Abstract: The combine may include a threshing tank that is configured to store a threshing product obtained by the threshing device and includes a lower tapered portion formed in a bottom portion. A bottom screw is provided inside the lower tapered portion and configured to discharge the threshing product from the threshing tank. A threshing discharge device is connected to the bottom screw and configured to convey the threshing product from the bottom screw and discharge the threshing product in a body outward direction. The threshing tank includes an inspection port formed in a bottom section of the lower tapered portion, and a lid configured to open and close the inspection port, and the lid opens and closes by swinging upward and downward about a swing axis that is not parallel with a screw axis of the bottom screw.

Abstract: A compound semiconductor device comprises a heterojunction bipolar transistor including a plurality of unit transistors, a capacitor electrically connected between a RF input wire and a base wire for each unit transistor of the unit transistors, and a bump electrically connected to emitters of the unit transistors. The unit transistors are arranged in a first direction. The bump is disposed above the emitters of the unit transistors while extending in the first direction. The transistors include first and second unit transistors, the respective emitters of the first and second unit transistors being disposed on first and second sides, respectively, of a second direction, perpendicular to the first direction, with respect to a center line of the bump extending in the first direction. The capacitor is not covered by the bump, and respective lengths of the respective base wires connected respectively to the first and second unit transistors are different.

Abstract: A circuit board includes a grounding land conductor that is provided on a first main surface of a base material, and overlaps with a region in which an electronic component of a bump connection type is mounted, when viewed in a direction perpendicular to the first main surface. The grounding land conductor includes a mounting pad portion on which a bump of the electronic component is mounted, a common portion that overlaps with the electronic component, when viewed in the direction perpendicular to the main surface, and a connecting portion that connects the mounting pad portion and the common portion and is smaller in width than the mounting pad portion.

Abstract: The present disclosure is directed to an electronic component mounting structure including: a circuit board provided on a surface thereof with a first electrode containing Cu as a main component; and an electronic component mounted on the circuit board, the electronic component including a second electrode on a surface thereof; wherein the second electrode includes a first plating containing Ni as a main component and a second plating containing Sn as a main component formed on a surface of the first plating, and an intermediate bonding layer is provided between the first plating and the first electrode, and the intermediate bonding layer includes a first region containing an alloy of Cu and Sn as a main component and a second region containing Sn as a main component.

Abstract: A compound semiconductor device comprises a heterojunction bipolar transistor including a plurality of unit transistors, a capacitor electrically connected between a RF input wire and a base wire for each unit transistor of the unit transistors, and a bump electrically connected to emitters of the unit transistors. The unit transistors are arranged in a first direction. The bump is disposed above the emitters of the unit transistors while extending in the first direction. The transistors include first and second unit transistors, the respective emitters of the first and second unit transistors being disposed on first and second sides, respectively, of a second direction, perpendicular to the first direction, with respect to a center line of the bump extending in the first direction. The capacitor is not covered by the bump, and respective lengths of the respective base wires connected respectively to the first and second unit transistors are different.

Abstract: A compound semiconductor device comprises a heterojunction bipolar transistor including a plurality of unit transistors, a capacitor electrically connected between a RF input wire and a base wire for each unit transistor of the unit transistors, and a bump electrically connected to emitters of the unit transistors. The unit transistors are arranged in a first direction. The bump is disposed above the emitters of the unit transistors while extending in the first direction. The transistors include first and second unit transistors, the respective emitters of the first and second unit transistors being disposed on first and second sides, respectively, of a second direction, perpendicular to the first direction, with respect to a center line of the bump extending in the first direction. The capacitor is not covered by the bump, and respective lengths of the respective base wires connected respectively to the first and second unit transistors are different.

Abstract: A lid is supported so as to be open and close by swinging upward and downward about a swing axis that is not parallel with the screw axis of a bottom screw.

