Abstract: Disclosed herein is an image processing apparatus including: a signal processing unit configured to acquire data of a captured image; a correction unit configured to correct the captured image to an image suitable for display; a synthesis unit configured to synthesize an image for synthesis transmitted from an apparatus, which is not provided integrally with the image processing apparatus, with the captured image; and an image display controlling unit configured to control a display panel to display the synthesized image. The correction unit carries out, from among processes for correcting the captured image to the image suitable for display, part of the correction processes for the captured image before the synthesis by the synthesis unit and carries out remaining correction processes for the image after the synthesis.

Abstract: A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.

Abstract: A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.

Abstract: A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.

Abstract: A heat exchanger comprising: a heat exchange unit that exchanges heat between a heat transfer medium and a heat exchange object; a phase change unit, which comprises a liquid phase space that accommodates the heat transfer medium in a liquid phase state, and a gas phase space that accommodates the heat transfer medium in a gas phase state, the heat transfer medium being capable of moving into and out of the gas phase space; and a first channel along which the heat transfer medium is moved from the phase change unit to the heat exchange unit, wherein the heat exchanger is configured such that a saturated vapor pressure at a temperature of the heat transfer medium in the liquid phase flowing into the phase change unit differs from a pressure of the heat transfer medium in the gas phase in the gas phase space.

Abstract: A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.

Abstract: A switching device sequentially switches from having an evaporator-condenser generate an adsorbate and an adsorbent adsorb the adsorbate, to having an evaporator-condenser condense the adsorbate and an adsorbent desorb the adsorbate, such that the evaporator-condenser that generates the adsorbate and the adsorbent that adsorbs the adsorbate face each other, and the evaporator-condenser that condenses the adsorbate and the adsorbent that desorbs the adsorbate face each other. Accordingly, one adsorbent repeatedly desorbs and adsorbs in alternation, and another adsorbent repeatedly adsorbs and desorbs in alternation.

Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

Abstract: An adsorption heat pump includes: an evaporator/condenser including a section that evaporates a first heat exchange-medium and pipe through which a second heat exchange-medium flows; first adsorption devices, each including an adsorption-section in which the first heat exchange-medium that has been evaporated reacts and retains the first heat exchange-medium, and pipe through which the second heat exchange-medium flows; and second adsorption device in which first heat exchange-medium that has been released from the first adsorption devices reacts and retains the first heat exchange-medium.

Abstract: A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.

Abstract: An adsorption heat pump system comprises an evaporator that evaporates an adsorbate; a first adsorption device that adsorbs the adsorbate of the evaporator and generates cooling in the evaporator; and a second adsorption device that adsorbs the adsorbate that was adsorbed by the first adsorption device and generates cooling in the first adsorption device.

Abstract: An image in content data to be sent out from an information processing apparatus to an HMD is configured such that images obtained by performing correction for left and right parallax images taking distortion of an image by a lens provided in the HMD into consideration are juxtaposed side by side. Further, graphics are displayed in regions of the image, which are invisible when the image is viewed through the lens, and a notification matter from the information processing apparatus is embedded into the graphics depending upon the color, pattern, and shape. The HMD specifies the notification matter corresponding to the graphics and changes the later output mode.

Abstract: A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.

Abstract: An adsorption heat pump system includes a first adsorption device that adsorbs an adsorbate, and that regenerates on heating to a regeneration temperature or above; a second adsorption device that adsorbs an adsorbate, and that regenerates on heating to a regeneration temperature or above; and a vapor supply member that evaporates the adsorbate and supplies adsorbate vapor to the first adsorption device and the second adsorption device at different respective pressures.

Abstract: A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.

Abstract: An image 190 in content data to be sent out from an information processing apparatus to an HMD is configured such that images obtained by performing correction for left and right parallax images taking distortion of an image by a lens provided in the HMD into consideration are juxtaposed side by side. Further, graphics are displayed in regions of the image, which are invisible when the image is viewed through the lens, and a notification matter from the information processing apparatus is embedded into the graphics depending upon the color, pattern, and shape. The HMD specifies the notification matter corresponding to the graphics and changes the later output mode.

Abstract: A heat pump including an evaporator and an adsorber is provided. The adsorber is regenerated by applying heat from a chemical thermal storage reactor, a heat accumulator or an external heat source, at a temperature higher than or equal to a temperature to regenerate the adsorber.

Abstract: A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.

Abstract: A gas storage/supply system includes a gas storage material capable of reversibly absorbing and desorbing a gas, a gas storage tank having the gas storage material sealed therein, a chemical heat storage material capable of making a forward reaction and a reverse reaction with an operation medium, a chemical heat storage tank having the chemical heat storage material sealed therein, a heat exchange mechanism for transferring heat between the gas storage tank and the chemical heat storage tank, and a control mechanism for controlling the gas storage/supply system such that gas absorption heat released upon absorption of the gas to the gas storage material is stored in the chemical heat storage tank and gas desorption heat which is necessary for desorption of the gas from the gas storage material is supplied from the chemical heat storage tank.

Abstract: A material suitable for a semiconductor included in a transistor, a diode, or the like is provided. The material is an oxide material including In, M1, M2 and Zn, in which M1 is an element in the group 13 of the periodic table, a typical example thereof is Ga, and M2 is an element whose content is less than the content of M1. Examples of M2 are Ti, Zr, Hf, Ge, Sn, and the like. To contain M2 leads to suppression of generation of oxygen vacancies in the oxide material. A transistor which includes as few oxygen vacancies as possible can be achieved, whereby reliability of a semiconductor device can be increased.