Abstract: An adsorption heat pump system includes a first adsorption device that adsorbs an adsorbate, and that regenerates on heating to a regeneration temperature or above; a second adsorption device that adsorbs an adsorbate, and that regenerates on heating to a regeneration temperature or above; and a vapor supply member that evaporates the adsorbate and supplies adsorbate vapor to the first adsorption device and the second adsorption device at different respective pressures.

Abstract: A thermal storage device includes a reactor for generating heat by chemically reacting with ammonia; an absorber, provided with an absorbent, for storing ammonia absorbed by the absorbent; and a connection line for connecting the reactor and absorber to each other and moving ammonia between the reactor and absorber. The reactor has a thermal storage member provided so as to cover an outer peripheral portion of the catalyst, a porous sheet provided so as to cover an outer peripheral portion of the thermal storage member, and a casing for enclosing the thermal storage member and porous sheet. One end of the connection line penetrates the casing and opens to the porous sheet.

Abstract: Disclosed is a chemical thermal energy storage material structure, including a granular chemical thermal energy storage material, a clay mineral having a layered ribbon structure, and a complex metal silicate that is generated by a reaction between the above-mentioned chemical thermal energy storage material and the above-mentioned clay mineral and that includes at least one type of alkaline earth metal.

Abstract: To suppress a decrease in on-state current in a semiconductor device including an oxide semiconductor. A semiconductor device includes an insulating film containing silicon, an oxide semiconductor film over the insulating film, a gate insulating film containing silicon over the oxide semiconductor film, a gate electrode which is over the gate insulating film and overlaps with at least the oxide semiconductor film, and a source electrode and a drain electrode which are electrically connected to the oxide semiconductor film. In the semiconductor device, the oxide semiconductor film which overlaps with at least the gate electrode includes a region in which a concentration of silicon distributed from an interface with the insulating film is lower than or equal to 1.1 at. %. In addition, a concentration of silicon contained in a remaining portion of the oxide semiconductor film except the region is lower than the concentration of silicon contained in the region.

Abstract: When temperature of lubricating oil is raised at a time of low-temperature, of an outer peripheral side of a radial plain bearing in a bearing retaining unit, heat is not supplied from a heating medium in a thermal medium flow path on the outer peripheral side of a halved bearing metal in a bearing retaining unit body, which has a large thermal capacity, and instead, heat is supplied from the heating medium in the thermal medium flow path on the outer peripheral side of a halved bearing metal in the cap, which has a small thermal capacity.

Abstract: A semiconductor device includes a base insulating film including silicon, an oxide semiconductor film over the base insulating film, a gate insulating film over the oxide semiconductor film, a gate electrode which is in contact with the gate insulating film and overlaps with at least the oxide semiconductor film, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. The oxide semiconductor film includes a region in which a concentration of silicon distributed from the interface with the base insulating film toward an inside of the oxide semiconductor film is lower than or equal to 1.0 at. %. A crystal portion is included at least in the region.

Abstract: A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.

Abstract: The concentration of impurity elements included in an oxide semiconductor film in the vicinity of a gate insulating film is reduced. Further, crystallinity of the oxide semiconductor film in the vicinity of the gate insulating film is improved. A semiconductor device includes an oxide semiconductor film over a substrate, a source electrode and a drain electrode over the oxide semiconductor film, a gate insulating film which includes an oxide containing silicon and is formed over the oxide semiconductor film, and a gate electrode over the gate insulating film. The oxide semiconductor film includes a region in which the concentration of silicon is lower than or equal to 1.0 at. %, and at least the region includes a crystal portion.

Abstract: A catalytic reactor includes a catalytic reaction section, which has a purification catalyst for gas purification, and a warming-up section, which is located at a position capable of heat-exchanging with the purification catalyst and has a chemical heat storage material that generates heat when ammonia is fixed and absorbs heat when ammonia is desorbed. The catalytic reactor is further includes an ammonia supply section, which has an adsorbent capable of adsorbing ammonia and transfers ammonia to and from the warming-up section through the adsorption and desorption of the ammonia, and an ammonia depressurization section, which has an ammonia fixation section for fixing ammonia and reduces the partial ammonia pressure of at least the interior of the warming-up section after ammonia is desorbed from the chemical heat-storage material.

