Abstract: A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.

Abstract: A structure for effectively heating a battery. A battery is housed in a battery container. A condenser is formed such that a heating medium is in direct contact with a surface of the battery container, and condenses the heating medium to heat the battery via the battery container. The heating medium condensed by the condenser is supplied to an evaporator that heats and vaporizes the heating medium. The heating medium vaporized by the evaporator which is in vapor is circulated to the condenser.

Abstract: A method for manufacturing an SOI substrate in which crystal defects of a single crystal semiconductor layer are reduced even if a single crystal semiconductor substrate including crystal defects is used. A first oxide film is formed on a single crystal semiconductor substrate; the first oxide film is removed; a surface of the single crystal semiconductor substrate from which the first oxide film is removed is irradiated with laser light; a second oxide film is formed on the single crystal semiconductor substrate; an embrittled region is formed in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with ions through the second oxide film; bonding the second oxide film and the semiconductor substrate so as to face each other; and the single crystal semiconductor substrate is separated at the embrittled region by heat treatment to obtain a single crystal semiconductor layer bonded to the semiconductor substrate.

Abstract: A hydrogen storage heat pump, including: a hydrogen storage unit in which hydrogen gas is stored in a compressed state; a hydrogen flow tube through which the hydrogen gas, which is supplied from the hydrogen storage unit, flows; plural hydrogen absorbing materials that are provided at the hydrogen flow tube, that each have a different absorption pressure at which hydrogen is absorbed, and that are arranged in an order such that the absorption pressure decreases in a hydrogen gas flow direction from the hydrogen storage unit; and a switching valve that is disposed between the hydrogen absorbing materials in the hydrogen flow tube and that switches a flow rate of the hydrogen gas.

Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

Abstract: To suppress a decrease in on-state current in a semiconductor device including an oxide semiconductor. A semiconductor device includes an insulating film containing silicon, an oxide semiconductor film over the insulating film, a gate insulating film containing silicon over the oxide semiconductor film, a gate electrode which is over the gate insulating film and overlaps with at least the oxide semiconductor film, and a source electrode and a drain electrode which are electrically connected to the oxide semiconductor film. In the semiconductor device, the oxide semiconductor film which overlaps with at least the gate electrode includes a region in which a concentration of silicon distributed from an interface with the insulating film is lower than or equal to 1.1 at. %. In addition, a concentration of silicon contained in a remaining portion of the oxide semiconductor film except the region is lower than the concentration of silicon contained in the region.

Abstract: A switching device sequentially switches from having an evaporator-condenser generate an adsorbate and an adsorbent adsorb the adsorbate, to having an evaporator-condenser condense the adsorbate and an adsorbent desorb the adsorbate, such that the evaporator-condenser that generates the adsorbate and the adsorbent that adsorbs the adsorbate face each other, and the evaporator-condenser that condenses the adsorbate and the adsorbent that desorbs the adsorbate face each other. Accordingly, one adsorbent repeatedly desorbs and adsorbs in alternation, and another adsorbent repeatedly adsorbs and desorbs in alternation.

Abstract: A heat exchange reactor includes: a first flow path through which a heat exchange fluid flows; a second flow path through which a working fluid flows; and an adsorbent shaped body that is disposed in the second flow path, the adsorbent shaped body having a heat transfer face at which heat is exchanged with the heat exchange fluid flowing in the first flow path, and plural recessed portions arrayed in two dimensions at predetermined spacings along a direction in which the working fluid flows such that the working fluid flows into the plurality of recessed portions, the adsorbent shaped body including an adsorbent and a fibrous thermally conductive material, the adsorbent releasing heat when the working fluid is adsorbed and accumulating heat when the working fluid is desorbed, and the fibrous thermally conductive material being disposed such that an axial direction thereof is oriented in a direction that intersects with the heat transfer face.

Abstract: The concentration of impurity elements included in an oxide semiconductor film in the vicinity of a gate insulating film is reduced. Further, crystallinity of the oxide semiconductor film in the vicinity of the gate insulating film is improved. A semiconductor device includes an oxide semiconductor film over a substrate, a source electrode and a drain electrode over the oxide semiconductor film, a gate insulating film which includes an oxide containing silicon and is formed over the oxide semiconductor film, and a gate electrode over the gate insulating film. The oxide semiconductor film includes a region in which the concentration of silicon is lower than or equal to 1.0 at. %, and at least the region includes a crystal portion.

Abstract: An adsorption heat pump includes: an evaporator/condenser including a section that evaporates a first heat exchange-medium and pipe through which a second heat exchange-medium flows; first adsorption devices, each including an adsorption-section in which the first heat exchange-medium that has been evaporated reacts and retains the first heat exchange-medium, and pipe through which the second heat exchange-medium flows; and second adsorption device in which first heat exchange-medium that has been released from the first adsorption devices reacts and retains the first heat exchange-medium.

