° C. in measuring a dynamic viscoelasticity, and is characterized by having a maximum sag of 13 mm or less.

Abstract: A waveguide device includes a substrate and a first electrode, a first cladding layer, a waveguide, a second cladding layer, and a second electrode sequentially provided on the substrate. At least one of the first cladding layer, the waveguide, and second cladding layer includes a ligand compound which is capable of coordinating to a metal or metal ion.

Abstract: A nonvolatile semiconductor memory device includes a first latch to store data, a nonvolatile memory cell including two MIS transistors to store data as an irreversible change of transistor characteristics occurring in one of the two MIS transistors selected in response to the data stored in the first latch, a second latch to store data obtained by sensing a difference in the transistor characteristics between the two MIS transistors, a logic circuit to produce a signal indicative of comparison between the data of the first latch and the data of the second latch, and a control circuit configured to repeat a store operation storing data in the nonvolatile memory cell, a recall operation storing data in the second latch, and a verify operation producing the signal indicative of comparison until the signal indicates that the data of the first latch and the data of the second latch are the same.

Abstract: A waveguide device comprises a first multimode waveguide; a second multimode waveguide; a pair of intermediate single mode waveguides; an input-side single mode waveguides connected to the first multimode waveguide; a pair of output-side single mode waveguides connected to the second multimode waveguide; a pair of switching electrodes disposed to be superposed on the pair of intermediate single mode waveguides; and a ground electrode. The intermediate single mode waveguides are configured by a material whose refractive index is changed by voltages applied to the switching electrodes, the first multimode waveguide splits an optical signal into two signals whose intensities are equal, and the second multimode waveguide is formed, when voltages are not applied to the switching electrodes, to guide the optical signals out from the output-side single mode waveguides that are provided positions diagonal to the intermediate single mode waveguides through which the optical signals are propagated.

Abstract: A nonvolatile semiconductor memory device includes a control circuit, an inverting circuit, and memory units, each of the memory units including a latch having a first node and a second node, a plate line, a first MIS transistor having one of source/drain nodes coupled to the first node of the latch, another one of the source/drain nodes coupled to the plate line, and a gate node coupled to a word line, and a second MIS transistor having one of source/drain nodes coupled to the second node of the latch, another one of the source/drain nodes coupled to the plate line, and a gate node coupled to the word line, wherein the control circuit is configured to invert the data latched in the latch by reading the data from the latch, causing the inverting circuit to invert the read data, and writing the inverted data to the latch.

Abstract: A nonvolatile semiconductor memory device includes a latch configured to store data, a plurality of word lines, a driver configured to activate one of the plurality of word lines, and a plurality of nonvolatile memory cells coupled to the respective word lines, each of the nonvolatile memory cells coupled to the latch so as to exchange stored data with the latch upon activation of a corresponding one of the word lines, each of the nonvolatile memory cells including two MIS transistors and configured to store data as an irreversible change of transistor characteristics occurring in one of the two MIS transistors, wherein the driver includes at least one nonvolatile memory cell storing count data responsive to a number of times storing of data has been performed with respect to the plurality of nonvolatile memory cells, and is configured to activate one of the word lines indicated by the count data.

Abstract: Disclosed is an adhesive film having high dimensional stability which can be suitably used for two layer FPCs. Specifically, disclosed is an adhesive sheet composed of an insulting layer and an adhesive layer arranged on one side or both sides of the insulating layer. This adhesive sheet is characterized in that the insulating layer has a ratio E?2/E?1 between the storage elasticity modulus E?1 at 25° C. and the storage elasticity modulus E?2 at 380° C. of not more than 0.2 and a coefficient of thermal expansion in the MD direction of 5-15 ppm at 100-200° C. It is further characterized in that the change in the coefficient of thermal expansion of the adhesive sheet at 100-250° C. after heat treatment at 380° C. for 30 second under tension of 20 kg/m is not more than 2.5 ppm in the tension direction and not more than 10 ppm in the direction perpendicular to the tension direction.

Abstract: Disclosed is a polyimide film which is free from coarse particles caused by aggregation of a filler, therefore, can avoid abnormal electrical discharge during a discharge treatment, repelling during application of an adhesive, and the like. Also disclosed is a method for production of the polyimide film.

Abstract: The present invention provides a polyimide film and its usage. The polyimide film according to the present invention does not cause dimensional change due to thermal stress. The present invention particularly relates to a polyimide film and its usage, which polyimide film has a characteristic of suppressing thermal deformation of the material in lamination of a polyimide film and a metal layer by a laminate method. The polyimide film according to the present invention has the following characteristics: (1) an inflexion point of storage modulus ranges from 270° C. to 340° C.; (2) tan ?, which is a value obtained by dividing a loss elastic modulus by a storage modulus, has a peak-top in a range of 320° C. to 410° C.; (3) a storage modulus at 380° C. ranges from 0.4 GPa to 2.0 GPa; and (4) a storage modulus ?1 at the inflexion point (GPa) and a storage modulus ?2 at 380° C. (GPa) satisfy: 85?{(?1??2)/?1}×100?65.