Abstract: A heat exchanger heat-utilization device is obtained that can efficiently store heat and dissipate heat in or from a chemical thermal storage medium, and a manufacturing method of the heat exchanger heat-utilization device. A heat exchanger heat-utilization device includes: chemical thermal storage medium composite molded formed by organizing chemical thermal storage medium particles into a porous structural body having flow channels; and a heat exchanger body. The heat exchanger body has thermal storage medium containing portions in which the chemical thermal storage medium composite molded bodies are accommodated, and fluid flow channels that are partitioned from the thermal storage medium containing portions by partition walls and through which a heat exchange medium flows for heat exchange with the chemical thermal storage medium composite molded bodies.

Abstract: A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.

Abstract: When temperature of lubricating oil is raised at a time of low-temperature, of an outer peripheral side of a radial plain bearing in a bearing retaining unit, heat is not supplied from a heating medium in a thermal medium flow path on the outer peripheral side of a halved bearing metal in a bearing retaining unit body, which has a large thermal capacity, and instead, heat is supplied from the heating medium in the thermal medium flow path on the outer peripheral side of a halved bearing metal in the cap, which has a small thermal capacity.

Abstract: An object is to provide a semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. An oxide semiconductor layer including SiOx is used in a channel formation region, and in order to reduce contact resistance with source and drain electrode layers formed using a metal material with low electric resistance, source and drain regions are provided between the source and drain electrode layers and the oxide semiconductor layer including SiOx. The source and drain regions are formed using an oxide semiconductor layer which does not include SiOx or an oxynitiride film.

Abstract: A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A single-component oxide semiconductor layer is formed over a substrate; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a single-component oxide semiconductor layer including single crystal regions is formed; and a multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.

Abstract: A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.

Abstract: A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.

Abstract: A chemical heat accumulator includes a receptacle, a first reaction vessel, and a second reaction vessel. The first reaction vessel is hermetically connected to the receptacle and supplied with water from the receptacle. The first reaction vessel contains a chemical compound that causes a hydration reaction with the water from the receptacle to generate water vapor by a heat of reaction, and causes a dehydration reaction by receiving heat. The second reaction vessel is hermetically connected to the first reaction vessel and supplied with the water vapor from the first reaction vessel. The second reaction vessel contains a chemical heat storage material that generates heat by causing a hydration reaction with the water vapor from the first reaction vessel and stores heat through a dehydration reaction caused by receiving heat. The chemical heat storage material is thermally in contact with an object to be heated.

Abstract: To suppress a decrease in on-state current in a semiconductor device including an oxide semiconductor. A semiconductor device includes an insulating film containing silicon, an oxide semiconductor film over the insulating film, a gate insulating film containing silicon over the oxide semiconductor film, a gate electrode which is over the gate insulating film and overlaps with at least the oxide semiconductor film, and a source electrode and a drain electrode which are electrically connected to the oxide semiconductor film. In the semiconductor device, the oxide semiconductor film which overlaps with at least the gate electrode includes a region in which a concentration of silicon distributed from an interface with the insulating film is lower than or equal to 1.1 at. %. In addition, a concentration of silicon contained in a remaining portion of the oxide semiconductor film except the region is lower than the concentration of silicon contained in the region.

Abstract: A secondary battery system comprises a secondary battery which receives regenerative electric power from a motor, a heat storage unit (heat storage device) which converts a part of electric power stored in the secondary battery or the regenerative electric power from the motor into heat and stores the heat, and which supplies the stored heat to the secondary battery when a temperature of the secondary battery is less than a low-temperature-side threshold value which is set in advance when the electric power is extracted from the secondary battery, and an electric power distribution controller (ECU) which distributes the regenerative electric power from the motor to the secondary battery and the heat storage unit (heat storage device) when the temperature of the secondary battery is less than the low-temperature-side threshold value when the secondary battery receives the regenerative electric power from the motor.

Abstract: A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.