Abstract: Communication between a scanner and a wireless IC tag is performed with certainty. An installation hole is formed in the side surface of a tire and a holder with wireless IC tag 10 housing a wireless IC tag 18 is inserted into this installation hole. The holder with wireless IC tag 10 can open and close. It is opened, the wireless IC tag 18 is housed in a pocket 20, the holder with wireless IC tag 10 is closed and inserted into the installation hole. The holder with wireless IC tag 10 housing the wireless IC tag 18 is inserted into the outer surface of the tire so a scanner can be brought close to the wireless IC tag 18, which can reliably communicate with the scanner. Further, the holder with wireless IC tag 10 is installed to the tire after vulcanization so there does not cause damage to the wireless IC tag 18 due to heat and the like.

Abstract: A nonvolatile semiconductor memory device includes a data input buffer configured to receive data from outside the device, a nonvolatile memory cell including two MIS transistors to store first data received by the data input buffer by creating an irreversible change of transistor characteristics in one of the two MIS transistors, whichever is selected in response to a value of the first data, a sense latch coupled to the nonvolatile memory cell and configured to store the first data obtained by sensing a difference in the transistor characteristics between the two MIS transistors of the nonvolatile memory cell, and a logic circuit configured to produce a signal indicative of comparison between the first data stored in the sense latch and second data received by the data input buffer, wherein no data path to output the first data stored in the sense latch to outside the nonvolatile semiconductor memory device exists.

Abstract: A nonvolatile semiconductor memory device includes a plurality of control lines, a control circuit configured to assert selected ones of the control lines, and a plurality of memory cell arranged in rows and columns and including respective latch circuits and respective nonvolatile memory cells, wherein the memory cell units are configured to perform a write operation in which the latch circuits of the memory cell units on a selected row store respective bits of the input data, and are further configured to perform a store operation in which the respective bits of the input data are transferred from the latch circuits to the nonvolatile memory cells for storage therein in response to assertion of respective control lines by the control circuit, so that only one or more selective bits of the input data selected by the control circuit are stored in the nonvolatile memory cells.

Abstract: A process for the production of non-thermoplastic polyimide film whose precursor solution has high storage stability and which exhibits high adhesiveness even without expensive surface treatment, more specifically, a process fro the production of non-thermoplastic polyimide film made of a non-thermoplastic polyimide containing a block resulting from a thermoplastic polyimide which comprises (A) the step of forming a prepolymer having amino or an acid anhydride group at the end in an organic polar solvent (B) the step of synthesizing a polyimide precursor solution by using the obtained prepolymer, an acid anhydride, and a diamine in such a way as to become substantially equimolar over the whole step, and (C) the step of casting a film-forming dope containing the polyimide precursor solution and subjecting the resultant dope to chemical and/or thermal imidization, wherein the diamine and acid anhydride used in the step (A) are selected so that the reaction of both with each other in equimolar amounts can give a

Abstract: There is provided a system and method for quantitative analysis of a cause of tire trouble capable of quantitatively analyzing whether the tire trouble is caused by the tire itself or in a matter of harshness of a tire using condition in light of not only a force acting on a tire mounted on a running vehicle but also harshness of a tire using condition such as a traveling speed of the vehicle, level difference of a road surface, a curve and gradient information.

Abstract: An optical splitter/coupler has: a multimode waveguide having an electrooptic effect, and propagating light in a multimode; one incident waveguide propagating light in a single mode, and inputting the light to the multimode waveguide; one pair of emitting waveguides guiding-out, in a single mode, lights which have propagated-in through the multimode waveguide; at least one pair of individual electrodes provided so as to be positioned in vicinities of respective side edges on one surface of the multimode waveguide; and a ground electrode provided on another surface, wherein the multimode waveguide has a length such that 3(n+1) bright spots arise at a central portion and at both side edge portions due to incident light, the individual electrodes are provided at positions corresponding to an upstream-most one pair of the bright spots, and the emitting waveguides are connected to positions corresponding to a downstream-most one pair of the bright spots.

Abstract: An optical splitter/coupler has: a multimode waveguide having an electrooptic effect, and propagating light in a multimode; one incident waveguide propagating light in a single mode, and inputting the light to the multimode waveguide; one pair of emitting waveguides guiding-out, in a single mode, lights which have propagated-in through the multimode waveguide; at least one pair of individual electrodes provided so as to be positioned in vicinities of respective side edges on one surface of the multimode waveguide; and a ground electrode provided on another surface, wherein the multimode waveguide has a length such that 3(n+1) bright spots arise at a central portion and at both side edge portions due to incident light, the individual electrodes are provided at positions corresponding to an upstream-most one pair of the bright spots, and the emitting waveguides are connected to positions corresponding to a downstream-most one pair of the bright spots.

Abstract: By preparing a package substrate which has a plurality of lands of NSMD structure, and the output wiring and dummy wiring which were connected to each of the lands, and have been arranged mutually in the location of 180° symmetry, and printing solder by a printing method to the lands after the package assembly, the variation in the height of the solder coat between lands can be reduced, and improvement in the mountability of LGA (semiconductor device) is achieved.

Abstract: A bearing (crank bearing 6) is constituted of an upper bearing (61) that is attached to a cylinder block, a lower bearing (67) that is attached to a crank cap, and a bearing filter (71) for filtering engine oil. The bearing filter (71) is fitted in an oil hole (62A) of the upper bearing (61).

