Abstract: A method of forming a penetration electrode in which an electroconductive substance is inserted into a micropore that has one end blocked off only by wiring and a pad formed by an electroconductive substance without the wiring and pad being broken. In this method of forming a penetration electrode, an electroconductive substance is inserted into the micropore that penetrates a substrate and that has one aperture blocked off by an electroconductive thin film. After a protective member that holds the electroconductive thin film is provided on a surface on the electroconductive thin film side of the substrate, an electroconductive substance is inserted from the other aperture of the micropore.

Abstract: A blind hole (3) is formed on a substrate (1) from a first side of the substrate toward a second side of the substrate (1). A conductor (11) is filled in the blind hole (3). The substrate (1) is removed from the opposite side to expose the conductor (13) filled in the blind hole (3).

Abstract: A blind hole (3) is formed on a substrate (1) from a first side of the substrate toward a second side of the substrate (1). A conductor (11) is filled in the blind hole (3). The substrate (1) is removed from the opposite side to expose the conductor (13) filled in the blind hole (3).

Abstract: A method of forming a penetration electrode in which an electroconductive substance is inserted into a micropore that has one end blocked off only by wiring and a pad formed by an electroconductive substance without the wiring and pad being broken. In this method of forming a penetration electrode, an electroconductive substance is inserted into the micropore that penetrates a substrate and that has one aperture blocked off by an electroconductive thin film. After a protective member that holds the electroconductive thin film is provided on a surface on the electroconductive thin film side of the substrate, an electroconductive substance is inserted from the other aperture of the micropore.

Abstract: A method of forming a penetration electrode in which an electroconductive substance is inserted into a micropore that has one end blocked off only by wiring and a pad formed by an electroconductive substance without the wiring and pad being broken. In this method of forming a penetration electrode, an electroconductive substance is inserted into the micropore that penetrates a substrate and that has one aperture blocked off by an electroconductive thin film. After a protective member that holds the electroconductive thin film is provided on a surface on the electroconductive thin film side of the substrate, an electroconductive substance is inserted from the other aperture of the micropore.

Abstract: The semiconductor pressure sensor includes a substrate (20). The sensor includes a diaphragm (26) implemented in the substrate (26) and being displaceable by a pressure medium acting on a side of the substrate (26). The sensor includes sensor circuitry (22, 23) implemented on the opposite side of the substrate in coincidence with the diaphragm (26) for detecting displacement of the diaphragm (26) for pressure.

Abstract: A manufacturing method of a semiconductor substrate provided with a through hole electrode is proposed. In accordance with the methods, it is possible to effectively form a through hole electrode in a semiconductor substrate in which a device and a wiring pattern have been already fabricated. This manufacturing method includes the steps of forming a first silicon oxide film 12 on a principal surface of the semiconductor substrate 11, forming a small hole 13 through the semiconductor substrate 11 from the opposite the step to reach to the first silicon oxide film 12, covering the inside of the small hole 13 with the second silicon oxide film 14, forming a first thin metal film 15 and a second thin metal film 16 on the first silicon oxide film 12, partially removing the first silicon oxide film 12 corresponding to the end of the small hole 13, and filling the small hole 13 with the conductive material to form a through hole electrode 17.

Abstract: A grease composition for use in ball type constant velocity joints, which comprises the following components a base oil; a diurea thickener of the formula: R1—NH—CO—NH—C6H4-p-CH2—C6H4-p-NH—CO—NHR2 wherein R1 and R2 are alkyl groups having 8 carbon atoms, molybdenum disulfide; molybdenum dithiocarbamate of the formula: (R3R4N—CS—S)2—Mo2OmSn wherein R3 and R4 independently represent an alkyl group having 1 to 24 carbon atoms, m is 0 to 3, n is 4 to 1 and m+n=4, calcium salts or overbasic calcium salts of petroleum sulfonates, sulfur-phosphorus extreme pressure agent, and castor oil. The grease composition exhibits excellent wear-resistance and pitting-inhibitory effect.

Abstract: A sun gear 6 is concentrically, rotatably disposed inside an internal gear 4. Plural planet gears 8, carried by a planetary carrier 10, are disposed between and in meshing engagement with the internal gear 4 and the sun gear 6. The planetary carrier 10 is connected to a shaft extending from an engine while the internal gear 4 and the sun gear 6 are connected to output shafts. The internal gear 4 is molded by a plastic working, followed by a thermal treatment including soft-nitriding, a nitriding and a carburizing hardening step. The inner surface of the internal gear 4 is formed with internal gear teeth 4b, except for an axial portion 4d, while a spline groove 4a is formed on the outer surface of the internal gear 4 at a location corresponding to the portion 4d where no internal teeth 4b are formed for engagement with a spline 2a on a housing 2. The internal gear 4 is reduced in size while improving the mechanical strength thereof.