Abstract: An adsorption heat pump includes: a first evaporator that evaporates a first fluid; a condenser that condenses the first fluid; a heater; and a rotary adsorption device. The rotary adsorption device includes: partitioning portions that radially partition a space encircling the rotation axis into plural regions, that each include a flow path for internally retaining and discharging a second fluid, and that each include an adsorbent on an outer surface thereof or on a wall surface of the flow path; and a pair of closure portions that close off both ends, in the direction of the rotation axis, of the plural regions. Each of the partitioning portions is moved alternately between the first evaporator side and the condenser side by rotation around the rotation axis. In the partitioning portions, retention and discharge of the first fluid, and discharge and retention of the second fluid, are repeated.

Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

Abstract: When temperature of lubricating oil is raised at a time of low-temperature, of an outer peripheral side of a radial plain bearing in a bearing retaining unit, heat is not supplied from a heating medium in a thermal medium flow path on the outer peripheral side of a halved bearing metal in a bearing retaining unit body, which has a large thermal capacity, and instead, heat is supplied from the heating medium in the thermal medium flow path on the outer peripheral side of a halved bearing metal in the cap, which has a small thermal capacity.

Abstract: An object is to provide an oxide semiconductor layer having a novel structure which is preferably used for a semiconductor device. Alternatively, another object is to provide a semiconductor device using an oxide semiconductor layer having the novel structure. An oxide semiconductor layer includes an amorphous region which is mainly amorphous and a crystal region containing crystal grains of In2Ga2ZnO7 in a vicinity of a surface, in which the crystal grains are oriented so that the c-axis is almost vertical with respect to the surface. Alternatively, a semiconductor device uses such an oxide semiconductor layer.

Abstract: A decrease in on-state current in a semiconductor device including an oxide semiconductor film is suppressed. A transistor including an oxide semiconductor film, an insulating film which includes oxygen and silicon, a gate electrode adjacent to the oxide semiconductor film, the oxide semiconductor film provided to be in contact with the insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the interface with the insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region.

Abstract: An adsorption heat pump system comprises an evaporator that evaporates an adsorbate; a first adsorption device that adsorbs the adsorbate of the evaporator and generates cooling in the evaporator; and a second adsorption device that adsorbs the adsorbate that was adsorbed by the first adsorption device and generates cooling in the first adsorption device.

Abstract: A decrease in on-state current in a semiconductor device including an oxide semiconductor film is suppressed. A transistor including an oxide semiconductor film, an insulating film which includes oxygen and silicon, a gate electrode adjacent to the oxide semiconductor film, the oxide semiconductor film provided to be in contact with the insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the interface with the insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region.

Abstract: A hydrogen storage heat pump, including: a hydrogen storage unit in which hydrogen gas is stored in a compressed state; a hydrogen flow tube through which the hydrogen gas, which is supplied from the hydrogen storage unit, flows; plural hydrogen absorbing materials that are provided at the hydrogen flow tube, that each have a different absorption pressure at which hydrogen is absorbed, and that are arranged in an order such that the absorption pressure decreases in a hydrogen gas flow direction from the hydrogen storage unit; and a switching valve that is disposed between the hydrogen absorbing materials in the hydrogen flow tube and that switches a flow rate of the hydrogen gas.

Abstract: A gas storage/supply system includes a gas storage material capable of reversibly absorbing and desorbing a gas, a gas storage tank having the gas storage material sealed therein, a chemical heat storage material capable of making a forward reaction and a reverse reaction with an operation medium, a chemical heat storage tank having the chemical heat storage material sealed therein, a heat exchange mechanism for transferring heat between the gas storage tank and the chemical heat storage tank, and a control mechanism for controlling the gas storage/supply system such that gas absorption heat released upon absorption of the gas to the gas storage material is stored in the chemical heat storage tank and gas desorption heat which is necessary for desorption of the gas from the gas storage material is supplied from the chemical heat storage tank.

Abstract: The concentration of impurity elements included in an oxide semiconductor film in the vicinity of a gate insulating film is reduced. Further, crystallinity of the oxide semiconductor film in the vicinity of the gate insulating film is improved. A semiconductor device includes an oxide semiconductor film over a substrate, a source electrode and a drain electrode over the oxide semiconductor film, a gate insulating film which includes an oxide containing silicon and is formed over the oxide semiconductor film, and a gate electrode over the gate insulating film. The oxide semiconductor film includes a region in which the concentration of silicon is lower than or equal to 1.0 at. %, and at least the region includes a crystal portion.