Abstract: A rotor includes: a rotor core; a magnet that is arranged along an axial direction of a central axis of the rotor core; and a heat pipe that is arranged around the central axis of the rotor core, wherein the heat pipe includes: an operation liquid that is provided in an internal space of the heat pipe and that allows heat to move via evaporation and condensation; a heated part that extends so as to be parallel with the central axis, that receives heat from the magnet, and that is heated; and a cooled part that is arranged on one side in a longitudinal direction of the heated part and that is cooled, wherein the cooled part is slanted away from the central axis of the rotor core in a direction from the one side in the longitudinal direction of the heated part toward another side in the longitudinal direction of the heated part.

Abstract: A compound semiconductor device comprises a heterojunction bipolar transistor including a plurality of unit transistors, a capacitor electrically connected between a RF input wire and a base wire for each unit transistor of the unit transistors, and a bump electrically connected to emitters of the unit transistors. The unit transistors are arranged in a first direction. The bump is disposed above the emitters of the unit transistors while extending in the first direction. The transistors include first and second unit transistors, the respective emitters of the first and second unit transistors being disposed on first and second sides, respectively, of a second direction, perpendicular to the first direction, with respect to a center line of the bump extending in the first direction. The capacitor is not covered by the bump, and respective lengths of the respective base wires connected respectively to the first and second unit transistors are different.

Abstract: A semiconductor device includes a heterojunction bipolar transistor and a bump. The heterojunction bipolar transistor (HBT) includes a plurality of unit transistors. The bump is electrically connected to emitters of the plurality of unit transistors through respective overlying conductor filled via openings that overlap in a plan view with a width portion of the bump. The semiconductor device reduces heat resistance in an HBT cell by satisfying two conditions, the first of which is related to specific sizing and positioning of a width portion of the overlying via opening relative to the width portion of the bump, and the second of which is related to positioning the base electrode entirely within a specific region of the width portion of the overlapping overlying via opening.

Abstract: A compound semiconductor device includes a heterojunction bipolar transistor and a bump. The heterojunction bipolar transistor includes a plurality of unit transistors. The bump is electrically connected to emitters of the plurality of unit transistors. The plurality of unit transistors are arranged in a first direction. The bump is disposed above the emitters of the plurality of unit transistors while extending in the first direction. The emitter of at least one of the plurality of unit transistors is displaced from a center line of the bump in the first direction toward a first side of a second direction which is perpendicular to the first direction. The emitter of at least another one of the plurality of unit transistors is displaced from the center line of the bump in the first direction toward a second side of the second direction.

Abstract: A semiconductor device includes a heterojunction bipolar transistor and a bump. The heterojunction bipolar transistor (HBT) includes a plurality of unit transistors. The bump is electrically connected to emitters of the plurality of unit transistors through respective overlying conductor filled via openings that overlap in a plan view with a width portion of the bump. The semiconductor device reduces heat resistance in an HBT cell by satisfying two conditions, the first of which is related to specific sizing and positioning of a width portion of the overlying via opening relative to the width portion of the bump, and the second of which is related to positioning the base electrode entirely within a specific region of the width portion of the overlapping overlying via opening.

Abstract: A rotor includes: a rotor core; a magnet that is arranged along an axial direction of a central axis of the rotor core; and a heat pipe that is arranged around the central axis of the rotor core, wherein the heat pipe includes: an operation liquid that is provided in an internal space of the heat pipe and that allows heat to move via evaporation and condensation; a heated part that extends so as to be parallel with the central axis, that receives heat from the magnet, and that is heated; and a cooled part that is arranged on one side in a longitudinal direction of the heated part and that is cooled, wherein the cooled part is slanted away from the central axis of the rotor core in a direction from the one side in the longitudinal direction of the heated part toward another side in the longitudinal direction of the heated part.

