Abstract: There is provided a solid state imaging device using a MOS image sensor of a threshold voltage modulation system employed in a video camera, an electronic camera, an image input camera, a scanner, a facsimile, or the like. In configuration, in the solid state imaging device that comprises a photo diode formed in a second semiconductor layer 15a of opposite conductivity type in a first semiconductor layer 12 and 32 of one conductivity type, and a light signal detecting insulated gate field effect transistor formed in a fourth semiconductor layer 15b of opposite conductivity type in a third semiconductor layer 12 of one conductivity type adjacently to the photo diode, a carrier pocket 25 is provided in the fourth semiconductor layer 15b, and a portion of the first semiconductor layer 12, 32 under the second semiconductor layer 15a is thicker than a portion of the third semiconductor layer 12 under the fourth semiconductor layer 15b in a depth direction.

Abstract: Disclosed is a solid state imaging device, comprising a unit pixel 101 including a photo diode 111 and a MOS transistor 112 for optical signal detection provided with a high-density buried layer 25 for storing optically generated charges generated by light irradiation in the photo diode 111, a vertical scanning signal driving scanning circuit 102 for outputting a scanning signal to a gate electrode 19, and a voltage boost scanning circuit 108 for outputting a boosted voltage higher than a power source voltage to a source region 16. In this case, a boosted voltage is applied from the voltage boost scanning circuit 108 to the source region 16, and the optically generated charges stored in the high-density buried layer 25 are swept out from the high-density buried layer 25 by a source voltage and a gate voltage risen by the boosted voltage.

Abstract: A solid-state imaging device is provided, which is capable of increasing an S/N ratio while enhancing a dynamic range, when a photoelectric signal is converted into a digital signal. This solid-state imaging device comprises: a plurality of photoelectric conversion devices arrayed in rows and columns, each of the photoelectric conversion devices converting an optical signal into an electric signal and outputting a first signal voltage; a difference signal generation circuit provided for each column, for sequentially inputting the first signal voltage and a second signal voltage obtained by initializing the photoelectric conversion devices, thereafter converting the first signal voltage and the second signal voltage into charges, generating a difference signal therebetween, and then outputting the difference signal after adjusting a gain according to a level of the difference signal; and an analog/digital conversion circuit connected to the output of the difference signal generation circuit.

Abstract: The present invention relates to a solid-state imaging device. More specifically, the invention relates to the solid-state imaging device, which uses a MOS image sensor of a threshold voltage modulation system used for a video camera, an electronic camera, an image input camera, a scanner, a facsimile or the like. The solid-state imaging device is constructed in a manner that pixels are arrayed in a matrix form. Each pixel includes: a photo-diode for generating photo-generated charges by light irradiation; and an insulated gate field effect transistor for light signal detection, provided adjacently to the photo-diode, for storing the photo-generated charges beneath a channel region under a gate electrode, and modulating a threshold voltage by the stored photo-generated charges to detect a light signal. The gate electrodes are disposed at at least four directions around a periphery of the photo-diode, and the photo-diodes are disposed at at least four directions around a periphery of the gate electrode.

Abstract: The solid state imaging device comprises a solid state imaging element for storing light generating charges in a high concentration buried layer under a channel, modulating a threshold voltage, and detecting a light signal, a signal output circuit 105 for outputting a difference voltage between a first source potential after light modulation and a second source potential before the light modulation, wherein the signal output circuit 105 stores the first source potential and the second source potential in a first line memory (Lms) and a second line memory (Lmn) each formed of an input capacitor which is connected to a source region of a light signal detecting insulated gate field effect transistor respectively and outputs a difference voltage (Vout=VoutS−VoutN) between the first source potential and the second source potential via switched capacitor circuits.

Abstract: The present invention relates to a dual bit nonvolatile programmable read/write memory.