Abstract: In the formation of through wirings in a silicon substrate and so forth, there was a need for the development of a technology that would allow metal to be reliably filled particularly in the vicinity of openings of through holes and other fine holes. This invention provides a metal filling method and member with filled metal sections in which, in the inflow and filling of a plating solution into through holes 11 of a substrate 10 by immersing said substrate 10 in heated and melted conductive metal, filled metal sections are formed by preliminarily forming a metal layer 15 on the inner surface of one of the ends of through holes 11 of this substrate 10 as well as on substrate top surface 13 around those openings, removing substrate 10 on which inflow and filling of the plating solution into through holes 11 has been completed from the plating solution, and then cooling to solidify the plating solution that has been filled into the through holes.

Abstract: A method of forming a penetration electrode in which an electroconductive substance is inserted into a micropore that has one end blocked off only by wiring and a pad formed by an electroconductive substance without the wiring and pad being broken. In this method of forming a penetration electrode, an electroconductive substance is inserted into the micropore that penetrates a substrate and that has one aperture blocked off by an electroconductive thin film. After a protective member that holds the electroconductive thin film is provided on a surface on the electroconductive thin film side of the substrate, an electroconductive substance is inserted from the other aperture of the micropore.

Abstract: The semiconductor pressure sensor includes a substrate (20). The sensor includes a diaphragm (26) implemented in the substrate (26) and being displaceable by a pressure medium acting on a side of the substrate (26). The sensor includes sensor circuitry (22, 23) implemented on the opposite side of the substrate in coincidence with the diaphragm (26) for detecting displacement of the diaphragm (26) for pressure.

Abstract: In the formation of through wirings in a silicon substrate and so forth, there was a need for the development of a technology that would allow metal to be reliably filled particularly in the vicinity of openings of through holes and other fine holes. This invention provides a metal filling method and member with filled metal sections in which, in the inflow and filling of a plating solution into through holes 11 of a substrate 10 by immersing said substrate 10 in heated and melted conductive metal, filled metal sections are formed by preliminarily forming a metal layer 15 on the inner surface of one of the ends of through holes 11 of this substrate 10 as well as on substrate top surface 13 around those openings, removing substrate 10 on which inflow and filling of the plating solution into through holes 11 has been completed from the plating solution, and then cooling to solidify the plating solution that has been filled into the through holes.

Abstract: A blind hole (3) is formed on a substrate (1) from a first side of the substrate toward a second side of the substrate (1). A conductor (11) is filled in the blind hole (3). The substrate (1) is removed from the opposite side to expose the conductor (13) filled in the blind hole (3).

Abstract: A manufacturing method of a semiconductor substrate provided with a through hole electrode is proposed. In accordance with the methods, it is possible to effectively form a through hole electrode in a semiconductor substrate in which a device and a wiring pattern have been already fabricated. This manufacturing method includes the steps of forming a first silicon oxide film 12 on a principal surface of the semiconductor substrate 11, forming a small hole 13 through the semiconductor substrate 11 from the opposite the step to reach to the first silicon oxide film 12, covering the inside of the small hole 13 with the second silicon oxide film 14, forming a first thin metal film 15 and a second thin metal film 16 on the first silicon oxide film 12, partially removing the first silicon oxide film 12 corresponding to the end of the small hole 13, and filling the small hole 13 with the conductive material to form a through hole electrode 17.

Abstract: A sun gear 6 is rotatably disposed inside an internal gear 4 on a concentric circle therewith. A plurality of planet gears 8 which are carried by a planetary carrier 10 are disposed between the internal gear 4 and the sun gear 6 and are in meshing engagement with the internal gear 4 and the sun gear 6. The planetary carrier 10 which carries the planet gears 8 is connected to a shaft extending from an engine while the internal gear 4 and the sun gear 6 are connected to output shafts. The internal gear 4 is molded by a plastic working, followed by a thermal treatment including a soft-nitriding, a nitriding and a carburizing hardening step. The inner surface of the internal gear 4 is formed with internal gear teeth 4b except for an axial portion 4d while a spline groove 4a is formed on the outer surface of the internal gear 4 at a location corresponding to the portion 4d where no internal teeth 4b are formed for engagement with a spline 2a on a housing 2.

Abstract: In the formation of through wirings in a silicon substrate and so forth, there was a need for the development of a technology that would allow metal to be reliably filled particularly in the vicinity of openings of through holes and other fine holes. This invention provides a metal filling method and member with filled metal sections in which, in the inflow and filling of a plating solution into through holes 11 of a substrate 10 by immersing said substrate 10 in heated and melted conductive metal, filled metal sections are formed by preliminarily forming a metal layer 15 on the inner surface of one of the ends of through holes 11 of this substrate 10 as well as on substrate top surface 13 around those openings, removing substrate 10 on which inflow and filling of the plating solution into through holes 11 has been completed from the plating solution, and then cooling to solidify the plating solution that has been filled into the through holes.

Abstract: A current-limiting resistor is connected between a power-supply line and a heater provided near the oxygen-detecting element of limiting-current type oxygen sensor. A power MOSFET is connected between the heater and a ground line. The resistor and the heater have such resistances that a current I2 flowing through the resistor and the heater when the heater has a resistance R2 is about I1{square root over ((R1/R2))}, where I1 is a current flowing through the resistor and the heater when the heater has a resistance R1.