Abstract: A power amplifier module includes a substrate, a power amplifier having a first surface on which an electrode is defined and a second surface opposite the first surface, the first surface faces a principal surface of the substrate, a surface acoustic wave duplexer having a first surface on which an electrode is defined and a second surface opposite the first surface, the first surface faces the principal surface of the substrate, a heat dissipation unit defined on another principal surface of the substrate, a heat dissipation path that connects a connecting portion between the power amplifier and the principal surface to the heat dissipation unit, an insulating resin that covers the power amplifier and the surface acoustic wave duplexer, a conductive shield that covers the insulating resin, and a first conductive unit defined on the second surface of the surface acoustic wave duplexer and electrically connected to the conductive shield.

Abstract: A rotary electric machine rotor includes a rotor core and a permanent magnet. The rotor core includes a core main body block, a passage block, and a cooling pipe. The permanent magnet is bonded and fixed to the core main body block. The passage block has a coolant passage connected to a coolant introduction passage of a rotation shaft and is joined to an end part in an axial direction of the core main body block. The cooling pipe is connected to the coolant passage of the passage block and is arranged along an axial direction in the vicinity of the permanent magnet of the core main body block.

Abstract: A compound semiconductor device includes a heterojunction bipolar transistor and a bump. The heterojunction bipolar transistor includes a plurality of unit transistors. The bump is electrically connected to emitters of the plurality of unit transistors. The plurality of unit transistors are arranged in a first direction. The bump is disposed above the emitters of the plurality of unit transistors while extending in the first direction. The emitter of at least one of the plurality of unit transistors is displaced from a center line of the bump in the first direction toward a first side of a second direction which is perpendicular to the first direction. The emitter of at least another one of the plurality of unit transistors is displaced from the center line of the bump in the first direction toward a second side of the second direction.

Abstract: A compound semiconductor device includes a heterojunction bipolar transistor and a bump. The heterojunction bipolar transistor includes a plurality of unit transistors. The bump is electrically connected to emitters of the plurality of unit transistors. The plurality of unit transistors are arranged in a first direction. The bump is disposed above the emitters of the plurality of unit transistors while extending in the first direction. The emitter of at least one of the plurality of unit transistors is displaced from a center line of the bump in the first direction toward a first side of a second direction which is perpendicular to the first direction. The emitter of at least another one of the plurality of unit transistors is displaced from the center line of the bump in the first direction toward a second side of the second direction.

Abstract: An electronic component includes an electronic component element including first and second main surfaces, a heat-dissipation accelerating member on the first main surface, a sealing resin layer sealing the electronic component element, and a shielding member provided on the sealing resin layer and electrically connected to the heat-dissipation accelerating member. The heat-dissipation accelerating member includes fourth and fifth main surfaces. The electronic component includes a connecting member disposed on the fifth main surface of the heat-dissipation accelerating member and electrically connecting at least one portion of the heat-dissipation accelerating member and the shielding member. The connecting member has a higher thermal conductivity than the sealing resin layer. The contact area between the heat-dissipation accelerating member and the connecting member is smaller than the area of the fifth main surface.

Abstract: A compound semiconductor device includes a heterojunction bipolar transistor and a bump. The heterojunction bipolar transistor includes a plurality of unit transistors. The bump is electrically connected to emitters of the plurality of unit transistors. The plurality of unit transistors are arranged in a first direction. The bump is disposed above the emitters of the plurality of unit transistors while extending in the first direction. The emitter of at least one of the plurality of unit transistors is displaced from a center line of the bump in the first direction toward a first side of a second direction which is perpendicular to the first direction. The emitter of at least another one of the plurality of unit transistors is displaced from the center line of the bump in the first direction toward a second side of the second direction.

Abstract: A compound semiconductor device includes a heterojunction bipolar transistor and a bump. The heterojunction bipolar transistor includes a plurality of unit transistors. The bump is electrically connected to emitters of the plurality of unit transistors. The plurality of unit transistors are arranged in a first direction. The bump is disposed above the emitters of the plurality of unit transistors while extending in the first direction. The emitter of at least one of the plurality of unit transistors is displaced from a center line of the bump in the first direction toward a first side of a second direction which is perpendicular to the first direction. The emitter of at least another one of the plurality of unit transistors is displaced from the center line of the bump in the first direction toward a second side of the second direction.