Abstract: The present invention relates to a solid-state imaging device. More specifically, the invention relates to the solid-state imaging device, which uses a MOS image sensor of a threshold voltage modulation system used for a video camera, an electronic camera, an image input camera, a scanner, a facsimile or the like. The solid-state imaging device is constructed in a manner that pixels are arrayed in a matrix form. Each pixel includes: a photo-diode for generating photo-generated charges by light irradiation; and an insulated gate field effect transistor for light signal detection, provided adjacently to the photo-diode, for storing the photo-generated charges beneath a channel region under a gate electrode, and modulating a threshold voltage by the stored photo-generated charges to detect a light signal. The gate electrodes are disposed at at least four directions around a periphery of the photo-diode, and the photo-diodes are disposed at at least four directions around a periphery of the gate electrode.

Abstract: Disclosed is a solid state imaging device, comprising a unit pixel 101 including a photo diode 111 and a MOS transistor 112 for optical signal detection provided with a high-density buried layer 25 for storing optically generated charges generated by light irradiation in the photo diode 111, a vertical scanning signal driving scanning circuit 102 for outputting a scanning signal to a gate electrode 19, and a voltage boost scanning circuit 108 for outputting a boosted voltage higher than a power source voltage to a source region 16. In this case, a boosted voltage is applied from the voltage boost scanning circuit 108 to the source region 16, and the optically generated charges stored in the high-density buried layer 25 are swept out from the high-density buried layer 25 by a source voltage and a gate voltage risen by the boosted voltage.

Abstract: Disclosed is a method of storing optically generated charges by an optical signal in a solid state imaging device, which is particularly a method of storing optically generated charges by an optical signal in a solid state imaging device using a MOS image sensor of a threshold voltage modulation type, which is used for a video camera, an electronic camera, an image input camera, a scanner, a facsimile or the like.

Abstract: The present invention is a method for detecting photo signals using an imaging device, comprising steps of photo-generating holes in a well region 15 of a photo-diode by a signal light, transferring the photo-generated holes through a bulk of the well region 15 to a heavily doped buried layer 25 which is formed in the well region 15 near a source region 16 by doping that region with impurity heavier than the well region (15) of an insulated gate FET, storing the photo-generated holes in the heavily doped buried layer 25 to thereby change the threshold of the FET corresponding to the amount of the photo-generated charge, and reading the change in the threshold as the amount of signal light received by the photo-sensor.

Abstract: An automatic light measuring device for an image pickup device includes a pair of line sensors suitable for an automatic focusing adjustment and disposed on a semiconductor chip at positions spaced apart by a predetermined distances, an integration time controller for generating an integration control signal for controlling the charge accumulation by incident light by detecting the amount of charges accumulated in the line sensors, a first exposure amount detector for calculating the intensity of incident light from the integration control signal, a second exposure amount detector inclusive of photoelectric conversion elements formed on the semiconductor chip, for detecting the amount of incident light, a pair of lenses mounted above the pair of line sensors for focusing the image of substantially the same subject within the central area of the field of view, and an optical system for applying light within the area broader than the central area of the field of view to the surface of the semiconductor chip inc

Abstract: A phase difference detection type rangefinder is provided which calculates a distance value of each subject of two or more subjects at different distances.

Abstract: An output current of a photodiode is charged in a capacitor, and the voltage change of the capacitor is monitored by a plurality of comparators. The time required for the capacitor voltage to reach a predetermined value is counted by using a clock signal input unit for inputting a clock signal of a predetermined frequency, and a counter for counting an upper part of a number corresponding to a logarithm of a number of clocks of the clock signal generated after the integration start by a photoelectric conversion unit. The outputs of the comparators when the counter counts the upper part are latched, and the lower part of the number is supplied.