Abstract: The reliability of the semiconductor device which has the structure which stores a plurality of semiconductor chips with which plane sizes differ in the same sealing body in the state where they are accumulated via the insulating film which has adhesive property is improved. In the semiconductor device which has the structure which stores a plurality of semiconductor chips with which plane sizes differ in the same sealing body in the state where they are accumulated via DAF, thickness of DAF of the back surface of the uppermost semiconductor chip with which the control circuit was formed was made thicker than each of DAF of the back surface of the lower layer semiconductor chip with which the memory circuit was formed. Hereby, the defect that the bonding wire which connects the uppermost semiconductor chip and a wiring substrate contacts the main surface corner part of a lower layer semiconductor chip can be reduced.

Abstract: A nonvolatile semiconductor memory device includes a control circuit, an inverting circuit, and memory units, each of the memory units including a latch having a first node and a second node, a plate line, a first MIS transistor having one of source/drain nodes coupled to the first node of the latch, another one of the source/drain nodes coupled to the plate line, and a gate node coupled to a word line, and a second MIS transistor having one of source/drain nodes coupled to the second node of the latch, another one of the source/drain nodes coupled to the plate line, and a gate node coupled to the word line, wherein the control circuit is configured to invert the data latched in the latch by reading the data from the latch, causing the inverting circuit to invert the read data, and writing the inverted data to the latch.

Abstract: A metal-coated polyimide film is excellent in long-term adhesion reliability, exhibits various dimensional stabilities, and is particularly suitable for FPC, COF and TAB applications. The metal-coated polyimide film comprises a non-thermoplastic polyimide film; and a metal layer being directly formed on one surface or both surfaces of the non-thermoplastic polyimide film without using an adhesive, wherein the non-thermoplastic polyimide film contains a non-thermoplastic polyimide resin having a thermoplastic polyimide block component.

Abstract: An optical switching element comprising: a multimode waveguide having an electro-optical effect; one or a plurality of first single mode waveguides; a plurality of second single mode waveguides; a first electrode arranged in the vicinity of one edge on one side of the multimode waveguide; a second electrode arranged in the vicinity of the other edge on the same side of the multimode waveguide; and a third electrode arranged on the other side of the multimode waveguide, over the first electrode and the second electrode being arranged so as to be positioned on bright spots formed by multimode interference in an optical mode field generated by the light propagating through the multimode waveguide, and an optical path being switched between the first single mode waveguide and the second single mode waveguide by applying voltage between the first electrode and the third electrode and between the second electrode and the third electrode, is provided.

Abstract: By preparing a package substrate which has a plurality of lands of NSMD structure, and the output wiring and dummy wiring which were connected to each of the lands, and have been arranged mutually in location of 180° symmetry, and printing solder by a printing method to the lands after the package assembly, the variation in the height of the solder coat between lands can be reduced, and improvement in the mountability of LGA (semiconductor device) is achieved.

Abstract: An ink-jet head includes a nozzle array including plural nozzles. The nozzle array has a first nozzle group arranged in the center thereof and second nozzle groups arranged further on outer sides than the first nozzle group. Inter-nozzle pitches of the second nozzle groups are larger than inter-nozzle pitches of the first nozzle group. A direction in which nozzles of the second nozzle group eject an ink and a direction in which nozzles of the first nozzle group eject the ink are different.

Abstract: There is provided a system and method for quantitative analysis of a cause of tire trouble capable of quantitatively analyzing whether the tire trouble is caused by the tire itself or in a matter of harshness of a tire using condition in light of not only a force acting on a tire mounted on a running vehicle but also harshness of a tire using condition such as a traveling speed of the vehicle, level difference of a road surface, a curve and gradient information.

Abstract: Disclosed is a polyimide film which exhibits high adherability to a metal foil via an adhesive layer containing a thermoplastic polyimide without requiring a special surface treatment. Specifically disclosed is a non-thermoplastic polyimide film obtained by imidizing a polyamic acid solution which is obtained from aromatic diamine and aromatic acid dianhydride. This non-thermoplastic polyimide film is characterized in that the aromatic diamine contains 4,4?-diaminodiphenylether and bis{4-(4-aminophenoxy)phenyl}propane, and the solution containing a polyamic acid is obtained by a specific production method.

Abstract: A laminate support includes a layered elastic body structured by rigid plates, which have rigidity, and elastic plates, which have elasticity, being layered alternately in a predetermined layering direction, and a hollow portion is formed in the layered elastic body in the layering direction. A plastic fluid material structured by an elastic perfect plastic body (a non-hardening elastoplastic body) is placed-in the elastic body hollow portion of the layered elastic body. Further, a plurality of particle-shaped hard fillers, which are structured of a hard material which is considered to be a rigid body with respect to the plastic fluid material, are filled-in the plastic fluid material so as to be a predetermined volume fill rate. A laminate support, which can be disposed of or the like at a low cost and which can exhibit a large damping force, can be obtained.

Abstract: It is an object of the present invention to provide an adhesive film which is used for producing, by a laminating method, a flexible metal-clad laminate in which the change in dimensions is suppressed, a flexible metal-clad laminate including the adhesive film, and a production method therefor.

Abstract: For high density packaging of a semiconductor device, the semiconductor device has a multi-layer substrate, a first-stage chip connected electrically to the multi-layer substrate, other package substrates stacked in three stages on the multi-layer substrate and each connected to an underlying wiring substrate through solder balls, second-, third- and fourth-stage chips electrically connected respectively to the other package substrates, and solder balls provided on the bottom multi-layer substrate. The number of wiring layers in the bottom multi-layer substrate which has a logic chip is larger than that in the package substrates which have memory chips, whereby the semiconductor device can have a wiring layer not used for distribution of wires to the solder balls and wiring lines in the wiring layer can be used for the mounting of another semiconductor element or a passive component to attain high density packaging of the semiconductor device as a stacked type package.