Abstract: A phase difference detection unit for an automatic focusing system of a camera or the like. The phase difference detecting unit includes a pair of linear image pickup devices which receive a pair of optical images of an object formed by the lens in the automatic focusing system of a camera or the like. The detecting unit also has a correlation operating circuit which determines whether or not the lens of the focusing system is in a proper focus condition. The proper focus condition is determined by a minimum correlation value output by the correlation operating circuit, the value being indicative of the correlation between a pair of phase shifted analog electrical signals representative of the optical images received by the pickup devices. The correlation operating circuit is capable of operation at high speed with improved accuracy by maintaining the capacitive loads of the input terminals of the correlation operating circuit.

Abstract: A pair of optical systems of the same characteristics are disposed spaced apart by a base line length in the direction perpendicular to an optical axis, to form a focal plane, on which a standard photosensor and a reference photosensor, each having a plurality of photosensor elements, are disposed. An image of an object is focused onto the standard and reference photosensors, to generate a standard optical signal and a reference optical signal which are compared with each other, while changing the phase of the reference optical signal relative to the phase of the standard optical signal to calculate correlation factors. A distance to the object is detected from a phase having an extreme value of the calculated correlation factors. If the calculated correlation factors are asymmetrical relative to the extreme value, one correlation factor change by a unit phase shift before the extreme value is subtracted from the other correlation factor change by the unit phase shift after the extreme value.

Abstract: A phase difference detecting type autofocusing device capable of selectively focusing a desired one of a plurality of subjects within a field of view, by using a simple structure. The phase difference detecting type autofocusing device includes an optical system having first and second lenses, the first and second lenses having the same focal length and disposed on a first plane with the optical axes of the lenses being set in parallel. A plurality of first photosensors are disposed on a second plane in parallel with the first plane, for converting information of images focused by the first lens into electric signals; and a plurality of second photosensors are disposed on the second plane at positions covered by the second lens, for converting information of images focused by the second lent into electric signals. Each second photosensor is spaced apart in the same direction by the same distance from a corresponding one of the plurality of first photosensors.

Abstract: A CCD amplifier circuit including an active load type source-grounded inverting amplifier circuit which includes a driving MOS transistor, an active load MOS transistor connected to the driving MOS transistor, and a control circuit. The control circuit controls the voltage at the gate electrode of the active load MOS transistor with a control signal of low output impedance which is substantially inversely proportional to the drain-source voltage of the active load MOS transistor and level-shifted by a predetermined voltage. Further, a CCD delay line includes a floating diffusion region of predetermined impurities formed at an end of a charge-coupled device with a gate section having a predetermined fixed gate voltage, and a switched capacitor integrator for detecting the injection charge of the floating diffusion region to detect signal charges transferred to the floating diffusion region from the charge-coupled device.

Abstract: A charge-coupled device (CCD) delay line having a temperature compensation circuit capable of compensating for temperature variations for providing an accurate and consistent delay of an input signal. The temperature compensation circuit includes first and second registers for transferring charges, and a sample-and-hold circuit connected between outputs of each register and two inputs of a differential amplifier. The differential amplifier supplies a signal which corresponds to temperature variations to properly bias the input signal.

Abstract: A phase-difference detector for use with an auto-focus detecting apparatus of a camera, the detector is capable of performing an arithmetic correlation process for detecting a phase-difference at a high speed with high accuracy. This detector uses an analog correlation arithmetic device for carrying out an analog correlation arithmetic process which generates correlative values associated with a pair of analog electric signals outputted from a pair of optical sensors. An A/D converter converts the generated correlative values outputted from the analog correlation arithmetic device into digital signals. The correlation arithmetic operation is done by directly using the analog signals generated during a photoelectric conversion, and the correlative values obtained by this computation are converted into digital signals, thereby allowing the arithmetic process to be performed at a high speed.

Abstract: A peak level detecting apparatus for image sensors by which the maximum light value of a remote object is detected effectively utilizing the dynamic range of image sensors. The peak level detecting apparatus realizes a detection of the remote object patterns without any saturation in photoelectric devices by adjusting the exposure time with the detection of induced signal change in at least one of the photoelectric devices reaching the predetermined peak level, in order to improve the dynamic range and the signal to noise ratio.